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Renesas R1LV0108ESN-5SI#B1
- Part No.:
- R1LV0108ESN-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-5SI#B1.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:300
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Product details
Overview
R1LV0108ESN-5SI#B1 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, single 2.7–3.6 V supply, and 0.6 µA typical standby current at 3.0 V. It operates across –40°C to +85°C and is packaged in a 32-pin SOP for battery-backed memory applications requiring no refresh and TTL-compatible interfacing.
For engineers reviewing the R1LV0108ESN-5SI#B1 datasheet, R1LV0108ESN-5SI#B1 pinout, R1LV0108ESN-5SI#B1 application, or R1LV0108ESN-5SI#B1 equivalent, key selection criteria include low-voltage data retention down to 2.0 V, dual chip select architecture (CS1#/CS2), three-state OR-tie capable I/Os, and compatibility with legacy SRAM-based microcontroller interfaces without clocking or refresh circuitry.
Technical Context
The R1LV0108ESN-5SI#B1 implements a fully static 128k-word × 8-bit memory array using Renesas' 0.15 µm CMOS/TFT process. Its dual chip select (CS1# active-low, CS2 active-high) enables hierarchical memory expansion, while write enable (WE#) and output enable (OE#) provide independent control of write cycles and bus contention avoidance.
It supports true static operation-no clocks, no refresh-and delivers guaranteed 55 ns read/write cycle timing under industrial temperature and voltage conditions (Vcc = 2.7–3.6 V, Ta = –40°C to +85°C). Data retention remains valid at Vcc as low as 2.0 V when CS1# or CS2 is asserted into retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mb (131,072 × 8-bit); matches 8-bit microcontroller data bus width without byte masking logic |
| Access time | 55 ns max; ensures compatibility with 12–15 MHz bus systems without wait states |
| Supply voltage | 2.7–3.6 V; supports direct connection to 3.3 V rails and brown-out tolerant battery backup |
| Standby current | 0.6 µA typical at 3.0 V/25°C; enables multi-year operation on coin-cell backup power |
| Data retention VCC | 2.0 V min; allows memory hold during deep sleep or power-fail scenarios without external regulators |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade embedded control and instrumentation |
| I/O interface | TTL-compatible inputs/outputs; eliminates level-shifting requirements in legacy 5 V–3.3 V mixed-signal designs |
Pinout & Package
Package: 525-mil 32-pin plastic SOP (Small Outline Package), lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 128k-word decoding; A16 enables 1 Mb addressing |
| DQ0–DQ7 | Data input/output | Bi-directional 8-bit data bus with three-state outputs; supports OR-tie for shared-bus memory expansion |
| CS1#, CS2 | Chip select controls | CS1# (active-low) and CS2 (active-high) allow hierarchical decoding and low-power retention mode selection |
| WE#, OE# | Write and output enable | Independent control of write cycles and bus drive; OE# prevents contention during read multiplexing |
| Vcc, GND | Power supply | Single 2.7–3.6 V supply; no separate VDDQ or ground separation required |
| NC | No connection | Pin 9 is unconnected; must be left floating or tied to GND per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller, timer interrupts, or DRAM-like timing overhead in firmware |
| Dual chip select (CS1#/CS2) | Enables seamless memory banking and low-power retention mode without external logic |
| 0.6 µA standby current | Reduces battery load to <1 µA in sleep mode-critical for portable medical and metering devices |
| 2.0 V data retention | Maintains stored values during brown-out or backup-only operation without data loss |
| TTL-compatible I/O | Direct interface with legacy 5 V microcontrollers via 3.3 V tolerant inputs and 3.3 V outputs |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Continuous ECG waveform capture and local storage during battery-powered operation with periodic wireless upload. IC Role / Device Role / Timing Role: Non-volatile data buffer holding up to 128k samples before transmission; retains data during power transitions. Use Value: 0.6 µA standby current extends battery life beyond 3 years; 2.0 V retention ensures data integrity during 3.3 V rail collapse. | Use Scenario: Real-time logging of sensor inputs and control state history in a DIN-rail mounted programmable logic controller. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data buffering between scan cycles and non-volatile backup. Use Value: 55 ns access time meets deterministic scan-cycle deadlines; dual CS pins simplify modular backplane memory mapping. |
| Smart Meter Firmware Cache | Automotive Body Control Module |
Use Scenario: Storing calibrated ADC coefficients and tariff tables in electricity meters with tamper-resistant backup power. IC Role / Device Role / Timing Role: Read-only configuration memory accessed during boot and calibration routines; retained during mains failure. Use Value: TTL compatibility avoids level shifters in cost-sensitive meter designs; industrial temp range ensures field reliability. | Use Scenario: Temporary storage of door lock status, window position, and lighting sequences in low-power vehicle modules. IC Role / Device Role / Timing Role: Low-quiescent memory for volatile state tracking during ignition-off periods with battery backup. Use Value: 32-pin SOP footprint fits constrained PCB space; 2.0 V retention aligns with automotive battery droop profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit, 10 ns access, 3.3 V only, 44-pin TSOP | Higher density and speed but wider bus and larger package; requires PCB redesign | Select when 16-bit data path and faster timing are needed; not drop-in compatible with R1LV0108ESN-5SI#B1 |
| AS6C4008-55PCN | 512K × 8-bit, 55 ns access, 2.7–3.6 V, 32-pin SOP | Double density with identical timing, voltage, and package; pinout differs due to extra address lines | Consider for future-proofing where higher capacity is acceptable and A17/A18 routing can be accommodated |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV0108ESN-5SI#B1 offers optimal fit for legacy 8-bit systems needing minimal board changes, lowest standby power, and proven industrial temperature stability in SOP packaging.
