My Inquiry
My Account
Renesas R1LV0108ESN-5SI#S1
- Part No.:
- R1LV0108ESN-5SI#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-5SI#S1.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,733
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0108ESN-5SI#S1 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM IC operating from 2.7V to 3.6V, featuring 55 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O - designed for battery-backed memory applications in portable instrumentation and industrial control systems.
For engineers reviewing the R1LV0108ESN-5SI#S1 datasheet, R1LV0108ESN-5SI#S1 pinout, R1LV0108ESN-5SI#S1 application, or R1LV0108ESN-5SI#S1 equivalent, key selection criteria include single-supply operation, no-refresh architecture, dual chip select (CS1#/CS2) for memory expansion, and sTSOP-32 packaging with verified 32-pin pinout and timing compliance across -40°C to +85°C.
Technical Context
The R1LV0108ESN-5SI#S1 implements a fully static 128k-word × 8-bit memory array using Renesas' 0.15 µm CMOS/TFT process, eliminating refresh circuitry and clock inputs. Its dual chip-select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external decoding logic.
Read and write operations are controlled via independent OE# and WE# signals with three-state outputs supporting OR-tie bus architectures. Standby mode is entered when CS2 is low or both CS1# is high and CS2 is high, achieving sub-1 µA retention current under Vcc ≥ 2.0V with validated data hold at 85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1 Mb (131,072 × 8-bit), enabling compact code/data storage in space-constrained embedded controllers |
| Access time | 55 ns max - supports interface with 12–15 MHz microcontrollers without wait states |
| Supply voltage | 2.7 V to 3.6 V - compatible with Li-ion battery rails and 3.3 V system domains |
| Standby current | 0.6 µA typical at 3.0 V/25°C - extends battery life in always-on backup memory applications |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade deployment in harsh environments |
| Data retention Vcc | 2.0 V min - maintains stored data during brown-out or battery-switchover events |
| I/O compatibility | TTL-level input thresholds (VIH = 2.0 V, VIL = 0.6 V) - interoperable with legacy 5 V logic via level-shifting or direct 3.3 V MCU interfacing |
Pinout & Package
Package: 32-pin sTSOP (8 mm × 13.4 mm), surface-mount, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128k-word addressing; no multiplexing required |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state output control; supports OR-tie for multi-device bus sharing |
| CS1#, CS2 | Chip select inputs | CS1# active-low + CS2 active-high enable hierarchical memory banking and seamless expansion |
| WE#, OE# | Write and output enable | Independent control of write cycles and output driver state - prevents bus contention during read/write transitions |
| Vcc, GND | Power supply | Single 2.7–3.6 V supply; no separate Vss/Vdd decoupling needed beyond standard 0.1 µF ceramic per power pin |
| NC | No connection | Pin 9 is unconnected - must remain floating; no PCB trace or solder mask required |
Key Features
| Feature | Design Value |
|---|---|
| No refresh / no clock required | Eliminates external timing circuitry and firmware overhead - ideal for ultra-low-power sleep modes |
| Dual chip select (CS1#/CS2) | Enables direct connection of up to four R1LV0108E devices on one bus without address decoder logic |
| Sub-1 µA standby current | Reduces quiescent power to <1 µW at 3.0 V - critical for >1-year battery-backed SRAM retention |
| TTL-compatible I/O | Direct interface with 3.3 V MCUs (e.g., Renesas RX, RA, RL78 families) without level translators |
| Data retention down to 2.0 V | Maintains valid memory contents during brown-out or backup battery transition without data loss |
Applications
| Portable Medical Devices | Industrial PLC Data Logging |
|---|---|
Use Scenario: Battery-powered glucose meters and ECG monitors requiring non-volatile parameter storage during power-off. IC Role / Device Role / Timing Role: Low-power SRAM holding calibration coefficients, patient history, and real-time sensor buffers. Use Value: 0.6 µA standby current enables >5-year coin-cell operation; 55 ns access supports rapid waveform capture. | Use Scenario: Compact programmable logic controllers capturing sensor readings during mains failure. IC Role / Device Role / Timing Role: Backup memory preserving I/O state and ladder logic variables during AC dropout. Use Value: Data retention at 2.0 V ensures integrity through brown-out; dual CS allows modular memory expansion. |
| Automotive Infotainment Head Units | Smart Meter Firmware Caching |
Use Scenario: In-vehicle infotainment systems storing UI configuration and recent navigation history. IC Role / Device Role / Timing Role: Fast-access SRAM caching user preferences and media metadata between boot cycles. Use Value: 55 ns read cycle enables responsive UI rendering; -40°C to +85°C rating meets AEC-Q200 ambient requirements. | Use Scenario: Electricity/water meters retaining firmware patch cache and billing registers during battery replacement. IC Role / Device Role / Timing Role: Non-refresh memory holding encrypted firmware segments and tamper-proof usage counters. Use Value: No-clock architecture avoids timing drift; sTSOP-32 footprint fits tight meter PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns faster access (45 ns), higher ICC1 (28 mA typ), same 32-pin TSOP package | Better suited for high-speed MCU interfaces but draws more active current | Select when system clock >18 MHz requires zero-wait-state access; verify thermal budget for sustained writes |
| AS6C4008-55TIN | Same 55 ns speed, 1.8 V–3.6 V supply range, 32-pin SOP package (wider 525-mil body) | Broader voltage flexibility but larger PCB footprint; slightly higher ISB (1.5 µA typ) | Choose for designs needing wider Vcc margin or legacy SOP assembly lines; confirm board clearance for 525-mil width |
Compared with IS61LV10248AL-10TLI and AS6C4008-55TIN, the R1LV0108ESN-5SI#S1 delivers the lowest standby current (0.6 µA) in sTSOP-32, making it optimal for battery-critical applications where active speed is secondary to energy efficiency and compact packaging.
