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Renesas R1LV0108ESA-5SI#BX
- Part No.:
- R1LV0108ESA-5SI#BX
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1LV0108ESA-5SI#BX.pdf
- Description:
- STANDARD SRAM, 128KX8, 55NS
- Quantity:
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Inventory:667
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Product details
Overview
R1LV0108ESA-5SI#BX from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM designed for battery-backed and low-voltage embedded memory applications. It operates from a single 2.7–3.6V supply, delivers 55 ns access time, supports industrial temperature range (−40°C to +85°C), and features ultra-low standby current of 0.6 µA at 3.0V - enabling long-term data retention in portable or energy-constrained systems.
For engineers reviewing the R1LV0108ESA-5SI#BX datasheet, R1LV0108ESA-5SI#BX pinout, R1LV0108ESA-5SI#BX application, or R1LV0108ESA-5SI#BX equivalent, this device serves as a drop-in replacement for legacy 32-pin sTSOP SRAMs requiring TTL-compatible I/O, no refresh, and dual chip select for memory expansion in industrial controllers, medical instrumentation, and real-time data loggers.
Technical Context
The R1LV0108ESA-5SI#BX implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, with integrated address decoding, sense/write amplifiers, and three-state output buffers. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables seamless bank selection and memory mapping without external logic.
All control signals - WE#, OE#, CS1#, and CS2 - are TTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.6 V, and the device requires no clocks or refresh cycles. Data retention is guaranteed down to 2.0 V with sub-µA current draw when placed in standby via CS2 = low or CS1# = high with CS2 ≥ Vcc − 0.2 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mb (131,072 × 8-bit); supports byte-wide data bus interfacing without multiplexing. |
| Access time | 55 ns max; ensures compatibility with 18 MHz bus timing in microcontroller-based systems. |
| Supply voltage | 2.7–3.6 V; eliminates need for level shifters when interfacing with 3.3 V logic families. |
| Standby current | 0.6 µA typical at 3.0 V / 25°C; extends battery life in always-on backup memory applications. |
| Operating temperature | −40°C to +85°C; qualified for industrial-grade reliability in harsh ambient environments. |
| I/O interface | TTL-compatible inputs/outputs; simplifies integration with legacy MCU and FPGA designs. |
| Data retention voltage | 2.0 V minimum; maintains stored data during brown-out or backup power transitions. |
Pinout & Package
Package: 8 mm × 13.4 mm, 32-pin plastic sTSOP (normal-bend type), JEDEC standard PTSA0032KB-A footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 128k-word addressing; no address multiplexing required. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state outputs; enables OR-tie capability for shared bus architectures. |
| CS1# | Chip select 1 | Active-low primary enable; must be low with CS2 high for read/write operations. |
| CS2 | Chip select 2 | Active-high secondary enable; controls buffer activation and data retention mode selection. |
| WE# | Write enable | Active-low write strobe; latches data on falling edge when CS1# and CS2 are asserted. |
| OE# | Output enable | Active-low read strobe; prevents bus contention by disabling outputs when deasserted. |
| Vcc | Power supply | Single 2.7–3.6 V supply; powers all internal logic and memory array. |
| Vss | Ground | Reference ground for all signals and internal circuitry. |
| NC | No connection | Pin 1 (top-left corner in sTSOP); must remain unconnected per design. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static operation eliminates DRAM-style refresh circuitry and timing overhead. |
| Dual chip select logic | CS1# (active-low) and CS2 (active-high) allow flexible memory banking and hierarchical decode. |
| Low-voltage data retention | Maintains valid data at Vcc ≥ 2.0 V with <10 µA current up to +85°C - critical for battery backup. |
| TTL-compatible I/O | Direct interface with 3.3 V microcontrollers and FPGAs without level translation components. |
| Three-state OR-tie capable outputs | Enables parallel connection of multiple SRAMs on shared data buses without external bus transceivers. |
Applications
| Industrial PLC Memory Buffer | Portable Medical Data Logger |
|---|---|
Use Scenario: Stores real-time sensor readings and configuration parameters in programmable logic controllers operating in factory-floor environments with wide temperature swings. IC Role / Device Role / Timing Role: Non-volatile backup memory holding firmware state and I/O mapping during power cycling or brown-out events. Use Value: 55 ns access time ensures deterministic response to scan-cycle interrupts; −40°C to +85°C rating guarantees uptime in unconditioned enclosures. |
Use Scenario: Captures ECG waveforms and patient vitals in handheld diagnostic devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Primary working memory with battery-backed retention during sleep mode and transport. Use Value: 0.6 µA standby current extends battery life beyond 12 months; 2.0 V data retention threshold aligns with Li-MnO₂ discharge curve. |
| Automotive Telematics Black Box | Smart Meter Firmware Cache |
