Renesas R1LP0108ESN-5SR#S0

Overview

R1LP0108ESN-5SR#S0 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, single 4.5–5.5 V supply, and 0.6 µA typical standby current at 5.0 V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion. It is used in battery-backed data logging systems where low quiescent power and simple parallel interfacing are critical.

For engineers reviewing the R1LP0108ESN-5SR#S0 datasheet, R1LP0108ESN-5SR#S0 pinout, R1LP0108ESN-5SR#S0 application, or R1LP0108ESN-5SR#S0 equivalent, key selection criteria include its 32-pin SOP package, -5 speed grade (55 ns), industrial temperature range (0°C to +70°C), and compatibility with legacy 8-bit microcontroller buses requiring high-Z output control and OR-tie capability.

Technical Context

The R1LP0108ESN-5SR#S0 implements a fully static CMOS memory array (128k × 8-bit) with independent address decoding, sense/write amplifiers, and TTL-level input buffers. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external logic.

Operation requires no clocks or refresh cycles; data retention is maintained down to 2.0 V with sub-µA current draw. Output enable (OE#) and write enable (WE#) provide precise bus contention control, while three-state outputs support wired-OR configurations in shared-data-bus systems.

Key Specifications

Pinout & Package

Package: 32-pin plastic SOP (525-mil width), JEDEC MS-012AC compliant, lead-free and RoHS-compliant per Renesas documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with IS61LV10248AL-10TLI and CY62128ELL-55ZSXIT, the R1LP0108ESN-5SR#S0 uniquely balances 5 V compatibility, ultra-low 0.6 µA standby, and dual-select flexibility-making it optimal for battery-backed industrial controllers where voltage stability and power budget are constrained.

Availability

R1LP0108ESN-5SR#S0 is available at Aetrix Electronics and suitable for industrial data loggers, medical device buffers, and POS terminal caches requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for R1LP0108ESN-5SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was designed specifically for low-power, battery-operated memory applications requiring simple parallel interfacing, zero-refresh operation, and extended data retention at reduced Vcc - targeting embedded systems with strict energy and reliability constraints.

FAQ

What is the maximum operating frequency supported by the R1LP0108ESN-5SR#S0?

The R1LP0108ESN-5SR#S0 does not operate on a clock signal - it is a static RAM with asynchronous timing. Its 55 ns access time corresponds to a maximum effective bus cycle rate of approximately 12–15 MHz when interfaced with a microcontroller using standard read/write strobes. The absence of internal clocks eliminates frequency-related setup/hold violations and jitter sensitivity, making the R1LP0108ESN-5SR#S0 ideal for deterministic real-time buffering.

Does the R1LP0108ESN-5SR#S0 require external refresh circuitry?

No, the R1LP0108ESN-5SR#S0 is a true static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and valid control signals are maintained. This eliminates firmware overhead and timing-critical refresh windows - a key advantage over DRAM or pseudo-SRAM in resource-constrained embedded systems using the R1LP0108ESN-5SR#S0.

Can the R1LP0108ESN-5SR#S0 retain data during battery replacement?

Yes, the R1LP0108ESN-5SR#S0 supports data retention down to 2.0 V supply voltage with typical current draw of 0.6 µA at 3.0 V and 25°C. When configured in data retention mode (via CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V), it maintains stored contents during brief power loss or battery swap - a critical feature for applications like utility metering or medical event logging where the R1LP0108ESN-5SR#S0 serves as non-volatile scratchpad memory.

Is the R1LP0108ESN-5SR#S0 pin-compatible with other 32-pin SRAMs?

The R1LP0108ESN-5SR#S0 uses a standard 32-pin SOP footprint with industry-common pin assignments (A0–A16, DQ0–DQ7, CS1#, CS2, WE#, OE#, Vcc, Vss), but its dual independent chip select (CS1# active-low, CS2 active-high) differs from many legacy SRAMs that use a single CS or inverted CS pair. While physical pin count and spacing match JEDEC MS-012AC, functional pin mapping - especially CS2 polarity - must be verified before drop-in replacement; the R1LP0108ESN-5SR#S0 is not guaranteed pin- and function-compatible with arbitrary 32-pin SRAMs.

What is the meaning of "-5SR" in the R1LP0108ESN-5SR#S0 part number?

In R1LP0108ESN-5SR#S0, "-5" denotes the 55 ns access speed grade, "S" indicates the 32-pin SOP package, and "R" specifies the commercial temperature range (0°C to +70°C). The "#S0" suffix confirms tape-and-reel packaging (1000 pcs/reel) with standard RoHS compliance. This full designation distinguishes it from variants like -5SI (industrial temp), -7SR (70 ns speed), or ESA/ESF suffixes (sTSOP/TSOP packages), ensuring correct thermal, timing, and mechanical fit for the R1LP0108ESN-5SR#S0 in production builds.