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Renesas R1EX24512BTAS0I#S0

Part No.:
R1EX24512BTAS0I#S0
Manufacturer:
Renesas
Category:
Memory
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixR1EX24512BTAS0I#S0.pdf
Description:
IC EEPROM 512KBIT I2C 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,967

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Product details

Overview

R1EX24512BTAS0I from Renesas Electronics is a 512-kbit (64-kword × 8-bit) two-wire serial interface EEPROM using MONOS memory technology, operating from 1.8 V to 5.5 V supply, supporting up to 1 MHz I²C clock at 2.5–5.5 V, and rated for −40°C to +85°C industrial temperature range - deployed in embedded system configuration storage, sensor calibration data retention, and power-management parameter backup.

For engineers reviewing the R1EX24512BTAS0I datasheet, R1EX24512BTAS0I pinout, R1EX24512BTAS0I application, or R1EX24512BTAS0I equivalent, this page delivers verified electrical specs, TSSOP-8 pin mapping, real-world use cases, and validated alternative parts - all grounded in Renesas' R10DS0026EJ0500 Rev.5.00 preliminary datasheet.

Technical Context

This device implements a true two-wire I²C-compatible serial interface with SCL/SDA pins, internal address generator, and high-voltage charge pump for MONOS cell programming. It supports both byte-write and 128-byte page-write modes, with automatic address incrementing within pages and wraparound behavior on boundary overflow.

Write protection is hardware-controlled via the WP pin: logic-high disables all writes (full 512-kbit lock), while logic-low enables full read/write access. The device includes built-in noise suppression (50 ns filter on SCL/SDA), power-on reset circuitry, and voltage detector to prevent spurious writes during VCC ramp-up/down.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size512 kbit (65,536 × 8-bit words) - sufficient for firmware patch storage or multi-sensor calibration tables in compact systems
InterfaceI²C two-wire serial bus - compatible with standard microcontroller I²C peripherals without additional level-shifting in 1.8–5.5 V systems
Max clock frequency1 MHz (at VCC ≥ 2.5 V); 400 kHz (at VCC ≥ 1.8 V) - enables fast configuration loading while maintaining robustness at low voltage
Page write size128 bytes per write cycle - reduces host CPU overhead and I²C transaction count when updating contiguous data blocks
Write endurance1,000,000 cycles minimum - supports frequent recalibration or logging in industrial monitoring applications
Data retention100 years minimum at +85°C - ensures long-term reliability of stored parameters without refresh in sealed or inaccessible devices
Supply current (standby)2.0 μA max at 5.5 V - critical for battery-backed or energy-harvesting systems requiring ultra-low quiescent power
Operating temperature−40°C to +85°C - qualified for industrial-grade deployment in motor drives, PLCs, and outdoor IoT nodes

Pinout & Package

Package: 8-pin plastic TSSOP (PTSP0008JC-B / JEITA code TTP-8DAV), 4.4 mm × 3.0 mm body, 0.65 mm pitch, Ni/Pd/Au plating, lead-free and halogen-free compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A2Device address inputsHard-wired to VCC/VSS to select one of eight possible addresses on shared I²C bus; internally pulled down - safe default if left unconnected
VSSGround referencePrimary return path for all internal circuits and I/O drivers; must be low-impedance connection to avoid noise coupling into SDA/SCL
VCCPower supplySingle 1.8–5.5 V supply powering memory array, logic, and I/O; requires 0.1 μF ceramic bypass capacitor placed near pin
WPWrite protect controlActive-high hardware lock: logic-high disables all write operations across entire 512-kbit array; not internally pulled - must be driven
SCLSerial clock inputMaster-generated clock signal synchronizing all I²C transactions; accepts up to 1 MHz (2.5–5.5 V) with ≤300 ns rise/fall time
SDASerial data I/OOpen-drain bidirectional line requiring external pull-up; carries device address, memory address, and data; supports ACK/NACK signaling

Key Features

Feature Design Value
MONOS memory technologyEnables 1.8 V operation and 100-year data retention without charge-pump degradation mechanisms seen in floating-gate EEPROMs
128-byte page writeReduces typical write time per kilobyte by >7× versus byte-write mode, minimizing bus occupation and host MCU active time
Write cycle time5 ms maximum - deterministic internal timing allows precise host polling or timeout-based flow control without complex status registers
Noise suppression50 ns glitch filter on SCL/SDA inputs prevents false start/stop detection from EMI or crosstalk in noisy industrial environments
Power-on resetGuards against unintended writes during power ramp by holding internal logic in reset until VCC stabilizes above threshold
Halogen-free & RoHSComplies with environmental regulations for industrial and consumer equipment; Au wire bonding ensures long-term interconnect reliability

Applications

Industrial Sensor Calibration Embedded System Configuration

Use Scenario: Storing factory-trimmed offset/gain coefficients for analog sensor front-ends in programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile parameter store accessed at boot via I²C; retains values across power cycles and field reprogramming.

Use Value: Eliminates need for external trimming potentiometers or costly laser calibration; enables software-based recalibration in the field using the same 128-byte page-write efficiency.

Use Scenario: Holding user-defined settings (network IP, display brightness, alarm thresholds) in medical diagnostic handheld devices.

IC Role / Device Role / Timing Role: Configuration EEPROM interfaced to ARM Cortex-M0+ MCU; read at startup, written only on menu save events.

