Renesas R1LV0108ESN-7SR#S0

Overview

R1LV0108ESN-7SR#S0 from Renesas Electronics is a 1Mb low-power static RAM (131,072 × 8-bit) in 32-pin SOP packaging, operating from 2.7V to 3.6V with 70 ns access time and 0.6 µA typical standby current at 3.0V. It features TTL-compatible I/O, no refresh requirement, and dual chip select (CS1#, CS2) for seamless memory expansion-ideal for battery-backed instrumentation and portable industrial controllers.

For engineers reviewing the R1LV0108ESN-7SR#S0 datasheet, R1LV0108ESN-7SR#S0 pinout, R1LV0108ESN-7SR#S0 application, or R1LV0108ESN-7SR#S0 equivalent, key selection criteria include low-voltage data retention down to 2.0V, OR-tie capable three-state outputs, and guaranteed operation across 0°C to +70°C ambient temperature range in standard plastic SOP.

Technical Context

The R1LV0108ESN-7SR#S0 implements a fully static CMOS memory architecture with separate address and data paths, eliminating clock or refresh circuitry. Its dual chip select logic (CS1# active-low, CS2 active-high) enables hierarchical memory mapping without external decoding logic.

All control inputs (WE#, OE#, CS1#, CS2) and bidirectional DQ0–DQ7 lines are TTL-compatible, supporting direct interfacing with legacy microcontrollers and FPGAs. Standby current drops to 0.6 µA (typ.) at 3.0V when either CS2 is low or CS1# is high-enabling ultra-low-power retention during sleep modes.

Key Specifications

Pinout & Package

Package: 32-pin plastic SOP (525-mil), JEDEC MS-012AC compliant, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with IS61LV1024-70TQLI and AS6C1008-70SCN, the R1LV0108ESN-7SR#S0 delivers superior low-voltage data retention (down to 2.0 V) and lower standby current (0.6 µA vs. ≥1 µA), making it uniquely suited for battery-critical and brown-out-resilient designs despite identical 70 ns speed and SOP package.

Availability

R1LV0108ESN-7SR#S0 is available at Aetrix Electronics and suitable for industrial data loggers, medical handheld diagnostics, point-of-sale terminals, programmable logic controller I/O modules, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.

Supply support for R1LV0108ESN-7SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0108E Series was designed specifically for low-voltage, low-power parallel SRAM applications in portable and battery-operated systems-emphasizing data retention integrity and minimal standby consumption over high-speed performance.

FAQ

What is the minimum supply voltage required to retain data in R1LV0108ESN-7SR#S0?

The R1LV0108ESN-7SR#S0 guarantees data retention down to 2.0 V, as specified in the Low Vcc Data Retention Characteristics table. This allows continued memory hold during brown-out events or partial battery discharge-provided CS2 is held ≤0.2 V or CS1# is held ≥Vcc−0.2 V while other inputs remain in high-impedance state. The R1LV0108ESN-7SR#S0 maintains this specification across its full 0°C to +70°C operating range.

Does R1LV0108ESN-7SR#S0 require an external clock or refresh signal?

No, the R1LV0108ESN-7SR#S0 is a fully static RAM and requires no external clock or periodic refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet timing specifications. This eliminates timing-critical refresh overhead in firmware and simplifies integration with microcontrollers lacking dedicated SRAM controllers. The R1LV0108ESN-7SR#S0 operates purely on address, data, and control line transitions.

Can R1LV0108ESN-7SR#S0 be used with 5 V logic systems?

Yes-the R1LV0108ESN-7SR#S0 features TTL-compatible inputs and outputs, meaning it accepts VIH ≥ 2.0 V and VIL ≤ 0.6 V, and drives VOH ≥ 2.4 V (at −0.5 mA) and VOL ≤ 0.4 V (at 2 mA). This allows direct interfacing with 5 V TTL and 3.3 V LVTTL systems without level shifters, though Vcc must remain within 2.7–3.6 V. The R1LV0108ESN-7SR#S0's input structure tolerates −0.3 V to Vcc+0.3 V on any pin, supporting safe mixed-voltage board design.

What is the function of the NC pin on R1LV0108ESN-7SR#S0?

Pin 1 of the R1LV0108ESN-7SR#S0 is designated NC (No Connect) and is internally unconnected. Renesas documentation specifies that this pin must not be driven or pulled-leaving it floating is acceptable, but tying it to ground is recommended in high-noise environments to reduce coupling. It does not serve as a power, ground, or control terminal; misrouting this pin has no functional impact on the R1LV0108ESN-7SR#S0's memory operation or timing behavior.

How does the dual chip select (CS1# and CS2) improve memory expansion with R1LV0108ESN-7SR#S0?

The R1LV0108ESN-7SR#S0 uses CS1# (active-low) and CS2 (active-high) to enable hierarchical memory decoding: CS1# selects individual devices while CS2 enables entire memory banks. This allows up to four R1LV0108ESN-7SR#S0 devices to share one address/data bus using only two control lines-reducing FPGA or MCU GPIO usage versus single-CS alternatives. The R1LV0108ESN-7SR#S0's timing ensures glitch-free transitions between selected and deselected states, preventing bus contention during bank switching.