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Renesas R1LV0108ESF-5SI#S1

Part No.:
R1LV0108ESF-5SI#S1
Manufacturer:
Renesas
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixR1LV0108ESF-5SI#S1.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:741

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Product details

Overview

R1LV0108ESF-5SI#S1 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM with 55 ns access time, operating on a single 2.7–3.6 V supply and featuring 0.6 µA typical standby current at 3.0 V. It uses TTL-compatible I/O, supports easy memory expansion via dual chip select (CS1#, CS2), and delivers three-state outputs with OR-tie capability for bus sharing in embedded microcontroller systems.

For engineers reviewing the R1LV0108ESF-5SI#S1 datasheet, R1LV0108ESF-5SI#S1 pinout, R1LV0108ESF-5SI#S1 application, or R1LV0108ESF-5SI#S1 equivalent, key selection criteria include industrial temperature range (–40°C to +85°C), TSOP-I package compatibility, data retention down to 2.0 V, and absence of refresh circuitry for battery-backed operation.

Technical Context

This LPSRAM implements a fully static 128k-word × 8-bit memory array fabricated in 0.15 µm CMOS/TFT process, with no clocks or refresh required. Its dual chip select architecture (CS1#, CS2) enables seamless bank expansion without external logic, while OE# and WE# control lines ensure deterministic read/write timing and bus contention prevention.

The device supports two independent data retention modes-CS2-controlled (CS2 ≤ 0.2 V) or CS1#-controlled (CS1# ≥ Vcc–0.2 V)-with guaranteed data hold at Vcc as low as 2.0 V. All address (A0–A16), data (DQ0–DQ7), and control inputs are TTL-compatible, simplifying interface with legacy 5 V-tolerant microcontrollers operating at 3.3 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 Mb (131,072 × 8-bit); provides compact byte-addressable storage for firmware buffers and real-time data logging.
Access Time55 ns max; ensures compatibility with 18 MHz bus timing in microcontroller-based systems.
Supply Voltage2.7–3.6 V; supports direct connection to 3.3 V rails and battery backup without level shifting.
Standby Current0.6 µA typical at 3.0 V/25°C; enables multi-year operation on coin-cell batteries in always-on monitoring nodes.
Data Retention VCC2.0 V min; maintains SRAM contents during brown-out or backup power switchover without external supervision.
Operating Temperature–40°C to +85°C; qualified for industrial-grade deployment in automotive ECUs and factory automation controllers.
I/O InterfaceTTL-compatible inputs/outputs; eliminates need for bus transceivers when interfacing with 3.3 V microcontrollers with 5 V-tolerant pins.

Pinout & Package

Package: 32-pin plastic TSOP (normal-bend type), 8 mm × 20 mm footprint (PTSA0032KA-A), surface-mount compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
A0–A16Address Input17-bit address bus supporting full 128k-word decoding; A16 enables access beyond 64k boundary.
DQ0–DQ7Data I/OBi-directional 8-bit data bus with three-state output drivers; enables shared bus topology via OE# control.
CS1#, CS2Chip SelectDual active-low selects allow interleaved or stacked memory mapping; CS2 controls buffer enable for retention mode.
WE#Write EnableActive-low write strobe; initiates write cycle only when CS1# = L, CS2 = H, and WE# transitions low.
OE#Output EnableActive-low output gate; prevents bus contention during read cycles and enables high-impedance state for bus sharing.
Vcc, VssPower/GroundSingle 2.7–3.6 V supply; no separate I/O or core voltage rails required.
NCNo ConnectPin 1 (NC) is unconnected; must remain floating or tied to ground per layout guidelines to avoid noise coupling.

Key Features

Feature Design Value
No clock or refresh requiredEliminates system-level timing constraints and reduces MCU firmware overhead for memory management.
0.6 µA standby current (typ.)Enables >10-year data retention on CR2032 coin cell in low-duty-cycle sensor nodes.
Dual chip select (CS1#, CS2)Supports up to four 1 Mb banks using simple address decoding-no glue logic needed.
OR-tie capable outputsAllows multiple R1LV0108ESF-5SI#S1 devices to share a common data bus without external wired-OR components.
2.0 V data retention thresholdPermits seamless transition to backup power during main supply failure without data loss or controller intervention.

Applications

Industrial PLC Data Buffer Automotive Body Control Module

Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers with intermittent power.

IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical state during brown-out events; accessed via parallel bus from ARM Cortex-M4 MCU.

Use Value: Eliminates need for external EEPROM write cycles and wear leveling, reducing firmware complexity and extending system lifetime.

Use Scenario: Holding door lock status, window position, and lighting presets in automotive body control units with battery backup.

IC Role / Device Role / Timing Role: Low-power SRAM serving as volatile configuration store; retains data at Vcc ≥ 2.0 V during engine cranking dips.

Use Value: Ensures zero-latency restoration of user preferences after ignition restart without relying on slow flash writes.

Medical Portable Monitor Cache Smart Meter Firmware Stack

Use Scenario: Caching ECG waveform segments and alarm thresholds in battery-powered patient monitors requiring FDA-compliant data integrity.

IC Role / Device Role / Timing Role: High-reliability byte-access memory interfaced to MSP430FR59xx MCU; operates continuously at –40°C to +85°C.

