Renesas R1LP5256ESP-5SI#S0
- Part No.:
- R1LP5256ESP-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-SOIC (0.330", 8.40mm Width)
- Datasheet:
-
R1LP5256ESP-5SI#S0.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,144
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LP5256ESP-5SI#S0 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating from a single 4.5V–5.5V supply with 55 ns access time, 0.6 µA typical standby current at 5.0V, and TTL-compatible I/O-designed for battery-backed memory systems in industrial controllers and portable instrumentation.
For engineers reviewing the R1LP5256ESP-5SI#S0 datasheet, R1LP5256ESP-5SI#S0 pinout, R1LP5256ESP-5SI#S0 application, or R1LP5256ESP-5SI#S0 equivalent, key selection criteria include no-refresh operation, OR-tie capable three-state outputs, CS#-controlled data retention down to 2.0V, and compatibility with legacy 28-pin SOP-based memory interfaces.
Technical Context
The R1LP5256ESP-5SI#S0 implements a fully static CMOS memory architecture with no internal clocks or refresh circuitry, relying on address decoding and control logic (CS#, WE#, OE#) to manage read/write cycles and output enable states. Its block diagram confirms direct address-to-array mapping via row/column decoders and sense/write amplifiers without pipeline or cache layers.
All timing parameters-including tAA (55 ns), tOE (30 ns), tWP (40 ns), and tWHZ (20 ns)-are specified across -40°C to +85°C at Vcc = 4.5–5.5V, with input thresholds VIH ≥ 2.2V and VIL ≤ 0.8V ensuring robust TTL-level interoperability in mixed-voltage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32k × 8-bit); supports byte-wide data bus without external demultiplexing |
| Access time | 55 ns max; enables direct interface with 12–15 MHz microcontrollers without wait states |
| Supply voltage | 4.5V–5.5V; compatible with standard 5V logic rails and tolerant of ±5% regulation drift |
| Standby current | 0.6 µA typical at 5.0V/25°C; extends battery life in always-on backup mode |
| Data retention Vcc | 2.0V min; maintains stored contents during brown-out or battery-swapping events |
| I/O interface | TTL-compatible inputs/outputs; eliminates level-shifter requirements in 5V systems |
| Output drive | VOH ≥ 2.4V @ -1mA, VOL ≤ 0.4V @ 2mA; ensures noise margin >0.4V under load |
Pinout & Package
Package: 450-mil 28-pin plastic SOP (Small Outline Package), surface-mount, JEDEC MS-012AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | +4.5V to +5.5V main supply rail; bypass capacitor required near pin |
| Vss (GND) | Ground reference | Common return path for all signals and power; must be low-impedance |
| A0–A14 | Address inputs | 15-bit address bus supporting full 32k-word addressing; no multiplexing |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state control; supports OR-tie for memory expansion |
| CS# | Chip select (active-low) | Enables device operation; controls data retention mode when high |
| WE# | Write enable (active-low) | Initiates write cycle when CS# is active; latches DQ inputs on falling edge |
| OE# | Output enable (active-low) | Gates read data onto DQ lines; prevents bus contention during multi-device sharing |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead in embedded firmware |
| Low standby current (0.6 µA) | Reduces quiescent power in battery-backed applications by >99% vs. conventional SRAMs |
| CS#-controlled data retention | Preserves memory contents at Vcc ≥ 2.0V while drawing sub-µA current-no external hold circuit needed |
| Three-state outputs with OR-tie capability | Allows parallel connection of multiple R1LP5256ESP-5SI#S0 devices on shared data bus without external logic |
| TTL-compatible I/O | Direct interface with legacy 5V microcontrollers (e.g., 8051, PIC18F, AVR) without level translation |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and operational logs in programmable logic controllers with intermittent power loss. IC Role / Device Role / Timing Role: Non-volatile data buffer maintaining state during brief AC outages using battery backup. Use Value: 0.6 µA standby current extends coin-cell life to >5 years; 55 ns access supports deterministic scan-cycle timing. |
Use Scenario: Retaining patient-specific therapy settings and usage history in portable infusion pumps between charging cycles. IC Role / Device Role / Timing Role: Battery-backed memory holding critical configuration data during shutdown. Use Value: Data retention down to 2.0V ensures integrity during brown-out; TTL compatibility simplifies interface to MCU peripherals. |
| Test Equipment Configuration Memory | Avionics Maintenance Logger |
Use Scenario: Holding instrument setup profiles and calibration offsets in handheld multimeters and oscilloscopes. IC Role / Device Role / Timing Role: Static RAM providing fast, deterministic read/write for user-accessible configuration storage. Use Value: No-refresh operation removes firmware complexity; 28-pin SOP footprint matches legacy PCB layouts. |
Use Scenario: Recording flight-hour metrics and fault codes in line-replaceable units (LRUs) where EMI resilience and long-term reliability are mandatory. IC Role / Device Role / Timing Role: Radiation-tolerant (per design heritage) memory node in DO-254-compliant data loggers. Use Value: -40°C to +85°C operation meets extended environmental qualification; CS#-controlled retention avoids external hold signal routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3V only, 44-pin TSOP | Higher bandwidth but incompatible voltage and pinout; requires PCB redesign | Select only if migrating to 3.3V system with wider data path and faster timing budget |
| AS6C4008-55PCN | 55 ns access, 5V supply, 0.8 µA standby, 28-pin SOP, but no guaranteed data retention below 4.5V | Lacks low-Vcc retention capability; unsuitable for true battery-backup use cases | Acceptable for main-power-only applications where backup is handled externally |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LP5256ESP-5SI#S0 uniquely combines 5V operation, 28-pin SOP compatibility, sub-µA standby, and validated 2.0V data retention-making it the only drop-in solution for legacy 5V industrial memory upgrades requiring battery backup integrity.
