Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LP0108ESN-5SI#S0

Name: R1LP0108ESN-5SI#S0
Brand: Renesas
SKU: R1LP0108ESN-5SI#S0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: R1LP0108ESN-5SI#S0

Manufacturer:: Renesas

Category:: Memory

Package:: 32-SOIC (0.450", 11.40mm Width)

Datasheet:: R1LP0108ESN-5SI#S0.pdf

Description:: IC SRAM 1MBIT PARALLEL 32SOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,827

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

R1LP0108ESN-5SI#S0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and -40°C to +85°C industrial temperature range. Packaged in 32-pin SOP, it features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion in embedded control and battery-backed systems.

For engineers reviewing the R1LP0108ESN-5SI#S0 datasheet, R1LP0108ESN-5SI#S0 pinout, R1LP0108ESN-5SI#S0 application, or R1LP0108ESN-5SI#S0 equivalent, key selection criteria include standby current (0.6 µA typical at 5.0 V), data retention down to 2.0 V, three-state outputs with OR-tie capability, and compatibility with legacy 8-bit microcontroller buses requiring simple parallel interface timing.

Technical Context

The R1LP0108ESN-5SI#S0 implements a fully static memory architecture with no internal clocks or refresh circuitry, relying on CMOS latching cells for indefinite data retention while powered. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping and bank selection without external decoding logic.

Timing is governed by asynchronous parallel interface signals: WE# controls write initiation, OE# gates output drivers, and address setup/hold times are zero ns - enabling direct connection to microcontrollers with minimal glue logic. Data retention mode activates when CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V with CS2 ≥ Vcc−0.2 V, drawing only 0.6 µA at 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Mb (131,072 words × 8 bits) - supports full 8-bit data bus interfacing without byte masking.
Access Time	55 ns - ensures compatibility with 12–15 MHz microcontroller system clocks using standard wait-state logic.
Supply Voltage	4.5–5.5 V - operates across full TTL/CMOS 5 V rail tolerance, eliminating need for voltage regulators in legacy designs.
Standby Current	0.6 µA typical at 5.0 V and 25°C - enables multi-year battery backup in real-time clock and configuration storage applications.
Data Retention V_CC	2.0 V minimum - preserves contents during brown-out or battery-switchover without external supervision circuitry.
Operating Temperature	-40°C to +85°C - qualified for industrial control, automotive body electronics, and outdoor metering environments.
I/O Compatibility	TTL input thresholds (V_IL ≤ 0.8 V, V_IH ≥ 2.2 V) and output drive (V_OH ≥ 2.4 V @ -1 mA) - interoperable with 74LS, 74HC, and MCU GPIOs without level shifters.

Pinout & Package

Package: 32-pin plastic SOP (525-mil width), JEDEC MS-012AC compliant, lead-free and RoHS-compliant per Renesas documentation.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address inputs	17-bit address bus supporting full 131,072-word addressing; no multiplexing required.
DQ0–DQ7	Bi-directional data I/O	Common 8-bit data bus with three-state outputs controlled by OE# and chip selects - enables bus sharing with other peripherals.
CS1#	Chip select 1 (active-low)	Primary enable; device selected only when CS1# = L and CS2 = H - prevents partial selection glitches.
CS2	Chip select 2 (active-high)	Secondary enable; used with CS1# for hierarchical memory banking or as data retention trigger when pulled low.
WE#	Write enable (active-low)	Controls write cycle initiation; write occurs on overlap of CS1# = L, CS2 = H, and WE# = L - eliminates need for write strobe generation.
OE#	Output enable (active-low)	Enables DQ outputs during read; high-Z state prevents bus contention when multiple devices share data lines.
Vcc	Power supply	+4.5 to +5.5 V supply; decoupling capacitor placement near Pin 17 critical for noise immunity in high-speed reads.
Vss	Ground	Signal ground reference; tied to Pin 16 - requires low-inductance connection to system ground plane.
NC	No connect	Pin 1 is unconnected; must remain floating - not usable as strap or test point.

