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Renesas R1LV0108ESF-5SR#B0
- Part No.:
- R1LV0108ESF-5SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV0108ESF-5SR#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,952
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Product details
Overview
R1LV0108ESF-5SR#B0 from Renesas Electronics is a 1Mb low-power static RAM organized as 131,072 × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 55ns access time and 0.6µA typical standby current at 3.0V, used for battery-backed memory in portable instrumentation and industrial control modules.
For engineers reviewing the R1LV0108ESF-5SR#B0 datasheet, R1LV0108ESF-5SR#B0 pinout, R1LV0108ESF-5SR#B0 application, or R1LV0108ESF-5SR#B0 equivalent, key selection criteria include TSOP-I package compatibility, TTL-level I/O interface, no-refresh operation, and data retention down to 2.0V - critical for low-power embedded systems requiring nonvolatile backup without external controllers.
Technical Context
This device implements a fully static memory architecture with dual chip select (CS1#, CS2) enabling seamless memory expansion and OR-tie capability via three-state outputs. All address, data, and control signals are TTL-compatible, eliminating level-shifting requirements in legacy 3.3V microcontroller interfaces.
It supports two independent data retention modes: CS2-controlled (CS2 ≤ 0.2V) or CS1#-controlled (CS1# ≥ Vcc−0.2V), both permitting Vcc as low as 2.0V while maintaining data integrity - verified across −40°C to +85°C for industrial-grade operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mb (131,072 × 8-bit) - provides sufficient buffer space for real-time sensor logging or firmware parameter storage in compact edge devices. |
| Access time | 55 ns - enables direct interfacing with 16-bit MCUs running at ≤18 MHz without wait states. |
| Supply voltage | 2.7–3.6 V - compatible with single-cell Li-ion or regulated 3.3V rails, eliminating need for auxiliary voltage converters. |
| Standby current | 0.6 µA typical at 3.0V/25°C - extends battery life to years in always-on monitoring applications. |
| Data retention VCC | 2.0 V minimum - allows reliable hold during brown-out or backup battery switchover without data loss. |
| Operating temperature | 0 to +70°C - qualified for commercial-grade industrial control panels and test equipment enclosures. |
| I/O interface | TTL-compatible inputs/outputs - ensures plug-and-play integration with legacy 3.3V logic families without bus buffers. |
Pinout & Package
Package: 32-pin TSOP (normal-bend type), 8 mm × 20 mm footprint (PTSA0032KA-A), surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131k-word decoding; A16 is MSB for 1Mb capacity. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional common bus; three-state output controlled by OE# and chip selects. |
| CS1#, CS2 | Chip select | Dual enable logic: CS1# active-low + CS2 active-high required for read/write; CS2 alone enables data retention mode. |
| WE# | Write enable | Active-low signal initiating write cycle; timing overlaps with address and CS assertion per AC specs. |
| OE# | Output enable | Active-low control for output buffer; prevents bus contention when multiple devices share DQ lines. |
| Vcc, Vss | Power/Ground | Single 2.7–3.6V supply; decoupling recommended near pin 17 (Vcc) and pin 16 (Vss). |
| NC | No connection | Pin 1 (NC) must remain unconnected; not internally bonded - avoids unintended parasitic coupling. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead - reduces firmware complexity and power management burden. |
| OR-tie capability | Three-state outputs allow parallel connection of multiple R1LV0108ESF-5SR#B0 devices on shared DQ bus without external logic. |
| Low-voltage data retention | Maintains stored data at Vcc ≥ 2.0V, enabling seamless transition to backup battery or capacitor hold-up circuits. |
| Easy memory expansion | CS1#/CS2 dual-select architecture simplifies bank switching and enables up to 4× density scaling using identical parts. |
| TTL-compatible I/O | Direct interface with 3.3V microcontrollers (e.g., Renesas RL78, RA series) without level translators or pull-up resistors. |
Applications
| Portable Data Logger | Industrial HMI Panel |
|---|---|
Use Scenario: Battery-powered environmental sensor node recording temperature/humidity every 10 seconds with local FIFO buffering before wireless upload. IC Role / Device Role / Timing Role: Primary working memory for temporary data aggregation; retains content during sleep cycles powered solely by coin cell. Use Value: 0.6µA standby current extends 200mAh CR2032 battery life beyond 10 years; 55ns access enables rapid burst writes during wake-up. |
Use Scenario: Touchscreen-based operator interface in factory automation cabinet with fanless enclosure and ambient temperatures up to 65°C. IC Role / Device Role / Timing Role: Frame buffer and configuration storage for display controller; operates continuously under 3.3V rail with no thermal derating. Use Value: TSOP package fits constrained PCB space; TTL compatibility avoids signal integrity issues on long traces to MCU; 0–70°C rating matches enclosure spec. |
