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Renesas R1EV58064BTCNBI#B2
- Part No.:
- R1EV58064BTCNBI#B2
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1EV58064BTCNBI#B2.pdf
- Description:
- IC EEPROM 64KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,342
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Product details
Overview
R1EV58064BTCNBI#B2 from Renesas Electronics is a 64 Kbit (8-Kword × 8-bit) parallel EEPROM organized with MONOS nonvolatile memory technology, supporting 100 ns access time at 2.7–4.5 V, Ready/Busy signaling, and software data protection. It operates across –40°C to +85°C and delivers 10⁵ write/erase cycles with ≥10-year data retention in industrial control, instrumentation, and embedded system configuration storage.
For engineers reviewing the R1EV58064BTCNBI#B2 datasheet, R1EV58064BTCNBI#B2 pinout, R1EV58064BTCNBI#B2 application, or R1EV58064BTCNBI#B2 equivalent, key selection criteria include TSOP-28 package compatibility, 2.7–5.5 V single-supply operation, page-write capability (64-byte), and RES pin absence-confirming it belongs to the R1EV58064BxxN series without hardware reset protection.
Technical Context
This device implements byte- and page-write operations via CE/WE-controlled latching of A0–A12 addresses and I/O0–I/O7 data, with internal timing governed by high-voltage generation and control logic. Its RDY/Busy pin provides hardware status feedback during internal write cycles, while data polling (I/O7 toggle) and software data protection (3-byte unlock sequence) enable robust firmware-level write control.
The R1EV58064BTCNBI#B2 uses MONOS charge-trapping memory cells on a CMOS process, delivering low active power (20 mW/MHz typ) and standby current (≤5 µA), with noise immunity for control pins (≤15 ns pulse rejection) and built-in VCC on/off data protection through proper CE/OE/WE biasing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8,192 × 8-bit), sufficient for firmware parameter tables or calibration data in resource-constrained systems |
| Access time | 100 ns max at 2.7–4.5 V; enables direct interface with legacy 8-bit microcontrollers running at ≤10 MHz |
| Supply voltage | 2.7–5.5 V single supply; interoperable with 3.3 V and 5 V logic families without level translation |
| Write endurance | ≥100,000 erase/write cycles; supports frequent field-updatable configuration storage over product lifetime |
| Data retention | ≥10 years at +85°C; ensures long-term reliability in industrial environments without refresh |
| Operating temperature | –40°C to +85°C; qualified for extended industrial applications including motor drives and PLC modules |
| Page write size | 64-byte page programming; reduces firmware write latency by up to 64× versus byte-by-byte writes |
Pinout & Package
Package: 28-pin plastic TSOP (PTSA0028ZB-A / TFP-28DBV), 8.0 mm × 11.8 mm footprint, 0.55 mm pitch, surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | 2.7–5.5 V main supply; decoupling capacitor required within 10 mm for noise suppression |
| VSS | Ground | Reference return path; must be connected to system ground plane with low-inductance trace |
| A0–A12 | Address input | 13-bit address bus; A6–A12 latched on first WE/CE falling edge for page addressing |
| I/O0–I/O7 | Data input/output | Bi-directional 8-bit data bus; supports read, byte write, and page write with internal latching |
| CE | Chip enable | Active-low chip select; controls device activation and address/data latching in CE-controlled write mode |
| OE | Output enable | Active-low output gate; places I/O bus in high-impedance state when deasserted during reads |
| WE | Write enable | Active-low write strobe; initiates byte/page write and latches address/data in WE-controlled mode |
| RDY/Busy | Status output | Open-drain signal pulled low during internal write; used for hardware wait-state insertion |
| NC | No connection | Pin 3 is unconnected; must remain floating-no external tie or routing |
Key Features
| Feature | Design Value |
|---|---|
| MONOS memory cell technology | Enables high endurance (10⁵ cycles) and 10+ year data retention without wear leveling firmware |
| 64-byte page write | Reduces typical firmware update time from ~640 ms (byte-wise) to ~10 ms per page |
| Ready/Busy signaling | Allows deterministic hardware wait-state insertion instead of polling, reducing CPU overhead |
| Software data protection | Prevents accidental writes via 3-byte unlock sequence (AAh→55h→A0h), eliminating need for external lock circuitry |
| Control pin noise immunity | Rejects transients ≤15 ns on CE/OE/WE, preventing spurious writes in electrically noisy industrial settings |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data |
|---|---|
Use Scenario: Storing I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Nonvolatile configuration register bank accessed via parallel bus during boot and runtime updates. Use Value: 100 ns access enables real-time parameter reload without scan cycle interruption; 10⁵ endurance supports daily field recalibration over 27 years. | Use Scenario: Retaining sensor offset/gain coefficients and patient-specific therapy settings in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for FDA-required calibration history and usage logs. Use Value: Software data protection prevents unauthorized parameter changes; 10-year retention meets medical device shelf-life requirements without battery backup. |
| Automotive Body Control Module | Test Equipment Firmware Patch Storage |
Use Scenario: Holding seat/mirror position presets, lighting profiles, and door lock configurations in 12 V automotive body control units. IC Role / Device Role / Timing Role: Parallel EEPROM interfaced to 8-bit MCU for fast, deterministic NVM access during vehicle power-up. Use Value: –40°C to +85°C rating ensures operation under hood temperatures; 2.7–5.5 V range accommodates brown-out conditions during cranking. | Use Scenario: Storing field-upgradable firmware patches and instrument-specific calibration constants in benchtop oscilloscopes and spectrum analyzers. IC Role / Device Role / Timing Role: Local patch repository enabling offline firmware updates without host PC dependency. Use Value: 64-byte page write accelerates patch deployment; RDY/Busy signal synchronizes flash programming with test equipment UI responsiveness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C64B-15PU | 150 ns access time; 5 V only (4.5–5.5 V); no Ready/Busy pin; 10⁴ endurance | Lacks hardware status signaling and multi-voltage support; lower endurance limits field update frequency | Select only if legacy 5 V-only design and slower timing are acceptable; verify layout for missing RDY/Busy routing |
| FM24CL64B | Serial (I²C) interface; 400 kHz clock; 3.3 V only; FRAM-based (unlimited endurance) | Requires protocol stack and I²C pull-ups; eliminates write latency but adds software complexity | Choose for ultra-high write-cycle applications where serial interface overhead is acceptable and voltage is fixed at 3.3 V |
Compared with AT28C64B-15PU and FM24CL64B, the R1EV58064BTCNBI#B2 offers faster 100 ns parallel access, dual-voltage operation, hardware RDY/Busy signaling, and higher 10⁵ endurance-making it optimal for industrial systems requiring deterministic timing, wide supply range, and frequent field updates without protocol abstraction.
