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Renesas R1LV0108ESF-5SI#B0
- Part No.:
- R1LV0108ESF-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV0108ESF-5SI#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,112
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Product details
Overview
R1LV0108ESF-5SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, operating on a single 2.7–3.6 V supply and featuring 0.6 µA typical standby current at 3.0 V. It uses TTL-compatible I/O, supports easy memory expansion via dual chip select inputs (CS1# and CS2), and is designed for battery-backed or low-voltage embedded systems requiring non-refreshed, reliable data retention.
For engineers reviewing the R1LV0108ESF-5SI#B0 datasheet, R1LV0108ESF-5SI#B0 pinout, R1LV0108ESF-5SI#B0 application, or R1LV0108ESF-5SI#B0 equivalent, key selection criteria include industrial temperature range (–40°C to +85°C), TSOP-II package compatibility, stand-by current performance under bias, and dual-chip-select memory mapping for multi-bank architectures.
Technical Context
The R1LV0108ESF-5SI#B0 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, with no internal clocks or refresh circuitry required. Its address decoding includes dedicated A0–A16 inputs and supports both CS1#- and CS2-controlled data retention modes.
It features three-state bidirectional DQ0–DQ7 I/Os with OR-tie capability, TTL-compatible voltage thresholds (VIH = 2.0 V min, VIL = 0.6 V max), and dual chip select logic enabling seamless memory expansion without external glue logic. Standby current drops to 0.6 µA at 25°C when CS2 is low or CS1# is high with CS2 high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mb (131,072 words × 8 bits): supports byte-wide data bus interfacing in compact microcontroller or FPGA-based systems. |
| Access time | 55 ns (max): enables direct connection to legacy 16–20 MHz bus interfaces without wait states. |
| Supply voltage | 2.7–3.6 V: compatible with 3.3 V logic domains and battery-powered operation down to 2.7 V. |
| Standby current | 0.6 µA typical at 3.0 V / 25°C: extends battery life in always-on backup memory applications. |
| Operating temperature | –40°C to +85°C: qualified for industrial-grade embedded control, instrumentation, and automotive body electronics. |
| I/O interface | TTL-compatible inputs/outputs: eliminates level-shifting requirements when interfacing with legacy MCU families. |
| Data retention voltage | 2.0–3.6 V: maintains stored data during brown-out or sleep mode with minimal Vcc headroom. |
Pinout & Package
Package: 32-pin plastic TSOP (normal-bend type), 8 mm × 20 mm footprint (PTSA0032KA-A), RoHS-compliant, surface-mountable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131,072-word addressing; no multiplexing required. |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state output control; supports OR-tie for shared-bus configurations. |
| CS1#, CS2 | Chip select inputs | Independent enable controls: CS1# active-low, CS2 active-high - enables flexible bank selection and power-gating. |
| WE# | Write enable | Active-low write strobe; latches data on falling edge with tWP ≥ 45 ns minimum pulse width. |
| OE# | Output enable | Active-low control for output buffer; prevents bus contention during read cycles or multi-device sharing. |
| Vcc, Vss | Power supply | Single 2.7–3.6 V supply; no separate Vcc/Vdd or ground isolation needed. |
| NC | No connect | Pin 1 (NC) is unconnected - must remain floating or tied to ground per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead - simplifies firmware and reduces system power. |
| Dual chip select architecture | CS1# and CS2 allow independent bank enable/disable, enabling seamless memory expansion up to 2+ banks without address decoder logic. |
| Low-voltage data retention | Maintains valid data at Vcc as low as 2.0 V - critical for battery-backed SRAM in power-fail scenarios. |
| TTL-compatible I/O | Direct interface with legacy 5 V-tolerant or 3.3 V microcontrollers without level translators or pull-up resistors. |
| OR-tie capable outputs | Enables wired-OR bus structures (e.g., interrupt aggregation or status polling) without external diodes or logic gates. |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and runtime configuration in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile parameter cache holding firmware-modifiable settings between power cycles; accessed asynchronously by ARM Cortex-M4 core. Use Value: Enables deterministic 55 ns read access without refresh overhead, while 0.6 µA standby current preserves supercapacitor hold-up time beyond 72 hours. | Use Scenario: Retaining patient-specific therapy parameters and device self-test logs in portable infusion pumps operating on primary lithium batteries. IC Role / Device Role / Timing Role: Battery-backed SRAM serving as secure, fast-access configuration store - powered from backup rail during main supply interruption. Use Value: Guaranteed data retention at 2.0 V allows continued operation during brown-out events; –40°C to +85°C rating ensures reliability across clinical and transport conditions. |
| Automotive Body Control Module | Test Equipment Calibration Memory |
