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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LP0408DSB-5SI#S0

Name: R1LP0408DSB-5SI#S0
Brand: Renesas
SKU: R1LP0408DSB-5SI#S0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1LP0408DSB-5SI#S0

Manufacturer:: Renesas

Category:: Memory

Package:: 32-SOIC (0.400", 10.16mm Width)

Datasheet:: R1LP0408DSB-5SI#S0.pdf

Description:: IC SRAM 4MBIT PARALLEL 32TSOP II

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Product details

Overview

R1LP0408DSB-5SI#S0 from Renesas Electronics is a 4Mb advanced low-power static RAM (512-kword × 8-bit), designed for battery-backed memory applications requiring ultra-low standby current (1 µA typ. at +25°C), 55 ns access time, and single 5V supply operation (4.5–5.5 V). It serves as non-volatile data retention memory in industrial controllers and portable instrumentation.

For engineers reviewing the R1LP0408DSB-5SI#S0 datasheet, R1LP0408DSB-5SI#S0 pinout, R1LP0408DSB-5SI#S0 application, or R1LP0408DSB-5SI#S0 equivalent, key selection criteria include TSOP-II package compatibility, TTL-level I/O interface, low-V_CC data retention down to 2.0 V, and verified 55 ns read/write cycle timing under industrial temperature range (−40°C to +85°C).

Technical Context

The R1LP0408DSB-5SI#S0 implements a 2,048 × 2,048 memory matrix with full address decoding (A0–A18) and bidirectional I/O0–I/O7 pins controlled by CS#, WE#, and OE# signals. Its timing pulse generator ensures equal access and cycle times (t_RC = t_WC = 55 ns max), supporting synchronous read/write operations without external wait-state logic.

It features three-state outputs, direct TTL compatibility on all inputs/outputs, and dual-mode standby: standard ISB (0.5 mA max) and ultra-low ISB1 (10 µA max at +85°C) enabled by high-impedance control of address and control lines during CS# high. Data retention remains valid at V_CC ≥ 2.0 V with no external backup battery required.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory capacity	4 Mb (512 kwords × 8 bits) - supports 64 KB byte-addressable storage without external banking logic
Access time	55 ns max - enables direct interface with legacy 8-bit microcontrollers (e.g., 8051, Z80) running at ≤18 MHz
Standby current	1 µA typ. at +25°C (ISB1) - extends battery life to years in always-on backup mode
Supply voltage	4.5 V to 5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation drift
Data retention V_CC	2.0 V min - maintains stored data during brown-out or main power failure without capacitor hold-up
Operating temperature	−40°C to +85°C - qualified for industrial-grade embedded systems without derating
I/O interface	Three-state, TTL-compatible - eliminates need for level-shifting or bus buffers in 5 V systems

Pinout & Package

The R1LP0408DSB-5SI#S0 is housed in a 400-mil 32-pin plastic TSOP (Type II) package with standard JEDEC MO-141AC footprint and 0.5 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Vcc	Power supply	Primary 5 V supply input; decoupling capacitor required within 10 mm for stable 55 ns operation
Vss	Ground	Signal reference return; must be connected to system ground plane with low-inductance path
A0–A18	Address inputs	19-bit address bus accepting full 512-kword range; internally decoded with no external address latching needed
I/O0–I/O7	Bidirectional data bus	Common data path for read/write; high-impedance when CS# or OE# high, eliminating bus contention risk
CS#	Chip select	Active-low enable controlling internal buffers; high state forces ultra-low ISB1 standby mode
WE#	Write enable	Active-low write strobe; combined with CS# low to initiate write cycles per t_WP ≥ 40 ns timing
OE#	Output enable	Active-low output gate; controls I/O pin direction and timing (t_OE ≤ 25 ns) during read operations

Key Features

Feature	Design Value
Ultra-low standby current	1 µA typical at +25°C (ISB1) - reduces annual backup battery drain to <1 mAh, enabling 10+ year shelf life
Single 5 V supply operation	4.5–5.5 V range - eliminates need for dual-rail regulators or charge pumps in space-constrained designs
Equal access and cycle timing	t_RC = t_WC = 55 ns - simplifies timing budgeting in deterministic real-time systems with fixed bus cycles
Direct TTL compatibility	All inputs/outputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VOL ≤ 0.4 V) - removes level translators in legacy 5 V buses
Low-V_CC data retention	Valid down to 2.0 V with t_CDR = 0 ns - preserves memory contents immediately upon main power loss, no delay or setup required