Availability
R1LV0108ESN-5SI#B1 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and smart meter firmware caches requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for R1LV0108ESN-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed specifically for ultra-low-power, battery-backed memory applications where zero-refresh operation, wide supply tolerance, and industrial temperature resilience are mandatory design requirements.
FAQ
What is the minimum supply voltage required for data retention in R1LV0108ESN-5SI#B1?
The R1LV0108ESN-5SI#B1 maintains data integrity down to 2.0 V when placed in retention mode via CS1# or CS2 assertion. This is verified across the full industrial temperature range (–40°C to +85°C) and enables reliable operation during brown-out events or battery voltage sag. The R1LV0108ESN-5SI#B1 does not require external retention circuitry or auxiliary power sources to sustain memory contents at this voltage.
Does R1LV0108ESN-5SI#B1 require a clock signal or refresh cycles?
No, the R1LV0108ESN-5SI#B1 is a fully static RAM and operates without any clock input or periodic refresh cycles. Its internal latch-based memory cells retain data indefinitely as long as power and valid control signals are maintained. This eliminates firmware overhead, timing constraints, and external refresh circuitry-making the R1LV0108ESN-5SI#B1 ideal for simple, deterministic embedded systems.
Can R1LV0108ESN-5SI#B1 be used in a 5 V system?
The R1LV0108ESN-5SI#B1 is specified for 2.7–3.6 V operation and features TTL-compatible inputs that accept VIH ≥ 2.0 V and VIL ≤ 0.6 V. While it cannot be powered from 5 V, its inputs are 5 V tolerant only if clamped externally; direct 5 V signaling risks damage. For 5 V microcontrollers, level translation or pull-up/pull-down networks are required-R1LV0108ESN-5SI#B1 is best suited for native 3.3 V systems.
What is the function of the NC pin on R1LV0108ESN-5SI#B1?
Pin 9 on the R1LV0108ESN-5SI#B1 is marked NC (No Connection) and is internally unconnected. Renesas documentation specifies that this pin must remain unconnected-neither tied to Vcc nor GND-to avoid unintended coupling or leakage paths. PCB layout should isolate this pad, and routing should avoid placing traces or vias beneath it to maintain signal integrity and thermal performance.
How does the dual chip select (CS1# and CS2) architecture benefit system design with R1LV0108ESN-5SI#B1?
The R1LV0108ESN-5SI#B1's CS1# (active-low) and CS2 (active-high) allow flexible memory partitioning and low-power state control. When CS2 is low, the device enters standby regardless of CS1#; when CS2 is high and CS1# is low, normal read/write operations occur. This enables hierarchical decoding, bank selection, and retention mode activation without additional logic-reducing component count and simplifying firmware memory management for the R1LV0108ESN-5SI#B1.
R1LV0108ESN-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-5SI#B1 FAQ
1.How can I place an order for R1LV0108ESN-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-5SI#B1 reliable?
The price and inventory of R1LV0108ESN-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-5SI#B1?
R1LV0108ESN-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-5SI#B1?
For technical support, including R1LV0108ESN-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-5SI#B1 requirements.
6.How does Aetrix verify that R1LV0108ESN-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-5SI#B1?
All R1LV0108ESN-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESN-5SI#B1 Tags
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