My Inquiry
My Account
Renesas R1LP5256ESP-5SI#B1
- Part No.:
- R1LP5256ESP-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-SOIC (0.330", 8.40mm Width)
- Datasheet:
-
R1LP5256ESP-5SI#B1.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOP
- Quantity:
- Payment:
- Shipping:
Inventory:936
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LP5256ESP-5SI#B1 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating on a single 4.5V–5.5V supply, with 55 ns access time, 0.6 µA typical standby current at 5.0V, and TTL-compatible I/O - deployed in battery-backed memory subsystems for industrial controllers and portable instrumentation.
For engineers reviewing the R1LP5256ESP-5SI#B1 datasheet, R1LP5256ESP-5SI#B1 pinout, R1LP5256ESP-5SI#B1 application, or R1LP5256ESP-5SI#B1 equivalent, key selection criteria include guaranteed -40°C to +85°C operation, no-refresh architecture, CS#-controlled data retention down to 2.0V, three-state OR-tie capable outputs, and 28-pin SOP packaging with magazine tube delivery.
Technical Context
The R1LP5256ESP-5SI#B1 implements a fully static CMOS memory array with asynchronous parallel interface logic, featuring independent chip select (CS#), output enable (OE#), and write enable (WE#) controls. Its address decoding supports full 15-bit addressing (A0–A14) and common bidirectional DQ0–DQ7 I/O lines.
It operates without clocks or refresh cycles, relying on static latch cells fabricated in Renesas's 0.15 µm CMOS process. Standby mode is activated by high CS#, reducing current to ≤2 µA over temperature while retaining data at Vcc ≥ 2.0V - critical for backup power integrity in fail-safe systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32k × 8-bit) - supports byte-wide data bus interfacing without external multiplexing |
| Access time | 55 ns - enables direct connection to legacy microcontrollers with ≤18 MHz bus timing |
| Supply voltage | 4.5 V to 5.5 V - compatible with standard 5V logic rails and tolerant of ±10% regulation variation |
| Standby current | 0.6 µA typical at 5.0V/25°C - extends battery life in always-on backup mode beyond 10 years |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade embedded control and automotive body electronics |
| Data retention VCC | 2.0 V minimum - maintains stored values during brown-out or backup battery switchover |
| I/O compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) - ensures interoperability with 74LS, 80Cxx, and FPGA I/O banks |
Pinout & Package
Package: 450-mil 28-pin plastic SOP (Small Outline Package), lead-free and RoHS-compliant, with 1.27 mm pitch and standard JEDEC MS-013AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 4.5–5.5 V supply rail; decoupling capacitor required within 10 mm |
| Vss (GND) | Ground reference | Common return path for all signals; must be connected before Vcc during power-up |
| A0–A14 | Address inputs | 15-bit unidirectional address bus; latched on falling edge of CS# during read/write setup |
| DQ0–DQ7 | Bi-directional data I/O | Shared data bus with three-state control via OE# and CS#; supports OR-tie for memory expansion |
| CS# | Chip select (active low) | Enables device operation; high state forces outputs to high-Z and activates ultra-low-power retention mode |
| WE# | Write enable (active low) | Controls write cycle initiation; must be low concurrently with CS# to store data on DQ lines |
| OE# | Output enable (active low) | Gates read data onto DQ lines; prevents bus contention when multiple devices share same data bus |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level timing constraints and external refresh circuitry - simplifies firmware and reduces BOM count |
| 0.6 µA standby current (typ.) | Enables >10-year data retention on coin-cell batteries (e.g., CR2032) in maintenance-free applications |
| CS#-controlled data retention | Automatically enters low-power retention at Vcc ≥ 2.0 V when CS# = high - no software or external logic required |
| Three-state OR-tie outputs | Allows direct wire-OR connection of multiple R1LP5256ESP-5SI#B1 devices for seamless memory expansion without bus transceivers |
| TTL-compatible I/O | Direct interface with legacy 5V microcontrollers (e.g., 8051, PIC18F), CPLDs, and industrial PLC I/O modules |
Applications
| Industrial Programmable Logic Controllers | Portable Medical Instrumentation |
|---|---|
Use Scenario: Non-volatile program storage and real-time data logging in DIN-rail mounted PLCs with battery-backed SRAM retention. IC Role / Device Role / Timing Role: Primary working memory holding ladder logic variables, I/O status maps, and timestamped event buffers. Use Value: 55 ns access time meets deterministic scan-cycle deadlines; 0.6 µA standby current extends backup battery life beyond 7 years. |
Use Scenario: Patient parameter buffering and calibration data storage in handheld ECG monitors powered by rechargeable Li-ion cells. IC Role / Device Role / Timing Role: High-reliability scratchpad memory preserving waveform snapshots and sensor calibration coefficients during power transitions. Use Value: Data retention down to 2.0 V ensures zero data loss during battery swap or low-voltage brown-out events. |
| Automotive Body Control Modules | Smart Energy Metering Systems |
Use Scenario: Storing door lock states, mirror position presets, and lighting configuration in BCMs exposed to under-hood thermal cycling. IC Role / Device Role / Timing Role: Temperature-stable SRAM for volatile configuration registers requiring guaranteed -40°C to +85°C operation. Use Value: Qualified industrial temperature range and 0.15 µm CMOS process ensure <1 FIT failure rate in 15-year vehicle lifetime. |
Use Scenario: Holding tariff schedules, demand-response logs, and tamper-event timestamps in ANSI C12.20-certified utility meters. IC Role / Device Role / Timing Role: Secure, low-leakage memory for regulatory-critical audit trails with battery-assisted retention during grid outages. Use Value: ≤2 µA max standby current at +85°C enables 10+ year backup battery service life per ANSI C12.22 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3 V only, 44-pin TSOP | Higher bandwidth but incompatible voltage and pinout; requires PCB redesign and level-shifting | Select only if migrating to 3.3 V systems and needing wider data path - not drop-in |
| AS6C4008-55PCN | 256K × 8, 55 ns, 2.7–5.5 V, 28-pin SOP, 2 µA standby (typ.) | Wider Vcc range and same package, but 3× higher standby current erodes battery life in long-term backup | Acceptable for cost-sensitive 5V designs where battery life >3 years is sufficient |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LP5256ESP-5SI#B1 uniquely balances 55 ns speed, 0.6 µA ultra-low standby, and strict 5V TTL compatibility in a drop-in 28-pin SOP - making it optimal for legacy industrial upgrades requiring zero layout change and maximum battery longevity.
