My Inquiry
My Account
Renesas R1LP0108ESA-5SI#S1
- Part No.:
- R1LP0108ESA-5SI#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LP0108ESA-5SI#S1.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,999
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LP0108ESA-5SI#S1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, -40°C to +85°C industrial temperature range, and 4.5–5.5 V single-supply operation. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion in embedded controllers and battery-backed systems.
For engineers reviewing the R1LP0108ESA-5SI#S1 datasheet, R1LP0108ESA-5SI#S1 pinout, R1LP0108ESA-5SI#S1 application, or R1LP0108ESA-5SI#S1 equivalent, key selection criteria include standby current (0.6 µA typical at 5.0 V), data retention down to 2.0 V, three-state outputs with OR-tie capability, and sTSOP-32 package compatibility with space-constrained industrial designs.
Technical Context
The R1LP0108ESA-5SI#S1 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, eliminating clocking and refresh circuitry. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external logic.
Read and write operations are controlled by independent OE# (output enable) and WE# (write enable) signals, with guaranteed timing margins: tOE = 30 ns max, tWP = 45 ns min, and tOHZ = 25 ns max for high-Z transition. Data retention mode activates when CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V, sustaining data at Vcc as low as 2.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1 Mb (131,072 × 8-bit) - supports byte-wide data buses without width conversion logic |
| Access time | 55 ns - enables direct interface with 12–15 MHz microcontrollers without wait states |
| Supply voltage | 4.5–5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation variation |
| Standby current | 0.6 µA typical at 25°C - extends battery life in backup-memory applications beyond 10 years |
| Data retention VCC | 2.0 V minimum - maintains stored data during brown-out or backup-battery operation |
| Operating temperature | -40°C to +85°C - qualified for industrial control, metering, and automotive body electronics |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifting requirements with legacy 5 V MCUs |
Pinout & Package
Package: 8 mm × 13.4 mm 32-pin plastic sTSOP (normal-bend type), PTSA0032KB-A footprint, tray or embossed tape delivery.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131,072-word addressing; A16 is MSB |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state output drivers and OR-tie capability |
| CS1# | Chip select 1 | Active-low primary enable; must be low with CS2 high for read/write access |
| CS2 | Chip select 2 | Active-high secondary enable; controls address buffer and retention mode activation |
| WE# | Write enable | Active-low signal initiating write cycle; latches data on falling edge when CS1# and CS2 enabled |
| OE# | Output enable | Active-low control for output drivers; prevents bus contention during shared-memory arbitration |
| Vcc | Power supply | +4.5 to +5.5 V supply pin; decoupling required within 10 mm of pin |
| Vss | Ground | Reference ground for all I/O and internal logic; separate return path recommended |
| NC | No connection | Pin 1 (sTSOP top-left corner) is unconnected; must remain floating per design |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead in MCU-based systems |
| Low standby current (0.6 µA) | Reduces quiescent power in always-on backup memory nodes, e.g., real-time clock registers |
| Dual chip select (CS1#, CS2) | Enables daisy-chained or banked memory expansion up to 4 devices without address decoder ICs |
| Three-state outputs with OR-tie | Supports wired-OR bus architectures (e.g., interrupt lines) without external pull-ups or diodes |
| Data retention at 2.0 V | Preserves memory contents during main power loss while backup battery sustains only minimal Vcc |
Applications
| Industrial Programmable Logic Controller (PLC) | Smart Electricity Meter |
|---|---|
Use Scenario: Non-volatile data logging of energy consumption, tariff schedules, and event timestamps during mains outage. IC Role / Device Role / Timing Role: Battery-backed SRAM storing critical metering registers and firmware configuration. Use Value: Maintains 1 Mb of usage history with 0.6 µA standby draw, enabling >10-year battery life on CR2032 cells. |
Use Scenario: Secure storage of cryptographic keys, billing data, and tamper logs in ANSI C12.19-compliant meters. IC Role / Device Role / Timing Role: Tamper-resilient memory holding encrypted parameters accessible only during authenticated sessions. Use Value: Data retention at 2.0 V ensures integrity during brown-out events; -40°C to +85°C rating guarantees field reliability. |
| Medical Infusion Pump Controller | Automotive Body Control Module (BCM) |
Use Scenario: Storing therapy profiles, dose history, and calibration coefficients with fail-safe persistence. IC Role / Device Role / Timing Role: Safety-critical SRAM retaining treatment parameters across power cycles and battery swaps. Use Value: 55 ns access time allows real-time parameter lookup during infusion delivery; no refresh avoids timing jitter. |
Use Scenario: Caching door lock status, lighting sequences, and diagnostic trouble codes in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: High-reliability memory interfacing directly with 5 V CAN/LIN microcontrollers. Use Value: TTL compatibility eliminates level shifters; sTSOP-32 footprint fits compact BCM PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-55ZSXIT | 512k × 8-bit (512 Kb), 55 ns, 2.2–5.5 V supply, 25 µA standby (typical) | Lower density and higher standby current; supports wider voltage range including 3.3 V | Select when 512 Kb capacity suffices and mixed-voltage system integration is required |
| AS6C1008-55TIN | 128k × 8-bit (1 Mb), 55 ns, 4.5–5.5 V, 1 µA standby (typical), SOJ-32 package | Same density and speed but SOJ-32 instead of sTSOP-32; slightly higher standby current | Choose when board layout uses SOJ footprints or requires RoHS-compliant lead-free finish only |
Compared with R1LP0108ESA-5SI#S1, CY62128EV30LL-55ZSXIT offers broader voltage flexibility but halves memory capacity and increases standby draw tenfold; AS6C1008-55TIN matches density and speed but trades sTSOP for SOJ packaging and lacks Renesas' industrial temp-certified retention behavior below 2.5 V.
