My Inquiry
My Account
Renesas R1LV0108ESF-5SI#S0
- Part No.:
- R1LV0108ESF-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV0108ESF-5SI#S0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,223
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0108ESF-5SI#S0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, operating on a single 2.7–3.6 V supply and delivering 0.6 µA typical standby current at 3.0 V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion-used in battery-backed industrial controllers and portable instrumentation where data retention and low quiescent power are critical.
For engineers reviewing the R1LV0108ESF-5SI#S0 datasheet, R1LV0108ESF-5SI#S0 pinout, R1LV0108ESF-5SI#S0 application, or R1LV0108ESF-5SI#S0 equivalent, key selection criteria include its -40°C to +85°C industrial temperature rating, TSOP-II (8mm × 20mm, 32-pin) package, 30 ns OE# access time, and support for OR-tie bus sharing via three-state outputs.
Technical Context
This LPSRAM implements a full CMOS static memory architecture with separate address and data buffers, row/column decoders, and sense/write amplifiers-no internal clocks or refresh circuitry required. Its dual chip select logic enables hierarchical memory mapping: CS2 controls buffer enable while CS1# selects active device state, allowing interleaved or banked configurations without external glue logic.
The device supports two independent data retention modes: one triggered by CS2 ≤ 0.2 V (full address buffer disable), and another by CS1# ≥ Vcc−0.2 V with CS2 held high or low-both enabling 2.0–3.6 V retention voltage and sub-µA ICCDR down to 0.6 µA at 25°C. Output timing is referenced to 1.5 V with 5 ns rise/fall times under 30 pF load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 131,072 words × 8 bits = 1 Mb; supports byte-wide parallel interface with no word alignment constraints. |
| Access time | 55 ns max tAA and tACS1/tACS2; ensures compatibility with 18 MHz bus timing in microcontroller-based systems. |
| Supply voltage | 2.7–3.6 V single rail; eliminates need for level shifters when interfacing with 3.3 V logic families. |
| Standby current | 0.6 µA typical at 3.0 V/25°C; enables >1-year battery backup in SRAM-critical applications like real-time clocks and configuration storage. |
| Operating temperature | -40°C to +85°C (I-grade); qualified for deployment in industrial automation, transportation, and outdoor embedded equipment. |
| Data retention voltage | 2.0–3.6 V minimum; allows operation down to 2.0 V during brown-out or battery sag while preserving stored data. |
| Output enable delay | 30 ns max tOE; guarantees valid data within one cycle of OE# assertion, supporting tight read-response deadlines. |
Pinout & Package
Package: 32-pin TSOP (Type II, normal-bend, 8 mm × 20 mm, PTSA0032KA-A footprint).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131k-word decoding; A16 is MSB for 1Mb density. |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state control; enables OR-tie connection for shared bus architectures. |
| CS1#, CS2 | Chip select inputs | CS2 enables internal buffers; CS1# selects active device-dual CS allows 2× memory expansion without address decoding logic. |
| WE# | Write enable | Active-low asynchronous write strobe; write occurs on overlap of CS1# low, CS2 high, and WE# low. |
| OE# | Output enable | Controls output driver Z-state; prevents bus contention during multi-device reads or idle cycles. |
| Vcc, Vss | Power and ground | Single 2.7–3.6 V supply; Vss is dedicated ground reference for all I/O and core logic. |
| NC | No connect | Pin 1 (top-left corner in standard orientation); must remain unconnected per design specification. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | True static RAM architecture eliminates periodic refresh cycles-reduces CPU overhead and simplifies firmware. |
| TTL-compatible I/O | VIH = 2.0 V min, VIL = 0.6 V max; interoperates directly with legacy 5 V-tolerant or 3.3 V microcontrollers without level translation. |
| OR-tie capability | Three-state outputs allow multiple R1LV0108ESF-5SI#S0 devices to share a common data bus using wired-OR logic. |
| Dual chip select | CS1# and CS2 provide hierarchical selection-CS2 gates buffers, CS1# enables memory array-enabling flexible bank switching. |
| Low-voltage data retention | Operates down to 2.0 V with <10 µA ICCDR at +85°C; sustains memory contents during extended power loss or battery depletion. |
Applications
| Industrial PLC Data Buffer | Portable Medical Device Memory |
|---|---|
Use Scenario: Stores runtime variables, alarm logs, and calibration coefficients in programmable logic controllers deployed in factory-floor environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical state data during brief AC outages; accessed via 8-bit parallel bus synchronized to microcontroller clock. Use Value: 0.6 µA standby current extends backup battery life beyond 2 years; -40°C to +85°C rating ensures reliability across seasonal thermal cycling. |
Use Scenario: Holds patient parameter history and sensor calibration tables in handheld ECG monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M0+ MCU; enabled only during measurement bursts to minimize average system power. Use Value: 55 ns access time meets real-time sampling deadlines; 2.0 V data retention preserves diagnostics during battery replacement. |
| Automotive Telematics Log Storage | Smart Meter Configuration Memory |