Availability
R1LP5256ESP-5SI#B1 is available at Aetrix Electronics and suitable for industrial programmable logic controllers, portable medical instrumentation, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for R1LP5256ESP-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP5256E Series was designed specifically for battery-operated and battery-backup memory applications demanding zero-refresh operation, ultra-low standby current, and robust 5V TTL interfacing - targeting industrial control, medical, and automotive subsystems.
FAQ
What is the guaranteed operating temperature range for the R1LP5256ESP-5SI#B1?
The R1LP5256ESP-5SI#B1 is specified for continuous operation from -40°C to +85°C ambient temperature, validated per Renesas's industrial qualification standards. This range covers under-hood automotive environments, factory-floor PLCs, and outdoor metering enclosures. The R1LP5256ESP-5SI#B1 maintains full AC and DC parametric compliance across this range, including 55 ns access time and ≤2 µA standby current at +85°C.
Does the R1LP5256ESP-5SI#B1 require a clock signal or refresh circuitry?
No, the R1LP5256ESP-5SI#B1 is a fully static RAM and requires neither a clock nor periodic refresh cycles. Its internal latches retain data indefinitely as long as Vcc remains within specification and CS# is held high in standby. This eliminates timing-critical refresh overhead in microcontroller firmware and removes external refresh logic - a key advantage over DRAM or pseudo-SRAM solutions.
Can the R1LP5256ESP-5SI#B1 retain data when Vcc drops below 4.5 V?
Yes, the R1LP5256ESP-5SI#B1 guarantees data retention down to Vcc = 2.0 V when CS# is held high, per its Low Vcc Data Retention Characteristics table. At 3.0 V, typical retention current is 0.6 µA at 25°C - enabling multi-year backup on small coin cells. This behavior is intrinsic to the device and requires no external control or configuration.
Is the R1LP5256ESP-5SI#B1 pin-compatible with other 28-pin SOP SRAMs like the 62256 family?
No - while the R1LP5256ESP-5SI#B1 uses a standard 28-pin SOP footprint, its pinout differs from legacy 62256-style SRAMs. Specifically, A10–A14 and control signals (CS#, WE#, OE#) are assigned to different pins. Direct replacement requires PCB layout revision; refer to the official pin arrangement diagram on page 2 of R10DS0268EJ0200 Rev.2.00 for exact mapping.
What is the maximum capacitive load the R1LP5256ESP-5SI#B1 can drive on its DQ lines?
The R1LP5256ESP-5SI#B1 is characterized with CL = 30 pF in AC testing (page 6), and its output drivers are rated for VOH ≥ 2.4 V at IOH = -1 mA and VOL ≤ 0.4 V at IOL = 2 mA. For reliable 55 ns timing, total trace + load capacitance should remain ≤40 pF. Exceeding this may degrade tOH, tOLZ, or cause setup/hold violations in high-speed interfaces.
R1LP5256ESP-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-SOIC (0.330", 8.40mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOP
R1LP5256ESP-5SI#B1 FAQ
1.How can I place an order for R1LP5256ESP-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP5256ESP-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP5256ESP-5SI#B1 reliable?
The price and inventory of R1LP5256ESP-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP5256ESP-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LP5256ESP-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP5256ESP-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP5256ESP-5SI#B1?
R1LP5256ESP-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP5256ESP-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP5256ESP-5SI#B1?
For technical support, including R1LP5256ESP-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP5256ESP-5SI#B1 requirements.
6.How does Aetrix verify that R1LP5256ESP-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LP5256ESP-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP5256ESP-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LP5256ESP-5SI#B1?
All R1LP5256ESP-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP5256ESP-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP5256ESP-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LP5256ESP-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LP5256ESP-5SI#B1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