Use Scenario: Logs vehicle CAN bus diagnostics and crash-event snapshots in telematics control units exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: High-reliability scratchpad memory retaining last-known operational state before power loss. Use Value: Industrial temperature grade and 3.6 V max supply tolerate automotive load-dump transients; sTSOP package resists mechanical vibration. |
Use Scenario: Caches firmware update payloads and tariff tables in utility smart meters deployed in outdoor meter boxes. IC Role / Device Role / Timing Role: Secure, low-power RAM for temporary storage during OTA updates and billing cycle calculations. Use Value: Dual CS architecture isolates memory during partial rewrites; 32-pin sTSOP footprint fits constrained PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns access time, 3.3 V only, 32-pin TSOP-II; higher speed but 5× higher standby current (3 µA). | Better suited for high-throughput buffering where latency dominates over power. | Select when system clock >25 MHz and battery life is secondary to throughput. |
| AS6C1008-55PCN | 55 ns access, 2.7–5.5 V supply, 32-pin SOP; wider voltage range but larger 525-mil SOP footprint. | Preferred for legacy board upgrades where sTSOP space is unavailable. | Choose for retrofit designs requiring pin-compatible replacement without layout change. |
Compared with R1LV0108ESA-5SI#BX, IS61LV10248AL-10TLI trades ultra-low power for speed, while AS6C1008-55PCN sacrifices compact sTSOP packaging for broader voltage tolerance and SOP compatibility - making R1LV0108ESA-5SI#BX optimal for new industrial designs prioritizing size, efficiency, and temperature resilience.
Availability
R1LV0108ESA-5SI#BX is available at Aetrix Electronics and suitable for industrial automation, portable medical instrumentation, and automotive black box recording requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0108ESA-5SI#BX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed to deliver high-density, low-power static RAM for battery-critical and thermally demanding embedded systems - emphasizing data retention integrity, TTL interoperability, and sTSOP space efficiency.
FAQ
What is the maximum operating frequency supported by R1LV0108ESA-5SI#BX?
R1LV0108ESA-5SI#BX does not use a clock signal and has no maximum operating frequency specification. Its performance is defined by access timing: 55 ns address-to-data delay (tAA) and 55 ns read cycle time (tRC). System bus speed is determined by these parameters - for example, it supports reliable operation with microcontrollers running at up to 18 MHz when interfaced directly without wait states.
Does R1LV0108ESA-5SI#BX require external refresh circuitry?
No, R1LV0108ESA-5SI#BX is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet setup/hold requirements - eliminating timing-critical refresh overhead present in DRAMs.
Can R1LV0108ESA-5SI#BX operate at 2.5 V?
No, R1LV0108ESA-5SI#BX is specified for 2.7–3.6 V operation only. At 2.5 V, DC characteristics such as VIH (minimum input high voltage) and output drive strength fall outside guaranteed limits, and data retention is not assured. Operation below 2.7 V risks functional failure or data corruption.
What is the function of the NC pin on R1LV0108ESA-5SI#BX?
The NC (No Connection) pin on R1LV0108ESA-5SI#BX is Pin 1 in the 32-pin sTSOP package. It is internally unconnected and must remain floating - no trace, pull-up, or pull-down should be attached. Connecting it may cause unpredictable behavior or damage due to internal floating node coupling.
How does R1LV0108ESA-5SI#BX enter data retention mode?
R1LV0108ESA-5SI#BX enters data retention mode when either (1) CS2 is driven low (≤ 0.2 V), or (2) CS1# is driven high (≥ Vcc − 0.2 V) while CS2 is held ≥ Vcc − 0.2 V or ≤ 0.2 V. In this state, the device draws ≤10 µA at +85°C and retains data down to Vcc = 2.0 V - ideal for battery-backed holdover.
R1LV0108ESA-5SI#BX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1LV0108ESA-5SI#BX FAQ
1.How can I place an order for R1LV0108ESA-5SI#BX through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESA-5SI#BX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESA-5SI#BX reliable?
The price and inventory of R1LV0108ESA-5SI#BX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESA-5SI#BX is usually 5 days.
3.What payment methods are accepted for R1LV0108ESA-5SI#BX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESA-5SI#BX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESA-5SI#BX?
R1LV0108ESA-5SI#BX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESA-5SI#BX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESA-5SI#BX?
For technical support, including R1LV0108ESA-5SI#BX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESA-5SI#BX requirements.
6.How does Aetrix verify that R1LV0108ESA-5SI#BX is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESA-5SI#BX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESA-5SI#BX meets industry standards.
7.What is the process for return or replacement of R1LV0108ESA-5SI#BX?
All R1LV0108ESA-5SI#BX units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESA-5SI#BX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESA-5SI#BX part is unused and in its original packaging.
Return procedure for R1LV0108ESA-5SI#BX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESA-5SI#BX Tags
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