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Renesas R1LP0108ESN-5SI#B0
- Part No.:
- R1LP0108ESN-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LP0108ESN-5SI#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,550
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Product details
Overview
R1LP0108ESN-5SI#B0 from Renesas Electronics is a 1Mb low-power static RAM organized as 131,072 × 8-bit, operating on a single 4.5–5.5V supply, with 55 ns access time and −40°C to +85°C industrial temperature range, housed in a 32-pin SOP package. It delivers 0.6 µA typical standby current, TTL-compatible I/O, and no-refresh operation for battery-backed memory systems in portable instrumentation and embedded controllers.
For engineers reviewing the R1LP0108ESN-5SI#B0 datasheet, R1LP0108ESN-5SI#B0 pinout, R1LP0108ESN-5SI#B0 application, or R1LP0108ESN-5SI#B0 equivalent, key selection considerations include industrial-temperature SRAM retention under low VCC, chip-select expansion capability via CS1# and CS2, and three-state OR-tie compatible outputs for bus sharing without external logic.
Technical Context
This device implements a fully static CMOS memory array with separate address buffer, row/column decoders, sense/write amplifiers, and clock generator-no external clocks or refresh cycles required. Its dual chip-select architecture (CS1# active-low, CS2 active-high) enables seamless memory banking and expansion in multi-chip configurations.
Input and output buffers are TTL-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V, and output enable (OE#) ensures bus contention avoidance during read cycles. Data retention is guaranteed down to 2.0 V with sub-µA current draw when placed in standby via CS2 low or CS1# high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1 Mb (131,072 × 8-bit) - supports byte-wide data paths without external multiplexing |
| Access time | 55 ns - enables direct interface with legacy microcontrollers running at ≤18 MHz bus clocks |
| Supply voltage | 4.5–5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation variation |
| Standby current | 0.6 µA typical at 5.0 V/25°C - extends battery life in always-on backup memory applications |
| Operating temperature | −40°C to +85°C - qualified for industrial environments including factory automation and outdoor telemetry |
| Data retention voltage | 2.0 V minimum - maintains stored data during brown-out or backup battery operation |
| I/O compatibility | TTL - eliminates level-shifting requirements when interfacing with 5 V MCUs and FPGAs |
Pinout & Package
Package: 32-pin plastic SOP (525-mil), JEDEC MS-012AC compliant, body size 13.4 mm × 22.2 mm, lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131k-word decoding; A16 is MSB |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state outputs; supports OR-tie for shared-bus architectures |
| CS1#, CS2 | Chip select | CS1# active-low and CS2 active-high enable hierarchical memory mapping and bank selection |
| WE#, OE# | Control inputs | WE# controls write strobe timing; OE# gates output drivers to prevent bus contention |
| Vcc, Vss | Power terminals | Single 5 V supply; no separate ground plane required for noise isolation |
| NC | No connection | Pin 1 (SOP top-left corner) is unconnected; must remain floating per design |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh circuitry and timing overhead-ideal for simple microcontroller-based systems |
| Low standby current | 0.6 µA typical enables >10-year battery backup using CR2032 cells in real-time clock modules |
| Common data I/O | Reduces PCB trace count by 50% vs. separate input/output buses-simplifies layout in space-constrained designs |
| OR-tie capability | Allows multiple R1LP0108ESN-5SI#B0 devices to share a single data bus without external wired-OR diodes |
| Easy memory expansion | CS1# and CS2 support daisy-chained or parallel banked configurations up to 4 MB with no glue logic |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing calibration coefficients and runtime state variables in programmable logic controllers exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical configuration data during power cycling and brown-out events. Use Value: 0.6 µA standby current and −40°C to +85°C operation ensure uninterrupted data retention across factory floor conditions without external supervision. | Use Scenario: Retaining patient-specific therapy settings and fault logs in portable infusion pumps powered by primary lithium batteries. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving volatile treatment parameters during AC power loss or battery replacement. Use Value: Guaranteed data retention down to 2.0 V allows continued operation through deep discharge phases, extending usable battery life by 18–22%. |
| Automotive Diagnostic Module | Smart Meter Firmware Cache |
