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Renesas R1LV0108ESN-5SI#S0
- Part No.:
- R1LV0108ESN-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-5SI#S0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,181
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Product details
Overview
R1LV0108ESN-5SI#S0 from Renesas Electronics is a 1Mb low-power static RAM organized as 131,072 × 8-bit, operating on a single 2.7V–3.6V supply, with 55 ns access time and 0.6 µA typical standby current at 3.0V. It serves as non-volatile backup memory in battery-powered instrumentation and portable medical devices requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1LV0108ESN-5SI#S0 datasheet, R1LV0108ESN-5SI#S0 pinout, R1LV0108ESN-5SI#S0 application, or R1LV0108ESN-5SI#S0 equivalent, key selection criteria include its dual chip select architecture (CS1#/CS2), common I/O bus with three-state outputs, low-voltage data retention down to 2.0V, and compatibility with 32-pin SOP packaging for legacy PCB layouts.
Technical Context
The R1LV0108ESN-5SI#S0 implements a fully static memory array with no internal clocks or refresh circuitry, relying on CMOS address decoding and sense/write amplifiers. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory expansion without external glue logic.
Operation supports asynchronous read/write cycles with independent OE#-controlled output gating and WE#-controlled write strobing. Data retention mode is activated by either CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V with CS2 ≥ Vcc−0.2V, enabling ultra-low-current hold states below 2.0V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 131,072 words × 8 bits = 1 Mbit; supports byte-wide data paths without multiplexing. |
| Access time | 55 ns max; ensures timing compliance in 18 MHz bus systems with setup/hold margin. |
| Supply voltage | 2.7V–3.6V; compatible with 3.3V logic rails and brown-out tolerant down to 2.0V for data retention. |
| Standby current | 0.6 µA typical at 3.0V/25°C; enables multi-year battery life in always-on backup applications. |
| I/O interface | TTL-compatible inputs and outputs; eliminates level-shifter requirements in mixed-voltage systems. |
| Package | 32-pin SOP (525-mil); footprint matches industry-standard memory socket layouts. |
| Data retention VCC | 2.0V min; maintains stored data during deep sleep or power-fail conditions without external capacitor hold-up. |
Pinout & Package
Package: 32-pin plastic SOP (525-mil width), RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131k-word addressing; no multiplexing required. |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state control; enables OR-tie for memory expansion. |
| CS1#, CS2 | Chip select inputs | Complementary enable logic: CS1# active-low + CS2 active-high allows hierarchical decode. |
| WE# | Write enable | Active-low write strobe; initiates write on falling edge with tWP ≥ 45 ns minimum pulse width. |
| OE# | Output enable | Active-low gate for DQ outputs; prevents bus contention when disabled (high-Z state). |
| Vcc, GND | Power terminals | Single 2.7–3.6V supply; decoupling recommended within 10 mm of Vcc pin per datasheet layout guidelines. |
| NC | No connection | Pin 9 is unconnected; must remain floating-no tie to Vcc/GND or routing. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and associated timing constraints in microcontroller-based designs. |
| Dual chip select (CS1#/CS2) | Enables seamless memory banking up to 4× density using only two control lines-no address-line decoding logic needed. |
| Low-voltage data retention | Maintains valid data at Vcc = 2.0V, supporting fail-safe storage during brown-out or battery-swapping events. |
| Three-state OR-tie capable outputs | Allows parallel connection of multiple R1LV0108ESN-5SI#S0 devices on shared data bus without external bus transceivers. |
| TTL-compatible signaling | Direct interface with legacy 3.3V/5V microcontrollers and FPGAs-no level translation components required. |
Applications
| Portable ECG Monitors | Industrial PLC Data Loggers |
|---|---|
Use Scenario: Continuous acquisition of analog ECG waveforms at 1 kS/s with local buffering before wireless transmission. IC Role / Device Role / Timing Role: Primary SRAM buffer holding 30+ seconds of raw waveform data; operates in low-power standby between acquisitions. Use Value: 0.6 µA standby current extends coin-cell battery life beyond 5 years; 55 ns access enables real-time waveform capture without CPU intervention. | Use Scenario: Cyclic logging of sensor readings (temperature, pressure, flow) into non-volatile memory during mains power loss. IC Role / Device Role / Timing Role: Backup memory holding last 10,000 timestamped records; retains data during 24-hour AC outage via supercapacitor hold-up. Use Value: 2.0V data retention threshold aligns with supercap discharge curve; dual CS logic simplifies FPGA-based memory controller design. |
| Handheld Barcode Scanners | Avionics Cabin Control Units |