Availability
R1EV58064BTCNBI#B2 is available at Aetrix Electronics and suitable for industrial PLC configuration storage, medical device calibration data retention, and automotive body control module parameter backup requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1EV58064BTCNBI#B2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1EV58064BxxN series targets cost-sensitive, high-reliability industrial applications requiring parallel EEPROM with enhanced endurance, wide voltage operation, and robust noise immunity-without hardware reset functionality.
FAQ
What is the maximum operating voltage for R1EV58064BTCNBI#B2?
The R1EV58064BTCNBI#B2 supports a maximum supply voltage of 5.5 V, with absolute maximum rating up to +7.0 V relative to VSS. Operation above 5.5 V violates recommended DC conditions and risks permanent damage. The device is fully specified from 2.7 V to 5.5 V, ensuring compatibility with both 3.3 V and 5 V logic systems without level shifters. Always observe the VCC + 1.0 V limit for VIH inputs.
Does R1EV58064BTCNBI#B2 include a hardware reset (RES) pin?
No, R1EV58064BTCNBI#B2 does not include a RES pin. The "N" suffix in its part number denotes the R1EV58064BxxN series, which omits the RES function. Pin 3 is marked NC (No Connection) in the TSOP-28 pinout. Hardware reset-based write protection is exclusive to the R-series variants (e.g., R1EV58064BTCRBI#B0). For R1EV58064BTCNBI#B2, software data protection (3-byte unlock sequence) is the primary write safeguard.
What is the write cycle time for R1EV58064BTCNBI#B2 during page programming?
The maximum write cycle time for R1EV58064BTCNBI#B2 during 64-byte page programming is 10 ms, regardless of VCC level (2.7–5.5 V). This value represents the worst-case internal programming duration after the final byte load. The RDY/Busy pin transitions low at write start and returns to high-impedance upon completion, allowing hardware wait-state synchronization. Polling I/O7 toggle or using RDY/Busy avoids fixed 10 ms delays in firmware.
How many write/erase cycles does R1EV58064BTCNBI#B2 guarantee?
R1EV58064BTCNBI#B2 guarantees a minimum of 100,000 (10⁵) write/erase cycles per memory location, measured at 1% cumulative failure rate. This endurance is achieved via MONOS memory cell architecture and applies across the full –40°C to +85°C operating temperature range. Endurance is unaffected by voltage (2.7–5.5 V) or interface method (byte vs. page write), making it suitable for applications requiring frequent field updates over multi-year deployments.
Is R1EV58064BTCNBI#B2 lead-free and RoHS compliant?
Yes, R1EV58064BTCNBI#B2 is lead-free and RoHS compliant, as indicated by the "#B0" suffix denoting Pb-free tray packaging. Renesas confirms compliance with EU RoHS Directive 2011/65/EU, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. The TSOP-28 package (PTSA0028ZB-A) uses matte tin terminations and halogen-free molding compound. Full compliance documentation is available in Renesas' official environmental reports.
R1EV58064BTCNBI#B2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1EV58064BxxN
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- EEPROM
- Technology:
- EEPROM
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ms
- Access Time:
- 100 ns
- Voltage - Supply:
- 2.7V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1EV58064BTCNBI#B2 FAQ
1.How can I place an order for R1EV58064BTCNBI#B2 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1EV58064BTCNBI#B2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1EV58064BTCNBI#B2 reliable?
The price and inventory of R1EV58064BTCNBI#B2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1EV58064BTCNBI#B2 is usually 5 days.
3.What payment methods are accepted for R1EV58064BTCNBI#B2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1EV58064BTCNBI#B2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1EV58064BTCNBI#B2?
R1EV58064BTCNBI#B2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1EV58064BTCNBI#B2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1EV58064BTCNBI#B2?
For technical support, including R1EV58064BTCNBI#B2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1EV58064BTCNBI#B2 requirements.
6.How does Aetrix verify that R1EV58064BTCNBI#B2 is sourced from the original manufacturer or authorized distributors?
All R1EV58064BTCNBI#B2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EV58064BTCNBI#B2 meets industry standards.
7.What is the process for return or replacement of R1EV58064BTCNBI#B2?
All R1EV58064BTCNBI#B2 units undergo pre-shipment inspection (PSI). If there is an issue with R1EV58064BTCNBI#B2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1EV58064BTCNBI#B2 part is unused and in its original packaging.
Return procedure for R1EV58064BTCNBI#B2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1EV58064BTCNBI#B2 Tags
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