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Renesas R1LP0108ESF-5SI#B1

Part No.:
R1LP0108ESF-5SI#B1
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixR1LP0108ESF-5SI#B1.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:590

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Product details

Overview

R1LP0108ESF-5SI#B1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and -40°C to +85°C industrial temperature range. Packaged in 32-pin TSOP (8mm × 20mm), it supports battery-backed memory systems requiring no refresh, TTL-compatible interfacing, and ultra-low standby current of 0.6 µA at 5.0 V.

For engineers reviewing the R1LP0108ESF-5SI#B1 datasheet, R1LP0108ESF-5SI#B1 pinout, R1LP0108ESF-5SI#B1 application, or R1LP0108ESF-5SI#B1 equivalent, key selection considerations include its 55 ns read/write timing, dual chip select architecture for memory expansion, three-state I/O with OR-tie capability, and data retention down to 2.0 V.

Technical Context

The R1LP0108ESF-5SI#B1 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS/TFT process, eliminating clocking and refresh circuitry. Its address decoding uses separate row/column decoders with integrated sense/write amplifiers and clock generator logic for asynchronous operation.

It features two independent chip selects (CS1# active-low, CS2 active-high) enabling hierarchical memory mapping, plus OE# and WE# controls for precise bus contention management and write gating. All inputs/outputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) across the full industrial temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 131,072 × 8-bit (1 Mb); enables byte-wide data path without external multiplexing
Access time 55 ns max; guarantees deterministic read latency for real-time control loops
Supply voltage 4.5–5.5 V; compatible with standard 5 V logic rails and tolerant of ±10% regulation variation
Standby current 0.6 µA typical at 5.0 V / 25°C; supports multi-year battery backup in portable instrumentation
Data retention voltage 2.0 V min; maintains stored contents during brown-out or backup power switchover
Operating temperature -40°C to +85°C; qualified for industrial-grade embedded systems without derating
Input/output compatibility TTL-level; interfaces directly with legacy microcontrollers and FPGAs without level-shifting

Pinout & Package

Package: 32-pin plastic TSOP (normal-bend type), 8 mm × 20 mm footprint (package code PTSA0032KA-A), surface-mount compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address input 17-bit address bus supporting full 128k-word decoding; A16 enables 1-Mb addressing
DQ0–DQ7 Data I/O Bi-directional 8-bit data bus with three-state outputs; supports OR-tie for shared bus architectures
CS1# Chip select 1 Active-low primary enable; must be low with CS2 high for valid memory access
CS2 Chip select 2 Active-high secondary enable; used with CS1# for hierarchical memory banking
WE# Write enable Active-low write strobe; initiates write cycle when CS1# = L, CS2 = H, WE# = L
OE# Output enable Active-low read gate; prevents bus contention by disabling outputs when high
Vcc Power supply +4.5 to +5.5 V main supply; powers core logic and I/O buffers
Vss Ground Reference return for all signals and internal circuitry
NC No connection Pin 1 (SOP/TSOP/sTSOP) is unconnected; must remain floating or grounded per layout guidelines

Key Features

Feature Design Value
No clocks, no refresh Eliminates external timing circuitry and firmware overhead for memory maintenance
Low standby current (0.6 µA) Extends battery life in always-on monitoring devices such as smart meters and remote sensors
Dual chip select (CS1#, CS2) Enables seamless expansion beyond 1 Mb using multiple devices without address decoder logic
Three-state outputs with OR-tie capability Allows direct connection of multiple SRAMs to a common data bus without external bus transceivers
TTL-compatible I/O Interoperates with legacy 5 V microcontrollers (e.g., 8051, PIC18), CPLDs, and ASICs

Applications

Industrial Data Logger Medical Patient Monitor

Use Scenario: Continuous acquisition of ECG, SpO₂, and respiration waveforms at 1 kHz sampling rate with local buffering before wireless upload.

IC Role / Device Role / Timing Role: Primary non-refreshing data buffer storing up to 128 seconds of raw waveform data; operates in battery-backup mode during AC loss.

Use Value: 0.6 µA standby current extends backup runtime to >72 hours on coin cell; 55 ns access supports real-time waveform display rendering.

Use Scenario: Embedded controller in portable ultrasound probe storing frame buffers and calibration tables during intermittent scanning.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for burst-mode image capture and processing pipeline staging.

Use Value: TTL compatibility eliminates level shifters in space-constrained probe PCB; -40°C to +85°C rating ensures reliability in clinical environments.

Smart Energy Meter Programmable Logic Controller (PLC) I/O Module

Use Scenario: Tamper-resistant meter logging kWh consumption, voltage sags, and event timestamps over 10+ years with lithium backup.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical billing data during power failure; retains content at 2.0 V Vcc.

Use Value: Data retention down to 2.0 V enables safe storage during brown-out conditions; industrial temp grade supports outdoor transformer-mounted enclosures.

Use Scenario: Distributed I/O module capturing sensor inputs and actuator commands in factory automation with deterministic scan cycles.

IC Role / Device Role / Timing Role: Local scratchpad memory for cyclic process data exchange between CPU and fieldbus interface ASIC.

