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Renesas R1LP5256ESA-5SI#B1
- Part No.:
- R1LP5256ESA-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LP5256ESA-5SI#B1.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:581
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Product details
Overview
R1LP5256ESA-5SI#B1 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating from a single 4.5V–5.5V supply, with 55 ns access time, 0.6 µA typical standby current at 5.0V, and TTL-compatible I/O - deployed in battery-backed memory subsystems for industrial controllers and portable instrumentation.
For engineers reviewing the R1LP5256ESA-5SI#B1 datasheet, R1LP5256ESA-5SI#B1 pinout, R1LP5256ESA-5SI#B1 application, or R1LP5256ESA-5SI#B1 equivalent, key selection criteria include TSOP-28 package compatibility, no-refresh operation, low-voltage data retention down to 2.0V, and OR-tie capable three-state outputs for bus sharing.
Technical Context
The R1LP5256ESA-5SI#B1 implements a fully static CMOS memory architecture with asynchronous parallel interface, no internal clocks or refresh circuitry, and independent chip select (CS#), write enable (WE#), and output enable (OE#) controls. Its address decoding supports full 15-bit addressing (A0–A14) and bidirectional 8-bit data I/O (DQ0–DQ7).
It features dual-mode operation: active read/write cycles with tRC = 55 ns and tAA = 55 ns, and ultra-low-power data retention mode activated by high CS# and Vcc ≥ 2.0V, drawing only 0.6 µA typical at 25°C while preserving stored data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32k × 8-bit) - provides byte-wide storage for microcontroller-based systems without external data width expansion. |
| Access time | 55 ns - enables direct interfacing with legacy 8-bit and 16-bit MCUs running at ≤18 MHz system clock. |
| Supply voltage | 4.5 V to 5.5 V - compatible with standard 5V logic rails and tolerant of ±5% regulation drift. |
| Standby current | 0.6 µA typical at 5.0V/25°C - extends battery life in always-on backup memory applications beyond 10 years. |
| Data retention Vcc | 2.0 V minimum - retains memory contents during brown-out or battery-switchover without external supervision. |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifting requirements when connecting to 5V microcontrollers or FPGAs. |
| Package | 28-pin TSOP (8mm × 13.4mm) - surface-mount footprint optimized for space-constrained industrial PCB layouts. |
Pinout & Package
Package: 28-pin plastic TSOP (Thin Small Outline Package), 8 mm × 13.4 mm body, 0.55 mm lead pitch, JEDEC MO-153 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 4.5–5.5V supply rail; decoupling capacitor required within 5 mm for stable operation. |
| Vss (GND) | Ground reference | Common return path for all signals and power; must be connected to low-impedance system ground plane. |
| A0–A14 | Address inputs | 15-bit unidirectional address bus supporting full 32k-word addressing; no latching required. |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit common bus; high-impedance state when CS# high or OE# high, enabling multi-device bus sharing. |
| CS# | Chip select (active low) | Enables device operation; high state forces standby mode and activates data retention below 2.0V Vcc. |
| WE# | Write enable (active low) | Controls write cycle initiation; low with CS# low writes data; high with CS# low enables read or high-Z output. |
| OE# | Output enable (active low) | Gates output drivers; prevents bus contention when multiple SRAMs share DQ lines in OR-tied configurations. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead, simplifying firmware and reducing BOM count in embedded systems. |
| OR-tie capability | Three-state outputs allow multiple R1LP5256ESA-5SI#B1 devices to share a single 8-bit data bus without external bus transceivers. |
| Low-voltage data retention | Maintains valid memory contents at Vcc ≥ 2.0V and ambient ≤ +85°C, enabling seamless switchover to backup battery without data loss. |
| TTL-compatible signaling | Direct interface with legacy 5V microcontrollers (e.g., 8051, PIC18F, MSP430 with 5V IO) without level translators or pull-up resistors. |
| Easy memory expansion | CS#-based chip selection supports daisy-chained or decoded address mapping for multi-SRAM systems up to 1 Mbyte. |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and runtime configuration in programmable logic controllers with intermittent power. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical operational parameters during main power loss. Use Value: 0.6 µA standby current and 2.0V data retention ensure >5-year battery-backed retention without periodic refresh or supervision. |
Use Scenario: Preserving patient-specific therapy settings and device history logs in portable infusion pumps and ECG monitors. IC Role / Device Role / Timing Role: Battery-backed SRAM serving as secure, fast-access parameter store between power cycles. Use Value: 55 ns access time enables immediate parameter recall on wake-up; TSOP-28 footprint fits compact handheld enclosures. |
| Automotive Body Control Module | Test Equipment Configuration Memory |
