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Renesas R1LP0108ESF-5SR#S0

Part No.:
R1LP0108ESF-5SR#S0
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixR1LP0108ESF-5SR#S0.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,481

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Product details

Overview

R1LP0108ESF-5SR#S0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and 0.6 µA typical standby current at 5.0 V. It operates across 0 to +70°C and is packaged in a 32-pin TSOP (8 mm × 20 mm, normal-bend type), designed for battery-backed memory systems requiring zero-refresh operation and TTL-compatible interfacing.

For engineers reviewing the R1LP0108ESF-5SR#S0 datasheet, R1LP0108ESF-5SR#S0 pinout, R1LP0108ESF-5SR#S0 application, or R1LP0108ESF-5SR#S0 equivalent, this device serves as a drop-in replacement for legacy 1M×8 SRAMs in embedded controllers, industrial HMIs, and portable instrumentation where data retention at low VCC and minimal power draw are critical selection criteria.

Technical Context

The R1LP0108ESF-5SR#S0 implements a fully static memory array with no internal clocks or refresh circuitry, relying on CMOS latch-based cells fabricated in 0.15 µm technology. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables seamless memory expansion without external decoding logic.

All address (A0–A16), data (DQ0–DQ7), and control inputs (WE#, OE#, CS1#, CS2) are TTL-compatible, supporting direct interfacing with legacy microcontrollers and FPGAs. Standby mode is entered either by asserting CS2 low or by holding CS1# high while CS2 remains high, enabling two independent low-power entry paths.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density1 Mb (131,072 words × 8 bits) - supports 128 KB of byte-addressable storage without bank switching
Access time55 ns - guarantees full-speed read/write cycles at up to ~18 MHz system bus rates
Supply voltage4.5–5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation variation
Standby current0.6 µA typical at 5.0 V/25°C - enables multi-year battery backup in always-on memory retention mode
Data retention VCC2.0 V minimum - retains stored data down to near-dead-battery voltage levels
Operating temperature0 to +70°C - qualified for commercial-grade industrial control and test equipment environments
Input/output compatibilityTTL - eliminates level-shifter requirements when interfacing with 5 V microcontrollers and CPLDs

Pinout & Package

Package: 32-pin plastic TSOP (8 mm × 20 mm, normal-bend type, package code PTSA0032KA-A).

Pin/Terminal Circuit Role Design Meaning
A0–A16Address input17-bit address bus supporting full 131,072-word addressing; no multiplexing required
DQ0–DQ7Bi-directional data I/OCommon data bus with three-state outputs; supports OR-tie for shared-bus configurations
CS1#Chip select 1 (active low)Primary enable; must be low with CS2 high for read/write access; high disables output and reduces current
CS2Chip select 2 (active high)Secondary enable; low forces standby regardless of CS1# state; enables dual-standby entry modes
WE#Write enable (active low)Controls write cycle timing; low during address-valid window initiates data latching into memory cell
OE#Output enable (active low)Gates output drivers; prevents bus contention when multiple devices share DQ lines
VccPower supply+4.5 to +5.5 V supply; decoupling capacitor required within 1 cm of pin per layout guidelines
VssGroundSignal and power ground reference; requires low-impedance connection to PCB ground plane
NCNo connectionPin 1 (NC) is unconnected internally; must remain floating or tied to ground per design rules

Key Features

Feature Design Value
No refresh requiredEliminates external refresh controller or timer overhead, reducing firmware complexity and BOM count
Dual standby entrySupports both CS2-low and CS1#-high/CS2-high modes, enabling flexible power management in multi-chip systems
OR-tie capable outputsAllows multiple R1LP0108ESF-5SR#S0 devices to drive same data bus without external wired-OR components
Low-voltage data retentionMaintains valid data at VCC ≥ 2.0 V, extending usable battery life in backup applications
Easy memory expansionCS1# and CS2 signals permit straightforward cascading of multiple 1Mb SRAMs into larger contiguous memory maps

Applications

Industrial HMI Memory Buffer Portable Test Equipment Data Log

Use Scenario: A factory-floor human-machine interface stores real-time sensor history and configuration settings between power cycles.

IC Role / Device Role / Timing Role: Non-volatile buffer memory holding 128 KB of operational logs and UI state using battery-backed retention.

Use Value: 0.6 µA standby current extends coin-cell life beyond 5 years; 55 ns access ensures responsive screen updates during live data display.

Use Scenario: Handheld multimeter captures timestamped voltage/current readings during field measurements without host PC connection.

IC Role / Device Role / Timing Role: Primary working memory for acquisition firmware, buffering up to 131k samples before USB upload.

Use Value: TTL compatibility simplifies interface to 8-bit MCU; no refresh requirement avoids timing-critical interrupt servicing during sampling.

Embedded Controller Program Cache Legacy Industrial PLC Data Table

Use Scenario: An aging programmable logic controller upgrades its instruction cache to support faster scan cycles without changing CPU.

IC Role / Device Role / Timing Role: External instruction cache mapped into microcontroller's external memory space via parallel bus.

Use Value: 55 ns tAA meets timing budget for 18 MHz bus clock; common DQ bus reduces trace count versus separate data/address buses.

Use Scenario: Retrofit of legacy automation hardware replaces obsolete SRAM with pin-compatible modern part to extend service life.

