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Renesas R1LP0408DSB-7SI#B0
- Part No.:
- R1LP0408DSB-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.400", 10.16mm Width)
- Datasheet:
-
R1LP0408DSB-7SI#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 32TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,063
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Product details
Overview
R1LP0408DSB-7SI#B0 from Renesas Electronics is a 4-Mbit advanced low-power static RAM organized as 512-kword × 8-bit, operating on a single 5V supply (4.5–5.5V), with 70 ns max access time, 0.8–3 μA standby current at +25°C to +40°C, and rated for -40°C to +85°C industrial temperature range. It supports battery backup operation and is used in real-time data logging modules requiring non-volatile retention during power loss.
For engineers reviewing the R1LP0408DSB-7SI#B0 datasheet, R1LP0408DSB-7SI#B0 pinout, R1LP0408DSB-7SI#B0 application, or R1LP0408DSB-7SI#B0 equivalent, key selection criteria include industrial-grade temperature support, TSOP(II) 32-pin package compatibility, low-standby-current behavior under Vcc ≥ 2.0V data retention mode, and TTL-compatible I/O timing margins for legacy microcontroller interfaces.
Technical Context
The R1LP0408DSB-7SI#B0 implements a 2,048 × 2,048 memory matrix with full address decoding via A0–A18 inputs and bidirectional I/O0–I/O7 pins controlled by CS#, WE#, and OE# signals. Its timing architecture enforces equal read/write cycle times (tRC = tWC = 70 ns max) and guarantees output high-Z transitions within 25 ns (tOHZ/tCHZ) under industrial temperature conditions.
It features direct TTL-level compatibility on all inputs and outputs (VIH = 2.2V min, VOH = 2.4V @ -1mA), supports common data bus sharing via three-state output control, and maintains data integrity down to Vcc = 2.0V in retention mode with ICCDR ≤ 10 μA at +85°C - enabling seamless integration into battery-backed SRAM subsystems without external voltage supervisors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (512-kword × 8-bit) - provides sufficient buffer space for firmware patch storage or sensor history in embedded controllers. |
| Access time | 70 ns max - ensures compatibility with 14 MHz Z80 or 80C51-based systems using asynchronous bus protocols. |
| Supply voltage | 4.5–5.5 V - operates reliably across unregulated 5V rails common in industrial PLC backplanes. |
| Standby current | 0.8–3 μA at +25°C to +40°C - enables multi-year battery life in coin-cell–powered RTC+SRAM modules. |
| Operating temperature | -40°C to +85°C - certified for deployment in automotive body control units and outdoor metering equipment. |
| Data retention voltage | 2.0–5.5 V - allows retention during brown-out events without auxiliary power switching circuitry. |
| Package type | 400-mil 32-pin TSOP(II), PTSB0032DC-A - surface-mount compatible with standard reflow profiles and high-density PCB layouts. |
Pinout & Package
Package: 400-mil 32-pin plastic TSOP(II), footprint code PTSB0032DC-A (032PTY-A), tray packaging (117 pcs/tray).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply input | Primary 5V rail connection; decoupling capacitor must be placed within 5 mm for stable 70 ns timing. |
| Vss | Ground reference | Dedicated ground return path; requires low-inductance connection to minimize read/write noise coupling. |
| A0–A18 | Address inputs | 19-bit address bus supporting full 512-kword addressing; A18 selects upper/lower half of memory array. |
| I/O0–I/O7 | Bidirectional data bus | Three-state CMOS I/O pins; driven high-Z when CS# = VIH or OE# = VIH to prevent bus contention. |
| CS# | Chip select (active-low) | Enables internal buffers; controls entry into data retention mode when held high during low-Vcc conditions. |
| WE# | Write enable (active-low) | Initiates write cycle only when CS# is also low; timing overlap with CS# defines valid write window (tWP ≥ 50 ns). |
| OE# | Output enable (active-low) | Gates output drivers; asserts Dout only when CS# and OE# are both low, ensuring clean read strobe synchronization. |
Key Features
| Feature | Design Value |
|---|---|
| Single 5V supply operation | Eliminates need for dual-rail regulators in legacy 5V system designs, reducing BOM count and layout complexity. |
| Low standby power dissipation | Typical ISB = 0.8 μA at +25°C enables >10-year coin-cell operation in always-on backup memory applications. |
| TTL-compatible I/O levels | VIH = 2.2V min and VOL = 0.4V max ensure robust interfacing with 8-bit microcontrollers without level-shifting circuitry. |
| Equal access and cycle times | tAA = tRC = 70 ns max simplifies timing budget allocation in synchronous bus controllers with fixed wait-state logic. |
| Battery backup capability | Valid data retention at Vcc ≥ 2.0V with ICCDR ≤ 10 μA at +85°C removes requirement for external SRAM supervisor ICs. |
Applications
| Industrial Data Logger | Automotive Body Control Unit |
|---|---|
|
Use Scenario: Continuous capture of CAN bus diagnostic frames during vehicle ignition cycles, with data preserved across engine-off periods. IC Role / Device Role / Timing Role: Non-volatile buffer storing up to 512 KB of timestamped event logs; retains data during 12V battery dips below 3.0V. Use Value: Eliminates need for EEPROM wear-leveling or flash programming delays, enabling sub-millisecond log writes at full CAN bit rate. |
Use Scenario: Storing seat/mirror position presets and door lock status across vehicle power-down sequences. IC Role / Device Role / Timing Role: Battery-backed SRAM holding user configuration in BCM; accessed via 8-bit parallel bus from 8051 derivative MCU. Use Value: Guarantees zero-latency recall of settings on next power-up, meeting ISO 16750-2 cold-cranking voltage drop requirements. |
| Medical Infusion Pump Controller | Smart Electricity Meter |
