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Renesas R1LV0108ESA-7SI#B0

Part No.:
R1LV0108ESA-7SI#B0
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.465", 11.80mm Width)
Datasheet:
AetrixR1LV0108ESA-7SI#B0.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,537

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Product details

Overview

R1LV0108ESA-7SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 70 ns access time, operating on a single 2.7–3.6 V supply and rated for –40°C to +85°C industrial temperature range. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for easy memory expansion in battery-backed embedded systems.

For engineers reviewing the R1LV0108ESA-7SI#B0 datasheet, R1LV0108ESA-7SI#B0 pinout, R1LV0108ESA-7SI#B0 application, or R1LV0108ESA-7SI#B0 equivalent, this device serves as a drop-in replacement for legacy 32-pin sTSOP SRAMs in portable instrumentation, industrial controllers, and real-time data loggers where low standby current (0.6 µA typical at 3.0 V) and data retention down to 2.0 V are critical.

Technical Context

The R1LV0108ESA-7SI#B0 implements a fully asynchronous, non-volatile-retentive SRAM architecture with separate address latching and three-state bidirectional DQ lines. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external decoding logic.

It uses Renesas's 0.15 µm CMOS process to achieve sub-1 µA standby current while maintaining full read/write functionality across its specified voltage and temperature range. Data retention mode is activated either by pulling CS2 ≤ 0.2 V or asserting CS1# ≥ Vcc−0.2 V with CS2 ≥ Vcc−0.2 V, enabling ultra-low-power hold states.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 Mb (131,072 words × 8 bits) - supports byte-wide data buses without external multiplexing
Access Time70 ns - ensures compatibility with 14 MHz bus timing in microcontroller-based systems
Supply Voltage2.7–3.6 V - matches Li-ion battery discharge profile and eliminates need for LDO regulation
Standby Current0.6 µA typical at 3.0 V, 25°C - enables multi-year battery life in always-on monitoring nodes
Operating Temperature–40°C to +85°C - qualified for industrial control cabinets and outdoor telemetry enclosures
Data Retention Voltage2.0 V minimum - preserves contents during brown-out or backup battery sag
Package32-pin sTSOP (8 mm × 13.4 mm, normal-bend) - surface-mount compatible with high-density PCB layouts

Pinout & Package

Package: 32-pin plastic sTSOP (PTSA0032KB-A), 8 mm × 13.4 mm footprint, normal-bend lead configuration, tray packaging (234 pcs/tray).

Pin/Terminal Circuit Role Design Meaning
A0–A16Address Input17-bit address bus supporting full 131,072-word addressing; no internal multiplexing required
DQ0–DQ7Bi-directional Data I/OCommon data bus with three-state output drivers; OR-tie capable for bus sharing
CS1#Chip Select 1 (active-low)Primary enable; when high, forces high-impedance output regardless of other controls
CS2Chip Select 2 (active-high)Secondary enable; used with CS1# for hierarchical decoding or data retention mode entry
WE#Write Enable (active-low)Controls write cycle initiation; low during valid address/data setup per AC timing table
OE#Output Enable (active-low)Gates output drivers; prevents bus contention when multiple devices share DQ lines
VccPower SupplySingle 2.7–3.6 V supply; decoupling capacitor required per Renesas layout guidelines
VssGroundReference return path for all signals; must be low-inductance connection to minimize noise
NCNo ConnectPin 1 (top-left corner) is unconnected; must remain floating - no tie to Vcc/Vss

Key Features

Feature Design Value
No refresh requiredEliminates system-level refresh overhead and timing-critical controller firmware routines
TTL-compatible I/ODirect interface with legacy 5 V microcontrollers via level-shifting resistors or native 3.3 V logic
Dual chip select architectureEnables seamless expansion beyond 1 Mb using CS2 as bank selector without additional logic gates
Three-state outputs with OR-tie capabilityAllows multiple R1LV0108ESA-7SI#B0 devices to share a common data bus without external bus transceivers
Low-voltage data retentionMaintains stored data down to 2.0 V supply, supporting graceful shutdown during power failure

Applications

Portable Medical Monitor Industrial PLC I/O Module

Use Scenario: Battery-powered ECG recorder capturing waveform data during patient transport.

IC Role / Device Role / Timing Role: Primary data buffer storing raw analog-to-digital samples prior to wireless transmission.

Use Value: 0.6 µA standby current extends single-cell Li-ion operation to >3 years in sleep mode; 70 ns access supports real-time sampling at 14 kHz.

Use Scenario: Modular programmable logic controller handling sensor inputs and actuator outputs in factory automation.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration registers and last-known state during power cycling.

Use Value: –40°C to +85°C rating ensures reliability inside unconditioned control panels; dual CS pins simplify multi-module address decoding.