Use Scenario: Holding door lock actuation history, mirror position presets, and lighting profiles in vehicle body control units (BCUs). IC Role / Device Role / Timing Role: Low-power SRAM mapped into CAN-connected microcontroller's external memory space for persistent user preference storage. Use Value: Dual CS inputs simplify integration into multi-peripheral BCU designs; industrial temp grade meets AEC-Q100 Class 2 requirements for under-hood proximity. | Use Scenario: Storing instrument-specific calibration coefficients and measurement offset corrections in handheld multimeters and oscilloscope probes. IC Role / Device Role / Timing Role: Static memory used during factory calibration to record trim values; accessed only at boot or service mode. Use Value: 55 ns access time supports fast initialization sequences; 8-bit parallel interface matches low-pin-count MCU peripherals without bus multiplexing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416L-10TLI | 2 Mb (128k × 16), 10 ns access, 3.3 V only, 44-pin TSOP | Wider data bus, faster timing, higher density - requires PCB redesign and bus-width adaptation. | Select when 16-bit interface and sub-10 ns latency are mandatory; not drop-in compatible. |
| AS6C4008-55ZIN | 4 Mb (512k × 8), 55 ns access, 2.7–3.6 V, 32-pin SOP | Same speed and voltage, but larger capacity and SOP package - different footprint and thermal profile. | Choose for higher density where board space permits SOP; verify thermal derating in enclosed enclosures. |
Compared with IS61LV102416L-10TLI and AS6C4008-55ZIN, the R1LV0108ESF-5SI#B0 offers optimal balance of industrial temperature support, ultra-low standby current, and pin-compatible TSOP-II footprint - making it preferred for space-constrained, battery-sensitive designs where 1 Mb capacity suffices.
Availability
R1LV0108ESF-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive body control modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0108ESF-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed as a low-voltage, low-power parallel SRAM family targeting battery-operated and energy-conscious embedded systems needing simple, reliable, non-refreshed memory with industrial temperature resilience.
FAQ
What is the maximum operating frequency supported by the R1LV0108ESF-5SI#B0?
The R1LV0108ESF-5SI#B0 does not operate on a clock signal - it is an asynchronous static RAM. Its timing is governed by access time (tAA ≤ 55 ns) and cycle time (tRC ≤ 55 ns), enabling reliable operation with bus frequencies up to ~18 MHz in systems with zero wait-state controllers. The R1LV0108ESF-5SI#B0 requires no clock input or synchronization logic.
Does the R1LV0108ESF-5SI#B0 support data retention during power loss?
Yes, the R1LV0108ESF-5SI#B0 supports data retention at Vcc as low as 2.0 V when placed in standby via CS2 low or CS1# high with CS2 high. In this mode, typical retention current is 0.6 µA at 25°C, allowing extended hold-up time using small backup capacitors or batteries. The R1LV0108ESF-5SI#B0 retains data without refresh during brown-out conditions.
Can the R1LV0108ESF-5SI#B0 be used with a 5 V microcontroller?
No - the R1LV0108ESF-5SI#B0 is strictly a 2.7–3.6 V device with TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.6 V). Direct connection to 5 V logic violates absolute maximum ratings and risks damage. Interface requires level translation or use with 3.3 V–tolerant MCUs. The R1LV0108ESF-5SI#B0 is not 5 V tolerant.
What is the meaning of "-5SI" in R1LV0108ESF-5SI#B0?
In R1LV0108ESF-5SI#B0, "-5" denotes 55 ns access time, "S" indicates TSOP package, "F" specifies the normal-bend TSOP variant (8 mm × 20 mm), and "I" signifies industrial temperature range (–40°C to +85°C). The "#B0" suffix reflects tape-and-reel packaging per Renesas's ordering convention. The R1LV0108ESF-5SI#B0 is not a sample or engineering unit - it is a fully qualified production part.
How does the dual chip select (CS1# and CS2) function in the R1LV0108ESF-5SI#B0?
The R1LV0108ESF-5SI#B0 uses CS1# (active-low) and CS2 (active-high) to enable hierarchical memory selection: the device activates only when CS1# = L and CS2 = H. This allows cascading multiple R1LV0108ESF-5SI#B0 devices using shared address/data buses - e.g., one device enabled by CS2 = H and CS1# = L, another by CS2 = L (standby) and alternate CS1#. The R1LV0108ESF-5SI#B0 supports both CS1#- and CS2-controlled data retention modes.
R1LV0108ESF-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESF-5SI#B0 FAQ
1.How can I place an order for R1LV0108ESF-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESF-5SI#B0 reliable?
The price and inventory of R1LV0108ESF-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESF-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESF-5SI#B0?
R1LV0108ESF-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESF-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESF-5SI#B0?
For technical support, including R1LV0108ESF-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0108ESF-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESF-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESF-5SI#B0?
All R1LV0108ESF-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESF-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESF-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESF-5SI#B0 Tags
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