|
Use Scenario: Maintaining therapy parameters and dose history during AC mains failure, backed by onboard LiMnO₂ cell. IC Role / Device Role / Timing Role: Safety-critical volatile memory holding last-delivered volume and alarm thresholds; powered directly from backup cell. Use Value: Meets IEC 62304 Class C software requirements by ensuring deterministic data persistence without firmware intervention. |
Use Scenario: Recording kWh consumption and tariff-switching timestamps during grid outages lasting hours or days. IC Role / Device Role / Timing Role: Tamper-resistant SRAM storing billing registers; isolated from main SoC via dedicated 5V LDO and discrete enable logic. Use Value: Achieves <1 μA total system standby current, extending supercapacitor hold-up time beyond EN50470-3 mandated 120-second minimum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-70ZSXI | 4-Mbit, 70 ns, 32-pin SOIC (not TSOP); higher ISB = 2 μA typical at +25°C; no data retention spec below 3.0V. | Preferred for through-hole prototyping or where board space permits wider SOIC footprint; unsuitable for battery-retention-critical designs. | Select only if TSOP-to-SOIC adapter is acceptable and Vcc ≥ 3.0V guaranteed during backup. |
| IS61LV25616AL-10TLI | 4-Mbit, 10 ns access, 44-pin TSOP; 3.3V-only supply (2.7–3.6V); ISB = 12 μA typical at +25°C. | Used in modern 3.3V FPGA co-processor buffers; incompatible with 5V bus systems and industrial temperature margin requirements. | Reject for 5V legacy systems; consider only in new 3.3V designs requiring faster access and accepting higher standby draw. |
Compared with CY62148EV30LL-70ZSXI and IS61LV25616AL-10TLI, the R1LP0408DSB-7SI#B0 uniquely delivers industrial-temperature-rated 5V operation, sub-μA standby, and validated 2.0V data retention - making it the sole choice for cost-sensitive, battery-backed 5V embedded systems where reliability trumps speed.
Availability
R1LP0408DSB-7SI#B0 is available at Aetrix Electronics and suitable for industrial data loggers, automotive body control units, and medical infusion pump controllers requiring stable component supply across extended product lifecycles.
Supply support for R1LP0408DSB-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP0408D Series was developed to deliver ultra-low-power, industrial-grade parallel SRAMs for battery-backed applications where data integrity during power interruption is mission-critical.
FAQ
What is the maximum operating temperature range supported by the R1LP0408DSB-7SI#B0?
The R1LP0408DSB-7SI#B0 is rated for continuous operation from -40°C to +85°C, as confirmed in the "Part Name Information" table on page 1 of the R10DS0104EJ0200 datasheet. This industrial temperature grade is explicitly assigned to all variants ending in "-7SI", including R1LP0408DSB-7SI#B0, and verified by DC/AC characteristics testing across that full range.
Does the R1LP0408DSB-7SI#B0 support true data retention at voltages below 3.0V?
Yes, the R1LP0408DSB-7SI#B0 guarantees data retention down to Vcc = 2.0V, as specified in the "Low Vcc Data Retention Characteristics" table (page 11). At 3.0V and +25°C, ICCDR is typically 0.8 μA, and retention remains valid up to +85°C with ICCDR ≤ 10 μA - enabling use with depleted alkaline or lithium primary cells.
What package type and footprint does the R1LP0408DSB-7SI#B0 use?
The R1LP0408DSB-7SI#B0 uses a 400-mil 32-pin plastic TSOP(II) package, identified as PTSB0032DC-A (032PTY-A) in Renesas documentation. It ships in trays (117 pcs/tray) and is distinct from the SOP variant (PRSP0032DF-A) used in "-DSP" part numbers.
Can the R1LP0408DSB-7SI#B0 be interfaced directly with a 5V TTL microcontroller without level shifters?
Yes, the R1LP0408DSB-7SI#B0 is fully TTL-compatible: VIH is defined as 2.2V min (with 5.0V Vcc), VOH is 2.4V min at -1mA, and VOL is 0.4V max at 2.1mA - matching standard 5V TTL logic thresholds. All inputs and outputs meet these specs per the "DC Operating Conditions" table (page 5).
What is the standby current specification for the R1LP0408DSB-7SI#B0 at +85°C?
At +85°C, the R1LP0408DSB-7SI#B0 has a maximum standby current (ISB1) of 10 μA, as stated in the "DC Characteristics" table (page 5). This value applies when CS# = VIH and all other inputs are within Vss to Vcc, and is critical for estimating battery lifetime in high-temperature deployments like under-hood automotive modules.
R1LP0408DSB-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP II
R1LP0408DSB-7SI#B0 FAQ
1.How can I place an order for R1LP0408DSB-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP0408DSB-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP0408DSB-7SI#B0 reliable?
The price and inventory of R1LP0408DSB-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP0408DSB-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LP0408DSB-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP0408DSB-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP0408DSB-7SI#B0?
R1LP0408DSB-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP0408DSB-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP0408DSB-7SI#B0?
For technical support, including R1LP0408DSB-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP0408DSB-7SI#B0 requirements.
6.How does Aetrix verify that R1LP0408DSB-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LP0408DSB-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP0408DSB-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LP0408DSB-7SI#B0?
All R1LP0408DSB-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP0408DSB-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP0408DSB-7SI#B0 part is unused and in its original packaging.
Return procedure for R1LP0408DSB-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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