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Renesas R1EV58064BDANBI#B2
- Part No.:
- R1EV58064BDANBI#B2
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-DIP (0.600", 15.24mm)
- Datasheet:
-
R1EV58064BDANBI#B2.pdf
- Description:
- IC EEPROM 64KBIT PARALLEL 28DIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,497
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Product details
Overview
R1EV58064BDANBI#B2 from Renesas Electronics is a 64 Kbit (8-Kword × 8-bit) parallel EEPROM organized as 8192 × 8, featuring 100 ns max access time at 2.7–4.5 V, Ready/Busy status signaling, and MONOS-based nonvolatile storage for industrial temperature operation (−40 to +85°C). It serves as a byte- and page-programmable configuration memory in microcontroller-based systems requiring reliable data retention over 10 years and ≥10⁵ write/erase cycles.
For engineers reviewing the R1EV58064BDANBI#B2 datasheet, R1EV58064BDANBI#B2 pinout, R1EV58064BDANBI#B2 application, or R1EV58064BDANBI#B2 equivalent, key selection criteria include its 28-pin DIP package, 2.7–5.5 V single-supply operation, software/hardware data protection, and compatibility with JEDEC byte-wide parallel bus interfaces in embedded control and instrumentation designs.
Technical Context
This device implements a parallel interface with dedicated CE, OE, and WE control lines, supporting both byte-write (≤10 ms) and 64-byte page-write (≤10 ms) operations. Its internal architecture includes on-chip address/data latches, high-voltage generation for programming, and a voltage detector for power-on/off data protection.
The R1EV58064BDANBI#B2 belongs to the R1EV58064BxxN series - meaning it lacks the RES (Reset) pin function found only in R-series variants. Its RDY/Busy output provides hardware flow control during internal write cycles, while data polling via I/O7 and toggle-bit detection on I/O6 enable software-based write completion monitoring.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8,192 × 8-bit), sufficient for firmware parameter storage or calibration tables in resource-constrained controllers |
| Access time | 100 ns max at 2.7–4.5 V; enables direct interfacing with legacy 8-bit microcontrollers running at ≤10 MHz without wait states |
| Supply voltage | 2.7–5.5 V single supply; supports mixed-voltage system integration with 3.3 V or 5 V logic domains |
| Data retention | ≥10 years at −40 to +85°C; suitable for unattended industrial equipment requiring long-term configuration persistence |
| Endurance | ≥100,000 write/erase cycles; accommodates frequent recalibration or logging in test and measurement applications |
| Package | 28-pin plastic DIP (600 mil), compatible with through-hole prototyping and legacy PCB layouts |
| Operating temp | −40°C to +85°C industrial grade; validated for use in factory automation, HVAC controls, and power metering |
Pinout & Package
Package: 28-pin plastic DIP (PRDP0028AB-A / DP-28V), 13.4 mm × 35.6 mm body, 2.54 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC (Pin 1) | Power supply input | Accepts 2.7–5.5 V; requires local 100 nF decoupling capacitor near pin for stable read/write operation |
| WE (Pin 2) | Write enable input | Active-low control for initiating byte/page writes; falling edge latches address, rising edge latches data |
| NC (Pin 3) | No connection | Internally unconnected; must be left floating or tied to ground/VCC per board layout best practices |
| A8–A12 (Pins 4–6, 16) | Address inputs | Upper address bits for 13-bit addressing (A0–A12); A6–A12 serve as page address latch points during page write |
| OE (Pin 7) | Output enable input | Active-low control for enabling I/O bus drivers during read; high-Z state prevents bus contention |
| A10 (Pin 8) | Address input | Mid-range address bit; part of full 13-bit address space mapping 8,192 locations |
| CE (Pin 9) | Chip enable input | Primary device select; low enables all internal functions including read, write, and status polling |
| I/O7–I/O0 (Pins 10–13, 25–28) | Data I/O bidirectional bus | 8-bit parallel data path; supports read data output and write data input; I/O7 used for data polling, I/O6 for toggle-bit detection |
| RDY/Busy (Pin 14) | Status output | Open-drain active-low signal indicating internal write progress; pulled high externally to monitor write completion |
| A12–A0 (Pins 15–24, 26–28) | Address inputs | Full 13-bit address bus (A0–A12); A0–A5 are lower address bits directly mapped to byte location within page |