Key Features

Feature	Design Value
No refresh required	Eliminates external refresh controller or timer interrupt overhead - reduces firmware complexity and power in battery-operated systems.
0.6 µA standby current	Extends coin-cell life beyond 10 years in always-on backup memory applications such as RTC registers and calibration data storage.
OR-tie capable outputs	Allows multiple R1LP0108ESN-5SI#S0 devices to share a common data bus without external bus transceivers - simplifies multi-bank memory expansion.
Dual chip select (CS1#, CS2)	Enables 2:1 memory bank selection or independent data retention control - supports fail-safe memory partitioning in safety-critical firmware.
2.0 V data retention threshold	Maintains stored values during brown-out events down to 2.0 V supply - avoids external supervisor ICs in cost-sensitive industrial controllers.

Applications

Industrial PLC Data Buffer	Medical Device Configuration Storage
Use Scenario: Storing I/O scan history and alarm logs in programmable logic controllers operating in factory environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Parallel-accessed static RAM providing deterministic 55 ns read/write latency for real-time data buffering without CPU intervention. Use Value: -40°C to +85°C rating ensures reliable operation in unconditioned control cabinets; 0.6 µA standby current minimizes backup battery drain during extended power outages.	Use Scenario: Retaining patient calibration settings and device configuration parameters in portable diagnostic equipment powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: Non-volatile shadow memory holding critical setup data during battery swaps or deep sleep modes. Use Value: 2.0 V data retention allows uninterrupted parameter preservation even during 3.0 V battery sag; TTL compatibility eliminates level-shifting components in 5 V MCU subsystems.
Automotive Body Control Module	Smart Meter Firmware Cache
Use Scenario: Caching door lock status, lighting sequences, and window position data in automotive BCMs where ECU power cycling occurs frequently. IC Role / Device Role / Timing Role: Low-power SRAM acting as fast-access scratchpad for volatile vehicle state variables between ignition cycles. Use Value: Dual CS logic permits selective retention of safety-critical data (e.g., brake light status) while powering down non-essential banks - reducing overall system quiescent current.	Use Scenario: Accelerating firmware update verification and cryptographic signature validation in utility smart meters with constrained processing resources. IC Role / Device Role / Timing Role: High-speed buffer for temporary storage of AES-128 keys and firmware image segments during over-the-air updates. Use Value: 55 ns access time enables full 1 MB image validation in under 60 ms; three-state outputs prevent bus conflicts during concurrent communication and memory access.

Industrial PLC Data Buffer

Medical Device Configuration Storage

Use Scenario: Storing I/O scan history and alarm logs in programmable logic controllers operating in factory environments with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Parallel-accessed static RAM providing deterministic 55 ns read/write latency for real-time data buffering without CPU intervention.

Use Value: -40°C to +85°C rating ensures reliable operation in unconditioned control cabinets; 0.6 µA standby current minimizes backup battery drain during extended power outages.

Use Scenario: Retaining patient calibration settings and device configuration parameters in portable diagnostic equipment powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: Non-volatile shadow memory holding critical setup data during battery swaps or deep sleep modes.

Use Value: 2.0 V data retention allows uninterrupted parameter preservation even during 3.0 V battery sag; TTL compatibility eliminates level-shifting components in 5 V MCU subsystems.

Automotive Body Control Module

Smart Meter Firmware Cache

Use Scenario: Caching door lock status, lighting sequences, and window position data in automotive BCMs where ECU power cycling occurs frequently.

IC Role / Device Role / Timing Role: Low-power SRAM acting as fast-access scratchpad for volatile vehicle state variables between ignition cycles.

Use Value: Dual CS logic permits selective retention of safety-critical data (e.g., brake light status) while powering down non-essential banks - reducing overall system quiescent current.

Use Scenario: Accelerating firmware update verification and cryptographic signature validation in utility smart meters with constrained processing resources.

IC Role / Device Role / Timing Role: High-speed buffer for temporary storage of AES-128 keys and firmware image segments during over-the-air updates.

Use Value: 55 ns access time enables full 1 MB image validation in under 60 ms; three-state outputs prevent bus conflicts during concurrent communication and memory access.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV10248AL-10TLI	10 ns faster access (45 ns), 3.3 V only supply (3.0–3.6 V), 32-pin TSOP package	Requires 3.3 V system rail and level translation for 5 V MCUs; better suited for new 3.3 V designs with tighter timing budgets	Select if migrating to 3.3 V architecture and needing sub-50 ns performance; not drop-in compatible due to voltage and timing mismatch.
AS6C1008-55PCN	Same 55 ns speed and 5 V supply, but higher standby current (5 µA typical), 28-pin SOJ package	Lacks CS2 pin and data retention below 4.5 V - unsuitable for battery backup or brown-out resilience use cases	Choose only for cost-sensitive 5 V systems where ultra-low standby is not required and PCB layout accommodates SOJ footprint.