Availability
R1LP0108ESA-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLCs, smart electricity meters, medical infusion pumps, automotive body control modules, and battery-backed data loggers requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for R1LP0108ESA-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP0108E Series was designed as an advanced LPSRAM family targeting battery-operated and low-power embedded systems where simplicity, reliability, and data retention under brown-out conditions are critical.
FAQ
What is the maximum operating frequency supported by R1LP0108ESA-5SI#S1?
R1LP0108ESA-5SI#S1 does not operate on a clock signal-it is a static RAM with asynchronous timing. Its 55 ns access time supports reliable interfacing with microcontrollers running at up to ~12 MHz bus frequency without wait states. The device has no internal clock generator or frequency rating; timing is governed solely by tRC (55 ns read cycle time) and tWC (55 ns write cycle time) as defined in the AC characteristics table.
Does R1LP0108ESA-5SI#S1 require a refresh circuit?
No, R1LP0108ESA-5SI#S1 is a true static RAM and requires no refresh circuitry. Its 0.15 µm CMOS cell design retains data indefinitely as long as power is applied and control signals meet valid timing-eliminating refresh overhead, associated power spikes, and timing constraints found in DRAM or pseudo-SRAM devices.
What is the significance of the "SI" suffix in R1LP0108ESA-5SI#S1?
The "SI" suffix in R1LP0108ESA-5SI#S1 denotes the industrial temperature grade (-40°C to +85°C), distinguishing it from the commercial "SR" variant (0°C to +70°C). This qualification ensures guaranteed performance-including access time, standby current, and data retention-across the full industrial ambient range, making it suitable for deployment in harsh environments like factory floors or outdoor utility meters.
Can R1LP0108ESA-5SI#S1 retain data when Vcc drops below 4.5 V?
Yes, R1LP0108ESA-5SI#S1 supports data retention down to Vcc = 2.0 V, provided either CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V. In this mode, ICCDR is 0.6 µA typical at 25°C, enabling multi-year retention on small backup batteries. Full read/write functionality resumes only when Vcc returns to 4.5–5.5 V with valid control signal levels.
Is R1LP0108ESA-5SI#S1 pin-compatible with other devices in the R1LP0108E Series?
Yes, all R1LP0108E Series variants-including R1LP0108ESA-5SI#S1, R1LP0108ESA-5SR#S*, and R1LP0108ESF-5SI#B*-share identical 32-pin sTSOP, TSOP, and SOP pinouts and signal assignments. Differences are limited to access time (55 ns vs. 70 ns), temperature grade (SI vs. SR), and packaging (tape vs. tray), allowing drop-in replacement within the same package type.
R1LP0108ESA-5SI#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LP0108ESA-5SI#S1 FAQ
1.How can I place an order for R1LP0108ESA-5SI#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP0108ESA-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP0108ESA-5SI#S1 reliable?
The price and inventory of R1LP0108ESA-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESA-5SI#S1 is usually 5 days.
3.What payment methods are accepted for R1LP0108ESA-5SI#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESA-5SI#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP0108ESA-5SI#S1?
R1LP0108ESA-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP0108ESA-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP0108ESA-5SI#S1?
For technical support, including R1LP0108ESA-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESA-5SI#S1 requirements.
6.How does Aetrix verify that R1LP0108ESA-5SI#S1 is sourced from the original manufacturer or authorized distributors?
All R1LP0108ESA-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESA-5SI#S1 meets industry standards.
7.What is the process for return or replacement of R1LP0108ESA-5SI#S1?
All R1LP0108ESA-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESA-5SI#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP0108ESA-5SI#S1 part is unused and in its original packaging.
Return procedure for R1LP0108ESA-5SI#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LP0108ESA-5SI#S1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
