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Renesas R1LV0108ESA-5SI#B1
- Part No.:
- R1LV0108ESA-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV0108ESA-5SI#B1.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,212
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Product details
Overview
R1LV0108ESA-5SI#B1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, operating on a single 2.7–3.6 V supply and rated for –40°C to +85°C industrial temperature range. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for easy memory expansion in battery-backed or portable embedded systems.
For engineers reviewing the R1LV0108ESA-5SI#B1 datasheet, R1LV0108ESA-5SI#B1 pinout, R1LV0108ESA-5SI#B1 application, or R1LV0108ESA-5SI#B1 equivalent, key selection criteria include standby current (0.6 µA typical at 3.0 V), sTSOP-32 package footprint, data retention down to 2.0 V, and compatibility with simple parallel bus interfaces requiring no clock or timing control logic.
Technical Context
This LPSRAM implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS/TFT process, eliminating refresh cycles and enabling deterministic read/write timing. Its dual chip select architecture (CS1# active-low, CS2 active-high) supports hierarchical memory mapping and seamless bank expansion without external logic.
The device uses common data I/O (DQ0–DQ7) with three-state outputs enabled by OE#, and write operations are controlled by WE# with address latching via A0–A16. Standby mode is entered when CS2 is low or both CS2 is high and CS1# is high - enabling ultra-low power retention at 0.6 µA (25°C) while preserving data down to VCC = 2.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 131,072 words × 8 bits = 1 Mbit; supports byte-wide parallel data transfers without width conversion logic. |
| Access time | 55 ns max; enables direct interface with microcontrollers and FPGAs running ≤18 MHz synchronous bus clocks. |
| Supply voltage | 2.7–3.6 V; compatible with 3.3 V logic rails and battery-powered systems with brown-out tolerance. |
| Standby current | 0.6 µA typical at 3.0 V and 25°C; extends battery life in always-on backup memory applications. |
| Data retention VCC | 2.0 V min; maintains stored data during deep sleep or partial power loss without external capacitor hold-up. |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade deployment in automotive infotainment, PLCs, and medical portables. |
| Package | 32-pin sTSOP (8 mm × 13.4 mm, normal-bend); surface-mount compatible with standard reflow profiles and space-constrained PCBs. |
Pinout & Package
Package: 32-pin plastic sTSOP (PTSA0032KB-A), 8 mm × 13.4 mm body, normal-bend lead form, tray packaging (234 pcs/tray).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131,072-word addressing; no multiplexing required. |
| DQ0–DQ7 | Bi-directional data I/O | Common 8-bit data bus; OE# controls output enable; internal bus contention prevention via three-state drivers. |
| CS1# | Chip select 1 (active low) | Primary enable; must be low with CS2 high for read/write; high or CS2 low places device in standby. |
| CS2 | Chip select 2 (active high) | Secondary enable; used with CS1# for hierarchical decoding; also controls data retention mode when low. |
| WE# | Write enable (active low) | Asserted low during write cycles; timing-critical for tWP (45 ns min) and tAW (50 ns min) compliance. |
| OE# | Output enable (active low) | Enables DQ outputs during read; prevents bus contention when high or during write cycles. |
| Vcc | Power supply | Single 2.7–3.6 V supply; decoupling required per JEDEC standards for noise immunity. |
| Vss | Ground | Signal and power ground reference; separate Vss pin ensures stable reference for I/O and core logic. |
| NC | No connect | Pin 1 (sTSOP top-left corner) is unconnected; must remain floating or tied to ground per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static operation eliminates DRAM-style refresh circuitry, reducing MCU firmware overhead and system complexity. |
| TTL-compatible I/O | VIH = 2.0 V min, VIL = 0.6 V max; interoperable with legacy 5 V-tolerant microcontrollers and level-shifter-free 3.3 V logic families. |
| OR-tie capability | Three-state outputs allow multiple R1LV0108ESA-5SI#B1 devices to share a common data bus without external bus transceivers. |
| Dual chip select logic | CS1# (active low) and CS2 (active high) enable flexible memory banking and reduce address decoder gate count in multi-SRAM systems. |
| Low-voltage data retention | Maintains valid data at VCC ≥ 2.0 V with ICCDR ≤ 10 µA at +85°C; supports graceful shutdown and nonvolatile backup without external NVSRAM. |
Applications
| Industrial PLC Data Buffer | Portable Medical Device Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings and control state history in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Primary volatile data buffer holding runtime variables, I/O image tables, and diagnostic logs with deterministic 55 ns read/write latency. Use Value: Enables uninterrupted operation during brief AC line dips (via 2.0 V data retention) and reduces thermal load with 0.6 µA standby current in idle scan cycles. |
Use Scenario: Battery-powered handheld ECG monitors requiring persistent waveform storage between wireless transmission bursts. IC Role / Device Role / Timing Role: Low-power SRAM storing digitized analog samples prior to Bluetooth LE packetization; interfaced directly to ADC and MCU parallel bus. Use Value: Eliminates refresh overhead and supports >10-year coin-cell battery life in standby due to sub-µA ISB1 current at room temperature. |
| Automotive Infotainment Cache | POS Terminal Transaction Log |
Use Scenario: Caching navigation map tiles and UI assets in vehicle head units exposed to under-hood thermal cycling (–40°C to +85°C). IC Role / Device Role / Timing Role: High-reliability cache memory mapped into ARM Cortex-A8/A9 memory space; accessed via 8-bit parallel bus with OE#/WE# handshaking. Use Value: Industrial temperature rating and sTSOP mechanical robustness ensure long-term reliability without derating; 55 ns access sustains UI responsiveness during concurrent CAN bus activity. |
