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Renesas R1LP0108ESA-7SI#B0

Part No.:
R1LP0108ESA-7SI#B0
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.465", 11.80mm Width)
Datasheet:
AetrixR1LP0108ESA-7SI#B0.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,561

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Product details

Overview

R1LP0108ESA-7SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 70 ns access time, -40°C to +85°C industrial temperature range, and 4.5–5.5 V single-supply operation. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion in embedded controllers and battery-backed systems.

For engineers reviewing the R1LP0108ESA-7SI#B0 datasheet, R1LP0108ESA-7SI#B0 pinout, R1LP0108ESA-7SI#B0 application, or R1LP0108ESA-7SI#B0 equivalent, key selection criteria include standby current (0.6 µA typical at 5.0 V), data retention down to 2.0 V, three-state outputs with OR-tie capability, and sTSOP-32 packaging for space-constrained industrial designs.

Technical Context

The R1LP0108ESA-7SI#B0 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, eliminating clock and refresh circuitry. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external logic.

It supports asynchronous read/write cycles with guaranteed timing across industrial temperature: tAA ≤ 70 ns, tWC ≤ 70 ns, and tOE ≤ 35 ns. Data retention mode activates when CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V with CS2 ≥ Vcc−0.2 V, sustaining data at Vcc as low as 2.0 V while drawing only 0.6 µA typical current at 25°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 Mb (131,072 words × 8 bits) - provides byte-wide data path compatible with 8-bit microcontrollers and legacy peripherals.
Access Time70 ns - ensures compatibility with 14 MHz bus clocks and meets timing margins for industrial PLCs and instrumentation.
Supply Voltage4.5–5.5 V - supports standard 5 V rail operation with ±10% tolerance, eliminating need for dedicated LDO regulation.
Standby Current0.6 µA typical at 5.0 V, 25°C - enables multi-year battery backup in real-time clock and configuration memory applications.
Data Retention Voltage2.0 V minimum - allows reliable data hold during brown-out conditions or primary power loss in safety-critical systems.
Operating Temperature-40°C to +85°C - qualified for industrial environments including factory automation, motor drives, and outdoor metering.
I/O CompatibilityTTL - interfaces directly with legacy 5 V logic families without level-shifting components.

Pinout & Package

Package: 32-pin plastic sTSOP (8 mm × 13.4 mm, normal-bend type, code PTSA0032KB-A).

Pin/Terminal Circuit Role Design Meaning
A0–A16Address Input17-bit address bus supporting full 131,072-word addressing; A16 is MSB for 1 Mb density.
DQ0–DQ7Data I/OBi-directional 8-bit data bus with three-state output control via OE# and chip select states.
CS1#Chip Select 1Active-low primary enable; must be low with CS2 high for valid read/write operations.
CS2Chip Select 2Active-high secondary enable; used with CS1# for hierarchical decoding and memory banking.
WE#Write EnableActive-low write strobe; initiates write cycle when CS1# = L, CS2 = H, WE# = L.
OE#Output EnableActive-low control for output buffer; prevents bus contention during shared-data-bus operation.
VccPower Supply+4.5 V to +5.5 V supply input; decoupling required per JEDEC guidelines for noise immunity.
VssGroundReference ground terminal; requires low-impedance connection to system GND plane.
NCNo ConnectPin 1 (top-left corner of sTSOP) is unconnected; must remain floating per design specification.

Key Features

Feature Design Value
No refresh requiredEliminates external refresh controller and associated timing overhead-reduces firmware complexity and BOM count.
OR-tie capable outputsThree-state DQ lines allow direct wire-OR connection of multiple devices on same data bus without external logic.
Dual chip select (CS1#, CS2)Enables 2-level memory decoding for up to four R1LP0108E devices on one bus without address demultiplexers.
Battery backup supportValid data retention at Vcc = 2.0 V with ISB1 = 0.6 µA typical-extends backup battery life beyond 10 years in low-duty-cycle systems.
TTL-compatible signalingVIH = 2.2 V min, VIL = 0.8 V max-ensures interoperability with legacy 5 V microcontrollers, FPGAs, and ASICs.

Applications

Industrial PLC Memory Medical Device Configuration Storage

Use Scenario: Storing ladder logic program data and I/O state history in programmable logic controllers operating in factory environments with wide temperature swings and EMI exposure.

IC Role / Device Role / Timing Role: Non-volatile configuration and runtime scratchpad memory interfaced directly to 8-bit microcontroller address/data bus.

Use Value: 70 ns access time meets scan-cycle timing budgets; -40°C to +85°C rating ensures reliability across unconditioned control cabinets; 0.6 µA standby enables long-term logging during power loss.

Use Scenario: Holding calibration coefficients, patient settings, and device identity in portable diagnostic equipment requiring FDA-compliant data integrity during battery-only operation.

IC Role / Device Role / Timing Role: Battery-backed SRAM for critical parameter storage, isolated from main power domain via discrete power-switching circuitry.

Use Value: 2.0 V data retention threshold aligns with lithium coin-cell discharge profile; sTSOP-32 footprint minimizes PCB area in handheld enclosures; TTL compatibility avoids level-shifter components.

Smart Energy Meter Firmware Cache Automotive Body Control Module EEPROM Emulation

Use Scenario: Caching firmware update payloads and tariff tables in ANSI C12.22-compliant electricity meters deployed outdoors with seasonal ambient extremes.

IC Role / Device Role / Timing Role: High-reliability intermediate storage between flash memory and real-time execution engine, accessed via burst reads.

