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Renesas R1LV0108ESA-7SI#BA
- Part No.:
- R1LV0108ESA-7SI#BA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1LV0108ESA-7SI#BA.pdf
- Description:
- STANDARD SRAM, 128KX8, 70NS
- Quantity:
- Payment:
- Shipping:
Inventory:15,219
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Product details
Overview
R1LV0108ESA-7SI#BA from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM designed for battery-backed and low-voltage embedded memory applications. It operates from a single 2.7–3.6V supply, delivers 70ns access time, supports industrial temperature range (–40°C to +85°C), and features TTL-compatible I/O with no refresh or clock required - ideal for portable instrumentation and real-time data logging systems.
For engineers reviewing the R1LV0108ESA-7SI#BA datasheet, R1LV0108ESA-7SI#BA pinout, R1LV0108ESA-7SI#BA application, or R1LV0108ESA-7SI#BA equivalent, key selection criteria include standby current (0.6µA typical at 3.0V), sTSOP-32 package compatibility, dual chip select architecture (CS1#, CS2), and guaranteed data retention down to 2.0V Vcc.
Technical Context
This device implements a fully static CMOS memory array with 128k-word × 8-bit organization, fabricated on Renesas's 0.15µm process. Its address decoding uses separate row/column decoders, and data I/O employs three-state bidirectional buffers controlled by OE# and WE#.
The R1LV0108ESA-7SI#BA supports two independent chip select inputs (CS1#, CS2) enabling seamless memory expansion without external logic. Data retention mode is activated either by pulling CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V while CS2 ≥ Vcc−0.2V, allowing ultra-low-current hold operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mb (131,072 × 8-bit) - provides byte-wide storage for microcontroller-based systems requiring non-refreshed volatile memory. |
| Access Time | 70 ns - ensures compatibility with 14 MHz bus timing in legacy industrial controllers and metering platforms. |
| Supply Voltage | 2.7–3.6 V - enables direct interface with 3.3V logic families and battery-powered designs using Li-ion or coin-cell sources. |
| Standby Current | 0.6 µA typical at 3.0V/25°C - extends battery life in always-on backup memory applications beyond 10 years. |
| Data Retention Vcc | 2.0 V minimum - guarantees SRAM contents survive brown-out events and deep sleep states in safety-critical edge nodes. |
| Operating Temperature | –40°C to +85°C - qualified for deployment in automotive body control modules and outdoor industrial PLCs. |
| I/O Compatibility | TTL-level - eliminates level-shifting requirements when interfacing with legacy 8-bit MCUs like Intel 8051 or Zilog Z8. |
Pinout & Package
Package: 8mm × 13.4mm 32-pin plastic sTSOP (normal-bend type), JEDEC standard PTSA0032KB-A footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Input | 17-bit address bus supporting full 131,072-word addressing; A16 is MSB for 1Mb density. |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with three-state output drivers; OR-tie capable for bus sharing. |
| CS1#, CS2 | Chip Select | Dual active-low selects enable hierarchical memory mapping - CS1# primary, CS2 secondary for bank expansion. |
| WE# | Write Enable | Active-low write strobe; latches data on falling edge when CS1# = L and CS2 = H. |
| OE# | Output Enable | Active-low control for output buffer; prevents bus contention during read cycles or multi-device sharing. |
| Vcc | Power Supply | Single 2.7–3.6V supply input; decoupling capacitor placement critical near Pin 17 per layout guidelines. |
| Vss | Ground | Signal ground reference; Pin 16 must be connected directly to PCB ground plane for noise immunity. |
| NC | No Connect | Pin 1 (NC) is internally unconnected - must remain floating or tied to ground per design rules; not usable as strap. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh or clock required | Eliminates system-level timing overhead and simplifies firmware for battery-operated devices. |
| 0.6 µA standby current (typ.) | Reduces average power draw to sub-microwatt levels during sleep - critical for energy-harvesting sensor nodes. |
| Dual chip select (CS1#, CS2) | Enables 2× memory expansion without glue logic; supports interleaved or contiguous address mapping. |
| Common data I/O with three-state outputs | Permits direct connection to shared microcontroller data buses; OE# prevents signal conflicts during multi-peripheral access. |
| Data retention down to 2.0V Vcc | Preserves RAM contents during brown-out conditions common in automotive and utility metering applications. |
Applications
| Portable Medical Monitors | Industrial Programmable Logic Controllers |
|---|---|
Use Scenario: Continuous ECG waveform buffering in handheld patient monitors powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: Volatile data buffer holding real-time analog samples prior to wireless transmission or flash storage. Use Value: 0.6µA standby current extends operational runtime between charges; 70ns access meets sampling rate deadlines up to 14 MSPS. |
Use Scenario: Storing ladder logic state variables and I/O image tables in DIN-rail mounted PLCs operating in factory environments. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for deterministic scan-cycle execution in real-time control loops. Use Value: –40°C to +85°C rating ensures reliability across seasonal thermal swings; TTL compatibility avoids level-shifters on legacy 5V backplanes. |
| Smart Utility Meters | Automotive Body Control Modules |
Use Scenario: Metering data caching during power outages in AMI-enabled electricity/water meters with supercapacitor backup. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving billing registers and tamper logs when main supply fails. Use Value: 2.0V data retention threshold aligns with supercap discharge curves; sTSOP package fits constrained meter PCB footprints. |
