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Renesas R1LV0108ESF-5SR#S0
- Part No.:
- R1LV0108ESF-5SR#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV0108ESF-5SR#S0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,110
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Product details
Overview
R1LV0108ESF-5SR#S0 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, single 2.7–3.6 V supply, and 0.6 µA typical standby current at 3.0 V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for easy memory expansion-designed for battery-backed embedded systems requiring reliable non-volatile data retention during power loss.
For engineers reviewing the R1LV0108ESF-5SR#S0 datasheet, R1LV0108ESF-5SR#S0 pinout, R1LV0108ESF-5SR#S0 application, or R1LV0108ESF-5SR#S0 equivalent, key selection criteria include its TSOP-I package footprint, low-voltage data retention down to 2.0 V, OR-tie capable three-state outputs, and compatibility with legacy 8-bit parallel bus architectures in portable instrumentation and industrial controllers.
Technical Context
The R1LV0108ESF-5SR#S0 implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, eliminating clocking and refresh circuitry. Its dual chip select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external logic.
All control signals (WE#, OE#, CS1#, CS2) and address/data lines are TTL-compatible with VIH = 2.0 V min and VIL = 0.6 V max. Standby mode is entered either by asserting CS2 low or holding CS1# high while CS2 is high-enabling two distinct low-power entry paths for system-level power sequencing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1 Mb (131,072 × 8-bit); supports byte-wide data transfers without multiplexing or banking logic. |
| Access Time | 55 ns max; ensures compatibility with 12–15 MHz microcontroller buses without wait states. |
| Supply Voltage | 2.7–3.6 V; matches Li-ion battery discharge profile and eliminates need for LDO regulation in portable designs. |
| Standby Current | 0.6 µA typical at 3.0 V/25°C; enables multi-year battery backup in real-time clock or configuration storage applications. |
| Data Retention VCC | 2.0 V min; guarantees data integrity during brown-out or capacitor hold-up periods without external supervision. |
| Output Drive | Three-state, OR-tie capable; allows direct wire-OR of multiple devices on shared data bus without external buffers. |
| Input Compatibility | TTL-level inputs (VIH ≥ 2.0 V, VIL ≤ 0.6 V); interfaces directly with legacy 5 V logic via pull-up resistors or level translators. |
Pinout & Package
Package: 32-pin TSOP-I (normal-bend), 8 mm × 20 mm body, JEDEC standard PTSA0032KA-A (32P3H-E) footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128k-word decoding; A16 enables access to upper half of memory space. |
| DQ0–DQ7 | Bi-directional Data I/O | Common data bus with three-state output control; supports read/write sharing on same pins without direction control. |
| CS1#, CS2 | Chip Select Inputs | CS1# active-low + CS2 active-high enable hierarchical decode; CS2=low forces standby regardless of CS1# state. |
| WE# | Write Enable | Active-low write strobe; latches data on falling edge when CS1# low and CS2 high. |
| OE# | Output Enable | Active-low gate for output drivers; prevents bus contention during read cycles when multiple devices share DQ lines. |
| Vcc, Vss | Power/Ground | Single 2.7–3.6 V supply; no separate I/O or core voltage rails required. |
| NC | No Connect | Pin 1 (NC) is unconnected; must remain floating-no tie to Vcc/Vss or signal routing. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead-reduces firmware complexity and CPU load in microcontroller-based systems. |
| Low-voltage data retention | Maintains stored data down to 2.0 V Vcc, enabling use with supercapacitor backup or single-cell LiFePO₄ batteries without auxiliary power management ICs. |
| OR-tie capable outputs | Allows multiple R1LV0108ESF-5SR#S0 devices to share a common data bus via wired-OR connection-reducing PCB layer count and BOM cost. |
| Dual chip select architecture | CS1#/CS2 combination enables seamless expansion beyond 1 Mb using external address decoding-no glue logic needed for 2–4 device banks. |
| TTL-compatible interface | Direct connection to legacy 5 V microcontrollers (e.g., 8051, PIC18) using simple resistor pull-ups-avoids dedicated level-shifter ICs. |
Applications
| Portable Medical Instrumentation | Industrial PLC Data Logging |
|---|---|
Use Scenario: Battery-powered handheld ECG monitor storing waveform snapshots during intermittent operation. IC Role / Device Role / Timing Role: Non-volatile buffer for raw sensor data between ADC sampling bursts and SD card writes. Use Value: 0.6 µA standby current extends single CR2032 battery life to >3 years; 2.0 V data retention preserves critical diagnostics during battery swap. |
Use Scenario: Compact DIN-rail PLC recording machine cycle timestamps and fault codes across power interruptions. IC Role / Device Role / Timing Role: Local SRAM cache holding last 1000 events before transfer to flash or Ethernet upload. Use Value: Dual CS architecture allows co-location with program ROM on same address bus; 55 ns access supports real-time logging at 10 kHz event rates. |
| Automotive Body Control Module | Point-of-Sale Terminal Memory Expansion |