Use Scenario: Storing decoded barcode payloads and firmware update fragments during intermittent Bluetooth LE communication. IC Role / Device Role / Timing Role: Temporary payload buffer between image sensor DMA and BLE stack; powered only during scan bursts. Use Value: Zero-refresh operation avoids timing jitter in real-time decode pipelines; TTL compatibility eliminates level-shifters in cost-sensitive consumer designs. | Use Scenario: Capturing flight-critical cabin environmental data (O₂, CO₂, humidity) during power transition between main and emergency buses. IC Role / Device Role / Timing Role: Fail-safe memory holding last 5 minutes of sensor history; powered from isolated 3.3V rail with brown-out detection. Use Value: Guaranteed data integrity at Vcc = 2.0V meets DO-160 Section 16 transient immunity requirements; SOP package supports conformal coating for harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1024L-10TLI | 10 ns faster access (45 ns), higher standby current (1 µA typ), same 32-pin TSOP/SOP footprint. | Preferred where system clock > 22 MHz demands tighter timing margins; less suitable for ultra-low-power battery backup. | Select IS61LV1024L-10TLI only if 45 ns access is mandatory and standby current budget allows ≥1 µA. |
| AS6C1008-55ZIN | Same 55 ns speed, 1.5 µA standby current, identical 32-pin SOP pinout and signal definitions. | Drop-in replacement for cost-sensitive industrial designs where Renesas supply continuity is constrained. | AS6C1008-55ZIN offers direct pin-and-function compatibility but requires validation of data retention behavior below 2.2V. |
Compared with R1LV0108ESN-5SI#S0, IS61LV1024L-10TLI trades lower standby power for higher speed, while AS6C1008-55ZIN matches timing and footprint but lacks guaranteed 2.0V data retention-making R1LV0108ESN-5SI#S0 optimal for battery-backed systems demanding extended low-Vcc hold time.
Availability
R1LV0108ESN-5SI#S0 is available at Aetrix Electronics and suitable for portable medical devices, industrial data loggers, handheld scanners, and avionics subsystems requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESN-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV0108E Series was designed specifically for battery-operated and backup-memory applications where zero-refresh operation, ultra-low standby current, and robust data retention at reduced supply voltages are critical system requirements.
FAQ
What is the maximum operating temperature range for the R1LV0108ESN-5SI#S0?
The R1LV0108ESN-5SI#S0 is rated for continuous operation from −40°C to +85°C ambient temperature. This industrial-grade temperature range is validated per the Absolute Maximum Ratings table and DC Operating Conditions section of the official Renesas datasheet R10DS0271EJ0200 Rev.2.00. Thermal derating is not required within this span, and all AC/DC specifications-including 55 ns access time and 0.6 µA standby current-are guaranteed across the full range.
Does the R1LV0108ESN-5SI#S0 require an external clock or refresh signal?
No, the R1LV0108ESN-5SI#S0 is a fully static RAM and requires no external clock or periodic refresh signals. Its internal architecture uses bistable latching cells that retain data indefinitely as long as Vcc remains within specification and appropriate chip select conditions are met. This eliminates timing-critical refresh overhead in microcontroller or FPGA-based systems and reduces system-level complexity.
Can the R1LV0108ESN-5SI#S0 retain data when Vcc drops below 2.7V?
Yes, the R1LV0108ESN-5SI#S0 guarantees data retention down to Vcc = 2.0V under specified conditions: either CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V with CS2 ≥ Vcc−0.2V. At 25°C, typical data retention current is 0.6 µA. This capability is explicitly defined in the Low Vcc Data Retention Characteristics table (Page 11) of the R10DS0271EJ0200 datasheet and enables reliable operation during brown-out or battery-depletion scenarios.
Is the R1LV0108ESN-5SI#S0 pin-compatible with other 32-pin SOP SRAMs like the AS6C1008?
The R1LV0108ESN-5SI#S0 shares identical pin numbering, signal names (A0–A16, DQ0–DQ7, CS1#, CS2, WE#, OE#, Vcc, GND), and functional definitions with the AS6C1008-55ZIN in 32-pin SOP. However, pin compatibility does not guarantee full electrical or timing equivalence-specifically, AS6C1008 lacks the 2.0V data retention guarantee and exhibits higher standby current (1.5 µA). System validation is required before substitution.
What is the purpose of the NC (No Connect) pin on the R1LV0108ESN-5SI#S0?
Pin 9 on the R1LV0108ESN-5SI#S0 is designated NC (No Connect) and must remain electrically unconnected-neither tied to Vcc nor GND nor routed on the PCB. This pin is internally unused and floating; connecting it may cause unpredictable behavior or increased leakage. The requirement is documented in the Pin Description table (Page 3) and Pin Arrangement diagrams (Pages 2–3) of the R10DS0271EJ0200 datasheet.
R1LV0108ESN-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-5SI#S0 FAQ
1.How can I place an order for R1LV0108ESN-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-5SI#S0 reliable?
The price and inventory of R1LV0108ESN-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-5SI#S0?
R1LV0108ESN-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-5SI#S0?
For technical support, including R1LV0108ESN-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-5SI#S0 requirements.
6.How does Aetrix verify that R1LV0108ESN-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-5SI#S0?
All R1LV0108ESN-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESN-5SI#S0 Tags
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