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Renesas R1LP0108ESA-5SI#B1

Part No.:
R1LP0108ESA-5SI#B1
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.465", 11.80mm Width)
Datasheet:
AetrixR1LP0108ESA-5SI#B1.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:224

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Product details

Overview

R1LP0108ESA-5SI#B1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, -40°C to +85°C industrial temperature range, and 4.5–5.5 V single-supply operation. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion in embedded control and battery-backed systems.

For engineers reviewing the R1LP0108ESA-5SI#B1 datasheet, R1LP0108ESA-5SI#B1 pinout, R1LP0108ESA-5SI#B1 application, or R1LP0108ESA-5SI#B1 equivalent, key selection criteria include standby current (0.6 µA typical at 5.0 V), data retention down to 2.0 V, three-state outputs with OR-tie capability, and sTSOP-32 package compatibility with space-constrained industrial PCB layouts.

Technical Context

This SRAM uses Renesas's 0.15 µm CMOS/TFT process to achieve low power and high density without refresh circuitry. Its architecture includes separate address buffers controlled by CS2, independent write enable (WE#) and output enable (OE#) logic, and a 128k-word × 8-bit memory array with column/row decoding and sense/write amplifiers.

Operation supports two data retention modes: CS2-controlled (0 V ≤ CS2 ≤ 0.2 V) or CS1#-controlled (CS1# ≥ Vcc − 0.2 V with CS2 ≥ Vcc − 0.2 V). Timing is defined by strict AC parameters including tAA = 55 ns, tOE = 30 ns, and tWHZ = 20 ns max, ensuring reliable interfacing with microcontrollers and ASICs operating at 5 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size1 Mb (131,072 words × 8 bits) - provides byte-wide data bus interface without external data multiplexing
Access time55 ns - enables direct connection to 12–15 MHz microcontroller buses without wait states
Supply voltage4.5–5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation variation
Standby current0.6 µA typical at 5.0 V and 25°C - supports multi-year battery backup in non-volatile memory applications
Data retention VCC2.0 V minimum - maintains stored data during brown-out or backup battery operation
Operating temperature-40°C to +85°C - qualified for industrial-grade deployment in harsh ambient environments
I/O compatibilityTTL - eliminates level-shifting requirements when interfacing with legacy 5 V microcontrollers and peripherals

Pinout & Package

Package: 32-pin sTSOP (8 mm × 13.4 mm, normal-bend type, PTSA0032KB-A).

Pin/Terminal Circuit Role Design Meaning
A0–A16Address inputs17-bit address bus supporting full 131,072-word addressing; A16 is MSB
DQ0–DQ7Bi-directional data I/OCommon data bus with three-state output drivers; enables OR-tie for memory expansion
CS1#, CS2Chip select inputsDual-select architecture allows hierarchical memory mapping and easy bank expansion
WE#Write enableActive-low control for write cycles; timing synchronized with CS1#/CS2 for glitch-free writes
OE#Output enablePrevents bus contention during read operations; decouples output driver from data bus
Vcc, VssPower supplySingle 5 V supply with dedicated ground; no separate I/O or core voltage rails required
NCNo connectPin 1 (NC) is unconnected - must remain floating per design; not usable as strap or test point

Key Features

Feature Design Value
No refresh requiredEliminates external refresh controller or CPU overhead - ideal for ultra-low-power and real-time deterministic systems
Low standby current0.6 µA typical at 5.0 V ensures >10-year battery life in backup mode using standard CR2032 cells
OR-tie capable outputsThree-state DQ lines allow multiple devices to share a common data bus without external logic or bus transceivers
Dual chip select (CS1#, CS2)Enables 2× memory expansion via simple address decode - e.g., A17 selects between two R1LP0108ESA-5SI#B1 devices
2.0 V data retentionMaintains valid memory contents during brown-out or main power loss - critical for fault logging and state recovery

Applications

Industrial PLC Data Buffer Medical Device Event Logger

Use Scenario: Real-time buffering of sensor readings and control commands in programmable logic controllers with limited board space and thermal constraints.

IC Role / Device Role / Timing Role: Byte-wide static RAM providing zero-wait-state storage for cyclic data acquisition and firmware update staging.

Use Value: 55 ns access time and -40°C to +85°C rating ensure deterministic response under variable load and ambient conditions; 0.6 µA standby enables extended runtime on auxiliary power.

Use Scenario: Non-volatile event logging in portable diagnostic equipment requiring tamper-proof timestamped records during power interruption.

IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical alarm timestamps, calibration data, and error codes across power cycles.

Use Value: 2.0 V data retention threshold guarantees memory integrity even during deep brown-out; TTL compatibility simplifies integration with existing 5 V MCU subsystems.