Use Scenario: Holding door lock status, lighting profiles, and seat position presets in 12V automotive BCMs with wide temperature range. IC Role / Device Role / Timing Role: High-reliability parallel SRAM interfaced directly to 8-bit automotive MCU via dedicated address/data bus. Use Value: -40°C to +85°C operation and 5.5V tolerance accommodate automotive load-dump transients without latch-up or data corruption. |
Use Scenario: Storing instrument-specific calibration coefficients and user-defined test sequences in benchtop multimeters and signal generators. IC Role / Device Role / Timing Role: Fast-access local memory for rapid recall of setup states without relying on slower flash or EEPROM. Use Value: No-refresh operation avoids timing conflicts during high-speed automated test sequences; 55 ns read latency ensures deterministic response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3V only, 44-pin TSOP | Higher bandwidth but incompatible voltage and data width; requires PCB redesign and level translation. | Select only if migrating to 3.3V system with wider data path and faster timing budget. |
| AS6C4008-55PCN | 256K × 16 organization, 55 ns access, 5V supply, 44-pin SOJ | Different pinout, larger package, and 16-bit interface limit drop-in replacement; no data retention spec below 4.5V. | Consider for legacy 5V systems needing higher density, but verify board layout and retention requirements. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LP5256ESA-5SI#B1 offers unique 8-bit bus compatibility, proven 2.0V data retention, and TSOP-28 footprint - making it optimal for cost-sensitive, space-constrained 5V designs requiring long-term battery backup without refresh management.
Availability
R1LP5256ESA-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for R1LP5256ESA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP5256E Series was designed specifically for low-power, battery-operated memory applications where simplicity, reliability, and long-term data retention outweigh raw speed - targeting industrial automation, portable medical, and automotive subsystems.
FAQ
What is the maximum operating temperature range for the R1LP5256ESA-5SI#B1?
The R1LP5256ESA-5SI#B1 is rated for continuous operation from –40°C to +85°C ambient temperature, validated per its DC and AC characteristics tables and qualified under industrial-grade reliability standards. This range applies to both active operation and data retention modes, with standby current specified up to +85°C.
Does the R1LP5256ESA-5SI#B1 require an external clock or refresh signal?
No, the R1LP5256ESA-5SI#B1 is a fully static RAM with no internal clock or refresh circuitry. It retains data indefinitely as long as power is applied and CS# is held high in standby, or low during active read/write cycles - eliminating timing-critical refresh overhead in firmware or hardware design.
Can the R1LP5256ESA-5SI#B1 be used with a 3.3V microcontroller?
The R1LP5256ESA-5SI#B1 requires a 4.5V–5.5V supply and is not 3.3V-compatible. Its inputs are TTL-level (VIH ≥ 2.2V), but Vcc must be ≥4.5V for guaranteed operation. Interfacing with 3.3V MCUs requires level-shifting on all address, control, and data lines - or selection of a native 3.3V SRAM such as the IS61LV25616AL.
What is the meaning of "#B1" in the R1LP5256ESA-5SI#B1 part number?
The "#B1" suffix in R1LP5256ESA-5SI#B1 denotes the assembly site revision code, indicating a specific manufacturing location and process iteration per Renesas's internal tracking. It does not affect electrical specifications, timing, or package dimensions - all R1LP5256ESA-5SI#B* variants share identical functional and parametric behavior.
How does the R1LP5256ESA-5SI#B1 achieve data retention at 2.0V?
The R1LP5256ESA-5SI#B1 enters data retention mode when CS# is held high and Vcc drops to ≥2.0V. In this state, internal buffers are disabled, leakage paths minimized, and the memory array maintained in static hold - drawing only 0.6 µA typical at 25°C while preserving all 256Kb of stored data without external intervention.
R1LP5256ESA-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LP5256ESA-5SI#B1 FAQ
1.How can I place an order for R1LP5256ESA-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP5256ESA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP5256ESA-5SI#B1 reliable?
The price and inventory of R1LP5256ESA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP5256ESA-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LP5256ESA-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP5256ESA-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP5256ESA-5SI#B1?
R1LP5256ESA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP5256ESA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP5256ESA-5SI#B1?
For technical support, including R1LP5256ESA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP5256ESA-5SI#B1 requirements.
6.How does Aetrix verify that R1LP5256ESA-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LP5256ESA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP5256ESA-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LP5256ESA-5SI#B1?
All R1LP5256ESA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP5256ESA-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP5256ESA-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LP5256ESA-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LP5256ESA-5SI#B1 Tags
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