Renesas R1LV0108ESN-7SI#B0

Overview

R1LV0108ESN-7SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM IC operating from a single 2.7–3.6V supply, featuring 70 ns access time, -40°C to +85°C industrial temperature range, and 32-pin SOP package. It delivers 0.6 µA typical standby current at 3.0V and supports battery-backed memory systems in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV0108ESN-7SI#B0 datasheet, R1LV0108ESN-7SI#B0 pinout, R1LV0108ESN-7SI#B0 application, or R1LV0108ESN-7SI#B0 equivalent, key selection criteria include its TTL-compatible I/O, dual chip select architecture for memory expansion, no-refresh operation, and verified data retention down to 2.0V with sub-10 µA retention current at +85°C.

Technical Context

This SRAM implements a fully static 128k-word × 8-bit memory array using Renesas's 0.15 µm CMOS process, with independent address buffer control via CS2 and full TTL-level compatibility on all inputs and outputs. Its dual chip select (CS1# and CS2) enables seamless memory banking and expansion without external logic.

The device operates with zero refresh cycles and no internal clocks, relying on asynchronous read/write timing controlled by WE#, OE#, and CS signals. Data retention mode is activated either by pulling CS2 ≤ 0.2V or asserting CS1# ≥ Vcc−0.2V while holding CS2 within valid high/low bounds - enabling ultra-low-power hold states in battery-critical applications.

Key Specifications

Pinout & Package

Package: 32-pin plastic SOP (525-mil), JEDEC MS-012AC compliant, body size 13.97 mm × 17.88 mm × 2.67 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with R1LV0108ESN-7SI#B0, IS61LV25616AL-10TLI offers greater bandwidth but demands new PCB routing and 16-bit bus support, whereas AS6C4008-70SCN provides 4× memory depth in identical 32-pin SOP packaging at the cost of +85% active current - making R1LV0108ESN-7SI#B0 optimal for ultra-low-power, space-constrained 1Mb use cases.

Availability

R1LV0108ESN-7SI#B0 is available at Aetrix Electronics and suitable for industrial PLCs, portable medical instruments, smart energy meters, and automotive body control modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for R1LV0108ESN-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0108E Series was designed specifically for low-voltage, low-power static RAM applications in battery-operated and thermally demanding environments - emphasizing data retention integrity, TTL interoperability, and minimal standby current without sacrificing access speed.

FAQ

What is the maximum operating frequency supported by R1LV0108ESN-7SI#B0?

R1LV0108ESN-7SI#B0 does not operate on a clock signal - it is an asynchronous SRAM. Its 70 ns access time corresponds to a maximum effective interface rate of approximately 14.3 MHz when used with a microcontroller or FPGA driving address and control signals within specified setup/hold windows. Timing is governed entirely by tRC, tAA, and tOE parameters in the AC characteristics table, not by a system clock.

Does R1LV0108ESN-7SI#B0 require external refresh circuitry?

No, R1LV0108ESN-7SI#B0 is a true static RAM and requires no external refresh circuitry or periodic access to retain data. Its memory cells are built from cross-coupled inverters that maintain state indefinitely as long as Vcc remains within specification and CS signals are held inactive during standby. This eliminates refresh overhead in software and hardware design.

Can R1LV0108ESN-7SI#B0 be used with a 5V microcontroller system?

R1LV0108ESN-7SI#B0 operates strictly from 2.7–3.6V and is not 5V-tolerant. While its inputs meet TTL voltage thresholds (VIH ≥ 2.0V, VIL ≤ 0.6V), applying 5V signals will exceed absolute maximum ratings and cause permanent damage. Interface with 5V systems requires level translation on all address, control, and data lines - or use of a 3.3V-compatible MCU with 5V-tolerant I/O.

What is the data retention behavior of R1LV0108ESN-7SI#B0 during power loss?

R1LV0108ESN-7SI#B0 maintains stored data down to Vcc = 2.0V when placed in data retention mode - achieved by asserting CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V with CS2 held high/low. At +25°C, retention current is 0.6 µA typical; at +85°C, it rises to 10 µA max. This enables reliable hold using small backup capacitors or primary lithium cells without regulation.

Is the pinout of R1LV0108ESN-7SI#B0 compatible with other 32-pin SOP SRAMs like the CY62128EV30?

No - R1LV0108ESN-7SI#B0 uses a proprietary pin assignment optimized for Renesas' dual-CS architecture. While both are 32-pin SOP devices, CY62128EV30 places CE# and OE# on different pins and lacks CS2; its A16 is assigned to NC, whereas R1LV0108ESN-7SI#B0 uses A16 as a functional address line. Direct substitution would cause address decoding errors and bus contention.