Use Scenario: Storing door lock status, window position, and lighting configuration in vehicle body domain controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding user preferences and fault history across ignition cycles. Use Value: Dual CS pins simplify integration into multi-chip memory subsystems; industrial temp grade satisfies OEM AEC-Q100 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-70ZSXIT | 70ns access, 2.2–3.6V supply, 32-pin TSOP-II; higher standby current (1µA typ.) and no data retention below 2.2V. | Targeted at commercial-grade telecom infrastructure; lacks extended data retention spec for battery backup use cases. | Select only if wider voltage tolerance (2.2V min) is prioritized over ultra-low standby or deep-retention capability. |
| IS61LV25616AL-10TLI | 10ns access, 3.3V-only supply, 44-pin TSOP; 256K × 16 organization requires bus-width adaptation and consumes ~5mA active current. | Optimized for high-speed networking processors; incompatible pinout and larger footprint preclude drop-in replacement. | Choose when bandwidth >100MB/s is mandatory and board redesign is acceptable for performance upgrade. |
Compared with CY62128EV30LL-70ZSXIT and IS61LV25616AL-10TLI, the R1LV0108ESA-7SI#BA uniquely balances industrial temperature support, sub-microwatt standby, and 2.0V data retention - making it the only viable choice for long-duration battery-backed memory where power budget and brown-out resilience are non-negotiable.
Availability
R1LV0108ESA-7SI#BA is available at Aetrix Electronics and suitable for portable medical monitors, industrial programmable logic controllers, and smart utility meters requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESA-7SI#BA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed specifically for low-voltage, low-power embedded memory applications where battery operation, data retention, and simple parallel interface are essential - targeting instrumentation, metering, and control systems.
FAQ
What is the maximum operating frequency supported by R1LV0108ESA-7SI#BA?
The R1LV0108ESA-7SI#BA does not operate on a clock signal - it is a static RAM with asynchronous timing. Its 70ns access time corresponds to a maximum effective bus cycle rate of approximately 14.3 MHz when used with compatible address/data setup/hold margins. System timing must comply with tRC (70ns), tAA (70ns), and tOE (35ns) parameters per the datasheet.
Does R1LV0108ESA-7SI#BA require external refresh circuitry?
No, the R1LV0108ESA-7SI#BA is a true static RAM and requires no refresh cycles or external refresh controller. Its CMOS latch-based memory cells retain data indefinitely as long as Vcc remains within specification and appropriate chip select conditions are met - eliminating firmware overhead and timing constraints associated with DRAM.
Can R1LV0108ESA-7SI#BA be used in battery backup mode with Vcc reduced to 2.2V?
Yes, the R1LV0108ESA-7SI#BA guarantees data retention down to 2.0V Vcc under specified conditions (CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V). At 2.2V, retention current remains ≤3µA at +40°C, enabling multi-year backup operation with small coin cells or supercapacitors in metering and security applications.
What is the function of the NC pin on R1LV0108ESA-7SI#BA?
Pin 1 of the R1LV0108ESA-7SI#BA is marked NC (No Connect) and is internally unconnected. It must not be used as a signal or power path. Per Renesas layout guidance, this pin may be left floating or tied to ground for mechanical stability - but never driven or loaded, as it has no electrical function in the device.
How does the dual chip select (CS1# and CS2) architecture benefit system design with R1LV0108ESA-7SI#BA?
The dual chip select architecture of the R1LV0108ESA-7SI#BA allows flexible memory expansion: CS1# serves as primary enable, while CS2 acts as secondary qualifier. This enables hierarchical decoding - for example, using CS2 to select a memory bank and CS1# to enable individual devices - reducing or eliminating external address decoder logic in multi-SRAM systems.
R1LV0108ESA-7SI#BA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1LV0108ESA-7SI#BA FAQ
1.How can I place an order for R1LV0108ESA-7SI#BA through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESA-7SI#BA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESA-7SI#BA reliable?
The price and inventory of R1LV0108ESA-7SI#BA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESA-7SI#BA is usually 5 days.
3.What payment methods are accepted for R1LV0108ESA-7SI#BA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESA-7SI#BA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESA-7SI#BA?
R1LV0108ESA-7SI#BA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESA-7SI#BA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESA-7SI#BA?
For technical support, including R1LV0108ESA-7SI#BA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESA-7SI#BA requirements.
6.How does Aetrix verify that R1LV0108ESA-7SI#BA is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESA-7SI#BA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESA-7SI#BA meets industry standards.
7.What is the process for return or replacement of R1LV0108ESA-7SI#BA?
All R1LV0108ESA-7SI#BA units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESA-7SI#BA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESA-7SI#BA part is unused and in its original packaging.
Return procedure for R1LV0108ESA-7SI#BA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESA-7SI#BA Tags
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