| Medical Diagnostic Handheld | Smart Energy Meter |
Use Scenario: Portable ECG analyzer storing waveform snippets prior to Bluetooth transmission; requires guaranteed data integrity during brief power interruptions. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding pre-processed samples; enters data retention mode when main supply drops below 2.7V. Use Value: 2.0V data retention threshold ensures zero data loss during 100ms brown-outs; no refresh eliminates risk of corruption during transient events. |
Use Scenario: ANSI C12.20-compliant electricity meter with tamper detection, storing billing intervals and event logs for >10 years. IC Role / Device Role / Timing Role: Secondary memory backing up critical metering registers; isolated from main processor to prevent accidental overwrites. Use Value: Dual CS architecture allows dedicated bank allocation; 32-pin TSOP enables automated assembly and field-replaceable module design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416L-10TLI | 1M × 16-bit organization, 10ns access, 3.3V only, 44-pin TSOP-II - higher density but wider bus and incompatible pinout. | Requires 16-bit data path redesign; unsuitable for 8-bit MCU interfaces without glue logic. | Select only if migrating to 16-bit architecture and needing faster access; not drop-in for R1LV0108ESF-5SR#B0. |
| AS6C1008-55PCN | 1M × 8-bit, 55ns access, 2.7–3.6V, 32-pin SOP - same density/speed but SOP package (525-mil) vs. TSOP (8×20mm). | Larger footprint and lower thermal performance; less suitable for high-density portable designs. | Choose for through-hole prototyping or where SOP reflow compatibility is preferred; board layout change required. |
Compared with IS61LV102416L-10TLI and AS6C1008-55PCN, the R1LV0108ESF-5SR#B0 uniquely balances 8-bit bus simplicity, TSOP-I compactness, and sub-1µA standby - making it optimal for space-constrained, battery-sensitive 3.3V embedded systems where pin compatibility and minimal BOM changes are essential.
Availability
R1LV0108ESF-5SR#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial HMI panels, and medical handhelds requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESF-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and IoT applications.
The R1LV0108E Series was designed specifically for ultra-low-power, no-refresh memory applications in battery-operated and thermally constrained embedded systems - emphasizing reliability, small footprint, and simplified interface.
FAQ
What is the maximum operating frequency supported by R1LV0108ESF-5SR#B0?
The R1LV0108ESF-5SR#B0 does not operate on a clock signal - it is a static RAM with asynchronous interface. Its 55ns access time corresponds to a maximum effective bus cycle rate of approximately 18 MHz when interfaced with a microcontroller using standard read/write strobes and no wait states.
Does R1LV0108ESF-5SR#B0 require an external refresh circuit?
No, the R1LV0108ESF-5SR#B0 is a true static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet timing specifications - eliminating refresh overhead in firmware and hardware design.
Can R1LV0108ESF-5SR#B0 be used with a 2.5V supply?
No - the R1LV0108ESF-5SR#B0 specifies a minimum supply voltage of 2.7V. Operation below 2.7V violates the Absolute Maximum Ratings and may result in data corruption or failure to meet AC timing parameters, including the 55ns access guarantee.
What is the function of the NC pin on R1LV0108ESF-5SR#B0?
Pin 1 of the R1LV0108ESF-5SR#B0 is marked NC (No Connection) and is not internally bonded. It must remain unconnected on the PCB - routing or soldering to this pin risks introducing noise coupling or mechanical stress that could affect adjacent signal integrity.
How does R1LV0108ESF-5SR#B0 achieve data retention during power loss?
The R1LV0108ESF-5SR#B0 supports two data retention modes: either assert CS2 ≤ 0.2V or assert CS1# ≥ Vcc−0.2V while maintaining Vcc ≥ 2.0V. In either mode, internal circuitry disables dynamic buffers and places the memory array in ultra-low-leakage hold state - verified to retain data for >10 years at +25°C.
R1LV0108ESF-5SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESF-5SR#B0 FAQ
1.How can I place an order for R1LV0108ESF-5SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESF-5SR#B0 reliable?
The price and inventory of R1LV0108ESF-5SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESF-5SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESF-5SR#B0?
R1LV0108ESF-5SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESF-5SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESF-5SR#B0?
For technical support, including R1LV0108ESF-5SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SR#B0 requirements.
6.How does Aetrix verify that R1LV0108ESF-5SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESF-5SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESF-5SR#B0?
All R1LV0108ESF-5SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESF-5SR#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESF-5SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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