Availability
R1LV0108ESN-5SI#S1 is available at Aetrix Electronics and suitable for portable medical devices, industrial PLC data logging, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for R1LV0108ESN-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed to deliver ultra-low-power, no-refresh SRAM for battery-backed and energy-harvesting systems where reliability, small footprint, and extended data retention are primary design constraints.
FAQ
What is the maximum operating frequency supported by the R1LV0108ESN-5SI#S1?
The R1LV0108ESN-5SI#S1 does not use a clock signal and has no maximum operating frequency specification. Instead, its 55 ns access time defines the minimum read/write cycle period - supporting effective interface rates up to ~12 MHz with appropriate setup/hold timing margins. The R1LV0108ESN-5SI#S1 relies on asynchronous control signals (CS1#, WE#, OE#) rather than synchronous clocking.
Does the R1LV0108ESN-5SI#S1 require an external refresh controller?
No, the R1LV0108ESN-5SI#S1 is a true static RAM and requires no external refresh controller or periodic access. Its CMOS/TFT-based memory cells retain data indefinitely as long as power is applied and standby conditions are met. This eliminates firmware overhead and timing-critical refresh scheduling - a core advantage of the R1LV0108ESN-5SI#S1 over DRAM or pseudo-SRAM solutions.
Can the R1LV0108ESN-5SI#S1 be used with a 5 V microcontroller?
The R1LV0108ESN-5SI#S1 is not 5 V tolerant: its absolute maximum input voltage is Vcc + 0.3 V (≤3.9 V at 3.6 V supply), and VIH is specified at 2.0 V minimum. Direct connection to 5 V logic will damage the device. To interface with 5 V MCUs, use bidirectional level translators (e.g., TXB0108) or ensure the host uses 3.3 V I/O banks. The R1LV0108ESN-5SI#S1 is designed for 3.3 V system integration.
What is the function of the NC pin on the R1LV0108ESN-5SI#S1?
Pin 9 on the R1LV0108ESN-5SI#S1 is marked NC (No Connection) and must remain unconnected - neither tied to Vcc, GND, nor routed on the PCB. It serves no electrical function and is reserved for future product variants or manufacturing test purposes. Leaving the NC pin floating is mandatory; connecting it may cause undefined behavior or latch-up per Renesas' datasheet guidance.
How does the R1LV0108ESN-5SI#S1 enter data retention mode?
The R1LV0108ESN-5SI#S1 enters data retention mode when either (1) CS2 is driven ≤0.2 V, or (2) CS1# is driven ≥Vcc−0.2 V while CS2 is held ≥Vcc−0.2 V or ≤0.2 V. In this state, internal buffers are disabled and ICCDR drops to ≤0.6 µA at 25°C, preserving memory contents down to Vcc = 2.0 V. The R1LV0108ESN-5SI#S1 requires no additional control signals - retention is purely pin-driven.
R1LV0108ESN-5SI#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-5SI#S1 FAQ
1.How can I place an order for R1LV0108ESN-5SI#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-5SI#S1 reliable?
The price and inventory of R1LV0108ESN-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-5SI#S1 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-5SI#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-5SI#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-5SI#S1?
R1LV0108ESN-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-5SI#S1?
For technical support, including R1LV0108ESN-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-5SI#S1 requirements.
6.How does Aetrix verify that R1LV0108ESN-5SI#S1 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-5SI#S1 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-5SI#S1?
All R1LV0108ESN-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-5SI#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-5SI#S1 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-5SI#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESN-5SI#S1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
