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Renesas R1LV0108ESN-5SI#B0
- Part No.:
- R1LV0108ESN-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-5SI#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,325
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Product details
Overview
R1LV0108ESN-5SI#B0 from Renesas Electronics is a 1Mb low-power static RAM organized as 131,072 × 8-bit, operating from a single 2.7V–3.6V supply, with 55 ns access time and 0.6 µA typical standby current at 3.0V. It serves as non-volatile memory backup buffer in battery-powered instrumentation and portable medical devices requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1LV0108ESN-5SI#B0 datasheet, R1LV0108ESN-5SI#B0 pinout, R1LV0108ESN-5SI#B0 application, or R1LV0108ESN-5SI#B0 equivalent, key selection criteria include its dual chip select architecture (CS1#/CS2), common I/O bus with three-state outputs, and guaranteed data retention down to 2.0V Vcc - critical for low-power embedded systems with intermittent power sources.
Technical Context
The R1LV0108ESN-5SI#B0 implements a fully static 128k-word × 8-bit memory array using Renesas' 0.15 µm CMOS process, eliminating refresh circuitry and clock inputs. Its dual chip select (CS1# active-low, CS2 active-high) enables hierarchical memory expansion without external logic.
Read and write operations are controlled by independent OE# (output enable) and WE# (write enable) signals, supporting OR-tie capability via three-state outputs and preventing bus contention. Data retention mode activates when CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V with CS2 ≥ Vcc−0.2V, sustaining memory contents at Vcc as low as 2.0V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 131,072 words × 8 bits = 1 Mb; supports byte-wide data transfers without width conversion logic |
| Access time | 55 ns max; ensures compatibility with 18 MHz bus timing in microcontroller-based systems |
| Supply voltage | 2.7V–3.6V single rail; eliminates need for dual-supply regulators in portable designs |
| Standby current | 0.6 µA typical at 3.0V/25°C; extends battery life in always-on monitoring applications |
| Data retention Vcc | 2.0V min; maintains stored values during brown-out or battery-swapping events |
| I/O interface | TTL-compatible inputs/outputs; interfaces directly with legacy 5V-tolerant MCUs without level shifters |
| Operating temp | −40°C to +85°C; qualified for industrial and automotive cabin-ambient environments |
Pinout & Package
Package: 525-mil 32-pin plastic SOP (Small Outline Package), lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 128k-word decoding; A16 enables high-address range selection |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state output control; enables shared bus topology |
| CS1#, CS2 | Chip select | CS1# active-low + CS2 active-high allow hierarchical memory banking and seamless expansion |
| WE#, OE# | Control input | Separate write and output enable permits simultaneous read/write arbitration in multi-master systems |
| Vcc, GND | Power | Single 2.7–3.6V supply with dedicated ground pin; decoupling capacitor placement critical for noise immunity |
| NC | No connection | Pin 9 is unconnected; must remain floating - no internal tie or test function |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller and associated timing overhead in battery-backed systems |
| Dual chip select (CS1#/CS2) | Enables direct cascading of up to four R1LV0108E devices without address decoder logic |
| Low Vcc data retention | Maintains valid data at Vcc = 2.0V, supporting safe shutdown and fast wake-up in energy-harvesting nodes |
| TTL-compatible I/O | Direct interface with legacy 3.3V/5V MCUs and FPGAs without level-shifting components |
| OR-tie capable outputs | Allows multiple R1LV0108ESN-5SI#B0 devices to share a common data bus without external bus transceivers |
Applications
| Portable ECG Monitor | Industrial PLC Data Logger |
|---|---|
Use Scenario: Continuous acquisition of analog ECG waveforms sampled at 1 kHz, buffered in real time before wireless transmission. IC Role / Device Role / Timing Role: Primary SRAM buffer holding 30+ seconds of raw waveform data; operates in low-power standby between sampling bursts. Use Value: 0.6 µA standby current extends coin-cell battery life beyond 12 months; 55 ns access enables real-time buffering without MCU intervention. | Use Scenario: Local storage of sensor readings (temperature, pressure, flow) during network outages in remote oil-field telemetry units. IC Role / Device Role / Timing Role: Non-volatile shadow memory that retains critical logs during 24-hour power loss events. Use Value: Guaranteed data retention at 2.0V Vcc ensures integrity even during deep brown-out; −40°C to +85°C rating matches outdoor enclosure conditions. |
| Handheld Barcode Scanner | Automotive Infotainment Display Cache |
Use Scenario: Temporary storage of decoded barcode payloads and firmware update fragments during Bluetooth LE handshaking. IC Role / Device Role / Timing Role: High-speed scratchpad memory accessed by ARM Cortex-M4 core during burst-mode decode cycles. Use Value: 55 ns access time synchronizes with 18 MHz system bus; TTL compatibility avoids signal integrity issues on compact PCB layouts. | Use Scenario: Frame buffer for 800×480 LCD rendering in head-unit displays where GPU bandwidth is constrained. IC Role / Device Role / Timing Role: Dedicated 1MB display memory mapped into ARM A53's AXI bus, isolated from main DDR to reduce latency jitter. Use Value: Dual CS# pins simplify memory mapping across multiple display layers; three-state outputs prevent bus conflicts during GPU context switches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit organization, 10 ns access, 3.3V only, 44-pin TSOP | Higher density and speed but requires wider data bus and faster timing margins | Select when system demands >1Mb capacity or sub-10ns latency; not drop-in compatible due to pin count and bus width mismatch |
| AS6C4008-55ZIN | 512K × 8-bit, 55 ns access, 2.7–3.6V, 32-pin SOP, 1.5 µA standby (typ) | Near-identical package and timing but higher standby current reduces battery runtime | Acceptable for cost-sensitive industrial logging where 0.6 µA vs. 1.5 µA standby has minimal impact on total system lifetime |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV0108ESN-5SI#B0 uniquely balances ultra-low standby current (0.6 µA), 55 ns timing, and 32-pin SOP footprint - making it optimal for space-constrained, battery-critical applications where neither higher speed nor larger density justifies layout or power trade-offs.