| VSS (Pin 28) | Ground reference | System ground return; requires low-impedance connection to minimize noise coupling during write cycles |
Key Features
| Feature | Design Value |
|---|---|
| MONOS memory technology | Enables >100K endurance and >10-year data retention without wear leveling circuitry |
| 64-byte page programming | Reduces average write time by ~64× vs. sequential byte writes, critical for rapid configuration updates |
| Ready/Busy hardware signaling | Eliminates need for continuous polling; allows host CPU to perform other tasks during 10 ms internal write |
| Software data protection | Prevents accidental writes via 3-byte unlock sequence (AAh→55h→A0h), eliminating external hardware lock pins |
| JEDEC byte-wide standard compliance | Ensures drop-in compatibility with existing 8-bit parallel EEPROM sockets and controller firmware |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Memory |
|---|---|
Use Scenario: Storing I/O mapping, scaling factors, and alarm thresholds in programmable logic controllers deployed in factory environments with wide temperature swings. IC Role / Device Role / Timing Role: Nonvolatile configuration register bank accessed via parallel bus during boot and runtime reconfiguration. Use Value: Guarantees parameter persistence across 100,000+ power cycles and 10+ years without battery backup or refresh logic. | Use Scenario: Retaining sensor calibration coefficients and usage logs in portable diagnostic instruments operating at −20°C to +50°C ambient. IC Role / Device Role / Timing Role: JEDEC-compliant EEPROM interfaced to an 8-bit MCU for deterministic read/write timing under ISO 13485 constraints. Use Value: 100 ns access enables real-time calibration lookup without interrupt latency penalties during signal acquisition. |
| Automotive Body Control Module NVM | Test Equipment Firmware Patch Storage |
Use Scenario: Holding seat position presets, mirror angles, and lighting profiles in automotive BCMs where ECU must retain settings after battery disconnect. IC Role / Device Role / Timing Role: Industrial-grade EEPROM with power-on/off data protection circuitry preventing corruption during ignition cycling. Use Value: Built-in voltage detector and noise immunity (<15 ns glitch rejection) ensure zero unintended writes during cranking transients. | Use Scenario: Storing field-upgradable firmware patches and instrument-specific compensation algorithms in benchtop oscilloscopes and spectrum analyzers. IC Role / Device Role / Timing Role: Parallel-boot EEPROM providing fast, deterministic code loading to SRAM before main application execution. Use Value: 64-byte page write capability reduces patch update time from seconds to sub-100 ms, improving service turnaround. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C64B-15PU | 150 ns access time; 5 V only (4.5–5.5 V); no Ready/Busy pin; 10K endurance rating | Lacks hardware status signaling and industrial temp range; suited for cost-sensitive 5 V-only legacy systems | Select when budget constraints outweigh need for fast access or extended temperature support |
| BR24G64FJ-3GE2 | I²C serial interface; 1 MHz clock; 1.7–5.5 V; 400 kHz min write cycle; no parallel bus | Requires different MCU peripheral (I²C vs. parallel port); occupies fewer PCB pins but adds protocol overhead | Select when board space is constrained and MCU has available I²C resources with sufficient timing margin |
Compared with AT28C64B-15PU and BR24G64FJ-3GE2, the R1EV58064BDANBI#B2 delivers faster 100 ns access, integrated RDY/Busy signaling for deterministic timing, and guaranteed 100K-cycle endurance - making it optimal for industrial control and instrumentation where reliability and speed are prioritized over pin count or lowest unit cost.
Availability
R1EV58064BDANBI#B2 is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, automotive body control modules, and test equipment requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for R1EV58064BDANBI#B2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1EV58064BxxN series was designed specifically for industrial-grade parallel EEPROM replacement in legacy 8-bit systems requiring high reliability, extended temperature operation, and JEDEC-compliant pinouts without redesigning PCB layouts.
FAQ
What is the maximum access time specification for R1EV58064BDANBI#B2?