Use Scenario: Caching OBD-II diagnostic trouble codes and sensor history in vehicle telematics units subject to engine bay thermal stress. IC Role / Device Role / Timing Role: High-reliability scratchpad memory buffering transient CAN message payloads before flash commit. Use Value: 55 ns access time supports real-time capture of burst CAN traffic at 500 kbps without packet loss or FIFO overflow. | Use Scenario: Accelerating firmware execution in utility smart meters by caching frequently accessed code segments from slow SPI flash. IC Role / Device Role / Timing Role: Instruction cache SRAM reducing average instruction fetch latency by 65% versus direct flash reads. Use Value: TTL-compatible I/O and zero-refresh operation eliminate timing constraints on meter MCU clock domain synchronization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns faster access (45 ns), 3.3 V only supply, 32-pin TSOP-II package | Requires 3.3 V rail and board redesign for package footprint; unsuitable for 5 V legacy systems | Select only if system already uses 3.3 V logic and needs higher speed; not drop-in compatible |
| AS6C1008-55ZIN | Same 55 ns speed and 5 V supply, but 44-pin SOJ package and 1.5 mA max standby current | Higher standby draw limits battery lifetime; SOJ footprint incompatible with SOP layout | Acceptable for mains-powered systems where pinout change is feasible; avoid for battery-critical designs |
Compared with R1LP0108ESN-5SI#B0, IS61LV10248AL-10TLI offers speed at the cost of voltage and package compatibility, while AS6C1008-55ZIN matches speed and voltage but sacrifices standby efficiency and requires PCB rework-making R1LP0108ESN-5SI#B0 optimal for industrial 5 V systems needing ultra-low-power retention.
Availability
R1LP0108ESN-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive diagnostic module applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LP0108ESN-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP0108E Series was designed as low-power, industrial-grade SRAM for battery-backed and energy-constrained embedded systems requiring reliable, no-refresh memory operation across harsh thermal environments.
FAQ
What is the maximum operating frequency supported by R1LP0108ESN-5SI#B0?
R1LP0108ESN-5SI#B0 does not operate on a clock signal-it is a static RAM with asynchronous timing. Its 55 ns access time supports bus cycle rates up to approximately 18 MHz in systems where address setup, hold, and enable timing align with this specification. The device requires no external clock, eliminating skew and jitter concerns in timing-critical control applications.
Does R1LP0108ESN-5SI#B0 require an external refresh controller?
No, R1LP0108ESN-5SI#B0 is a true static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cell retains data indefinitely as long as power is applied and valid control signals are maintained-making it ideal for simple, low-overhead memory interfaces in microcontroller-based designs.
Can R1LP0108ESN-5SI#B0 be used with a 3.3 V microcontroller interface?
R1LP0108ESN-5SI#B0 is specified for 4.5–5.5 V operation and TTL-compatible inputs (VIH ≥ 2.2 V). While some 3.3 V MCUs may meet the VIH threshold, Renesas does not guarantee functionality below 4.5 V. For robust 3.3 V interfacing, level translation or a native 3.3 V SRAM such as IS61LV10248AL-10TLI is recommended instead of R1LP0108ESN-5SI#B0.
What is the data retention capability of R1LP0108ESN-5SI#B0 during power loss?
R1LP0108ESN-5SI#B0 guarantees data retention down to 2.0 V supply voltage with standby current as low as 0.6 µA at 25°C. When placed in retention mode via CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V, it maintains stored contents for years on a coin-cell backup-verified across the full −40°C to +85°C industrial temperature range.
Is R1LP0108ESN-5SI#B0 RoHS compliant and halogen-free?
Yes, R1LP0108ESN-5SI#B0 complies with EU RoHS Directive 2011/65/EU and is halogen-free per Renesas' material declarations. The device uses lead-free matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) when shipped in original sealed packaging.
R1LP0108ESN-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LP0108ESN-5SI#B0 FAQ
1.How can I place an order for R1LP0108ESN-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP0108ESN-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP0108ESN-5SI#B0 reliable?
The price and inventory of R1LP0108ESN-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESN-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LP0108ESN-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESN-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP0108ESN-5SI#B0?
R1LP0108ESN-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP0108ESN-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP0108ESN-5SI#B0?
For technical support, including R1LP0108ESN-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESN-5SI#B0 requirements.
6.How does Aetrix verify that R1LP0108ESN-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LP0108ESN-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESN-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LP0108ESN-5SI#B0?
All R1LP0108ESN-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESN-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP0108ESN-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LP0108ESN-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LP0108ESN-5SI#B0 Tags
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