Availability
R1LV0108ESN-5SI#B0 is available at Aetrix Electronics and suitable for portable medical devices, industrial data loggers, and handheld scanners requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for R1LV0108ESN-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh operation, extended data retention, and TTL-level interoperability - targeting portable instrumentation and edge-sensing nodes.
FAQ
What is the maximum operating frequency supported by the R1LV0108ESN-5SI#B0?
The R1LV0108ESN-5SI#B0 does not use a clock signal and therefore has no operating frequency specification. Its performance is defined by access timing: 55 ns maximum address access time (tAA) and 55 ns read cycle time (tRC), enabling reliable operation with microcontrollers running up to ~18 MHz bus clocks. The R1LV0108ESN-5SI#B0 relies on asynchronous control signals (CS1#, CS2, OE#, WE#) rather than synchronous clocking.
Does the R1LV0108ESN-5SI#B0 require an external refresh circuit?
No, the R1LV0108ESN-5SI#B0 is a true static RAM and requires no external refresh circuitry. Its 0.15 µm CMOS design sustains data indefinitely as long as power and valid control signals are maintained. This eliminates refresh overhead in firmware and simplifies hardware design - a key advantage over DRAM or pseudo-SRAMs. The R1LV0108ESN-5SI#B0 remains fully static across its entire −40°C to +85°C operating range.
Can the R1LV0108ESN-5SI#B0 retain data when Vcc drops below 2.7V?
Yes, the R1LV0108ESN-5SI#B0 guarantees data retention down to Vcc = 2.0V under specified conditions: either CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V with CS2 ≥ Vcc−0.2V. At 25°C, typical data retention current is 0.6 µA. This feature allows safe operation during brown-out events, battery replacement, or energy-harvesting intermittency - a core design objective confirmed in the R1LV0108E Series datasheet (R10DS0271EJ0200).
What is the function of the NC pin on the R1LV0108ESN-5SI#B0?
Pin 9 on the R1LV0108ESN-5SI#B0 is marked NC (No Connection) and is internally unconnected. It must be left floating - neither tied to Vcc nor GND - and carries no test, debug, or configuration function. This is explicitly confirmed in the Pin Description table (Page 3) and Pin Arrangement diagrams (Page 2) of the official Renesas datasheet R10DS0271EJ0200 Rev.2.00. Misconnecting the NC pin may compromise device reliability.
How does the dual chip select (CS1# and CS2) architecture improve memory expansion with the R1LV0108ESN-5SI#B0?
The R1LV0108ESN-5SI#B0 uses CS1# (active-low) and CS2 (active-high) to enable hierarchical decoding: CS2 selects memory bank groups, while CS1# selects individual devices within a group. This allows up to four R1LV0108ESN-5SI#B0 devices to be expanded without external logic - for example, using A17/A18 to drive CS2 and CS1# across devices. The R1LV0108ESN-5SI#B0 datasheet confirms this capability under "Easy memory expansion by CS1# and CS2" in the Features section.
R1LV0108ESN-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-5SI#B0 FAQ
1.How can I place an order for R1LV0108ESN-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-5SI#B0 reliable?
The price and inventory of R1LV0108ESN-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-5SI#B0?
R1LV0108ESN-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-5SI#B0?
For technical support, including R1LV0108ESN-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0108ESN-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-5SI#B0?
All R1LV0108ESN-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESN-5SI#B0 Tags
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