Use Value: Leverages 2.0 μA standby current to extend battery life; WP pin hardwired to ground ensures settings survive accidental firmware updates or brownouts.

Power Management Backup Motor Drive Parameter Storage

Use Scenario: Saving last-known state (voltage setpoint, fault history, runtime hours) in uninterruptible power supplies during AC loss.

IC Role / Device Role / Timing Role: Fast-write-capable nonvolatile memory triggered by power-fail interrupt; uses ACK polling to confirm write completion before shutdown.

Use Value: 5 ms write cycle and 1,000k endurance support frequent logging without wear-out; operates reliably down to 1.8 V during brownout conditions.

Use Scenario: Storing motor-specific commutation tables and thermal derating curves in BLDC drive modules used in HVAC compressors.

IC Role / Device Role / Timing Role: Factory-programmed lookup table storage accessed during initialization; updated only during service-mode firmware upgrades.

Use Value: TSSOP-8 package fits tight PCB layouts; −40°C to +85°C rating matches under-hood automotive-adjacent environments; WP pin enables secure field updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial EEPROM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AT24C512B-PU-2.7512-kbit I²C EEPROM; 1 MHz max clock only at ≥2.7 V; no MONOS - lower data retention (40 years) and endurance (100k cycles)Less suitable for long-life, high-write-count deployments; requires higher VCC for full speedChoose when cost sensitivity outweighs longevity requirements and system VCC stays ≥2.7 V
M95512-DFMN6TP512-kbit SPI EEPROM; 20 MHz interface; different protocol stack; no WP pin - write protection implemented via software lock bitsRequires SPI-capable host; incompatible with I²C-only designs; lacks hardware WP for fail-safe lockingChoose only if host already uses SPI peripherals and deterministic hardware write lock is not required

Compared with AT24C512B-PU-2.7 and M95512-DFMN6TP, the R1EX24512BTAS0I delivers superior data retention (100 vs. 40 years), higher endurance (1M vs. 100k cycles), guaranteed 1.8 V operation, and dedicated hardware write protection - making it optimal for mission-critical industrial firmware and calibration storage where reliability trumps interface flexibility.

Availability

R1EX24512BTAS0I is available at Aetrix Electronics and suitable for industrial sensor calibration, embedded system configuration, and power management backup requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for R1EX24512BTAS0I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The R1EX24xxx series was designed specifically for high-reliability, low-voltage serial EEPROM applications in space-constrained industrial systems - emphasizing MONOS-based endurance, wide VCC range, and robust noise immunity over legacy floating-gate alternatives.

FAQ

What is the maximum I²C clock frequency supported by R1EX24512BTAS0I?

The R1EX24512BTAS0I supports up to 1 MHz I²C clock frequency when VCC is 2.5 V to 5.5 V, and up to 400 kHz when VCC is 1.8 V to 5.5 V. These limits are defined in the AC Characteristics table of the R10DS0026EJ0500 datasheet and reflect guaranteed timing margins across temperature and voltage. Exceeding these frequencies may result in unreliable communication or missed acknowledgments.

Does R1EX24512BTAS0I require an external pull-up resistor on the SDA line?

Yes, R1EX24512BTAS0I requires an external pull-up resistor on the SDA line because its SDA pin uses an open-drain output structure. The datasheet specifies that the pull-up value must be selected based on VOL, IOL, and total bus capacitance - typically 2.2 kΩ to 10 kΩ for standard-mode I²C. Failure to install a pull-up will prevent proper ACK/NACK signaling and data transmission.

How does the Write Protect (WP) pin function on R1EX24512BTAS0I?

On R1EX24512BTAS0I, the WP pin is active-high: when driven to VCC (VIH), it disables all write operations across the full 512-kbit memory array, and the device responds with NACK after address reception. When pulled low (VIL), full read/write access is enabled. Unlike A0–A2 pins, WP is not internally pulled - it must be actively driven to avoid floating-state malfunction.

What is the page write capability of R1EX24512BTAS0I?

R1EX24512BTAS0I supports 128-byte page write operations, allowing up to 128 sequential bytes to be written in a single I²C transaction. This reduces host-side overhead and bus occupancy versus byte-write mode. Address auto-increment wraps within the 128-byte page boundary - writing beyond the page end overwrites earlier bytes in the same page unless a new page address is issued.

Is R1EX24512BTAS0I compatible with standard I²C protocol implementations?

Yes, R1EX24512BTAS0I is fully compatible with standard I²C protocol specifications, including start/stop conditions, 7-bit addressing (with fixed "1010" device code), ACK/NACK handshaking, and repeated start support. It adheres to I²C timing requirements for tLOW, tHIGH, tSU.STA, and tHD.STA across its specified voltage and temperature ranges per R10DS0026EJ0500 Rev.5.00.

R1EX24512BTAS0I#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
EEPROM
Technology:
EEPROM
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
I2C
Clock Frequency:
1 MHz
Write Cycle Time - Word, Page:
5ms
Access Time:
550 ns
Voltage - Supply:
1.8V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

R1EX24512BTAS0I#S0 FAQ

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All R1EX24512BTAS0I#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EX24512BTAS0I#S0 meets industry standards.

7.What is the process for return or replacement of R1EX24512BTAS0I#S0?

All R1EX24512BTAS0I#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1EX24512BTAS0I#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1EX24512BTAS0I#S0 part is unused and in its original packaging.

Return procedure for R1EX24512BTAS0I#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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