Renesas R1EX24512ASAS0I#S1

Overview

R1EX24512ASAS0I from Renesas Electronics is a 512 kbit (64-kword × 8-bit) two-wire serial interface EEPROM with I²C bus compatibility, 1.8 V to 5.5 V single-supply operation, and 128-byte page write capability. It delivers 5 ms write cycle time, 1,000k endurance cycles at 25°C, and 100-year data retention - deployed in industrial control modules for parameter storage and calibration persistence.

For engineers reviewing the R1EX24512ASAS0I datasheet, R1EX24512ASAS0I pinout, R1EX24512ASAS0I application, or R1EX24512ASAS0I equivalent, key selection criteria include I²C clock support up to 1 MHz (at ≥2.5 V), WP-enabled hardware write protection, SOP-8 package compatibility, and −40°C to +85°C industrial temperature operation.

Technical Context

This device implements a two-wire I²C-compatible serial interface with fixed 1010 device code and programmable A0/A1 address pins enabling up to four devices on one bus. It uses MNOS memory technology with CMOS low-voltage circuitry to achieve low-power operation and high reliability.

Internal architecture includes an address generator, X/Y decoders, sense amplifiers, and serial-parallel conversion logic. Write operations are internally timed with automatic page write (128-byte boundary alignment), and acknowledge polling supports host synchronization without fixed delay timing.

Key Specifications

Pinout & Package

Package: 8-pin SOP (PRSP0008DF-B / FP-8DBV), 150 mil width, lead-free, surface-mount compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar EEPROM applications.

Compared with AT24C512B-PU and BR24G512FJ-WE2, the R1EX24512ASAS0I offers tighter tAA (550 ns) at 2.5–5.5 V and lower ISB (2 µA), making it optimal for battery-powered edge sensors and fast-response industrial controllers where timing margin and quiescent power are critical.

Availability

R1EX24512ASAS0I is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and smart metering applications requiring stable component supply, long-lifecycle support, and guaranteed traceability.

Supply support for R1EX24512ASAS0I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1EX24xxx series was designed specifically for high-reliability, low-power nonvolatile storage in space-constrained embedded systems - emphasizing write endurance, data retention, and I²C interoperability across voltage domains.

FAQ

What is the maximum I²C clock frequency supported by the R1EX24512ASAS0I?

The R1EX24512ASAS0I supports up to 1 MHz I²C clock frequency when operated at 2.5 V to 5.5 V supply, and 400 kHz at 1.8 V to 5.5 V. This dual-speed capability allows integration with both legacy 400 kHz controllers and modern high-speed microcontrollers while maintaining full timing compliance per I²C specification. The R1EX24512ASAS0I's tLOW and tHIGH minima scale accordingly to ensure reliable sampling.

How does the WP pin function on the R1EX24512ASAS0I?

When the WP pin on the R1EX24512ASAS0I is driven high (VIH ≥ 0.7 × VCC), all write operations - including byte, page, and sequential writes - are blocked, and the device responds with "no acknowledge" (NACK) after address reception. When WP is low (VIL ≤ 0.3 × VCC), full read/write access is enabled. This hardware-level protection operates independently of software state and remains active across power cycles.

What is the page size and write cycle time for the R1EX24512ASAS0I?

The R1EX24512ASAS0I features a 128-byte page size and a maximum write cycle time of 5 ms. This means up to 128 bytes can be written in a single atomic operation, reducing host CPU overhead versus byte-by-byte writes. The 5 ms duration is the worst-case internal programming time after a STOP condition; the host may use acknowledge polling to detect completion earlier.

Does the R1EX24512ASAS0I require external pull-up resistors on SDA and SCL lines?

Yes, the R1EX24512ASAS0I requires external pull-up resistors on both SDA and SCL lines because its I/O structure is open-drain. Resistor values must be selected based on bus capacitance, VCC level, and desired rise time - typically 2.2 kΩ to 10 kΩ for standard-mode (400 kHz) and 1 kΩ to 4.7 kΩ for fast-mode (1 MHz) operation. The R1EX24512ASAS0I's VOL specification (0.4 V at 3 mA) defines the maximum allowable voltage drop.

What is the endurance and data retention specification for the R1EX24512ASAS0I?

The R1EX24512ASAS0I guarantees 1,000,000 write/erase cycles at 25°C and 100 years of data retention at 25°C. At 85°C, endurance drops to 100,000 cycles and retention to 10 years - values confirmed per JEDEC JESD22-A117 stress testing. These figures apply to the entire memory array and are not sample-limited; they reflect minimum guaranteed performance across the qualified lot.