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Renesas R1LV0108ESN-5SR#B0
- Part No.:
- R1LV0108ESN-5SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-5SR#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:249
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Product details
Overview
R1LV0108ESN-5SR#B0 from Renesas Electronics is a 1Mb (128k × 8-bit) low-power static RAM with 55 ns access time, single 2.7–3.6 V supply, and 0.6 µA typical standby current at 3.0 V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for easy memory expansion - deployed in battery-backed instrumentation and portable industrial controllers.
For engineers reviewing the R1LV0108ESN-5SR#B0 datasheet, R1LV0108ESN-5SR#B0 pinout, R1LV0108ESN-5SR#B0 application, or R1LV0108ESN-5SR#B0 equivalent, key selection criteria include low-voltage data retention down to 2.0 V, OR-tie capable three-state outputs, and compatibility with legacy 32-pin SOP-based memory interfaces requiring zero-clock, non-volatile backup support.
Technical Context
This LPSRAM uses Renesas' 0.15 µm CMOS/TFT process to deliver high-density 128k-word × 8-bit storage without refresh circuitry. Its architecture integrates address buffers controlled by CS2, independent write enable (WE#) and output enable (OE#), and common bidirectional DQ0–DQ7 I/O lines with high-impedance control.
Two distinct data retention modes are supported: CS2-driven (0 V ≤ CS2 ≤ 0.2 V) or CS1#-driven (CS1# ≥ Vcc − 0.2 V), both enabling operation down to 2.0 V Vcc while maintaining data integrity. Standby current scales predictably with temperature: 0.6 µA at +25°C, rising to 10 µA at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1 Mb (131,072 × 8-bit) - supports byte-wide data buses without external multiplexing |
| Access Time | 55 ns - enables direct interface with 16–18 MHz microcontrollers without wait states |
| Supply Voltage | 2.7–3.6 V - compatible with Li-ion battery rails and regulated 3.3 V systems |
| Standby Current | 0.6 µA typical at 3.0 V / +25°C - extends battery life in always-on backup mode |
| Data Retention VCC | 2.0 V minimum - preserves contents during brown-out or battery swap |
| Operating Temp. | 0 to +70°C - qualified for commercial/industrial control panel environments |
| I/O Compatibility | TTL - interoperates with legacy 5 V logic families via level-shifting or direct 3.3 V tolerant inputs |
Pinout & Package
Package: 32-pin 525-mil plastic SOP (PRSP0032DF-A), lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Input | 17-bit address bus supporting full 128k-word decoding; A16 is MSB |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with three-state control; supports OR-tie for shared bus topology |
| CS1#, CS2 | Chip Select | Active-low dual-select enables memory banking; CS2 controls internal buffers for retention mode entry |
| WE# | Write Enable | Active-low write strobe; low pulse overlapping CS1# and CS2 initiates write cycle |
| OE# | Output Enable | Active-low control for output buffer; prevents bus contention when multiple devices share DQ lines |
| Vcc, Vss | Power/Ground | Single 2.7–3.6 V supply; decoupling required within 10 mm of Vcc pin per JEDEC guidelines |
| NC | No Connect | Pin 1 (SOP top-left corner) is unconnected; must remain floating or grounded per layout rules |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead in microcontroller-based systems |
| Low-voltage data retention | Maintains stored data at Vcc as low as 2.0 V - critical for seamless power-fail recovery |
| OR-tie capable outputs | Enables wired-OR bus architectures without external pull-ups or logic gates |
| Dual chip select (CS1#, CS2) | Supports hierarchical memory mapping and bank switching in systems with >1 MB address space |
| TTL-compatible I/O | Direct interface with legacy 5 V microcontrollers using 3.3 V tolerant input thresholds |
Applications
| Industrial Data Logger | Medical Patient Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂) with periodic flash backup and real-time display buffering. IC Role / Device Role / Timing Role: Primary volatile frame buffer and temporary event log storage between MCU and nonvolatile EEPROM. Use Value: 55 ns access ensures sub-100 µs read/write latency for real-time waveform rendering; 0.6 µA standby preserves battery for >6 months in sleep mode. |
Use Scenario: Battery-powered bedside monitor capturing vital signs during AC power loss. IC Role / Device Role / Timing Role: Retentive SRAM holding last 30 seconds of waveform data during brown-out events. Use Value: 2.0 V data retention threshold allows uninterrupted storage even as Li-ion voltage drops to end-of-discharge levels. |
| POS Terminal Memory Expansion | Programmable Logic Controller (PLC) I/O Cache |
Use Scenario: Adding local memory to embedded ARM-based point-of-sale terminals for receipt spooling and offline transaction queuing. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory interfaced directly to 32-bit data bus with no glue logic. Use Value: TTL-compatible I/O and 32-pin SOP footprint enable drop-in replacement of legacy 28-pin SRAMs without PCB redesign. |