Automotive Body Control Module Point-of-Sale Terminal Memory

Use Scenario: Storing configuration settings, fault codes, and user preferences in automotive BCMs where ECU space and thermal dissipation are constrained.

IC Role / Device Role / Timing Role: Low-power, high-reliability SRAM serving as configuration scratchpad and volatile parameter store.

Use Value: Industrial temperature grade and 3 µA max standby current meet automotive cold-cranking and long-term parking requirements without active cooling.

Use Scenario: Fast-access working memory in retail terminals handling transaction queues, receipt buffers, and encryption key staging.

IC Role / Device Role / Timing Role: Primary 1 MB SRAM interfaced directly to ARM9 or similar host processor for low-latency data handling.

Use Value: 55 ns read cycle and OE#-controlled output disable prevent bus conflicts during multi-peripheral arbitration; sTSOP-32 footprint saves PCB area versus SOP alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV10248AL-10TLI10 ns faster access (45 ns), same 1 Mb × 8, but higher standby current (1 µA typ) and narrower temp range (-40°C to +70°C)Preferred for speed-critical designs where industrial temp is not requiredSelect if system clock exceeds 15 MHz and ambient stays below +70°C
AS6C1008-55PCNSame 55 ns access and -40°C to +85°C rating, but uses 32-pin SOJ package and has 1.5 µA standby currentSuitable where SOJ socketing or legacy board reuse is mandatoryChoose only when mechanical compatibility with existing SOJ footprints is essential

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the R1LP0108ESA-5SI#B1 delivers the lowest standby current (0.6 µA) within its industrial temperature class and uses the space-efficient sTSOP-32 package - making it optimal for battery-sensitive, thermally constrained, and area-limited embedded systems.

Availability

R1LP0108ESA-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for R1LP0108ESA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-operated, and battery-backup memory applications where simplicity, reliability, and extended data retention are critical - targeting industrial control, medical instrumentation, and transportation electronics.

FAQ

What is the maximum operating frequency supported by R1LP0108ESA-5SI#B1?

The R1LP0108ESA-5SI#B1 does not operate on a clock signal - it is an asynchronous SRAM. Its 55 ns access time supports reliable interfacing with microcontrollers running up to ~12 MHz bus frequencies without wait states. Timing is governed by tAA, tOE, and tRC parameters, not a system clock.

Does R1LP0108ESA-5SI#B1 require external refresh circuitry?

No, the R1LP0108ESA-5SI#B1 is a true static RAM and requires no refresh cycles. Its internal latching circuitry retains data indefinitely as long as power is applied and CS1#/CS2 are held inactive - eliminating CPU overhead and timing-critical refresh management.

Can R1LP0108ESA-5SI#B1 retain data during main power loss?

Yes, the R1LP0108ESA-5SI#B1 supports data retention down to 2.0 V VCC. When configured in CS2-controlled mode (0 V ≤ CS2 ≤ 0.2 V) or CS1#-controlled mode (CS1# ≥ Vcc − 0.2 V), it maintains stored data during brown-out or backup battery operation, enabling robust fault logging and state recovery.

What is the function of the NC pin on R1LP0108ESA-5SI#B1?

Pin 1 of the R1LP0108ESA-5SI#B1 is marked NC (No Connect) and is internally unconnected. It must be left floating - neither tied to Vcc nor grounded - to avoid unintended electrical coupling or package stress. This pin serves no functional role in memory operation or timing.

How does the dual chip select (CS1# and CS2) simplify memory expansion with R1LP0108ESA-5SI#B1?

The R1LP0108ESA-5SI#B1 uses CS1# and CS2 in complementary logic: CS1# must be low and CS2 high for active operation. This allows hierarchical decoding - e.g., using A17 to drive CS2 of one device and inverted A17 to drive CS2 of another - enabling seamless 2-Mb expansion with identical timing behavior across both devices.

R1LP0108ESA-5SI#B1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.465", 11.80mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LP0108ESA-5SI#B1 FAQ

1.How can I place an order for R1LP0108ESA-5SI#B1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESA-5SI#B1 reliable?

The price and inventory of R1LP0108ESA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESA-5SI#B1 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESA-5SI#B1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESA-5SI#B1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESA-5SI#B1?

R1LP0108ESA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESA-5SI#B1?

For technical support, including R1LP0108ESA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESA-5SI#B1 requirements.

6.How does Aetrix verify that R1LP0108ESA-5SI#B1 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESA-5SI#B1 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESA-5SI#B1?

All R1LP0108ESA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESA-5SI#B1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESA-5SI#B1 part is unused and in its original packaging.

Return procedure for R1LP0108ESA-5SI#B1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LP0108ESA-5SI#B1 Tags

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