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Renesas R1LV0108ESP-5SI#B0
- Part No.:
- R1LV0108ESP-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESP-5SI#B0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,131
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Product details
Overview
R1LV0108ESP-5SI#B0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-power static RAM IC operating from a single 2.7–3.6V supply, featuring 55 ns access time, -40°C to +85°C industrial temperature range, and 32-pin SOP packaging. It delivers TTL-compatible I/O, no-refresh operation, and ultra-low standby current (1 µA typical at 3.0V), making it suitable for battery-backed memory in industrial control panels and portable instrumentation.
For engineers reviewing the R1LV0108ESP-5SI#B0 datasheet, R1LV0108ESP-5SI#B0 pinout, R1LV0108ESP-5SI#B0 application, or R1LV0108ESP-5SI#B0 equivalent, key selection criteria include industrial-grade temperature support, 55 ns read timing, dual chip select architecture for memory expansion, and compatibility with legacy 8-bit data bus systems requiring zero-refresh volatile storage.
Technical Context
The R1LV0108ESP-5SI#B0 implements a fully static CMOS memory array with independent address and data buffers, supporting asynchronous read/write cycles without clocks or refresh circuitry. Its dual chip select (CS1# and CS2) enables seamless bank expansion while maintaining common DQ0–DQ7 bidirectional data lines.
Operation relies on three active-low control signals: WE# for write strobing, OE# for output enable/disable, and CS1#/CS2 for hierarchical chip selection. Standby mode is entered when CS2 is low or both CS2 high and CS1# high, reducing current to ≤10 µA at +85°C - critical for long-term battery retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mb (131,072 words × 8 bits): supports full 8-bit parallel data transfers without byte masking logic. |
| Access Time | 55 ns max (tAA, tACS1, tACS2): ensures compatibility with 12–15 MHz microcontroller bus timing. |
| Supply Voltage | 2.7–3.6 V: matches Li-ion battery discharge profile and eliminates need for voltage regulation in portable designs. |
| Standby Current | ≤10 µA at +85°C: enables multi-year data retention on coin-cell backup power. |
| Operating Temperature | -40°C to +85°C: qualified for industrial environments including factory automation and outdoor telemetry units. |
| I/O Interface | TTL-compatible inputs/outputs: interfaces directly with legacy 5V-tolerant microcontrollers without level shifters. |
| Package | 525-mil 32-pin plastic SOP (PRSP0032DA-A): standard footprint compatible with automated SMT assembly and rework. |
Pinout & Package
Package: 525-mil 32-pin plastic SOP (PRSP0032DA-A), lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply input | Single 2.7–3.6V supply rail; decoupling capacitor required within 10 mm for stable operation. |
| Vss | Ground reference | Common return path for all internal logic and I/O; must be connected to system ground plane. |
| A0–A16 | Address inputs | 17-bit address bus supporting full 131,072-word addressing; A16 is MSB for 1Mb capacity. |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit common data bus; three-state outputs allow OR-tie capability for memory expansion. |
| CS1#, CS2 | Chip select inputs | Two-level chip select: CS2 enables address buffer; CS1# selects device when CS2 is high - enables multi-chip decoding. |
| WE# | Write enable | Active-low signal initiating write cycle; latches data on falling edge when CS1# low and CS2 high. |
| OE# | Output enable | Active-low control for DQ bus drivers; prevents contention during shared-bus operation. |
| NC | No connection | Pin 1 (SOP top view) is unconnected; must remain floating or tied to ground per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller and associated timing overhead - reduces BOM count and firmware complexity. |
| Low-voltage operation | 2.7–3.6V supply range aligns with depleted lithium battery voltages, enabling direct battery backup without regulators. |
| Ultra-low standby current | 1 µA typical at 3.0V/25°C enables >10-year data retention on CR2032 coin cells in cold-storage applications. |
| Three-state outputs with OR-tie | Allows multiple R1LV0108ESP-5SI#B0 devices to share a common data bus without external bus transceivers. |
| Dual chip select architecture | CS1# and CS2 provide hierarchical decoding for up to four devices in linear expansion without address demultiplexing. |
Applications
| Industrial PLC Data Buffer | Portable Medical Monitor Memory |
|---|---|
Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers deployed in factory environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Volatile working memory for cyclic data acquisition; operates continuously during runtime and retains settings during brief power interruptions. Use Value: 55 ns access time meets deterministic scan-cycle deadlines; -40°C to +85°C rating ensures reliability across unconditioned control cabinets. | Use Scenario: Holding patient waveform history and calibration constants in handheld ECG or SpO₂ monitors powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: Primary SRAM buffer interfacing directly with 8-bit microcontroller data bus; retains critical data during battery swaps. Use Value: 1 µA standby current extends backup runtime; TTL compatibility avoids level-shifter components, reducing board area and cost. |
