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Renesas R1EV58064BDARBI#B2
- Part No.:
- R1EV58064BDARBI#B2
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-DIP (0.600", 15.24mm)
- Datasheet:
-
R1EV58064BDARBI#B2.pdf
- Description:
- IC EEPROM 64KBIT PARALLEL 28DIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,950
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Product details
Overview
R1EV58064BDARBI#B2 from Renesas Electronics is a 64 Kbit (8-Kword × 8-bit) parallel EEPROM with Ready/Busy signaling and hardware RES-based write protection. It operates from 2.7 V to 5.5 V, delivers 100 ns max access time at 2.7–4.5 V, supports automatic 64-byte page writes in ≤10 ms, and is rated for −40°C to +85°C industrial operation. It serves as nonvolatile configuration storage in embedded controllers requiring high reliability and noise-immune data retention.
For engineers reviewing the R1EV58064BDARBI#B2 datasheet, R1EV58064BDARBI#B2 pinout, R1EV58064BDARBI#B2 application, or R1EV58064BDARBI#B2 equivalent, key selection considerations include its RES-enabled hardware write lock, MONOS memory cell endurance (≥10⁵ cycles), JEDEC-compliant byte-wide interface, and compatibility with legacy 28-pin DIP-based board layouts.
Technical Context
This device implements a parallel byte-wide interface with CE/OE/WE control logic, on-chip address/data latches, and dual-mode write execution (byte or 64-byte page). Its MONOS floating-gate technology enables low-power active operation (20 mW/MHz typ) and ultra-low standby current (≤110 µW).
The RES pin provides hardware-level write inhibition during power transitions-asserting RES low disables all read/write operations and prevents inadvertent programming during CPU reset sequences. RDY/Busy and data polling (I/O7 toggle) offer real-time status feedback without requiring external timing margins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8,192 × 8-bit), sufficient for firmware parameter tables or calibration data in microcontroller systems |
| Access time | 100 ns max at 2.7–4.5 V; enables direct interfacing with legacy 8-bit MCUs running at ≤10 MHz |
| Write cycle time | 10 ms max per byte or 64-byte page; eliminates need for external wait-state generation |
| Endurance & retention | ≥100,000 erase/write cycles and ≥10 years data retention at +85°C; validated for industrial field deployment |
| Supply voltage | 2.7 V to 5.5 V single supply; interoperable with both 3.3 V and 5 V logic families without level shifting |
| Operating temperature | −40°C to +85°C industrial grade; qualified for use in motor drives, PLC I/O modules, and HVAC controllers |
| Package | 28-pin plastic DIP (600 mil), compatible with through-hole assembly and legacy socketed designs |
Pinout & Package
Package: 28-pin plastic DIP (PRDP0028AB-A / DP-28V), 13.4 mm × 35.6 mm body, 2.54 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Power supply | Primary 2.7–5.5 V supply rail; requires local 0.1 µF decoupling adjacent to pin |
| 2 WE | Write enable | Active-low control initiating byte/page write; falling edge latches address and data |
| 3 RES | Reset input | Active-low hardware write lock; forces high-impedance I/O and inhibits all operations when low |
| 4–11 A8–A9, A11–A10 | Address inputs | Upper address bits for 13-bit addressing (A0–A12); A6–A12 define 64-byte page boundaries |
| 12 OE | Output enable | Active-low control enabling data output drivers; used with CE for read gating |
| 13 CE | Chip enable | Active-low global select; falling edge also latches address during write operations |
| 14–21 I/O7–I/O0 | Data I/O | Bi-directional 8-bit data bus; I/O7 used for data polling, I/O6 for toggle-bit status indication |
| 22 RDY/Busy | Status output | Open-drain signal pulled low during internal write; eliminates need for software timeout loops |
| 23–27 A12, A7–A0 | Address inputs | Full 13-bit address space (8,192 locations); A0–A5 select byte within 64-byte page |
| 28 VSS | Ground | Reference return for all signals; must be connected to system ground plane with low-inductance path |
Key Features
| Feature | Design Value |
|---|---|
| Hardware RES write protection | Prevents spurious writes during power-up/down by disabling all I/O activity when RES = low |
| 64-byte page programming | Reduces average write latency by 64× vs. byte mode; ideal for logging burst data or updating configuration blocks |
| RDY/Busy and data polling | Dual-status mechanisms eliminate fixed delay waits-enabling deterministic firmware timing and reduced CPU overhead |
| MONOS memory cell technology | Delivers 10⁵ endurance cycles and >10-year data retention at +85°C without wear leveling firmware |
| JEDEC byte-wide standard compliance | Ensures drop-in compatibility with existing 28-pin parallel EEPROM sockets and controller timing profiles |
Applications
| Industrial PLC Configuration Storage | Automotive ECU Calibration Data |
|---|---|
|
Use Scenario: Storing I/O mapping tables and user-defined logic parameters in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile configuration register accessed via parallel bus during boot and runtime reconfiguration. Use Value: RES pin ensures immunity to power-rail transients during factory commissioning or field firmware updates. |
Use Scenario: Retaining engine calibration constants and sensor offset values across vehicle ignition cycles. IC Role / Device Role / Timing Role: High-reliability parameter store interfaced to MCU's external memory bus with minimal glue logic. Use Value: 100 ns access time enables zero-wait-state reads during real-time control loops; MONOS cell guarantees data integrity over 15+ year service life. |
| Medical Device Setup Profiles | Networking Equipment Boot Parameters |
|
Use Scenario: Preserving user-selectable therapy modes and safety thresholds in portable diagnostic instruments. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage of regulatory-critical settings with hardware write lock. Use Value: RES-driven protection satisfies IEC 62304 software safety requirements by preventing unintended writes during power transitions. |
Use Scenario: Holding MAC address, PHY initialization scripts, and fail-safe boot images in Ethernet switches and routers. IC Role / Device Role / Timing Role: Parallel EEPROM mapped into MCU's external memory space for fast, deterministic boot sequence execution. Use Value: Page-write capability allows full 64-byte parameter block updates in single atomic operation-eliminating partial-write corruption risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C64B-15PU | No RES pin; 150 ns access time; 5 V only (4.5–5.5 V) | Lacks hardware write lock; requires software-only protection; slower timing limits MCU clock headroom | Select if legacy 5 V-only systems prioritize cost over RES-based safety and speed |
| FM24CL64B | F-RAM technology; 55 ns access; no write delay; unlimited endurance | Eliminates write latency entirely but lacks RES pin and uses different pinout (SOIC-28) | Select for high-write-frequency logging where deterministic sub-µs writes outweigh RES requirement |
Compared with AT28C64B-15PU and FM24CL64B, R1EV58064BDARBI#B2 uniquely combines RES-based hardware write inhibition, 100 ns speed at 3.3 V, and 28-pin DIP compatibility-making it optimal for industrial upgrades requiring safety-critical data integrity without PCB redesign.
