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Renesas R1LP0108ESN-5SI#B1

Part No.:
R1LP0108ESN-5SI#B1
Manufacturer:
Renesas
Category:
Memory
Package:
32-SOIC (0.450", 11.40mm Width)
Datasheet:
AetrixR1LP0108ESN-5SI#B1.pdf
Description:
IC SRAM 1MBIT PARALLEL 32SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:663

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Product details

Overview

R1LP0108ESN-5SI#B1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and -40°C to +85°C industrial temperature range. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion in embedded control and battery-backed systems.

For engineers reviewing the R1LP0108ESN-5SI#B1 datasheet, R1LP0108ESN-5SI#B1 pinout, R1LP0108ESN-5SI#B1 application, or R1LP0108ESN-5SI#B1 equivalent, key selection criteria include standby current (0.6 µA typical at 5.0 V), data retention down to 2.0 V, three-state outputs with OR-tie capability, and compatibility with legacy 32-pin SOP layouts in space-constrained industrial designs.

Technical Context

The R1LP0108ESN-5SI#B1 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, eliminating clocking and refresh circuitry. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external logic.

It supports true bidirectional common I/O (DQ0–DQ7) with independent OE# and WE# controls, and achieves data retention at Vcc as low as 2.0 V when placed in standby via CS2 ≤ 0.2 V or CS1# ≥ Vcc − 0.2 V. All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V).

Key Specifications

Parameter Value and Actual Design Meaning
Memory size1 Mb (131,072 × 8-bit): supports 128 KB of byte-addressable storage without refresh overhead.
Access time55 ns max: enables direct interface with 12–15 MHz microcontrollers without wait states.
Supply voltage4.5–5.5 V: compatible with standard 5 V logic rails and tolerant of ±10% regulation drift.
Standby current0.6 µA typical at 5.0 V / 25°C: extends battery life in backup-memory applications beyond 10 years.
Data retention Vcc2.0 V min: maintains stored data during brown-out or backup-battery operation.
Operating temperature-40°C to +85°C: qualified for industrial-grade deployment in motor drives, PLCs, and metering equipment.
I/O interfaceTTL-compatible inputs/outputs: eliminates level-shifting requirements when interfacing with legacy 5 V MCUs and peripherals.

Pinout & Package

Package: 32-pin 525-mil plastic SOP (PRSP0032DF-A), 1.27 mm pitch, surface-mount compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
A0–A16Address input17-bit address bus supporting full 131,072-word decoding; A16 is MSB.
DQ0–DQ7Data I/OCommon bidirectional 8-bit data bus with three-state output control via OE# and CS#.
CS1#Chip select 1Active-low primary enable; must be low and CS2 high for read/write access.
CS2Chip select 2Active-high secondary enable; used with CS1# for hierarchical memory banking.
WE#Write enableActive-low write strobe; latches DQ0–DQ7 data on falling edge when CS1# = L and CS2 = H.
OE#Output enableActive-low control for output buffer; prevents bus contention during shared-data-bus operation.
VccPower supplySingle 4.5–5.5 V supply; powers core, I/O, and address buffers.
VssGroundReference return path for all internal circuits and I/O signals.
NCNo connectionPin 1 (SOP top-left corner) is unconnected; must remain floating or grounded per layout guidelines.

Key Features

Feature Design Value
No refresh requiredEliminates external refresh controller or timer overhead-ideal for ultra-low-power sleep modes.
OR-tie capable outputsThree-state DQ lines allow wired-OR bus sharing across multiple SRAMs or peripherals without external logic.
Dual chip select (CS1#, CS2)Enables 2× memory expansion (e.g., 2 MB using two devices) with no glue logic or address decoding complexity.
Low-voltage data retentionMaintains valid data at Vcc = 2.0 V, supporting coin-cell backup in tamper-proof meters and real-time clocks.
TTL-compatible signalingDirect interface with legacy 5 V microcontrollers (e.g., 8051, PIC18F, MSP430 with 5 V tolerance) without level shifters.

Applications

Industrial PLC Data Buffer Smart Meter Backup Memory

Use Scenario: Storing configuration, calibration, and event-log data in programmable logic controllers operating in factory environments with wide temperature swings and intermittent power.

IC Role / Device Role / Timing Role: Nonvolatile data buffer retaining critical state during AC loss; accessed asynchronously by ARM Cortex-M3/M4 host MCU.

Use Value: 0.6 µA standby current and -40°C to +85°C rating ensure >10-year data integrity without supercapacitor or battery replacement.

Use Scenario: Preserving tariff schedules, consumption history, and tamper-event timestamps in electricity/water/gas meters powered by primary lithium batteries.

IC Role / Device Role / Timing Role: Battery-backed SRAM holding metering registers during main power outage; enabled via CS2-controlled retention mode.

Use Value: 2.0 V data retention threshold allows operation down to end-of-life battery voltage (~2.2 V), maximizing usable battery life.