Use Scenario: Secure transaction buffering in retail point-of-sale terminals where power loss during credit card processing must not corrupt pending records. IC Role / Device Role / Timing Role: Write-through buffer holding encrypted transaction packets before EEPROM commit; powered from regulated 3.3 V rail with independent Vcc monitoring. Use Value: 2.0 V data retention threshold allows safe capture of final transaction even during sudden 3.3 V rail collapse, preventing financial data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns access time, 3.3 V only (3.135–3.465 V), 44-pin TSOP-II; higher speed but narrower Vcc range and larger footprint. | Suitable for high-speed control loops but incompatible with 2.7 V battery operation or sTSOP board space constraints. | Select only if system requires <10 ns access and guarantees tight 3.3 V regulation; verify PCB pad compatibility with 44-pin TSOP-II. |
| AS6C1008-55PCN | 55 ns access, 2.7–3.6 V, 32-pin SOP; same speed and voltage but 525-mil SOP package (larger than sTSOP) and higher ISB = 2 µA typical. | Better suited for through-hole prototyping or legacy SOP layouts, but less optimal for compact, high-density SMT designs. | Prefer for cost-sensitive industrial designs where board area is unconstrained and SOP reflow compatibility is prioritized over standby current. |
Compared with R1LV0108ESA-5SI#B1, the IS61LV10248AL-10TLI offers faster access but sacrifices voltage flexibility and package compactness, while the AS6C1008-55PCN matches speed and voltage but increases standby current and occupies 40% more PCB area - making R1LV0108ESA-5SI#B1 optimal for space- and battery-limited industrial edge devices.
Availability
R1LV0108ESA-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLCs, portable medical instrumentation, automotive infotainment systems, and POS terminals requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0108ESA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed as an advanced low-power SRAM family targeting battery-operated, space-constrained embedded systems requiring zero-refresh, wide-Vcc, and industrial-temperature operation - with emphasis on reliability and ease of parallel bus integration.
FAQ
What is the minimum supply voltage required for data retention in R1LV0108ESA-5SI#B1?
The R1LV0108ESA-5SI#B1 maintains stored data down to VCC = 2.0 V, as specified in the Low Vcc Data Retention Characteristics table. This applies under conditions where CS2 ≤ 0.2 V or CS1# ≥ Vcc − 0.2 V with CS2 ≥ Vcc − 0.2 V, enabling reliable operation during brown-out events without external backup capacitors. The R1LV0108ESA-5SI#B1 retains data at this voltage with ICCDR ≤ 10 µA at +85°C.
Does R1LV0108ESA-5SI#B1 require a clock signal or refresh circuitry?
No, the R1LV0108ESA-5SI#B1 is a fully static RAM and requires neither a clock signal nor periodic refresh cycles. Its architecture uses bistable latches for each memory cell, allowing indefinite data retention as long as power and valid control signals are maintained. This eliminates timing-critical refresh overhead in MCU firmware and simplifies system design compared to DRAM-based solutions.
What is the function of the NC pin on R1LV0108ESA-5SI#B1?
Pin 1 of the R1LV0108ESA-5SI#B1 in its 32-pin sTSOP package is designated NC (No Connect) and must remain electrically unconnected - neither tied to Vcc, Vss, nor any other signal. This pin has no internal bond wire or circuit connection; routing traces to it or applying voltage may cause unpredictable behavior or damage. Layout guidelines recommend leaving it floating or covering with solder mask.
Can R1LV0108ESA-5SI#B1 be used with 5 V logic systems?
The R1LV0108ESA-5SI#B1 inputs are TTL-compatible (VIH = 2.0 V min, VIL = 0.6 V max), allowing direct interface with 5 V logic outputs without level shifters - provided the 5 V signals do not exceed Vcc + 0.3 V (≤3.9 V). However, its Vcc must remain within 2.7–3.6 V; applying 5 V to Vcc will permanently damage the R1LV0108ESA-5SI#B1. Outputs swing between 0 V and Vcc, so 5 V receivers require translation.
How does the dual chip select (CS1# and CS2) simplify memory expansion with R1LV0108ESA-5SI#B1?
The R1LV0108ESA-5SI#B1 uses CS1# (active low) and CS2 (active high) to enable hierarchical decoding: one device activates when CS1# = L and CS2 = H, while another can use inverted CS2 or decoded upper address bits to assert CS2 = L for standby. This eliminates external AND gates in multi-SRAM systems and allows up to four devices to share A0–A16/DQ0–DQ7 with only two select lines - reducing glue logic and PCB routing complexity. The R1LV0108ESA-5SI#B1 datasheet confirms this in the Operation Table and Features section.
R1LV0108ESA-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESA-5SI#B1 FAQ
1.How can I place an order for R1LV0108ESA-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESA-5SI#B1 reliable?
The price and inventory of R1LV0108ESA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESA-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESA-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESA-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESA-5SI#B1?
R1LV0108ESA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESA-5SI#B1?
For technical support, including R1LV0108ESA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESA-5SI#B1 requirements.
6.How does Aetrix verify that R1LV0108ESA-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESA-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESA-5SI#B1?
All R1LV0108ESA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESA-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESA-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV0108ESA-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESA-5SI#B1 Tags
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