Applications

Industrial PLC Data Buffer	Medical Device Event Log Storage
Use Scenario: Storing runtime configuration and fault logs in programmable logic controllers deployed in factory automation environments with intermittent power. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical state data during AC mains dropout; retains content at 2.0 V V_CC until backup capacitor discharges. Use Value: Eliminates need for EEPROM wear leveling or FRAM cost premium while delivering 100% data integrity across >100,000 power-loss events.	Use Scenario: Capturing timestamped diagnostic events (e.g., ECG anomalies, sensor calibration drift) in portable patient monitors operating on primary lithium batteries. IC Role / Device Role / Timing Role: Low-power memory node interfacing directly to 8-bit MCU data bus; enters ISB1 mode between sampling intervals to minimize quiescent draw. Use Value: Extends single-battery operational life by >30% versus standard SRAM, with zero firmware overhead for retention management.
Smart Meter Firmware Cache	Avionics Black Box Recorder
Use Scenario: Caching firmware update payloads and metering registers in ANSI C12.19-compliant electricity meters exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: High-reliability SRAM operating across −40°C to +85°C with guaranteed 55 ns access even at temperature extremes. Use Value: Ensures deterministic response to AMI command bursts without timing margin erosion or thermal throttling.	Use Scenario: Recording flight-critical telemetry (attitude, engine parameters) in UAVs where weight, power, and shock resistance are paramount. IC Role / Device Role / Timing Role: Shock-tolerant TSOP-II packaged memory with fast write cycle (t_WC = 55 ns) capturing 1 kHz sensor streams without FIFO buffering. Use Value: Reduces BOM count by replacing discrete latch + SRAM combo, lowering PCB layer count and assembly cost.

Industrial PLC Data Buffer

Medical Device Event Log Storage

Use Scenario: Storing runtime configuration and fault logs in programmable logic controllers deployed in factory automation environments with intermittent power.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical state data during AC mains dropout; retains content at 2.0 V V_CC until backup capacitor discharges.

Use Value: Eliminates need for EEPROM wear leveling or FRAM cost premium while delivering 100% data integrity across >100,000 power-loss events.

Use Scenario: Capturing timestamped diagnostic events (e.g., ECG anomalies, sensor calibration drift) in portable patient monitors operating on primary lithium batteries.

IC Role / Device Role / Timing Role: Low-power memory node interfacing directly to 8-bit MCU data bus; enters ISB1 mode between sampling intervals to minimize quiescent draw.

Use Value: Extends single-battery operational life by >30% versus standard SRAM, with zero firmware overhead for retention management.

Smart Meter Firmware Cache

Avionics Black Box Recorder

Use Scenario: Caching firmware update payloads and metering registers in ANSI C12.19-compliant electricity meters exposed to wide ambient temperature swings.

IC Role / Device Role / Timing Role: High-reliability SRAM operating across −40°C to +85°C with guaranteed 55 ns access even at temperature extremes.

Use Value: Ensures deterministic response to AMI command bursts without timing margin erosion or thermal throttling.

Use Scenario: Recording flight-critical telemetry (attitude, engine parameters) in UAVs where weight, power, and shock resistance are paramount.

IC Role / Device Role / Timing Role: Shock-tolerant TSOP-II packaged memory with fast write cycle (t_WC = 55 ns) capturing 1 kHz sensor streams without FIFO buffering.

Use Value: Reduces BOM count by replacing discrete latch + SRAM combo, lowering PCB layer count and assembly cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ISSI IS61LV5128AL-10TLI	10 ns faster access (45 ns), but higher ISB = 2 µA typ. at +25°C and no sub-2.5 V data retention	Preferred for high-speed data acquisition where timing margin is critical; unsuitable for long-term battery backup below 2.5 V	Select when system clock exceeds 22 MHz and V_CC never drops below 2.5 V during retention
Cypress CY62157EV30LL-45ZSXIT	Same 55 ns speed and 2.0 V retention, but 44-pin TSOP-I package (not pin-compatible) and 3.3 V only supply	Requires PCB redesign and level translation; suited for 3.3 V systems migrating from older Cypress SRAMs	Choose only if redesigning for 3.3 V architecture and needing Cypress's extended lifecycle support

Compared with IS61LV5128AL-10TLI and CY62157EV30LL-45ZSXIT, the R1LP0408DSB-5SI#S0 uniquely balances industrial temperature operation, 2.0 V data retention, and 5 V compatibility in a drop-in 32-pin TSOP-II footprint-making it optimal for retrofitting legacy 5 V systems requiring extended battery life without layout changes.

