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Renesas R1LV0108ESN-7SR#B0
- Part No.:
- R1LV0108ESN-7SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESN-7SR#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,143
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Product details
Overview
R1LV0108ESN-7SR#B0 from Renesas Electronics is a 1Mb low-power static RAM (131,072 × 8-bit) fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 70 ns access time and 0.6 µA typical standby current at 3.0V, designed for battery-backed memory systems in portable instrumentation and industrial control.
For engineers reviewing the R1LV0108ESN-7SR#B0 datasheet, R1LV0108ESN-7SR#B0 pinout, R1LV0108ESN-7SR#B0 application, or R1LV0108ESN-7SR#B0 equivalent, key selection criteria include its TTL-compatible I/O, dual chip select architecture (CS1#/CS2), common data I/O bus, three-state output capability, and support for no-refresh operation in low-voltage embedded systems.
Technical Context
This LPSRAM implements a fully asynchronous interface with no internal clocks or refresh circuitry, relying on external address and control timing. Its memory array is organized as 128k words × 8 bits, with independent column/row decoders and sense/write amplifiers enabling deterministic read/write cycles.
Chip select logic supports hierarchical memory expansion: CS1# active-low and CS2 active-high enable independent bank selection, while OE# controls output buffer tri-state behavior and WE# governs write latching-both referenced to TTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.6 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1 Mb (131,072 × 8-bit); provides byte-wide storage without external data multiplexing |
| Access time | 70 ns max; defines minimum cycle duration for reliable read/write under worst-case Vcc/Ta conditions |
| Supply voltage | 2.7–3.6 V; enables direct interfacing with 3.3 V logic and battery operation down to 2.7 V |
| Standby current | 0.6 µA typical at 3.0 V/25°C; ensures multi-year battery backup in always-on retention mode |
| I/O compatibility | TTL-level inputs and outputs; eliminates need for level-shifting when interfacing with legacy microcontrollers |
| Data retention Vcc | 2.0–3.6 V; guarantees nonvolatile data hold during brown-out or power-loss events |
| Operating temperature | 0 to +70°C; qualified for commercial-grade industrial equipment and portable test gear |
Pinout & Package
Package: 525-mil 32-pin plastic SOP (PRSP0032DF-A). Pinout validated per Renesas R10DS0152EJ0100 Rev.1.00, Page 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6 V supply rail; bypass capacitor required adjacent to pin |
| Vss | Ground | Signal reference return; must be low-impedance connection to system ground plane |
| A0–A16 | Address input | 17-bit address bus supporting full 131,072-word addressing without external decoding |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state outputs; supports OR-tie for shared-bus architectures |
| CS1# | Chip select 1 | Active-low primary enable; must be low with CS2 high for valid memory access |
| CS2 | Chip select 2 | Active-high secondary enable; used with CS1# for bank selection or data retention control |
| WE# | Write enable | Active-low write strobe; latches DQ inputs into memory array on falling edge |
| OE# | Output enable | Active-low output gate; prevents bus contention when multiple devices share DQ lines |
| NC | Non-connected | No internal connection; must remain unconnected or tied to Vss/Vcc per PCB layout rules |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead, reducing firmware complexity and power consumption |
| Dual chip select (CS1#/CS2) | Enables seamless expansion to larger memory maps using discrete logic or address decoding |
| Common data I/O bus | Reduces PCB trace count by 50% versus separate input/output buses, simplifying routing in space-constrained designs |
| Three-state outputs with OR-tie | Allows direct wire-OR connection of multiple R1LV0108ESN-7SR#B0 devices on a single data bus without external logic |
| Low-voltage data retention | Maintains stored data at Vcc as low as 2.0 V, supporting graceful shutdown and battery-swappable systems |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
Use Scenario: Battery-powered ECG monitor storing waveform snapshots between wireless uploads. IC Role / Device Role / Timing Role: Nonvolatile frame buffer holding up to 128 kB of digitized analog data with zero refresh overhead. Use Value: 0.6 µA standby current extends coin-cell life beyond 5 years; 70 ns access enables real-time display buffering without CPU wait states. | Use Scenario: Standalone environmental sensor node logging temperature/humidity every 10 seconds to local memory. IC Role / Device Role / Timing Role: Primary data scratchpad for timestamped sensor records prior to SD card transfer. Use Value: TTL compatibility allows direct connection to 8-bit MCU GPIO; dual CS pins simplify integration into multi-sensor modular backplanes. |
| Automated Test Equipment | Point-of-Sale Terminal |