| Smart Meter Firmware Cache | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Caching firmware update payloads and tariff tables in utility smart meters installed outdoors with exposure to solar heating and sub-zero winters. IC Role / Device Role / Timing Role: High-reliability non-refresh memory for secure code staging and parameter storage between metering cycles. Use Value: Industrial temperature grade (-40°C to +85°C) and 32-pin SOP package ensure long-term solder joint integrity under thermal cycling stress. | Use Scenario: Storing digital test vectors in benchtop ATE systems performing high-speed functional testing of ASICs and FPGAs. IC Role / Device Role / Timing Role: Fast-access pattern memory synchronized to test clock edges; accessed via parallel bus from pattern generator FPGA. Use Value: 55 ns tAA guarantees setup/hold timing margins for 12 MHz test clocks; three-state outputs simplify multiplexed vector loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416L-10TLI | 2Mb density (128k×16), 10 ns access, 3.3V only, 44-pin TSOP | Higher bandwidth but incompatible pinout and data width; requires PCB redesign and bus-width adaptation. | Select only if 16-bit interface and faster timing are mandatory and layout revision is feasible. |
| AS6C4008-55ZIN | 4Mb density (512k×8), 55 ns access, 2.7–3.6V, 32-pin SOP, -40°C to +85°C | Same package and voltage range, but larger capacity increases cost and may exceed memory map requirements. | Choose when future-proofing for larger firmware images is prioritized over minimal BOM cost. |
Compared with IS61LV102416L-10TLI and AS6C4008-55ZIN, the R1LV0108ESP-5SI#B0 offers optimal balance of industrial temperature compliance, 32-pin SOP footprint, and 1Mb capacity for cost-sensitive embedded systems where pin compatibility and power efficiency outweigh raw speed or density needs.
Availability
R1LV0108ESP-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitor memory, and smart meter firmware caching requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESP-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed as low-voltage, low-power SRAM for battery-operated and battery-backup applications where simplicity, reliability, and extended temperature operation are essential.
FAQ
What is the maximum operating frequency supported by the R1LV0108ESP-5SI#B0?
The R1LV0108ESP-5SI#B0 does not use a clock signal and operates asynchronously. Its 55 ns access time corresponds to a maximum effective bus frequency of approximately 12–15 MHz when interfaced with microcontrollers or FPGAs using standard read/write strobes. Timing is governed by tRC (55 ns read cycle time) and tWC (55 ns write cycle time), not a clock domain.
Does the R1LV0108ESP-5SI#B0 require an external refresh circuit?
No, the R1LV0108ESP-5SI#B0 is a true static RAM and requires no refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet specification timing - eliminating refresh overhead, associated logic, and potential data corruption from missed refresh cycles.
Can the R1LV0108ESP-5SI#B0 operate from a 2.5V supply?
No, the R1LV0108ESP-5SI#B0 has a specified minimum supply voltage of 2.7V. Operation below 2.7V violates the Absolute Maximum Ratings and may result in data loss, increased standby current, or failure to meet AC timing specifications. For 2.5V systems, consider alternative SRAM families explicitly rated down to 2.5V.
What is the function of the NC pin on the R1LV0108ESP-5SI#B0 SOP package?
Pin 1 of the R1LV0108ESP-5SI#B0's 32-pin SOP package is designated NC (No Connection). It is internally unconnected and must remain electrically floating. Renesas documentation confirms no internal bond wire or circuit node connects to this pin; grounding or driving it may cause unpredictable behavior or damage.
How does the R1LV0108ESP-5SI#B0 achieve data retention during power loss?
The R1LV0108ESP-5SI#B0 supports low-Vcc data retention down to 2.0V. When CS2 is held ≤0.2V or CS1# is held ≥Vcc−0.2V with CS2 ≥Vcc−0.2V, the device enters retention mode drawing ≤10 µA at +85°C. This allows backup from a supercapacitor or coin cell to preserve contents for years without full power.
R1LV0108ESP-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESP-5SI#B0 FAQ
1.How can I place an order for R1LV0108ESP-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESP-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESP-5SI#B0 reliable?
The price and inventory of R1LV0108ESP-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESP-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESP-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESP-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESP-5SI#B0?
R1LV0108ESP-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESP-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESP-5SI#B0?
For technical support, including R1LV0108ESP-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESP-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0108ESP-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESP-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESP-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESP-5SI#B0?
All R1LV0108ESP-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESP-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESP-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0108ESP-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESP-5SI#B0 Tags
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