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Renesas R1EV58064BSCNBI#B2
- Part No.:
- R1EV58064BSCNBI#B2
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-SOIC (0.330", 8.40mm Width)
- Datasheet:
-
R1EV58064BSCNBI#B2.pdf
- Description:
- IC EEPROM 64KBIT PARALLEL 28SOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,218
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Product details
Overview
R1EV58064BSCNBI#B2 from Renesas Electronics is a 64 Kbit (8-Kword × 8-bit) parallel EEPROM with MONOS memory technology, 100 ns access time at 2.7–4.5 V, Ready/Busy signaling, and software data protection. It operates across –40°C to +85°C and supports automatic byte/page write (64-byte max) in industrial embedded systems requiring nonvolatile parameter storage.
For engineers reviewing the R1EV58064BSCNBI#B2 datasheet, R1EV58064BSCNBI#B2 pinout, R1EV58064BSCNBI#B2 application, or R1EV58064BSCNBI#B2 equivalent, key selection criteria include its 28-pin SOP-400mil package, RES pin absence (N-series), 10⁵ write cycles, 10-year data retention, and JEDEC-compliant byte-wide interface for legacy microcontroller bus interfacing.
Technical Context
This device implements a parallel asynchronous interface with address latching on CE or WE falling edge and data latching on rising edge. Its internal high-voltage generator enables single-supply 2.7–5.5 V operation without external programming voltage.
The R1EV58064BSCNBI#B2 belongs to the N-series variant-lacking the RES (Reset) pin-and relies solely on software data protection (AA/55/A0 unlock sequence) and hardware control pin noise immunity (≤15 ns) for write inhibition during power transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8,192 × 8-bit), sufficient for firmware configuration tables or calibration data in resource-constrained systems |
| Access time | 100 ns max at 2.7–4.5 V; enables direct connection to 10 MHz microcontroller buses without wait states |
| Write endurance | 100,000 erase/write cycles; supports field-updatable parameters in industrial controllers with multi-year service life |
| Data retention | 10+ years at +85°C; ensures long-term reliability in unattended equipment like remote sensors or power meters |
| Supply voltage | 2.7–5.5 V single supply; interoperable with 3.3 V and 5 V logic families without level shifters |
| Operating temperature | –40°C to +85°C industrial grade; qualified for use in factory automation, HVAC, and transportation electronics |
| Page write size | 64-byte page programming; reduces firmware update time by up to 64× versus byte-by-byte writes |
Pinout & Package
Package: 400-mil 28-pin plastic SOP (PRSP0028DC-A / FP-28DV), lead-free, surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Power supply | Primary 2.7–5.5 V input; requires local 0.1 µF decoupling adjacent to pin |
| 2 WE | Write enable | Active-low control for initiating write cycles; latches address/data on edge transitions |
| 3 NC | No connection | Internally unconnected; must remain floating or tied to ground per layout guidelines |
| 4–14 A8–A0 | Address inputs | 13-bit address bus (A0–A12); A6–A12 serve as page address bits during 64-byte writes |
| 15 RDY/Busy | Status output | Open-drain signal pulled low during internal write; used for hardware flow control instead of polling |
| 16–28 A12–A1, I/O0–I/O2, VSS | Address/data/ground | A12–A1 complete 13-bit addressing; I/O0–I/O7 are bidirectional data lines; VSS is system ground reference |
Key Features
| Feature | Design Value |
|---|---|
| MONOS memory cell | Enables 10⁵ write cycles and 10-year data retention without charge-pump degradation seen in floating-gate EEPROMs |
| 64-byte page write | Reduces firmware update latency by batching sequential writes-critical for real-time logging applications |
| Ready/Busy signaling | Hardware handshake eliminates need for software polling, freeing CPU cycles during nonvolatile writes |
| Software data protection | Three-byte unlock sequence (1555h/0AAAh/1555h/A0h) prevents accidental writes during power transients or noise events |
| JEDEC byte-wide compliance | Guarantees interoperability with legacy 8-bit microcontrollers and FPGA-based bus interfaces without custom glue logic |
Applications
| Industrial PLC Configuration Storage | Automotive ECU Calibration Data |
|---|---|
Use Scenario: Storing I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile parallel EEPROM providing byte-addressable read/write access via microcontroller's data bus with <100 ns timing margin. Use Value: Enables field updates without firmware reflashing; 10⁵-cycle endurance supports decades of recalibration events. | Use Scenario: Retaining sensor offset corrections, fuel trim values, and diagnostic trouble code history in engine control units operating across automotive temperature ranges. IC Role / Device Role / Timing Role: JEDEC-compliant EEPROM interfaced directly to 8-bit MCU bus; leverages RDY/Busy for deterministic write completion detection. Use Value: Eliminates need for external voltage supervisors or reset controllers to prevent corruption during cold cranking or battery dips. |
| Medical Device Setup Profiles | Networking Equipment Boot Parameters |
Use Scenario: Saving user-configurable therapy settings, alarm limits, and device ID in portable infusion pumps and patient monitors. IC Role / Device Role / Timing Role: Industrial-grade EEPROM with –40°C to +85°C operation, supporting reliable data persistence during sterilization cycles and battery-backed operation. Use Value: 10-year data retention meets FDA Class II device longevity requirements without periodic refresh routines. | Use Scenario: Holding MAC address, PHY configuration, and boot loader flags in Ethernet switches and wireless access points. IC Role / Device Role / Timing Role: Parallel interface EEPROM mapped into microcontroller's memory space; uses software data protection to prevent inadvertent overwrite during firmware upgrades. Use Value: Prevents network outage due to corrupted boot parameters-critical for carrier-grade equipment with zero-downtime SLAs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C64B-15PU | 150 ns access time; 5 V only (4.5–5.5 V); no Ready/Busy pin; 10⁴ endurance cycles | Lacks hardware status signaling and wide-voltage support; suited for legacy 5 V-only designs | Select when cost sensitivity outweighs speed and voltage flexibility; verify timing margins with target MCU |
| FM24V06-G | F-RAM technology; 55 ns access; unlimited endurance; 2.7–3.6 V only; SPI interface | Serial interface replaces parallel bus; eliminates address/data multiplexing but requires protocol stack | Choose for ultra-high-write-frequency logging where EEPROM wear-out is a concern; accept SPI integration effort |
Compared with AT28C64B-15PU and FM24V06-G, the R1EV58064BSCNBI#B2 delivers faster 100 ns access, broader 2.7–5.5 V operation, hardware RDY/Busy signaling, and higher 10⁵ endurance-making it optimal for new industrial designs needing robust parallel EEPROM performance without voltage or interface compromises.