Smart Energy Meter Avionics Data Logger

Use Scenario: ANSI C12.22-compliant electricity meter logging consumption every 15 minutes with tamper detection.

IC Role / Device Role / Timing Role: Secure scratchpad memory for cryptographic keys and rolling authentication counters.

Use Value: Data retention down to 2.0 V guarantees key integrity during grid brownouts; sTSOP package fits constrained meter PCB space.

Use Scenario: DO-160G-certified flight data recorder capturing ARINC 429 bus traffic during maintenance cycles.

IC Role / Device Role / Timing Role: High-reliability buffer staging timestamped sensor packets before EEPROM archiving.

Use Value: No-refresh operation avoids timing jitter in deterministic recording windows; industrial temp grade meets avionics bay thermal profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV102416AL-7TI16-bit bus width (128k × 16), 70 ns access, 3.3 V only, 44-pin TSOPRequires PCB redesign for wider data bus and larger footprint; higher density but incompatible pinoutSelect only if system requires 16-bit parallel interface and board layout allows 44-pin TSOP placement.
AS6C1008-70SCNSame 128k × 8 organization and 70 ns speed, but 32-pin SOP package and 2.7–5.5 V rangeSOP package increases board area vs. sTSOP; wider voltage range adds flexibility but no benefit in 3.3 V systemsPrefer for through-hole prototyping or where sTSOP reflow capability is unavailable; identical functional behavior.

Compared with R1LV0108ESA-7SI#B0, IS61LV102416AL-7TI offers double data width at the cost of pinout and voltage compatibility, while AS6C1008-70SCN matches functionality but trades sTSOP miniaturization for SOP manufacturability - both require layout review before substitution.

Availability

R1LV0108ESA-7SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for R1LV0108ESA-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0108E Series was designed specifically for low-power, battery-operated memory applications demanding zero-refresh operation, wide temperature tolerance, and compact packaging - targeting portable instrumentation and industrial edge nodes.

FAQ

What is the maximum operating frequency supported by R1LV0108ESA-7SI#B0?

R1LV0108ESA-7SI#B0 does not operate on a clock signal - it is an asynchronous static RAM. Its 70 ns access time corresponds to a maximum effective bus rate of approximately 14 MHz when used with standard microcontroller interfaces. Timing compliance depends on meeting tRC (70 ns read cycle time), tWC (70 ns write cycle time), and associated setup/hold parameters defined in the AC characteristics table.

Does R1LV0108ESA-7SI#B0 require external refresh circuitry?

No, R1LV0108ESA-7SI#B0 is a true static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and valid control signals are maintained. This eliminates timing-critical refresh interrupts and simplifies firmware design compared to DRAM or pseudo-SRAM solutions.

Can R1LV0108ESA-7SI#B0 retain data during power loss?

Yes, R1LV0108ESA-7SI#B0 supports low-voltage data retention down to 2.0 V. When placed in retention mode via CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V (with CS2 ≥ Vcc−0.2 V), it draws only 0.6 µA typical at 25°C, preserving stored data during brown-out or backup battery discharge - critical for fail-safe logging applications.

What is the meaning of "SI" in the part number R1LV0108ESA-7SI#B0?

The "SI" suffix in R1LV0108ESA-7SI#B0 denotes the industrial temperature grade (–40°C to +85°C), distinguishing it from the commercial-grade "SR" variant (0°C to +70°C). This grading reflects full characterization and screening across the extended thermal range, ensuring reliable operation in harsh environments like factory floors or outdoor enclosures.

Is R1LV0108ESA-7SI#B0 RoHS compliant and lead-free?

Yes, R1LV0108ESA-7SI#B0 is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and EU Directive 2011/65/EU. The sTSOP package uses matte tin lead finish, and the device meets JEDEC J-STD-609 Category 1 marking requirements. Full compliance documentation is available via Renesas' official product page and material declarations.

R1LV0108ESA-7SI#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.465", 11.80mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LV0108ESA-7SI#B0 FAQ

1.How can I place an order for R1LV0108ESA-7SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0108ESA-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0108ESA-7SI#B0 reliable?

The price and inventory of R1LV0108ESA-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESA-7SI#B0 is usually 5 days.

3.What payment methods are accepted for R1LV0108ESA-7SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESA-7SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0108ESA-7SI#B0?

R1LV0108ESA-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0108ESA-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0108ESA-7SI#B0?

For technical support, including R1LV0108ESA-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESA-7SI#B0 requirements.

6.How does Aetrix verify that R1LV0108ESA-7SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV0108ESA-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESA-7SI#B0 meets industry standards.

7.What is the process for return or replacement of R1LV0108ESA-7SI#B0?

All R1LV0108ESA-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESA-7SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0108ESA-7SI#B0 part is unused and in its original packaging.

Return procedure for R1LV0108ESA-7SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0108ESA-7SI#B0 Tags

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