Renesas R1LP0108ESN-5SR#B0

Overview

R1LP0108ESN-5SR#B0 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and TTL-compatible I/O. It operates over 0°C to +70°C and features 0.6 µA typical standby current at 5.0 V - optimized for battery-backed memory systems in industrial controllers and portable instrumentation.

For engineers reviewing the R1LP0108ESN-5SR#B0 datasheet, R1LP0108ESN-5SR#B0 pinout, R1LP0108ESN-5SR#B0 application, or R1LP0108ESN-5SR#B0 equivalent, key selection criteria include its no-refresh operation, dual chip select architecture (CS1# and CS2), common data I/O with three-state outputs, and compatibility with legacy 5 V microcontroller buses requiring deterministic timing and low quiescent power.

Technical Context

The R1LP0108ESN-5SR#B0 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, eliminating need for clocks or refresh cycles. Its address decoding supports up to A0–A16 (17 address lines), enabling direct interfacing with 8-bit microcontrollers without external address latching.

Control logic uses active-low chip selects (CS1#, CS2), write enable (WE#), and output enable (OE#) to manage read/write states and bus contention. Standby mode is entered when CS2 is low or both CS2 is high and CS1# is high - achieving sub-microamp retention current under Vcc ≥ 2.0 V.

Key Specifications

Pinout & Package

Package: 32-pin 525-mil plastic SOP (PRSP0032DF-A), lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62128EV30LL-55ZSXIT and IS61LV10248AL-10TLI, the R1LP0108ESN-5SR#B0 uniquely combines 5 V operation, 55 ns timing, sub-µA standby, and 2.0 V data retention - making it the only viable choice for retrofitting battery-backed 5 V industrial controllers without redesigning power or interface layers.

Availability

R1LP0108ESN-5SR#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical instrument memory, and test equipment configuration storage requiring stable component supply across extended production lifecycles.

Supply support for R1LP0108ESN-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-operated memory applications where simplicity, reliability, and long-term data retention outweigh raw speed - targeting instrumentation, control panels, and portable diagnostics equipment.

FAQ

What is the maximum operating frequency supported by the R1LP0108ESN-5SR#B0?

The R1LP0108ESN-5SR#B0 does not use a clock and has no maximum operating frequency specification. Its performance is defined by timing parameters: 55 ns access time (tAA), 55 ns read cycle (tRC), and 55 ns write cycle (tWC). These values support reliable operation with 8-bit microcontrollers running at up to 12–15 MHz bus speeds, provided setup/hold times are met. The R1LP0108ESN-5SR#B0 functions as a fully static memory - no clock signal is required or accepted.

Does the R1LP0108ESN-5SR#B0 support battery backup operation, and what is the minimum Vcc for data retention?

Yes, the R1LP0108ESN-5SR#B0 supports battery backup operation with guaranteed data retention down to 2.0 V Vcc. In retention mode - activated by asserting CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V while CS2 ≥ Vcc−0.2 V - the device draws only 0.6 µA typical at 25°C. This enables multi-year retention on small lithium coin cells or supercapacitors. The R1LP0108ESN-5SR#B0 maintains data integrity across the full −40°C to +85°C range even at reduced Vcc, with retention current rising to 10 µA at +85°C.

Can the R1LP0108ESN-5SR#B0 be used in a 3.3 V system?

No, the R1LP0108ESN-5SR#B0 is specified only for 4.5–5.5 V operation and is not rated for 3.3 V use. Its input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and internal logic are designed for 5 V TTL compatibility. Applying 3.3 V may result in unreliable read/write behavior or excessive leakage. For 3.3 V systems, consider alternatives like the IS61LV10248AL-10TLI. The R1LP0108ESN-5SR#B0 must be used in a properly regulated 5 V environment.

How does the dual chip select (CS1# and CS2) function in the R1LP0108ESN-5SR#B0?

In the R1LP0108ESN-5SR#B0, CS2 controls the address, WE#, CS1#, OE#, and Din buffers, while CS1# enables the core memory array. A read or write requires CS1# = L and CS2 = H. If CS2 = L, the device enters standby regardless of CS1#. If CS2 = H and CS1# = H, the device also enters standby. This two-level select allows hierarchical memory mapping - e.g., CS2 can decode major address regions, while CS1# selects sub-banks. The R1LP0108ESN-5SR#B0 leverages this to simplify decoding logic in multi-SRAM systems.

Is the R1LP0108ESN-5SR#B0 pin-compatible with other 32-pin SRAMs such as the AS6C1008 or CY62128?

No, the R1LP0108ESN-5SR#B0 is not pin-compatible with AS6C1008 or CY62128. While all are 32-pin × 8-bit SRAMs, the R1LP0108ESN-5SR#B0 uses a unique pinout: A16 is on pin 2, NC on pin 1, and CS2 on pin 6 - differing from standard JEDEC layouts. Substituting without PCB revision risks address misalignment, bus contention, or failure to enter standby. Always verify pin mapping against the R1LP0108ESN-5SR#B0 datasheet before replacement. The R1LP0108ESN-5SR#B0 requires its specific footprint and signal routing.