Renesas R1LV0108ESA-5SI#B0

Overview

R1LV0108ESA-5SI#B0 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, operating on a single 2.7–3.6 V supply and featuring 0.6 µA typical standby current at 3.0 V. It uses TTL-compatible I/O, supports easy memory expansion via dual chip select (CS1# and CS2), and is designed for battery-backed or low-voltage embedded systems requiring non-refresh, pin-compatible SRAM replacement.

For engineers reviewing the R1LV0108ESA-5SI#B0 datasheet, R1LV0108ESA-5SI#B0 pinout, R1LV0108ESA-5SI#B0 application, or R1LV0108ESA-5SI#B0 equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), sTSOP-32 package compatibility, data retention down to 2.0 V, and OR-tie capable three-state outputs for bus sharing.

Technical Context

The R1LV0108ESA-5SI#B0 implements a full CMOS static memory architecture with independent column/row decoders, sense/write amplifiers, and address/data buffers-no internal clocks or refresh circuitry required. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping in multi-bank systems.

It supports asynchronous read/write cycles with guaranteed timing across –40°C to +85°C, including tAA = 55 ns, tOE = 30 ns, and tWP = 45 ns. Data retention mode is activated either by pulling CS2 ≤ 0.2 V or CS1# ≥ Vcc–0.2 V while maintaining Vcc ≥ 2.0 V, drawing only 0.6 µA typical at 25°C.

Key Specifications

Pinout & Package

Package: 32-pin sTSOP (8 mm × 13.4 mm, normal-bend type, PTSA0032KB-A).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62128EV30LL-55ZSXIT and IS61LV25616AL-10TLI, the R1LV0108ESA-5SI#B0 uniquely balances industrial temperature support, sub-1 µA standby, and 2.0 V data retention in a compact 32-pin sTSOP-making it optimal for space- and energy-constrained edge nodes where reliability during voltage transients is critical.

Availability

R1LV0108ESA-5SI#B0 is available at Aetrix Electronics and suitable for industrial automation, portable medical instrumentation, automotive event logging, and smart utility metering requiring stable component supply across extended product lifecycles.

Supply support for R1LV0108ESA-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0108E Series was developed to deliver high-density, low-power SRAM for battery-operated and thermally demanding embedded systems-emphasizing simplicity, reliability, and long-term supply stability.

FAQ

What is the maximum operating frequency supported by R1LV0108ESA-5SI#B0?

The R1LV0108ESA-5SI#B0 does not use a clock signal and operates asynchronously. Its 55 ns access time corresponds to a maximum effective bus frequency of approximately 18 MHz in continuous read cycles. Timing margins must account for address setup (tAS = 0 ns), output hold (tOH = 5 ns), and chip deselect recovery (tCHZ1 = 20 ns) per the AC characteristics table on page 8 of the datasheet.

Does R1LV0108ESA-5SI#B0 require external refresh circuitry?

No, the R1LV0108ESA-5SI#B0 is a true static RAM and contains no capacitive storage cells. It retains data indefinitely as long as power is applied and all inputs meet valid logic levels-no refresh cycles, timers, or external support circuitry are needed. This eliminates timing-critical refresh overhead in real-time systems.

Can R1LV0108ESA-5SI#B0 be used with a 5 V microcontroller interface?

R1LV0108ESA-5SI#B0 inputs are TTL-compatible (VIH = 2.0 V min, VIL = 0.6 V max), so they accept 5 V logic high signals safely. However, its outputs swing only to Vcc–0.5 V (max 3.1 V at 3.6 V supply), requiring a level translator or pull-up resistor network to drive 5 V-tolerant inputs reliably. Direct connection may cause marginal VIH margin in noisy environments.

What is the significance of the "SI" suffix in R1LV0108ESA-5SI#B0?

The "SI" in R1LV0108ESA-5SI#B0 denotes the industrial temperature grade (–40°C to +85°C), as confirmed in the Ordering Information table on page 2 of the datasheet. This distinguishes it from the commercial-grade "SR" variant (0°C to +70°C) and ensures qualification for deployment in harsh thermal environments such as factory floors or outdoor metering enclosures.

How does R1LV0108ESA-5SI#B0 enter data retention mode?

R1LV0108ESA-5SI#B0 enters data retention mode when either CS2 is pulled ≤ 0.2 V (low) or CS1# is driven ≥ Vcc–0.2 V (high), while maintaining Vcc ≥ 2.0 V. In this state, internal buffers are disabled and standby current drops to 0.6 µA typical, preserving memory contents without external control logic or clock gating.