Medical Device Parameter Storage Automotive Body Control Module

Use Scenario: Storing user-configurable therapy parameters and error logs in portable infusion pumps and diagnostic monitors requiring FDA-compliant data persistence.

IC Role / Device Role / Timing Role: Static RAM providing deterministic, zero-latency read/write access for safety-critical parameter updates during runtime.

Use Value: 55 ns access time ensures sub-100 ns register writes, meeting real-time response requirements for alarm-triggered data capture.

Use Scenario: Holding door lock status, mirror position presets, and lighting configuration in automotive body control units exposed to under-hood thermal cycling.

IC Role / Device Role / Timing Role: General-purpose scratchpad memory for MCU firmware managing distributed CAN/LIN node configurations.

Use Value: Industrial temperature grade (-40°C to +85°C) and 5.5 V absolute max rating withstand load-dump transients and extended hot-soak conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV10248AL-10TLI10 ns faster access (45 ns), but higher 2 µA typical standby current; same 32-pin SOP package.Better suited for high-speed data acquisition where latency dominates power budget.Select IS61LV10248AL-10TLI only if system timing margin requires <50 ns access and standby current is secondary.
AS6C1008-55PCNSame 55 ns speed and 0.5 µA standby, but rated only for 0°C to +70°C commercial temp range.Limited to indoor consumer or office equipment-not suitable for outdoor or under-hood deployment.Choose AS6C1008-55PCN only for cost-sensitive commercial applications with controlled ambient conditions.

Compared with R1LP0108ESN-5SI#B1, the IS61LV10248AL-10TLI trades lower power for higher speed, while the AS6C1008-55PCN matches speed and power but lacks industrial temperature qualification-making R1LP0108ESN-5SI#B1 the optimal choice for ruggedized, battery-dependent systems.

Availability

R1LP0108ESN-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLCs, smart utility meters, medical infusion pumps, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for R1LP0108ESN-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-backed memory applications in industrial automation and metering-emphasizing data retention, wide temperature operation, and TTL interoperability.

FAQ

What is the maximum operating frequency supported by R1LP0108ESN-5SI#B1?

R1LP0108ESN-5SI#B1 does not operate on a clock signal-it is a fully asynchronous static RAM. Its 55 ns access time supports reliable interface with microcontrollers running up to ~12 MHz bus cycles without wait states. The device uses address and control strobes (CS1#, WE#, OE#) rather than a system clock, enabling deterministic timing independent of CPU clock domain.

Does R1LP0108ESN-5SI#B1 require an external refresh circuit?

No, R1LP0108ESN-5SI#B1 is a true static RAM and requires no refresh circuitry. Its 0.15 µm CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet setup/hold timing. This eliminates refresh overhead in firmware and simplifies hardware design for battery-operated systems.

Can R1LP0108ESN-5SI#B1 retain data during power failure?

Yes, R1LP0108ESN-5SI#B1 supports data retention down to Vcc = 2.0 V when placed in standby mode via CS2 ≤ 0.2 V or CS1# ≥ Vcc − 0.2 V. In this state, typical standby current is 0.6 µA at 25°C, allowing multi-year retention on a standard CR2032 coin cell in properly designed backup circuits.

Is R1LP0108ESN-5SI#B1 pin-compatible with other 32-pin SRAMs?

R1LP0108ESN-5SI#B1 follows industry-standard 32-pin SOP pinout for 128k × 8 SRAMs (e.g., compatible with pin positions of IS61LV10248, AS6C1008). However, functional equivalence requires verification of CS2 polarity (active-high vs. active-low), OE#/WE# timing, and voltage thresholds-R1LP0108ESN-5SI#B1 uses active-high CS2 and TTL-compatible inputs.

What is the meaning of "-5SI" in R1LP0108ESN-5SI#B1?

In R1LP0108ESN-5SI#B1, "-5" denotes 55 ns access time, "S" indicates 32-pin SOP package, "I" specifies industrial temperature range (-40°C to +85°C), and "#B1" refers to tape-and-reel packaging with RoHS-compliant lead finish. The "SN" suffix confirms the 525-mil body width variant per Renesas's ordering nomenclature.

R1LP0108ESN-5SI#B1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-SOIC (0.450", 11.40mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-SOP

R1LP0108ESN-5SI#B1 FAQ

1.How can I place an order for R1LP0108ESN-5SI#B1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESN-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESN-5SI#B1 reliable?

The price and inventory of R1LP0108ESN-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESN-5SI#B1 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESN-5SI#B1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESN-5SI#B1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESN-5SI#B1?

R1LP0108ESN-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESN-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESN-5SI#B1?

For technical support, including R1LP0108ESN-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESN-5SI#B1 requirements.

6.How does Aetrix verify that R1LP0108ESN-5SI#B1 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESN-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESN-5SI#B1 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESN-5SI#B1?

All R1LP0108ESN-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESN-5SI#B1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESN-5SI#B1 part is unused and in its original packaging.

Return procedure for R1LP0108ESN-5SI#B1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LP0108ESN-5SI#B1 Tags

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