Renesas R1EV5801MBTDRDI#B0

Overview

R1EV5801MBTDRDI#B0 from Renesas Electronics is a 1 Mbit (131,072 × 8-bit) parallel EEPROM featuring MONOS memory technology, 150 ns/250 ns access time across 2.7–5.5 V supply, and integrated RDY/Busy and RES pins for real-time write status monitoring and hardware reset-based data protection. It supports automatic byte and 128-byte page programming with ≤10 ms write cycle time and is qualified for industrial temperature operation (−40°C to +85°C).

For engineers reviewing the R1EV5801MBTDRDI#B0 datasheet, R1EV5801MBTDRDI#B0 pinout, R1EV5801MBTDRDI#B0 application, or R1EV5801MBTDRDI#B0 equivalent, this device serves as a drop-in replacement for legacy parallel EEPROMs in embedded control, industrial HMI, and legacy bus-based firmware storage where deterministic timing, software/hardware write protection, and long-term data retention (>10 years) are required.

Technical Context

The R1EV5801MBTDRDI#B0 implements a parallel interface with full address/data bus separation (A0–A16, I/O0–I/O7), uses on-chip latches for address, data, CE, OE, and WE, and integrates a high-voltage generator and control logic for autonomous byte/page programming. Its MONOS cell architecture enables 10⁴ erase/write cycles and eliminates need for external high-voltage programming supplies.

Timing behavior is defined by dual AC specifications: 150 ns max access at VCC = 4.5–5.5 V and 250 ns max at VCC = 2.7–5.5 V. Write completion is signaled via either RDY/Busy pin assertion (low-active open-drain) or data polling on I/O7, while RES pin forces unprogrammable state during power transitions to prevent spurious writes.

Key Specifications

Pinout & Package

Package: 32-pin plastic TSOP (JEITA code TFP-32DAV; Renesas code PTSA0032KD-A; dimensions 8.0 × 12.4 mm, 0.5 mm pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel EEPROM applications.

Compared with AT28C256-15PU and FM24CL64B-G, the R1EV5801MBTDRDI#B0 uniquely delivers 1 Mbit parallel EEPROM functionality with industrial temperature support, hardware RES-based write lock, RDY/Busy signaling, and 128-byte page programming - enabling robust, drop-in upgrades for legacy 5 V and mixed-voltage industrial systems without redesigning timing or protection logic.

Availability

R1EV5801MBTDRDI#B0 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical device configuration storage, and legacy HMI firmware requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for R1EV5801MBTDRDI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1EV5801MB Series was designed specifically for industrial and automotive applications requiring high-reliability, long-retention parallel EEPROMs with hardware-assisted write protection and deterministic timing - replacing aging NMOS/CMOS EEPROMs in mission-critical embedded systems.

FAQ

What is the maximum operating frequency supported by the R1EV5801MBTDRDI#B0 parallel interface?

The R1EV5801MBTDRDI#B0 does not operate at a clock frequency but responds to asynchronous control signals (CE, OE, WE). Its 150 ns access time at 4.5–5.5 V supports microcontroller bus frequencies up to ~6.7 MHz (1/150 ns) without wait states. At 2.7–5.5 V, the 250 ns limit aligns with ~4 MHz bus timing. The R1EV5801MBTDRDI#B0 requires no external clock and functions as a true parallel memory-mapped device.

Does the R1EV5801MBTDRDI#B0 support both byte and page write operations, and what are their timing requirements?

Yes, the R1EV5801MBTDRDI#B0 supports automatic byte write (≤10 ms) and 128-byte page write (≤10 ms). Page writes require consecutive addresses and data loading within 30 µs of each preceding WE/CE falling edge. The R1EV5801MBTDRDI#B0 internally manages address incrementing and final commit, eliminating software overhead for multi-byte updates.

How does the RES pin function on the R1EV5801MBTDRDI#B0, and what is its recommended usage during power sequencing?

The RES pin on the R1EV5801MBTDRDI#B0 is an active-low hardware lock that disables all read and write operations when asserted. During power-on/off, RES must be held low until VCC stabilizes, then driven high for ≥10 ms before initiating writes. This prevents spurious writes caused by noise on CE/OE/WE during supply transients. The R1EV5801MBTDRDI#B0 datasheet recommends tying RES to the host CPU's reset signal for automatic coordination.

What write protection mechanisms are implemented in the R1EV5801MBTDRDI#B0, and how do they interact?

The R1EV5801MBTDRDI#B0 implements three layered protections: (1) hardware RES pin lock, (2) software data protection (SDP) requiring a 3-byte unlock sequence, and (3) noise filtering on control pins (<20 ns pulse rejection). RES takes precedence - if low, SDP is irrelevant. SDP remains disabled at shipment and must be explicitly enabled. All three mechanisms operate independently to prevent accidental writes in the R1EV5801MBTDRDI#B0.

Is the R1EV5801MBTDRDI#B0 pin-compatible with standard 32-pin TSOP parallel EEPROMs, and what package details confirm this?

Yes, the R1EV5801MBTDRDI#B0 uses the industry-standard 32-pin TSOP-I package (JEITA code TFP-32DAV, Renesas code PTSA0032KD-A) with 8.0 × 12.4 mm body and 0.5 mm lead pitch. Pin numbering and signal assignment (A0–A16, I/O0–I/O7, CE/OE/WE, VCC/VSS, RDY/Busy, RES) match JEDEC MO-153 and common 1 Mbit parallel EEPROM footprints, enabling direct replacement without PCB modification.