Use Scenario: Captures GPS position snapshots and CAN bus event timestamps in vehicle tracking units exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining last-known location and fault codes during ignition-off periods; interfaced via SPI-to-parallel bridge IC. Use Value: Dual CS pins simplify integration with multi-chip telemetry SoC; 8 µA ISB1 at +70°C ensures minimal drain on supercapacitor backup. |
Use Scenario: Stores tariff schedules, metering constants, and firmware update staging data in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Secure non-volatile scratchpad memory accessible only during authenticated firmware updates; isolated from main application processor. Use Value: No-refresh operation eliminates risk of data corruption during power interruptions; TSOP package supports automated optical inspection in high-volume meter assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416L-10TLI | 2Mb (128k × 16), 10 ns access, 3.3 V only, 44-pin TSOP; higher density but wider bus and faster timing. | Requires 16-bit data path redesign and tighter layout; unsuitable for space-constrained 8-bit systems. | Select only if migrating to 16-bit architecture and needing >1Mb capacity with sub-10 ns latency. |
| AS6C4008-55ZIN | 4Mb (512k × 8), 55 ns access, 2.7–3.6 V, 32-pin SOP; same speed/voltage but larger die and higher ISB (2 µA typ). | Larger SOP footprint increases PCB area; higher standby current reduces battery life in ultra-low-power designs. | Prefer when board space permits SOP and 4Mb capacity is needed-but verify ISB impact on battery runtime. |
Compared with R1LV0108ESF-5SI#S0, IS61LV102416L-10TLI offers double the bandwidth but mandates hardware redesign, while AS6C4008-55ZIN provides quadruple density at identical speed yet consumes ~3.3× more standby current-making R1LV0108ESF-5SI#S0 optimal for compact, battery-sensitive 1Mb implementations.
Availability
R1LV0108ESF-5SI#S0 is available at Aetrix Electronics and suitable for industrial automation, portable medical instrumentation, and smart utility metering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0108ESF-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV0108E Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh operation, ultra-low standby current, and industrial-grade temperature resilience-targeting portable, backup-critical, and energy-constrained systems.
FAQ
What is the maximum operating frequency supported by R1LV0108ESF-5SI#S0?
R1LV0108ESF-5SI#S0 does not use a clock signal and has no maximum operating frequency specification. Its performance is defined by access timing: 55 ns address access time (tAA) and 30 ns output enable delay (tOE). When interfaced with a microcontroller running at 18 MHz (55.5 ns period), the R1LV0108ESF-5SI#S0 meets setup/hold requirements without wait states.
Does R1LV0108ESF-5SI#S0 require an external crystal or clock source?
No, R1LV0108ESF-5SI#S0 is a static RAM and contains no internal clock circuitry. It operates asynchronously-data is written on the falling edge of WE# and read on the rising edge of OE#, both controlled entirely by the host system's timing signals. The "no clocks, no refresh" feature is explicitly confirmed in the official datasheet.
Can R1LV0108ESF-5SI#S0 retain data at 2.2 V supply voltage?
Yes, R1LV0108ESF-5SI#S0 supports data retention down to 2.0 V (VDR min), with verified operation at 2.2 V. In retention mode-activated by pulling CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V-the device draws only 0.6 µA typical current at 25°C, preserving stored data during brown-out conditions or battery discharge.
What is the meaning of "-5SI" in R1LV0108ESF-5SI#S0?
The "-5" denotes 55 ns access speed grade; "S" indicates TSOP package; "I" specifies industrial temperature range (−40°C to +85°C); "#S0" signifies embossed tape/reel packaging (1000 pcs/reel) with RoHS compliance. This full suffix confirms the part is qualified for harsh-environment deployment with automated SMT assembly support.
Is R1LV0108ESF-5SI#S0 pin-compatible with other members of the R1LV0108E family?
Yes, all R1LV0108E variants-including R1LV0108ESN (SOP), R1LV0108ESA (sTSOP), and R1LV0108ESF (TSOP)-share identical 32-pin pinouts and signal assignments. The only differences are package dimensions and thermal characteristics; PCB footprints are not interchangeable due to distinct land patterns for SOP, sTSOP, and TSOP packages.
R1LV0108ESF-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESF-5SI#S0 FAQ
1.How can I place an order for R1LV0108ESF-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESF-5SI#S0 reliable?
The price and inventory of R1LV0108ESF-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESF-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESF-5SI#S0?
R1LV0108ESF-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESF-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESF-5SI#S0?
For technical support, including R1LV0108ESF-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SI#S0 requirements.
6.How does Aetrix verify that R1LV0108ESF-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESF-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESF-5SI#S0?
All R1LV0108ESF-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESF-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0108ESF-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESF-5SI#S0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