Use Value: 70 ns tAA supports fast firmware decompression; industrial temp grade withstands enclosure temperatures up to +85°C; no refresh eliminates periodic bus arbitration delays.

Use Scenario: Emulating EEPROM functionality for seat position, mirror angle, and lighting preferences in automotive body control modules where flash endurance is insufficient.

IC Role / Device Role / Timing Role: Byte-addressable, fast-write SRAM used with wear-leveling firmware to extend effective write cycles beyond flash limits.

Use Value: Write cycle time tWC ≤ 70 ns enables sub-millisecond parameter updates; CS1#/CS2 decoding simplifies integration into existing CAN/LIN microcontroller memory maps; sTSOP package fits tight under-hood layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV1024-70TQLISame density (1 Mb × 8), 70 ns access, but uses 32-pin TSOP-II (wider 20 mm body vs. sTSOP's 13.4 mm); higher ISB = 2 µA typical.Preferred where board layout accommodates larger footprint and higher standby current is acceptable.Select IS61LV1024-70TQLI only if sTSOP height constraint is relaxed and Renesas supply continuity is unavailable.
AS6C1008-70SCN70 ns access, -40°C to +85°C, but 32-pin SOP (525-mil) package; lower Vcc range (2.7–3.6 V) - incompatible with 5 V systems.Suitable only for new 3.3 V designs; not drop-in replaceable due to voltage and package mismatch.Choose AS6C1008-70SCN only for greenfield 3.3 V platforms; avoid for 5 V legacy upgrades or R1LP0108ESA-7SI#B0 replacements.

Compared with IS61LV1024-70TQLI and AS6C1008-70SCN, the R1LP0108ESA-7SI#B0 delivers superior space efficiency via sTSOP-32, lowest industrial-grade standby current (0.6 µA), and native 5 V compatibility-making it optimal for retrofit, battery-backed, and thermally demanding applications where board area and power are constrained.

Availability

R1LP0108ESA-7SI#B0 is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, smart metering, and automotive body electronics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for R1LP0108ESA-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-backed memory applications in industrial and medical equipment where reliability, simplicity, and long-term data retention are critical.

FAQ

What is the maximum operating frequency supported by the R1LP0108ESA-7SI#B0?

The R1LP0108ESA-7SI#B0 does not operate on a clock signal-it is an asynchronous static RAM. Its 70 ns access time corresponds to a maximum effective bus frequency of approximately 14 MHz for continuous random-access patterns. System timing must comply with tRC ≥ 70 ns, tAA ≤ 70 ns, and tOE ≤ 35 ns as specified in the AC characteristics table. The R1LP0108ESA-7SI#B0 requires no clock generation or synchronization circuitry.

Does the R1LP0108ESA-7SI#B0 support true data retention during complete power loss?

Yes-the R1LP0108ESA-7SI#B0 maintains stored data when Vcc drops to as low as 2.0 V, provided either CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V with CS2 ≥ Vcc−0.2 V. In this mode, standby current is 0.6 µA typical at 25°C, enabling multi-year retention on a single CR2032 coin cell. Full power loss (Vcc = 0 V) results in immediate data loss, as with all volatile SRAMs. The R1LP0108ESA-7SI#B0 is not non-volatile memory.

Can the R1LP0108ESA-7SI#B0 be used with a 3.3 V microcontroller interface?

No-the R1LP0108ESA-7SI#B0 requires a 4.5–5.5 V supply and is TTL-compatible, meaning its VIH minimum is 2.2 V and VIL maximum is 0.8 V. Direct connection to a 3.3 V microcontroller violates input voltage specifications and risks unreliable operation or damage. Level translation (e.g., TXB0108 or discrete MOSFET buffers) is mandatory. The R1LP0108ESA-7SI#B0 is not 3.3 V tolerant.

How many address lines does the R1LP0108ESA-7SI#B0 require?

The R1LP0108ESA-7SI#B0 requires 17 address lines (A0 through A16) to access its full 131,072-word (128k) × 8-bit memory array. A16 is the most significant bit. All 17 inputs must be driven with valid logic levels during address setup; floating address lines will cause undefined memory location access. The R1LP0108ESA-7SI#B0 has no internal address multiplexing or row/column splitting.

Is the R1LP0108ESA-7SI#B0 RoHS compliant and lead-free?

Yes-the R1LP0108ESA-7SI#B0 is RoHS compliant and lead-free, as confirmed by Renesas Electronics' environmental compliance documentation (refer to "R10DS0151EJ0100" revision 1.00, page 12). The sTSOP package uses lead-free matte tin plating, and the device meets EU Directive 2011/65/EU requirements. No exemptions apply, and the material declaration is publicly available on Renesas' website.

R1LP0108ESA-7SI#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.465", 11.80mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LP0108ESA-7SI#B0 FAQ

1.How can I place an order for R1LP0108ESA-7SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESA-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESA-7SI#B0 reliable?

The price and inventory of R1LP0108ESA-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESA-7SI#B0 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESA-7SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESA-7SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESA-7SI#B0?

R1LP0108ESA-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESA-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESA-7SI#B0?

For technical support, including R1LP0108ESA-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESA-7SI#B0 requirements.

6.How does Aetrix verify that R1LP0108ESA-7SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESA-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESA-7SI#B0 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESA-7SI#B0?

All R1LP0108ESA-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESA-7SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESA-7SI#B0 part is unused and in its original packaging.

Return procedure for R1LP0108ESA-7SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LP0108ESA-7SI#B0 Tags

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