Use Scenario: BCM retaining door lock status, window position, and mirror settings during ignition-off periods. IC Role / Device Role / Timing Role: Battery-backed configuration store interfacing directly with 8-bit automotive MCU (e.g., RL78/F13). Use Value: TTL compatibility eliminates level shifters; -40°C to +85°C rating (R1LV0108ESF-5SI variant) meets AEC-Q100 Grade 2 requirements. |
Use Scenario: Legacy POS terminal upgrading from 512 kB to 1 MB RAM for enhanced receipt printing and inventory caching. IC Role / Device Role / Timing Role: Parallel memory expansion replacing obsolete HM628128LP. Use Value: Pin-compatible replacement for industry-standard 32-pin TSOP footprint; 55 ns timing matches existing 12 MHz bus timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns access time, 3.3 V only (3.135–3.465 V), 256k × 8-bit density, 32-pin TSOP-I. | Higher speed but narrower voltage range; requires tighter Vcc regulation and lacks 2.0 V data retention. | Select when system clock exceeds 25 MHz and stable 3.3 V rail is available; not suitable for battery-discharge scenarios. |
| CY62128ELL-45ZSXIT | 45 ns access, 2.7–5.5 V supply, 128k × 8-bit, 32-pin SOIC (not TSOP); higher 2 mA standby current. | Wider voltage range but larger SOIC package; incompatible with space-constrained TSOP layouts. | Choose only if board redesign accommodates SOIC footprint and 2 mA standby is acceptable for application duty cycle. |
Compared with IS61LV10248AL-10TLI and CY62128ELL-45ZSXIT, the R1LV0108ESF-5SR#S0 uniquely balances ultra-low standby current (0.6 µA), wide 2.7–3.6 V operation, and true 2.0 V data retention-all in a compact 32-pin TSOP-I package-making it optimal for battery-sensitive, space-constrained embedded systems where reliability during brown-out is critical.
Availability
R1LV0108ESF-5SR#S0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial PLC data logging, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESF-5SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed as a drop-in upgrade path for legacy 5 V SRAMs in battery-operated and low-power embedded systems-emphasizing ease of migration, reduced system power, and long-term data retention without refresh overhead.
FAQ
What is the operating temperature range for R1LV0108ESF-5SR#S0?
The R1LV0108ESF-5SR#S0 is rated for 0°C to +70°C ambient operation (R-version). This specification is confirmed in the Ordering Information table on page 2 of the R10DS0152EJ0100 datasheet, where "R" denotes the commercial temperature grade. For extended temperature applications, the R1LV0108ESF-5SI#S* variant supports –40°C to +85°C.
Does R1LV0108ESF-5SR#S0 require an external clock or refresh circuit?
No, the R1LV0108ESF-5SR#S0 is a fully static RAM and requires neither an external clock nor periodic refresh cycles. Its internal design uses flip-flop-based memory cells that retain data indefinitely as long as power is applied-confirmed in the Features section (page 1) and Operation Table (page 5) of the R10DS0152EJ0100 datasheet.
What package type does R1LV0108ESF-5SR#S0 use, and is it RoHS compliant?
R1LV0108ESF-5SR#S0 uses an 8 mm × 20 mm 32-pin plastic TSOP-I (normal-bend) package, identified as PTSA0032KA-A (32P3H-E) in the datasheet. RoHS compliance is confirmed in the Colophon (page 12), which states adherence to EU RoHS Directive and environmental compatibility per Renesas policy-verified through standard material declarations.
Can R1LV0108ESF-5SR#S0 retain data at voltages below 2.7 V?
Yes, the R1LV0108ESF-5SR#S0 maintains data integrity down to 2.0 V Vcc during standby, as specified in the Low Vcc Data Retention Characteristics table (page 12). This capability is enabled by dual retention modes controlled via CS1# or CS2, allowing operation during battery discharge or capacitor hold-up without data loss.
How does the dual chip select (CS1# and CS2) function in R1LV0108ESF-5SR#S0?
In the R1LV0108ESF-5SR#S0, CS1# (active-low) and CS2 (active-high) operate together to enable memory access: both must be asserted (CS1# = L, CS2 = H) for read/write operations. CS2 alone can force standby (CS2 = L), while CS1# high with CS2 high also enters standby-providing flexible power management options documented in the Operation Table (page 5).
R1LV0108ESF-5SR#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0108ESF-5SR#S0 FAQ
1.How can I place an order for R1LV0108ESF-5SR#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESF-5SR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESF-5SR#S0 reliable?
The price and inventory of R1LV0108ESF-5SR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESF-5SR#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESF-5SR#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESF-5SR#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESF-5SR#S0?
R1LV0108ESF-5SR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESF-5SR#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESF-5SR#S0?
For technical support, including R1LV0108ESF-5SR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESF-5SR#S0 requirements.
6.How does Aetrix verify that R1LV0108ESF-5SR#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESF-5SR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESF-5SR#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESF-5SR#S0?
All R1LV0108ESF-5SR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESF-5SR#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESF-5SR#S0 part is unused and in its original packaging.
Return procedure for R1LV0108ESF-5SR#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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