IC Role / Device Role / Timing Role: Direct replacement for discontinued 1M×8 SRAM in ladder-logic data table storage.

Use Value: Identical 32-pin TSOP footprint and TTL signaling ensure zero PCB modification; -5SR speed grade matches original timing spec.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power 1M×8 SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV10248AL-10TLI10 ns access time, 3.3 V supply only, 32-pin TSOPRequires level translation for 5 V systems; higher speed suits newer controllers but increases powerSelect only if migrating to 3.3 V architecture and needing sub-10 ns performance
AS6C1008-55PCN55 ns access, 4.5–5.5 V supply, 32-pin SOP (not TSOP), 3 mA max ISBLarger SOP package occupies more board area; standby current 5× higher than R1LP0108ESF-5SR#S0Choose when TSOP footprint unavailable and board space permits SOP; verify thermal derating at +70°C

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the R1LP0108ESF-5SR#S0 uniquely balances 5 V compatibility, ultra-low 0.6 µA standby, and TSOP-32 footprint-making it optimal for battery-constrained, drop-in legacy replacements where power and form factor dominate speed or voltage flexibility.

Availability

R1LP0108ESF-5SR#S0 is available at Aetrix Electronics and suitable for industrial HMIs, portable test equipment, and embedded controller program caches requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for R1LP0108ESF-5SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was developed to deliver low-power, high-reliability static RAM for battery-backed and space-constrained embedded systems where zero-refresh operation and extended data retention are mandatory.

FAQ

What is the maximum operating frequency supported by the R1LP0108ESF-5SR#S0?

The R1LP0108ESF-5SR#S0 has a 55 ns access time, which supports reliable operation at bus clock frequencies up to approximately 18 MHz under worst-case conditions. The actual maximum frequency depends on system-level timing margins including address setup/hold, OE# assertion delay, and PCB trace propagation. R1LP0108ESF-5SR#S0 does not require clock input-it is fully asynchronous-so timing is governed solely by external control signal edges and specified AC parameters like tRC and tAA.

Does the R1LP0108ESF-5SR#S0 support true data retention at 2.0 V?

Yes, the R1LP0108ESF-5SR#S0 guarantees data retention down to VCC = 2.0 V when placed in standby mode via CS2 ≤ 0.2 V or CS1# ≥ VCC − 0.2 V with CS2 ≥ VCC − 0.2 V. At 25°C and 3.0 V, typical data retention current is 0.6 µA. Retention current rises to 10 µA at +85°C, but data integrity remains assured across the full specified temperature range per the R10DS0151EJ0100 datasheet.

Can the R1LP0108ESF-5SR#S0 be used in place of older 1M×8 SRAMs with different pinouts?

No-the R1LP0108ESF-5SR#S0 uses a standardized 32-pin TSOP pinout defined in the R10DS0151EJ0100 datasheet (page 3), and is not pin-compatible with non-Renesas 1M×8 SRAMs such as the Cypress CY62167EV30 or ISSI IS61LV10248. Direct replacement is only valid for other members of the R1LP0108E family (e.g., R1LP0108ESF-5SI#S0) or explicitly documented cross-references. Always verify pin mapping and timing before substitution.

How does the dual chip select architecture (CS1# and CS2) function in the R1LP0108ESF-5SR#S0?

In the R1LP0108ESF-5SR#S0, CS1# (active low) and CS2 (active high) operate independently: read/write occurs only when CS1# = L and CS2 = H. Standby is entered if CS2 = L (regardless of CS1#), or if CS1# = H while CS2 = H. This dual-path standby enables flexible power sequencing-for example, holding CS2 low during deep sleep while keeping CS1# toggled for wake-up detection-without affecting data retention in the R1LP0108ESF-5SR#S0.

Is the R1LP0108ESF-5SR#S0 compliant with RoHS and lead-free assembly requirements?

Yes, the R1LP0108ESF-5SR#S0 is RoHS-compliant and lead-free, as confirmed in Renesas' official product documentation and packaging markings. It supports standard reflow profiles for lead-free soldering (per J-STD-020), with peak temperatures up to 260°C. The TSOP package uses matte tin terminations, and all materials meet EU Directive 2011/65/EU requirements. R1LP0108ESF-5SR#S0 is rated for "Standard" quality grade per Renesas' classification, suitable for industrial and commercial applications.

R1LP0108ESF-5SR#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LP0108ESF-5SR#S0 FAQ

1.How can I place an order for R1LP0108ESF-5SR#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESF-5SR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESF-5SR#S0 reliable?

The price and inventory of R1LP0108ESF-5SR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESF-5SR#S0 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESF-5SR#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESF-5SR#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESF-5SR#S0?

R1LP0108ESF-5SR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESF-5SR#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESF-5SR#S0?

For technical support, including R1LP0108ESF-5SR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESF-5SR#S0 requirements.

6.How does Aetrix verify that R1LP0108ESF-5SR#S0 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESF-5SR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESF-5SR#S0 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESF-5SR#S0?

All R1LP0108ESF-5SR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESF-5SR#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESF-5SR#S0 part is unused and in its original packaging.

Return procedure for R1LP0108ESF-5SR#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LP0108ESF-5SR#S0 Tags

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