Renesas R1LP0408CSP-7LI#SG

Overview

R1LP0408CSP-7LI#SG from Renesas Electronics is a 4-Mbit (512-kword × 8-bit) CMOS static RAM with 70 ns maximum access time, single 5 V ±10% supply, and −40 to +85°C industrial temperature range. It features 4 µW typical standby current, TTL-compatible I/O, three-state outputs, and battery backup support-used in embedded controllers and data logging systems requiring nonvolatile memory retention during power loss.

For engineers reviewing the R1LP0408CSP-7LI#SG datasheet, R1LP0408CSP-7LI#SG pinout, R1LP0408CSP-7LI#SG application, or R1LP0408CSP-7LI#SG equivalent, key selection criteria include its 32-pin SOP package, 70 ns read/write timing, low 0.8 µA typical ISB1 standby current at +25°C, compatibility with legacy 5 V microcontroller buses, and suitability for wide-temperature industrial storage buffering.

Technical Context

The R1LP0408CSP-7LI#SG implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its timing is governed by asynchronous control signals-CS#, OE#, and WE#-enabling direct interface with microprocessors without glue logic.

It supports equal address-access and cycle times (tAA = tRC = 70 ns max), features common bidirectional I/O lines with output enable control, and maintains data integrity down to 2 V VCC in retention mode with ≤0.8 µA ICCDR current at +25°C.

Key Specifications

Pinout & Package

Package: 32-pin plastic SOP (32P2M-A, 525-mil width), surface-mount, JEDEC MS-012AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-7TLI and CY62148EV30LL-70ZSXIT, the R1LP0408CSP-7LI#SG uniquely delivers 5 V native operation, 4 Mbit density in 32-pin SOP, and sub-µA standby current-making it irreplaceable in legacy industrial 5 V systems requiring long-term battery-backed buffering without voltage translation.

Availability

R1LP0408CSP-7LI#SG is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic monitors, automotive body control modules, smart energy meters, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.

Supply support for R1LP0408CSP-7LI#SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions, with integrated R&D and manufacturing capabilities.

The R1LP0408CSP-7LI#SG belongs to Renesas' Low Power SRAM product line, engineered for industrial and automotive applications demanding ultra-low standby current, wide temperature resilience, and long-term data retention without refresh.

FAQ

What is the maximum operating temperature range for the R1LP0408CSP-7LI#SG?

The R1LP0408CSP-7LI#SG is rated for operation from −40°C to +85°C. This wide industrial temperature range is confirmed in the Absolute Maximum Ratings and DC Operating Conditions sections of the official Renesas datasheet (Rev. 2.00, May 2004), and applies across all specified timing and current parameters including tRC = 70 ns max and ISB1 ≤ 0.8 µA at +25°C. The device uses Renesas' advanced 0.15 µm CMOS process to ensure stability across this range.

Does the R1LP0408CSP-7LI#SG require a clock signal to operate?

No, the R1LP0408CSP-7LI#SG is a fully static RAM and requires no clock signal. Its operation is purely asynchronous, controlled only by address inputs (A0–A18), chip select (CS#), output enable (OE#), and write enable (WE#). This eliminates timing constraints associated with clock distribution and jitter, simplifying integration into microcontroller-based systems where precise clock synchronization is unavailable or undesirable-exactly as documented in the "Features" section of the R1LP0408C-I Series datasheet.

What is the standby current specification for R1LP0408CSP-7LI#SG at +25°C?

The R1LP0408CSP-7LI#SG has a typical standby current (ISB1) of 0.8 µA at +25°C, as specified in the DC Characteristics table (page 6) of the Renesas R1LP0408C-I Series datasheet Rev. 2.00. This value is measured under conditions where CS# ≥ VCC − 0.2 V and all inputs ≥ 0 V. The 0.8 µA figure directly enables multi-year battery backup in portable instrumentation and metering applications-consistent with Renesas' positioning of this part in its Low Power SRAM lineup.

Can the R1LP0408CSP-7LI#SG retain data when VCC drops below 5 V?

Yes, the R1LP0408CSP-7LI#SG retains stored data down to VCC = 2 V, as defined by the VDR parameter in the Low VCC Data Retention Characteristics table (page 12). At VCC = 3.0 V, its typical data retention current (ICCDR) is 0.8 µA at +25°C. This capability is enabled by internal circuitry that isolates the memory array during low-VCC conditions, allowing use with coin cells or supercapacitors-explicitly cited in the datasheet's "Battery backup operation" feature and retention timing waveform.

Is the R1LP0408CSP-7LI#SG pin-compatible with other devices in the R1LP0408C-I Series?

Yes, the R1LP0408CSP-7LI#SG shares identical pinout and package (32-pin SOP) with all R1LP0408C-I Series variants, including R1LP0408CSP-5SI, R1LP0408CSB-7LI, and R1LP0408CSC-7LI-as confirmed in the Pin Arrangement diagrams (page 3) and Ordering Information table (page 2) of the datasheet. While access time and package type differ across variants, the pin functions (A0–A18, I/O0–I/O7, CS#, OE#, WE#, VCC, VSS) and physical layout remain consistent, enabling drop-in replacement within the same package family.