Use Scenario: Caching digital I/O state changes in DIN-rail mounted PLCs operating in harsh factory environments. IC Role / Device Role / Timing Role: High-reliability buffer between FPGA I/O engine and host processor for deterministic scan-cycle timing. Use Value: Dual CS pins allow isolation of cache banks during firmware updates; -40 to +85°C variants available for extended thermal range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1024-55QLI | 55 ns access, 1 Mb (128k × 8), 3.3 V only (3.135–3.465 V); 1 µA max standby at 25°C | Requires tighter Vcc regulation; lacks 2.0 V data retention capability | Preferred where system already uses strict 3.3 V rail and lower leakage is prioritized over brown-out resilience |
| AS6C1008-55PCN | 55 ns access, 1 Mb (128k × 8), 2.7–3.6 V; 1.5 µA max standby at 25°C; 32-pin SOP package | Higher standby current; no documented CS2-controlled retention mode | Suitable for cost-sensitive designs where retention duration < 24 hours is acceptable and CS2 functionality is unused |
Compared with IS61LV1024-55QLI and AS6C1008-55PCN, the R1LV0108ESN-5SR#B0 uniquely combines 2.0 V data retention, 0.6 µA typical standby, and dual CS-driven memory banking - making it optimal for battery-critical, long-duration backup applications where power failure resilience is mandatory.
Availability
R1LV0108ESN-5SR#B0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, POS terminals, programmable logic controllers, and battery-backed instrumentation requiring stable component supply across multi-year production cycles.
Supply support for R1LV0108ESN-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed as an advanced low-power SRAM family targeting battery-operated and battery-backup memory applications where zero-refresh operation, wide supply tolerance, and ultra-low standby current are essential.
FAQ
What is the maximum operating temperature range for the R1LV0108ESN-5SR#B0?
The R1LV0108ESN-5SR#B0 is rated for 0 to +70°C ambient operation. This "R-version" variant is intended for commercial and industrial control applications where enclosure temperatures remain within this range. For extended temperature use (-40 to +85°C), the R1LV0108ESN-5SI#B0 variant is specified and available through Aetrix Electronics.
Does the R1LV0108ESN-5SR#B0 require an external clock or refresh signal?
No, the R1LV0108ESN-5SR#B0 is a true static RAM and requires no clock or refresh circuitry. Its architecture uses flip-flop-based memory cells that retain data indefinitely as long as Vcc is applied and CS pins are held inactive. This eliminates timing-critical refresh overhead in MCU firmware and simplifies system design.
How does data retention work on the R1LV0108ESN-5SR#B0 during power loss?
The R1LV0108ESN-5SR#B0 supports two data retention modes: CS2-controlled (0 V ≤ CS2 ≤ 0.2 V) or CS1#-controlled (CS1# ≥ Vcc − 0.2 V). In either mode, it retains stored data down to 2.0 V Vcc with typical current draw of 0.6 µA at +25°C - enabling reliable holdover during battery switchover or brown-out conditions.
Can the R1LV0108ESN-5SR#B0 be used with a 5 V microcontroller system?
Yes - all inputs and outputs of the R1LV0108ESN-5SR#B0 are TTL-compatible, meaning VIH = 2.0 V min and VIL = 0.6 V max. A 5 V MCU can drive its address, control, and data lines directly without level shifters, provided Vcc remains within 2.7–3.6 V. Outputs meet VOH ≥ 2.4 V at -0.5 mA, ensuring clean logic-high recognition.
What package type is used for the R1LV0108ESN-5SR#B0?
The R1LV0108ESN-5SR#B0 uses a 32-pin 525-mil plastic SOP (Small Outline Package) with JEDEC standard footprint PRSP0032DF-A. It is lead-free and RoHS-compliant, supplied in tubes of 25 pieces. This package is pin-compatible with other 32-pin SRAMs in SOP format, facilitating board-level substitution where thermal and timing constraints permit.
R1LV0108ESN-5SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-5SR#B0 FAQ
1.How can I place an order for R1LV0108ESN-5SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-5SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-5SR#B0 reliable?
The price and inventory of R1LV0108ESN-5SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-5SR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-5SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-5SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-5SR#B0?
R1LV0108ESN-5SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-5SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-5SR#B0?
For technical support, including R1LV0108ESN-5SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-5SR#B0 requirements.
6.How does Aetrix verify that R1LV0108ESN-5SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-5SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-5SR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-5SR#B0?
All R1LV0108ESN-5SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-5SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-5SR#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-5SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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