Use Value: Guarantees deterministic 55 ns read latency for real-time signal processing while consuming <1 µA in sleep mode.

Use Scenario: Hosting dynamic variables and communication stack buffers in ANSI C12.22-compliant smart electricity meters with tamper detection.

IC Role / Device Role / Timing Role: Parallel-memory extension for 8-bit RISC MCU; accessed during DLMS/COSEM protocol parsing and encryption operations.

Use Value: Provides sufficient bandwidth for AES-128 encryption of metering data without stalling the main processor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62128ELL-55ZSXIT55 ns access, 32-pin SOIC package (not TSOP), higher 2 µA standby current at 3.0 V.Lacks sTSOP/TSOP footprint compatibility; requires PCB redesign for board space-constrained designs.Choose when SOIC hand-soldering or legacy board reuse is prioritized over footprint density.
IS61LV25616AL-10TLI256K × 16-bit organization (512 Kb), 10 ns access, 44-pin TSOP-II; 3.3 V only, no 2.7 V support.Higher density but wider bus; incompatible pinout and voltage range prevents drop-in replacement.Consider only for new designs needing >1 Mb capacity and faster timing, accepting layout and firmware changes.

Compared with CY62128ELL-55ZSXIT and IS61LV25616AL-10TLI, the R1LV0108ESF-5SI#S1 uniquely balances industrial temperature range, ultra-low standby current, TSOP-I footprint, and 2.7–3.6 V flexibility-making it optimal for space- and power-constrained embedded systems where pin compatibility and battery longevity are critical.

Availability

R1LV0108ESF-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, and portable medical monitor caching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R1LV0108ESF-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0108E Series was designed specifically for low-voltage, low-power embedded memory applications requiring battery backup, simple parallel interfacing, and robust industrial temperature operation-targeting cost-sensitive, space-constrained systems.

FAQ

What is the maximum operating frequency supported by the R1LV0108ESF-5SI#S1?

The R1LV0108ESF-5SI#S1 does not use a clock signal and therefore has no operating frequency specification. Its performance is defined by access time: 55 ns maximum read/write cycle time, enabling reliable operation with microcontrollers running bus clocks up to approximately 18 MHz. Timing compliance depends on meeting setup/hold requirements per the AC characteristics table-not clock rate.

Does the R1LV0108ESF-5SI#S1 require external refresh circuitry?

No, the R1LV0108ESF-5SI#S1 is a true static RAM and requires no refresh cycles. Its fully static design eliminates all refresh overhead, making it ideal for battery-operated systems where MCU sleep modes must remain uninterrupted. This distinguishes it from DRAM or pseudo-SRAM devices that mandate periodic refresh.

Can the R1LV0108ESF-5SI#S1 retain data when Vcc drops below 2.7 V?

Yes-the R1LV0108ESF-5SI#S1 guarantees data retention down to 2.0 V under specified conditions: either CS2 ≤ 0.2 V (CS2-controlled mode) or CS1# ≥ Vcc–0.2 V with CS2 ≥ Vcc–0.2 V (CS1#-controlled mode). At 2.0 V and +25°C, typical retention current is 0.6 µA, enabling multi-year hold on small backup capacitors or coin cells.

Is the R1LV0108ESF-5SI#S1 pin-compatible with other devices in the R1LV0108E Series?

Yes-all R1LV0108E variants-including R1LV0108ESN (SOP), R1LV0108ESA (sTSOP), and R1LV0108ESF (TSOP)-share identical 32-pin pinouts and signal assignments. The R1LV0108ESF-5SI#S1 differs only in package type (TSOP), temperature grade (–40°C to +85°C), and packaging format (embossed tape), allowing direct substitution where mechanical fit permits.

What is the purpose of the NC pin on the R1LV0108ESF-5SI#S1?

Pin 1 of the R1LV0108ESF-5SI#S1 is designated NC (No Connect) and must remain electrically unconnected. Renesas specifies that this pin is internally unused and should neither be tied to Vcc nor grounded; doing so may introduce noise coupling or violate internal isolation. Layout guidelines recommend leaving it floating or covering with solder mask.

R1LV0108ESF-5SI#S1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

R1LV0108ESF-5SI#S1 FAQ

1.How can I place an order for R1LV0108ESF-5SI#S1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0108ESF-5SI#S1 reliable?

The price and inventory of R1LV0108ESF-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SI#S1 is usually 5 days.

3.What payment methods are accepted for R1LV0108ESF-5SI#S1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SI#S1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0108ESF-5SI#S1?

R1LV0108ESF-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0108ESF-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0108ESF-5SI#S1?

For technical support, including R1LV0108ESF-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SI#S1 requirements.

6.How does Aetrix verify that R1LV0108ESF-5SI#S1 is sourced from the original manufacturer or authorized distributors?

All R1LV0108ESF-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SI#S1 meets industry standards.

7.What is the process for return or replacement of R1LV0108ESF-5SI#S1?

All R1LV0108ESF-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SI#S1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0108ESF-5SI#S1 part is unused and in its original packaging.

Return procedure for R1LV0108ESF-5SI#S1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0108ESF-5SI#S1 Tags

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