Availability
R1EV58064BDARBI#B2 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical diagnostics equipment, and networking gear requiring stable component supply across long product lifecycles.
Supply support for R1EV58064BDARBI#B2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
R1EV58064BDARBI#B2 belongs to Renesas' parallel EEPROM product line designed for robust, pin-compatible replacement of legacy EEPROMs in space-constrained, high-reliability embedded systems.
FAQ
What is the function of the RES pin on the R1EV58064BDARBI#B2?
The RES pin on the R1EV58064BDARBI#B2 is an active-low hardware reset input that disables all read and write operations when asserted low. It prevents unintended programming during power-on/off sequences and is essential for meeting IEC 62304 safety requirements. The R1EV58064BDARBI#B2 requires RES to be held high for at least 10 ms after the final data input to complete programming reliably.
Does the R1EV58064BDARBI#B2 support both byte and page write modes?
Yes, the R1EV58064BDARBI#B2 supports both byte and 64-byte page write modes. Page writes complete in ≤10 ms and require sequential address increments within 30 µs of each preceding WE or CE falling edge. This capability reduces firmware overhead and eliminates partial-write corruption risks compared to discrete byte writes, making the R1EV58064BDARBI#B2 ideal for configuration block updates.
How does the RDY/Busy signal operate on the R1EV58064BDARBI#B2?
The RDY/Busy signal on the R1EV58064BDARBI#B2 is an open-drain output that pulls low immediately after a write command and returns to high-impedance upon write completion. It enables hardware-synchronized polling without fixed delays, reducing CPU utilization and ensuring deterministic timing. Unlike software polling via I/O7, RDY/Busy requires only one GPIO input and eliminates bus contention during status checks.
What is the maximum operating voltage and temperature range for the R1EV58064BDARBI#B2?
The R1EV58064BDARBI#B2 operates from 2.7 V to 5.5 V and is rated for −40°C to +85°C industrial temperature range. Its MONOS memory cell technology maintains 10⁵ write cycles and >10-year data retention even at the upper limit of this range. This makes the R1EV58064BDARBI#B2 suitable for under-hood automotive modules, factory-floor PLCs, and outdoor telecom equipment.
Is the R1EV58064BDARBI#B2 pin-compatible with older 28-pin parallel EEPROMs?
Yes, the R1EV58064BDARBI#B2 uses a standard 28-pin DIP package (PRDP0028AB-A) with JEDEC-compliant pinout, matching legacy devices like the AT28C64B. Its VCC, VSS, CE, OE, WE, A0–A12, and I/O0–I/O7 assignments align directly-enabling drop-in replacement in existing sockets. The addition of RES on pin 3 does not conflict with prior designs, as that pin was NC on earlier parts.
R1EV58064BDARBI#B2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1EV58064BxxR
- Package/Case:
- 28-DIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- EEPROM
- Technology:
- EEPROM
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ms
- Access Time:
- 100 ns
- Voltage - Supply:
- 2.7V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-DIP
R1EV58064BDARBI#B2 FAQ
1.How can I place an order for R1EV58064BDARBI#B2 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1EV58064BDARBI#B2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1EV58064BDARBI#B2 reliable?
The price and inventory of R1EV58064BDARBI#B2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1EV58064BDARBI#B2 is usually 5 days.
3.What payment methods are accepted for R1EV58064BDARBI#B2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1EV58064BDARBI#B2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1EV58064BDARBI#B2?
R1EV58064BDARBI#B2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1EV58064BDARBI#B2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1EV58064BDARBI#B2?
For technical support, including R1EV58064BDARBI#B2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1EV58064BDARBI#B2 requirements.
6.How does Aetrix verify that R1EV58064BDARBI#B2 is sourced from the original manufacturer or authorized distributors?
All R1EV58064BDARBI#B2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EV58064BDARBI#B2 meets industry standards.
7.What is the process for return or replacement of R1EV58064BDARBI#B2?
All R1EV58064BDARBI#B2 units undergo pre-shipment inspection (PSI). If there is an issue with R1EV58064BDARBI#B2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1EV58064BDARBI#B2 part is unused and in its original packaging.
Return procedure for R1EV58064BDARBI#B2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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