Use Scenario: Benchtop oscilloscope capturing 1 Msample waveforms during triggered acquisitions. IC Role / Device Role / Timing Role: High-speed acquisition buffer interfaced to parallel ADC output bus. Use Value: 70 ns access time supports sustained 14.3 MS/s readout; common DQ bus reduces FPGA pin count for compact logic design. | Use Scenario: Retail kiosk storing transaction history and configuration settings across power cycles. IC Role / Device Role / Timing Role: Reliable nonvolatile parameter store retaining settings during AC power loss. Use Value: Data retention down to 2.0 V ensures integrity during brown-out; 32-pin SOP footprint fits standard 0.6-inch pitch connector layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1024-70TQLI | 70 ns access, 32-pin TSOP-II, 3.3 V only (3.135–3.465 V), 1 µA standby current | Higher minimum Vcc limits use in 2.7 V battery systems; TSOP-II footprint differs from SOP | Select when board uses TSOP-II mounting and system Vcc is tightly regulated at 3.3 V |
| AS6C1008-70SCN | 70 ns access, 32-pin SOP, 2.7–3.6 V, 1.5 µA standby current, no data retention below 2.7 V | Higher standby current reduces battery life; lacks guaranteed sub-2.7 V data retention mode | Select when cost sensitivity outweighs ultra-low standby or extended retention requirements |
Compared with IS61LV1024-70TQLI and AS6C1008-70SCN, the R1LV0108ESN-7SR#B0 uniquely delivers 0.6 µA standby current at 3.0 V and verified 2.0 V data retention-critical for long-life battery-backed systems where power budget and brown-out resilience are primary constraints.
Availability
R1LV0108ESN-7SR#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial data loggers, automated test equipment, point-of-sale terminals, and battery-backed control systems requiring stable component supply over extended production lifecycles.
Supply support for R1LV0108ESN-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was developed as an advanced low-power SRAM family targeting battery-operated and energy-sensitive embedded systems requiring simple, reliable, no-refresh memory with extended data retention.
FAQ
What is the maximum operating temperature range for R1LV0108ESN-7SR#B0?
The R1LV0108ESN-7SR#B0 is rated for operation from 0°C to +70°C (R-version). This commercial temperature grade is validated per Renesas R10DS0152EJ0100 Rev.1.00, page 2, and applies specifically to the -7SR#B0 variant with 525-mil SOP packaging. It is not qualified for extended industrial (-40°C to +85°C) operation.
Does R1LV0108ESN-7SR#B0 require a clock signal or periodic refresh?
No, the R1LV0108ESN-7SR#B0 is a true static RAM with no internal clock and zero refresh requirement. Its operation relies solely on address, data, and control signals (CS1#, CS2, WE#, OE#). This eliminates timing-critical refresh cycles and simplifies integration with microcontrollers lacking dedicated SRAM controllers.
What is the minimum supply voltage at which R1LV0108ESN-7SR#B0 retains stored data?
The R1LV0108ESN-7SR#B0 guarantees data retention down to 2.0 V, as specified in the Low Vcc Data Retention Characteristics table (page 12 of R10DS0152EJ0100 Rev.1.00). This mode activates when CS2 ≤ 0.2 V or CS1# ≥ Vcc − 0.2 V, enabling robust operation during brown-out conditions.
Can R1LV0108ESN-7SR#B0 be used with 5 V logic systems?
No, the R1LV0108ESN-7SR#B0 is strictly a 2.7–3.6 V device. Its absolute maximum Vcc is +4.6 V, and input high voltage (VIH) is defined as ≥2.0 V-not compatible with 5 V TTL logic levels. Interfacing with 5 V systems requires level translation on all address, control, and data lines.
How does the dual chip select (CS1# and CS2) function in R1LV0108ESN-7SR#B0?
In the R1LV0108ESN-7SR#B0, valid memory access requires CS1# = low AND CS2 = high. CS2 also controls the address buffer and enables data retention mode when pulled low; CS1# serves as the primary enable and can independently trigger retention when held high with CS2 high. This dual-control architecture supports flexible memory mapping and low-power state management.
R1LV0108ESN-7SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESN-7SR#B0 FAQ
1.How can I place an order for R1LV0108ESN-7SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESN-7SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESN-7SR#B0 reliable?
The price and inventory of R1LV0108ESN-7SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESN-7SR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESN-7SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESN-7SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESN-7SR#B0?
R1LV0108ESN-7SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESN-7SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESN-7SR#B0?
For technical support, including R1LV0108ESN-7SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESN-7SR#B0 requirements.
6.How does Aetrix verify that R1LV0108ESN-7SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESN-7SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESN-7SR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESN-7SR#B0?
All R1LV0108ESN-7SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESN-7SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESN-7SR#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESN-7SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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