Availability
R1LP5256ESP-5SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and test equipment configuration memory requiring stable component supply across extended product lifecycles.
Supply support for R1LP5256ESP-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LP5256E Series was developed to deliver ultra-low-power, no-refresh SRAM for battery-critical applications-targeting industrial automation, portable medical instruments, and legacy-system memory replacement where reliability and pin compatibility are paramount.
FAQ
What is the minimum supply voltage for data retention in R1LP5256ESP-5SI#S0?
The R1LP5256ESP-5SI#S0 guarantees data retention down to 2.0V Vcc when CS# is held high, as confirmed in the Low Vcc Data Retention Characteristics table (Page 11). At 3.0V, typical retention current is 0.6 µA at 25°C-enabling reliable operation during brown-out or battery-swapping scenarios without external hold circuitry.
Is R1LP5256ESP-5SI#S0 pin-compatible with older 28-pin SRAMs like the 62256?
Yes, the R1LP5256ESP-5SI#S0 uses the industry-standard 28-pin SOP footprint and identical pin functions (A0–A14, DQ0–DQ7, CS#, WE#, OE#, Vcc, GND) as the 62256 family. However, its 55 ns access time and lower standby current represent performance improvements-not functional deviations-making it a direct drop-in replacement in most 5V designs.
Does R1LP5256ESP-5SI#S0 require external refresh circuitry?
No, the R1LP5256ESP-5SI#S0 is a fully static RAM with no internal refresh requirement. Its architecture relies solely on address and control signals (CS#, WE#, OE#) to initiate read/write operations-eliminating the need for refresh timers, counters, or dedicated refresh cycles in firmware or hardware.
What is the maximum operating temperature range for R1LP5256ESP-5SI#S0?
The R1LP5256ESP-5SI#S0 is rated for continuous operation from -40°C to +85°C, as specified in the Ordering Information and Absolute Maximum Ratings sections. All AC and DC parameters-including 55 ns access time and 0.6 µA standby current-are guaranteed across this full industrial temperature range.
Can R1LP5256ESP-5SI#S0 outputs be wired together for memory expansion?
Yes, the R1LP5256ESP-5SI#S0 features three-state outputs with OR-tie capability, allowing multiple devices to share the same DQ0–DQ7 bus. When OE# is high (disabled), outputs enter high-impedance state-preventing contention. This enables straightforward memory expansion using CS# decoding without external bus transceivers.
R1LP5256ESP-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-SOIC (0.330", 8.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOP
R1LP5256ESP-5SI#S0 FAQ
1.How can I place an order for R1LP5256ESP-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LP5256ESP-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LP5256ESP-5SI#S0 reliable?
The price and inventory of R1LP5256ESP-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LP5256ESP-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LP5256ESP-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LP5256ESP-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LP5256ESP-5SI#S0?
R1LP5256ESP-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LP5256ESP-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LP5256ESP-5SI#S0?
For technical support, including R1LP5256ESP-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LP5256ESP-5SI#S0 requirements.
6.How does Aetrix verify that R1LP5256ESP-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LP5256ESP-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LP5256ESP-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LP5256ESP-5SI#S0?
All R1LP5256ESP-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LP5256ESP-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LP5256ESP-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LP5256ESP-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LP5256ESP-5SI#S0 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

