Renesas R1LP0108ESN-7SR#B0

Overview

R1LP0108ESN-7SR#B0 from Renesas Electronics is a 1Mb low-power static RAM (128k × 8-bit) in 32-pin SOP packaging, operating on a single 4.5–5.5V supply with 70 ns access time and typical standby current of 0.6 µA at 5.0V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion-ideal for battery-backed embedded controllers and portable instrumentation.

For engineers reviewing the R1LP0108ESN-7SR#B0 datasheet, R1LP0108ESN-7SR#B0 pinout, R1LP0108ESN-7SR#B0 application, or R1LP0108ESN-7SR#B0 equivalent, key selection criteria include its 70 ns read/write timing, 0–+70°C industrial temperature range, 32-pin SOP mechanical compatibility, and data retention down to 2.0V Vcc-critical for low-voltage backup operation in medical monitors and industrial PLCs.

Technical Context

This device implements a fully static CMOS memory architecture with no internal clocks or refresh circuitry, relying solely on address and control signal timing. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external decoding logic, while OE# and WE# provide independent read/write bus control.

The memory array is organized as 131,072 words × 8 bits, fabricated using Renesas's 0.15 µm CMOS process. All I/O pins are TTL-compatible with VIH ≥ 2.2V and VIL ≤ 0.8V, and output drivers support OR-tie capability via three-state outputs controlled by CS1#, CS2, and OE#.

Key Specifications

Pinout & Package

Package: 32-pin plastic SOP (525-mil width), JEDEC MS-012AC compliant, with 1.27 mm pitch and standard gull-wing lead form factor.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with R1LP0108ESN-7SR#B0, IS61LV1024-70TLI offers better power efficiency but mandates 3.3 V infrastructure, while AS6C1008-70PCN preserves 5 V compatibility and pinout but sacrifices data retention margin and standby performance-making R1LP0108ESN-7SR#B0 optimal for mixed-voltage, battery-resilient designs.

Availability

R1LP0108ESN-7SR#B0 is available at Aetrix Electronics and suitable for medical monitoring, industrial data logging, and portable test equipment requiring stable component supply, long-lifecycle availability, and guaranteed traceable sourcing.

Supply support for R1LP0108ESN-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The R1LP0108E Series was designed specifically for low-voltage, low-power static RAM applications demanding simple parallel interfacing, battery backup capability, and robust data retention-targeting portable and embedded systems where refresh-free operation is essential.

FAQ

What is the maximum access time specified for R1LP0108ESN-7SR#B0?

The R1LP0108ESN-7SR#B0 has a maximum access time of 70 ns under standard operating conditions (Vcc = 4.5–5.5 V, Ta = 0 to +70°C). This value applies to both address access time (tAA) and chip select access time (tACS1/tACS2), ensuring deterministic timing for 10–14 MHz bus interfaces. The -7 suffix in the part number explicitly denotes this 70 ns speed grade.

Does R1LP0108ESN-7SR#B0 require a refresh clock or external refresh circuitry?

No, R1LP0108ESN-7SR#B0 is a fully static RAM and does not require any refresh clock or external refresh circuitry. Its CMOS-based memory cells retain data indefinitely as long as power is applied and control signals meet timing specifications. This eliminates refresh overhead in firmware and simplifies hardware design compared to DRAM solutions.

What is the minimum supply voltage at which R1LP0108ESN-7SR#B0 retains stored data?

R1LP0108ESN-7SR#B0 guarantees data retention down to 2.0 V Vcc under specified conditions-either when CS2 is held ≤ 0.2 V or when CS1# is held ≥ Vcc − 0.2 V with CS2 ≥ Vcc − 0.2 V. This low-voltage retention capability enables reliable operation during brown-out events and battery backup scenarios.

Can R1LP0108ESN-7SR#B0 be used in a 3.3 V system?

No, R1LP0108ESN-7SR#B0 is rated for 4.5–5.5 V operation only and is not specified for 3.3 V use. Its input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and internal logic are optimized for 5 V TTL compatibility. Attempting to operate it at 3.3 V may result in unreliable read/write behavior or data corruption.

What package type is used for R1LP0108ESN-7SR#B0?

R1LP0108ESN-7SR#B0 uses a 32-pin plastic SOP (Small Outline Package) with 525-mil body width, JEDEC MS-012AC compliant, and 1.27 mm lead pitch. The "SN" in the part number explicitly denotes this SOP variant, distinguishing it from sTSOP ("SA") and TSOP ("SF") versions in the same family.