Use Value: Dual chip select simplifies memory mapping in modular backplane designs; 55 ns access meets sub-100 µs I/O update deadlines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62128EV30LL-55ZSXIT 512k × 8-bit (512 Kb), 55 ns access, 3.3 V only, 32-pin TSOP Half capacity; requires voltage translation for 5 V systems; lower standby current (1 µA @ 3.3 V) Select if system uses 3.3 V logic and <512 kB memory suffices; not drop-in for 5 V or 1 Mb needs.
IS61LV10248AL-10TLI 128k × 8-bit (1 Mb), 10 ns access, 3.3 V only, 32-pin TSOP Faster but incompatible supply; higher ICC1 (45 mA typ); narrower temp range (-40°C to +85°C same) Choose for 3.3 V systems needing faster access; requires redesign for Vcc and timing margins.

Compared with R1LP0108ESF-5SI#B1, CY62128EV30LL-55ZSXIT offers lower voltage operation but half the density, while IS61LV10248AL-10TLI delivers speed at the cost of 3.3 V exclusivity - neither matches the R1LP0108ESF-5SI#B1's combination of 5 V tolerance, 1 Mb capacity, industrial temp, and ultra-low standby in a pin-compatible TSOP package.

Availability

R1LP0108ESF-5SI#B1 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, smart energy meters, programmable logic controller I/O modules, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.

Supply support for R1LP0108ESF-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LP0108E Series was designed specifically for low-power, battery-operated memory applications demanding simplicity, reliability, and long-term data retention - targeting portable instrumentation, industrial controllers, and medical devices.

FAQ

What is the maximum operating frequency supported by R1LP0108ESF-5SI#B1?

R1LP0108ESF-5SI#B1 is an asynchronous static RAM with no internal clock; its performance is defined by access time, not frequency. With a 55 ns read cycle time (tRC), it supports effective throughput up to ~18 MHz in burst-read configurations. The device does not require clocking, making it suitable for systems where timing predictability matters more than raw bandwidth. R1LP0108ESF-5SI#B1 operates reliably under worst-case conditions across its full -40°C to +85°C range.

Does R1LP0108ESF-5SI#B1 support data retention during power loss?

Yes, R1LP0108ESF-5SI#B1 supports data retention down to 2.0 V Vcc when placed in standby via CS2 ≤ 0.2 V or CS1# ≥ Vcc − 0.2 V. At 3.0 V and 25°C, typical data retention current is 0.6 µA, enabling multi-year backup on small lithium batteries. Retention is guaranteed across the full industrial temperature range, with leakage rising to 10 µA at +85°C. R1LP0108ESF-5SI#B1 requires no external circuitry to enter or maintain this mode.

Can R1LP0108ESF-5SI#B1 be used with 3.3 V logic systems?

No, R1LP0108ESF-5SI#B1 is specified only for 4.5–5.5 V operation and TTL-compatible signaling (VIH ≥ 2.2 V, VIL ≤ 0.8 V). It is not 3.3 V tolerant: applying 3.3 V to Vcc violates the minimum 4.5 V supply requirement and risks functional failure or accelerated wear. For 3.3 V systems, consider alternatives like IS61LV10248AL-10TLI - but note R1LP0108ESF-5SI#B1 itself must operate at 5 V.

How many address lines does R1LP0108ESF-5SI#B1 require?

R1LP0108ESF-5SI#B1 requires 17 address lines (A0–A16) to decode its full 131,072-word (128k) memory space. This is confirmed in the pin description and block diagram. The device organizes memory as 128k × 8-bit, so A16 is necessary to access the upper half of the address map. Using fewer than 17 lines will limit accessible memory and may cause aliasing or incomplete addressing of the R1LP0108ESF-5SI#B1 array.

Is R1LP0108ESF-5SI#B1 RoHS compliant?

Yes, R1LP0108ESF-5SI#B1 is RoHS compliant per Renesas' environmental documentation and packaging markings. The device uses lead-free terminations and complies with EU Directive 2011/65/EU, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Compliance is verified through material declarations and third-party testing; full documentation is available via Renesas' product change notifications and environmental reports for the R1LP0108E Series. R1LP0108ESF-5SI#B1 meets JEDEC J-STD-609A Class 3 marking requirements.

R1LP0108ESF-5SI#B1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LP0108ESF-5SI#B1 FAQ

1.How can I place an order for R1LP0108ESF-5SI#B1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESF-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESF-5SI#B1 reliable?

The price and inventory of R1LP0108ESF-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESF-5SI#B1 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESF-5SI#B1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESF-5SI#B1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESF-5SI#B1?

R1LP0108ESF-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESF-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESF-5SI#B1?

For technical support, including R1LP0108ESF-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESF-5SI#B1 requirements.

6.How does Aetrix verify that R1LP0108ESF-5SI#B1 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESF-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESF-5SI#B1 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESF-5SI#B1?

All R1LP0108ESF-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESF-5SI#B1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESF-5SI#B1 part is unused and in its original packaging.

Return procedure for R1LP0108ESF-5SI#B1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LP0108ESF-5SI#B1 Tags

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