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the R1LP0108ESN-5SI#S0 uniquely balances industrial temperature range, 2.0 V data retention, and 0.6 µA standby - making it the sole option among these three for long-term battery-backed memory in harsh environments without voltage translation.

Availability

R1LP0108ESN-5SI#S0 is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and automotive body electronics requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for R1LP0108ESN-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-backed memory applications in space-constrained embedded systems where reliability, simplicity, and long-term data retention are critical.

FAQ

What is the maximum operating frequency supported by the R1LP0108ESN-5SI#S0?

The R1LP0108ESN-5SI#S0 does not operate on a clock signal - it is an asynchronous static RAM. Its 55 ns access time corresponds to a maximum effective interface rate of approximately 18.2 MHz for consecutive random accesses. System timing is determined by microcontroller bus cycle constraints, not an internal oscillator. The R1LP0108ESN-5SI#S0 remains stable across its full -40°C to +85°C range without derating.

Does the R1LP0108ESN-5SI#S0 require external refresh circuitry?

No, the R1LP0108ESN-5SI#S0 is a true static RAM and contains no dynamic storage elements. It retains data indefinitely as long as power is applied and does not require periodic refresh cycles, timers, or external refresh controllers. This eliminates firmware overhead and timing-critical refresh windows - a key advantage over DRAM in resource-constrained embedded systems using the R1LP0108ESN-5SI#S0.

Can the R1LP0108ESN-5SI#S0 retain data when Vcc drops below 4.5 V?

Yes, the R1LP0108ESN-5SI#S0 guarantees data retention down to 2.0 V Vcc when placed in retention mode via CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V with CS2 ≥ Vcc−0.2 V. At 3.0 V and 25°C, standby current is 0.6 µA typical. This feature enables robust operation during brown-out conditions and battery switchover without external supervisors - a core design objective of the R1LP0108ESN-5SI#S0.

Is the R1LP0108ESN-5SI#S0 pin-compatible with other 32-pin SRAMs like the HM628128?

No, the R1LP0108ESN-5SI#S0 uses a non-standard pinout: Pin 1 is NC, Pin 16 is GND, Pin 17 is Vcc, and CS2 is active-high - differing from HM628128's active-low CS2 and Vcc/GND placement. Direct replacement would require PCB redesign. The R1LP0108ESN-5SI#S0 pin assignment is fixed per Renesas' SOP layout and must be implemented as documented in the R10DS0151EJ0100 datasheet.

What is the meaning of "#S0" in the R1LP0108ESN-5SI#S0 part number?

The "#S0" suffix denotes tape-and-reel packaging with 1,000 units per reel, using embossed carrier tape per Renesas' ordering convention. It indicates the R1LP0108ESN-5SI#S0 is supplied in automated assembly-ready format, distinct from tube-packaged variants (e.g., #B0). The "SI" portion specifies the -40°C to +85°C industrial temperature grade, and "-5" indicates 55 ns access speed - all confirmed in the R10DS0151EJ0100 datasheet revision 1.00.

R1LP0108ESN-5SI#S0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 32-SOIC (0.450", 11.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-SOP

R1LP0108ESN-5SI#S0 FAQ

1.How can I place an order for R1LP0108ESN-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0108ESN-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0108ESN-5SI#S0 reliable?

The price and inventory of R1LP0108ESN-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0108ESN-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LP0108ESN-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0108ESN-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0108ESN-5SI#S0?

R1LP0108ESN-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0108ESN-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0108ESN-5SI#S0?

For technical support, including R1LP0108ESN-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0108ESN-5SI#S0 requirements.

6.How does Aetrix verify that R1LP0108ESN-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LP0108ESN-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0108ESN-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LP0108ESN-5SI#S0?

All R1LP0108ESN-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0108ESN-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0108ESN-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LP0108ESN-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…