The R1EV58064BDANBI#B2 has a maximum access time of 100 ns when VCC is between 2.7 V and 4.5 V, and 70 ns when VCC is between 4.5 V and 5.5 V. This timing is measured from address or chip-enable assertion to valid data output and ensures compatibility with 8-bit microcontrollers operating up to 10 MHz without wait-state insertion. The R1EV58064BDANBI#B2 meets this spec across its full −40°C to +85°C industrial temperature range.
Does R1EV58064BDANBI#B2 support hardware reset protection via a RES pin?
No, the R1EV58064BDANBI#B2 belongs to the R1EV58064BxxN series and does not include a RES (Reset) pin. That function is exclusive to the R1EV58064BxxR series variants. The R1EV58064BDANBI#B2 relies on software data protection (3-byte unlock sequence) and power-on/off noise immunity circuits for write inhibition, rather than hardware reset-based locking. This distinction is confirmed in the Pin Description table and Functional Description section of the R10DS0207EJ0200 datasheet.
How many bytes can be written in a single page-write cycle for R1EV58064BDANBI#B2?
The R1EV58064BDANBI#B2 supports 64-byte page writes, allowing up to 64 consecutive bytes to be loaded and internally programmed in a single operation with ≤10 ms total duration. Page addressing uses A6–A12 as upper bits, and each subsequent byte must be presented within 30 μs of the prior WE or CE falling edge. This capability significantly accelerates bulk configuration updates compared to individual byte writes, and is fully supported in the R1EV58064BDANBI#B2's N-series implementation.
What data protection mechanisms are implemented in R1EV58064BDANBI#B2?
The R1EV58064BDANBI#B2 implements three layers of data protection: (1) software data protection using a 3-byte unlock sequence (AAh→55h→A0h) to enter write mode; (2) hardware noise immunity rejecting glitches <15 ns on CE/OE/WE pins; and (3) automatic power-on/off protection via internal voltage detection that disables writes during unstable VCC transitions. These features collectively prevent accidental writes in electrically noisy industrial environments and during power cycling - all confirmed in Sections 16–19 of the R10DS0207EJ0200 datasheet.
Is R1EV58064BDANBI#B2 compliant with lead-free manufacturing standards?
Yes, the R1EV58064BDANBI#B2 is a lead-free product, as explicitly stated in the Features section of the R10DS0207EJ0200 datasheet. Its packaging (PRDP0028AB-A) complies with RoHS Directive requirements, and the "#B0" suffix in the orderable part number denotes Pb-free tray/tube packaging. This makes the R1EV58064BDANBI#B2 suitable for environmentally regulated industrial and medical applications requiring full substance compliance documentation.
R1EV58064BDANBI#B2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1EV58064BxxN
- Package/Case:
- 28-DIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- EEPROM
- Technology:
- EEPROM
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ms
- Access Time:
- 100 ns
- Voltage - Supply:
- 2.7V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-DIP
R1EV58064BDANBI#B2 FAQ
1.How can I place an order for R1EV58064BDANBI#B2 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1EV58064BDANBI#B2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1EV58064BDANBI#B2 reliable?
The price and inventory of R1EV58064BDANBI#B2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1EV58064BDANBI#B2 is usually 5 days.
3.What payment methods are accepted for R1EV58064BDANBI#B2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1EV58064BDANBI#B2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1EV58064BDANBI#B2?
R1EV58064BDANBI#B2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1EV58064BDANBI#B2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1EV58064BDANBI#B2?
For technical support, including R1EV58064BDANBI#B2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1EV58064BDANBI#B2 requirements.
6.How does Aetrix verify that R1EV58064BDANBI#B2 is sourced from the original manufacturer or authorized distributors?
All R1EV58064BDANBI#B2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EV58064BDANBI#B2 meets industry standards.
7.What is the process for return or replacement of R1EV58064BDANBI#B2?
All R1EV58064BDANBI#B2 units undergo pre-shipment inspection (PSI). If there is an issue with R1EV58064BDANBI#B2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1EV58064BDANBI#B2 part is unused and in its original packaging.
Return procedure for R1EV58064BDANBI#B2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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