My Inquiry
My Account
Renesas R1LV0108ESF-5SI#B1
- Part No.:
- R1LV0108ESF-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV0108ESF-5SI#B1.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:468
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0108ESF-5SI#B1 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM designed for battery-backed and low-voltage embedded memory applications. It operates from a single 2.7–3.6V supply, delivers 55 ns access time, supports industrial temperature range (−40°C to +85°C), and features TTL-compatible I/O with no refresh or clock required.
For engineers reviewing the R1LV0108ESF-5SI#B1 datasheet, R1LV0108ESF-5SI#B1 pinout, R1LV0108ESF-5SI#B1 application, or R1LV0108ESF-5SI#B1 equivalent, key selection criteria include standby current (0.6 µA typical at 3.0V), TSOP-I package compatibility, dual chip select architecture (CS1#, CS2), and data retention down to 2.0V.
Technical Context
The R1LV0108ESF-5SI#B1 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, with integrated address decoding, sense/write amplifiers, and three-state output buffers. Its dual chip select (CS1#, CS2) enables seamless memory expansion without external logic.
It supports true static operation-no clocks, no refresh cycles-and uses active-low control signals (WE#, OE#, CS1#) with CS2 as an enable/disable gate for address and I/O buffers. Data retention mode is activated either by pulling CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V while CS2 ≥ Vcc−0.2V, enabling ultra-low-current hold at 0.6 µA (25°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mb (131,072 × 8-bit); provides compact byte-wide storage for microcontroller peripherals and firmware buffers. |
| Access Time | 55 ns max; ensures compatibility with 18 MHz bus timing in legacy 8/16-bit embedded systems. |
| Supply Voltage | 2.7–3.6 V; supports direct connection to 3.3V rails and brown-out tolerant operation down to 2.0V for data retention. |
| Standby Current | 0.6 µA typical at 3.0V/25°C; enables multi-year battery backup in RTC and configuration memory applications. |
| Operating Temperature | −40°C to +85°C; qualified for industrial-grade deployment in automotive body control, industrial HMIs, and network edge devices. |
| I/O Interface | TTL-compatible inputs/outputs; eliminates level-shifting requirements when interfacing with legacy MCU families (e.g., 8051, Z80, older ARM7). |
| Package | 32-pin TSOP (8 mm × 20 mm, normal-bend); surface-mount compatible with standard reflow profiles and high-density PCB layouts. |
Pinout & Package
Package: 32-pin plastic TSOP (normal-bend type), 8 mm × 20 mm footprint, JEDEC MO-141 compliant, lead-free (Pb-free) per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128k-word addressing; A16 is used (not NC) - critical for correct memory mapping. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state outputs; supports OR-tie for shared bus architectures. |
| CS1#, CS2 | Chip Selects | CS1# active-low primary select; CS2 active-high secondary select - together enable bank decoding and memory expansion. |
| WE# | Write Enable | Active-low write strobe; latches data on falling edge; must be coordinated with CS1#/CS2 for valid write cycle. |
| OE# | Output Enable | Active-low read strobe; controls output buffer state independently of CS - prevents bus contention during partial decode. |
| Vcc, Vss | Power/Ground | Single 2.7–3.6V supply; decoupling required within 10 mm of Vcc pin to maintain 55 ns timing integrity. |
| NC | No Connect | Pin 1 (NC) is unconnected - must remain floating; not usable as strap or test point. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh / no clock required | Eliminates system-level timing overhead and simplifies power management in battery-operated devices. |
| 0.6 µA standby current (typ.) | Enables >10-year data retention on coin-cell batteries (e.g., CR2032) in always-on backup memory applications. |
| Dual chip select (CS1#, CS2) | Supports up to four R1LV0108ESF-5SI#B1 devices on one bus without external address decoding logic. |
| TTL-compatible I/O | Direct interface with legacy microcontrollers and FPGAs without level translators - reduces BOM count and layout complexity. |
| Data retention at 2.0V | Maintains stored contents during brown-out events or deep sleep modes where Vcc drops below operational minimum. |
Applications
| Industrial PLC Data Buffer | Automotive Body Control Module |
|---|---|
Use Scenario: Storing runtime configuration, sensor calibration tables, and fault logs in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical state data during power cycling; accessed via parallel bus at ≤18 MHz. Use Value: 55 ns access time and −40°C to +85°C rating ensure deterministic response under thermal stress; 0.6 µA standby extends backup battery life beyond 5 years. |
Use Scenario: Retaining door lock status, window position, and seat memory settings in automotive body control units (BCUs) with battery backup. IC Role / Device Role / Timing Role: Battery-backed SRAM providing instant-read configuration storage independent of main ECU power rail. Use Value: Data retention down to 2.0V allows reliable hold during cold-crank voltage sag; TSOP package fits constrained space behind dashboard assemblies. |
| Medical Infusion Pump Memory | POS Terminal Firmware Cache |