Availability

R1LP0408DSB-5SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and smart meter firmware caching requiring stable component supply across extended product lifecycles.

Supply support for R1LP0408DSB-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LP0408D Series was developed to deliver ultra-low-power, high-reliability SRAM for battery-backed industrial control and instrumentation-emphasizing data retention integrity, wide temperature operation, and seamless 5 V system integration.

FAQ

What is the minimum V_CC required to retain data in R1LP0408DSB-5SI#S0?

The R1LP0408DSB-5SI#S0 guarantees data retention down to 2.0 V V_CC, as specified in the Low V_CC Data Retention Characteristics table. At this voltage, ISB1 current remains ≤10 µA at +85°C, and no additional control signals or timing delays are required-the chip automatically enters retention mode when CS# is held high and V_CC drops within specification. This behavior is validated across the full −40°C to +85°C operating range.

Is R1LP0408DSB-5SI#S0 pin-compatible with other 32-pin TSOP SRAMs like the AS6C4008?

No, R1LP0408DSB-5SI#S0 is not pin-compatible with AS6C4008. While both use 32-pin TSOP-II packages, the R1LP0408DSB-5SI#S0 assigns A18 to Pin 1 and uses a distinct pinout per its datasheet Figure 1 (32-pin TSOP), whereas AS6C4008 places A18 on Pin 32 and differs in control signal placement. Direct substitution would cause address/data misalignment and functional failure without PCB revision.

Does R1LP0408DSB-5SI#S0 support asynchronous burst reads or page mode?

No, R1LP0408DSB-5SI#S0 does not support burst reads or page mode. It operates exclusively in asynchronous random-access mode with independent address setup (t_AS = 0 ns) and full 55 ns cycle timing for each read or write. The block diagram and operation table confirm single-word addressing only-no internal column counter or burst logic is implemented.

What is the maximum capacitive load the R1LP0408DSB-5SI#S0 I/O pins can drive?

The R1LP0408DSB-5SI#S0 I/O pins are characterized for a 50 pF load with 500 Ω series termination, as defined in the AC Characteristics test conditions. Under these conditions, t_OE ≤ 25 ns and t_OLZ ≤ 5 ns are guaranteed. Driving loads >50 pF may increase propagation delay and violate timing margins-external bus transceivers or reduced trace length are recommended for heavier loads.

Can R1LP0408DSB-5SI#S0 be used in a 3.3 V system?

No, R1LP0408DSB-5SI#S0 is strictly a 5 V device with absolute maximum V_CC of +7.0 V but minimum operating V_CC of 4.5 V. Its DC operating conditions specify VIH ≥ 2.2 V and VIL ≤ 0.8 V-designed for 5 V TTL logic levels. Using it with 3.3 V supplies risks insufficient noise margin, unreliable write operations, and potential damage due to VIH violation; a dedicated 3.3 V SRAM (e.g., IS61WV5128BLL) is required instead.

R1LP0408DSB-5SI#S0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 32-SOIC (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-TSOP II

R1LP0408DSB-5SI#S0 FAQ

1.How can I place an order for R1LP0408DSB-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LP0408DSB-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LP0408DSB-5SI#S0 reliable?

The price and inventory of R1LP0408DSB-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0408DSB-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LP0408DSB-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0408DSB-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LP0408DSB-5SI#S0?

R1LP0408DSB-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LP0408DSB-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LP0408DSB-5SI#S0?

For technical support, including R1LP0408DSB-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0408DSB-5SI#S0 requirements.

6.How does Aetrix verify that R1LP0408DSB-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LP0408DSB-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0408DSB-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LP0408DSB-5SI#S0?

All R1LP0408DSB-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0408DSB-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LP0408DSB-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LP0408DSB-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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