Availability
R1EV58064BSCNBI#B2 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical device configuration storage, and networking equipment boot parameter retention requiring stable component supply over extended production lifecycles.
Supply support for R1EV58064BSCNBI#B2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1EV58064BxxN/R series targets industrial and consumer applications requiring high-reliability, low-power parallel EEPROMs with extended temperature range and advanced MONOS cell technology for long-term data integrity.
FAQ
What is the maximum operating voltage for the R1EV58064BSCNBI#B2?
The R1EV58064BSCNBI#B2 supports a supply voltage range of 2.7 V to 5.5 V. Operation above 5.5 V violates absolute maximum ratings and may cause permanent damage. At 5.5 V, access time improves to 70 ns, and power dissipation increases to 25 mA under full bus activity-designers must verify thermal margins in high-density layouts.
Does the R1EV58064BSCNBI#B2 include a hardware reset (RES) pin?
No, the R1EV58064BSCNBI#B2 belongs to the "N" series and does not feature a RES pin. This distinguishes it from the "R" series variants (e.g., R1EV58064BSCRBI#B0). Write protection relies exclusively on software data protection (AA/55/A0 unlock sequence) and noise-immune control pin design per the datasheet's 15 ns noise rejection specification.
How many bytes can be written in a single page operation on the R1EV58064BSCNBI#B2?
The R1EV58064BSCNBI#B2 supports 64-byte page writes. The device automatically latches A6–A12 as page address bits on the first falling edge of WE or CE, enabling sequential loading of up to 64 bytes within a 30 µs window. Each byte load cycle must begin within 30 µs of the prior WE/CE falling edge to maintain page mode.
What is the guaranteed data retention period for the R1EV58064BSCNBI#B2 at maximum operating temperature?
The R1EV58064BSCNBI#B2 guarantees 10+ years of data retention at +85°C. This specification is validated per JEDEC standards and reflects worst-case conditions including full endurance cycling. At lower temperatures (e.g., +25°C), retention extends significantly beyond 10 years-enabling use in long-lifecycle infrastructure deployments.
Is the R1EV58064BSCNBI#B2 RoHS compliant and lead-free?
Yes, the R1EV58064BSCNBI#B2 is lead-free and RoHS compliant, as indicated by the "#B0" suffix in its orderable part number and confirmed in the Renesas datasheet's packaging section. It uses matte tin termination finish and conforms to EU Directive 2011/65/EU, making it suitable for environmentally regulated commercial and industrial applications.
R1EV58064BSCNBI#B2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1EV58064BxxN
- Package/Case:
- 28-SOIC (0.330", 8.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- EEPROM
- Technology:
- EEPROM
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ms
- Access Time:
- 100 ns
- Voltage - Supply:
- 2.7V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOP
R1EV58064BSCNBI#B2 FAQ
1.How can I place an order for R1EV58064BSCNBI#B2 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1EV58064BSCNBI#B2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1EV58064BSCNBI#B2 reliable?
The price and inventory of R1EV58064BSCNBI#B2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1EV58064BSCNBI#B2 is usually 5 days.
3.What payment methods are accepted for R1EV58064BSCNBI#B2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1EV58064BSCNBI#B2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1EV58064BSCNBI#B2?
R1EV58064BSCNBI#B2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1EV58064BSCNBI#B2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1EV58064BSCNBI#B2?
For technical support, including R1EV58064BSCNBI#B2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1EV58064BSCNBI#B2 requirements.
6.How does Aetrix verify that R1EV58064BSCNBI#B2 is sourced from the original manufacturer or authorized distributors?
All R1EV58064BSCNBI#B2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EV58064BSCNBI#B2 meets industry standards.
7.What is the process for return or replacement of R1EV58064BSCNBI#B2?
All R1EV58064BSCNBI#B2 units undergo pre-shipment inspection (PSI). If there is an issue with R1EV58064BSCNBI#B2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1EV58064BSCNBI#B2 part is unused and in its original packaging.
Return procedure for R1EV58064BSCNBI#B2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1EV58064BSCNBI#B2 Tags
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