Renesas R1LP0108ESN-7SI#B0

Overview

R1LP0108ESN-7SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 70 ns access time, operating on a single 4.5–5.5 V supply and featuring 0.6 µA typical standby current at 5.0 V. It uses TTL-compatible I/O, supports easy memory expansion via dual chip select inputs (CS1# and CS2), and is designed for battery-backed or low-voltage embedded systems requiring non-refreshed, reliable data retention.

For engineers reviewing the R1LP0108ESN-7SI#B0 datasheet, R1LP0108ESN-7SI#B0 pinout, R1LP0108ESN-7SI#B0 application, or R1LP0108ESN-7SI#B0 equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), 32-pin SOP package compatibility, low-leakage data retention down to 2.0 V, and OR-tie capable three-state outputs for bus sharing.

Technical Context

The R1LP0108ESN-7SI#B0 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS and TFT process, eliminating need for clocks or refresh cycles. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping and seamless expansion without external logic.

Read and write operations are controlled by independent OE# (output enable) and WE# (write enable) signals, with three-state outputs supporting bus contention avoidance. Data retention mode is activated either by pulling CS2 ≤ 0.2 V or asserting CS1# ≥ Vcc–0.2 V while holding CS2 in valid high/low state - enabling ultra-low ICCDR of 0.6 µA at 25°C and 3.0 V.

Key Specifications

Pinout & Package

Package: 32-pin 525-mil plastic SOP (PRSP0032DF-A), surface-mount, gull-wing lead form with 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Compared with IS61LV10248AL-70TQLI and AS6C1008-70SCN, the R1LP0108ESN-7SI#B0 uniquely combines 5 V operation, industrial temperature range, 32-pin SOP compatibility, and verified 2.0 V data retention - making it the only option among the three suitable for battery-backed industrial logging with brown-out resilience.

Availability

R1LP0108ESN-7SI#B0 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, portable medical device data loggers, and automotive body control modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for R1LP0108ESN-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0108E Series was developed as part of Renesas's LPSRAM portfolio to deliver low-power, high-reliability static RAM for battery-operated and safety-critical embedded systems requiring zero-refresh operation and extended data retention.

FAQ

What is the maximum operating temperature range supported by the R1LP0108ESN-7SI#B0?

The R1LP0108ESN-7SI#B0 is rated for operation from –40°C to +85°C, meeting industrial temperature specifications. This range is confirmed in the Ordering Information table on page 2 of the R10DS0151EJ0100 datasheet, where "I" suffix denotes the industrial grade. The device maintains full AC and DC performance across this range, including 70 ns access time and 0.6 µA standby current at 25°C.

Does the R1LP0108ESN-7SI#B0 require a refresh circuit or clock signal?

No, the R1LP0108ESN-7SI#B0 is a fully static RAM and requires no clock signal or periodic refresh cycles. Its architecture uses bistable latches for each memory cell, enabling indefinite data retention as long as power is applied and control signals meet timing specifications. This eliminates refresh overhead in microcontroller firmware and simplifies PCB design compared to DRAM or pseudo-SRAM solutions.

Can the R1LP0108ESN-7SI#B0 retain data when Vcc drops below 4.5 V?

Yes, the R1LP0108ESN-7SI#B0 supports data retention down to 2.0 V Vcc, as specified in the Low Vcc Data Retention Characteristics table on page 12 of the datasheet. In retention mode - activated by pulling CS2 ≤ 0.2 V or asserting CS1# ≥ Vcc–0.2 V - the device draws only 0.6 µA typical current at 3.0 V and 25°C, enabling multi-year backup from small batteries or supercapacitors.

What package type is used for the R1LP0108ESN-7SI#B0?

The R1LP0108ESN-7SI#B0 uses a 32-pin 525-mil plastic SOP (Small Outline Package) with gull-wing leads, identified by package code PRSP0032DF-A. This is explicitly listed in the Ordering Information table on page 2 of the R10DS0151EJ0100 datasheet under the "Package" column for the R1LP0108ESN-7SI#B* part family.

How does the dual chip select (CS1# and CS2) interface work on the R1LP0108ESN-7SI#B0?

The R1LP0108ESN-7SI#B0 requires both CS1# low and CS2 high to enable memory access - a two-signal decode scheme that supports hierarchical memory mapping. CS1# is active-low and CS2 is active-high; the device enters standby if either CS1# is high or CS2 is low. This arrangement allows straightforward expansion to larger memory spaces using standard address-line decoding without additional logic gates.