Use Scenario: Storing dose history, alarm thresholds, and user preferences in Class II medical infusion pumps requiring traceable, tamper-resistant memory. IC Role / Device Role / Timing Role: Safety-critical volatile memory with guaranteed data integrity during mains failure; accessed via isolated SPI-to-parallel bridge. Use Value: Industrial temp grade and RoHS compliance meet IEC 60601-1 requirements; no refresh eliminates timing-related failure modes in safety firmware. |
Use Scenario: Caching transaction logs and tax tables in retail point-of-sale terminals deployed in uncontrolled ambient conditions. IC Role / Device Role / Timing Role: High-reliability parallel SRAM serving as fast-access scratchpad between ARM9 host and flash storage. Use Value: 32-pin TSOP footprint enables dense, cost-effective PCB layout; TTL compatibility avoids signal integrity issues on long traces in metal enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128ELL-55ZSXI (Infineon) | Same density (128k×8), 55 ns access, but 3.3V-only supply (3.0–3.6V); higher ISB (1 µA typ.) | Lacks 2.7V operation and sub-2.0V data retention - unsuitable for wide-input-voltage battery systems. | Prefer R1LV0108ESF-5SI#B1 when Vcc may dip below 3.0V or extended battery life is mandatory. |
| AS6C1008-55ZIN (Alliance Memory) | Pin-compatible 32-pin TSOP, same 55 ns speed, but rated only for 0°C to +70°C; ISB = 1.5 µA typ. | Not qualified for industrial temperature range - excludes use in automotive or outdoor industrial deployments. | Select R1LV0108ESF-5SI#B1 for designs requiring −40°C startup or sustained operation above 70°C. |
Compared with CY62128ELL-55ZSXI and AS6C1008-55ZIN, the R1LV0108ESF-5SI#B1 uniquely combines industrial temperature support, 2.7V minimum operation, and 0.6 µA standby - making it the only choice for battery-backed SRAM in thermally demanding, wide-input-voltage embedded systems.
Availability
R1LV0108ESF-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, and medical infusion pump memory requiring stable component supply across extended lifecycle programs.
Supply support for R1LV0108ESF-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed to deliver ultra-low-power, high-reliability parallel SRAM for battery-backed and low-voltage embedded systems where refresh-free operation and long-term data retention are essential.
FAQ
What is the minimum supply voltage required for data retention in the R1LV0108ESF-5SI#B1?
The R1LV0108ESF-5SI#B1 maintains data integrity down to 2.0V when placed in retention mode via CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V. This capability is explicitly specified in the Low Vcc Data Retention Characteristics table (Page 12) and enables reliable operation during brown-out events without external supervision circuitry.
Does the R1LV0108ESF-5SI#B1 require an external clock or refresh controller?
No, the R1LV0108ESF-5SI#B1 is a fully static RAM with no internal clock and zero refresh requirement. Its operation relies solely on address, data, and control signals (CS1#, CS2, WE#, OE#); this eliminates timing-critical refresh cycles and simplifies integration into resource-constrained microcontroller systems.
What is the function of the NC pin on the R1LV0108ESF-5SI#B1 TSOP package?
Pin 1 of the R1LV0108ESF-5SI#B1 is designated NC (No Connect) and must remain unconnected - it is not bonded internally and serves no electrical function. The datasheet explicitly identifies it as non-functional in the Pin Description table (Page 4) and warns against using it as a test point or strap.
Can the R1LV0108ESF-5SI#B1 be used in place of the R1LV0108ESN-5SI#B1?
No - the R1LV0108ESF-5SI#B1 uses a 32-pin TSOP package (PTSA0032KA-A), while the R1LV0108ESN-5SI#B1 uses a 32-pin SOP (PRSP0032DF-A). Though pinout and logic are identical, their footprints, thermal profiles, and reflow characteristics differ; PCB layout and assembly processes are not interchangeable.
What is the maximum capacitive load the R1LV0108ESF-5SI#B1 outputs can drive reliably?
The R1LV0108ESF-5SI#B1 specifies output timing under CL = 30 pF (Page 7), and its I/O capacitance is rated at ≤10 pF (Page 6). To maintain 55 ns access time and signal integrity, total trace + load capacitance should not exceed 30 pF - requiring careful routing and limiting fanout to ≤2 standard TTL loads or one FPGA input with <10 pF input capacitance.
R1LV0108ESF-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESF-5SI#B1 FAQ
1.How can I place an order for R1LV0108ESF-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESF-5SI#B1 reliable?
The price and inventory of R1LV0108ESF-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESF-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESF-5SI#B1?
R1LV0108ESF-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESF-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESF-5SI#B1?
For technical support, including R1LV0108ESF-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SI#B1 requirements.
6.How does Aetrix verify that R1LV0108ESF-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESF-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESF-5SI#B1?
All R1LV0108ESF-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESF-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV0108ESF-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESF-5SI#B1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
