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Renesas R1LV0108ESP-7SI#S0
- Part No.:
- R1LV0108ESP-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
R1LV0108ESP-7SI#S0.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:960
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Product details
Overview
R1LV0108ESP-7SI#S0 from Renesas Electronics is a 1Mb (131,072 × 8-bit) low-voltage static RAM IC operating from 2.7V to 3.6V, featuring 70 ns access time, -40°C to +85°C industrial temperature range, and 32-pin SOP packaging. It delivers TTL-compatible I/O, no-refresh operation, and ultra-low standby current of 1 µA (typ. at 3.0V), making it ideal for battery-backed memory in portable instrumentation and industrial control modules.
For engineers reviewing the R1LV0108ESP-7SI#S0 datasheet, R1LV0108ESP-7SI#S0 pinout, R1LV0108ESP-7SI#S0 application, or R1LV0108ESP-7SI#S0 equivalent, key selection criteria include its 70 ns read timing, dual chip select architecture (CS1#/CS2), common I/O bus with three-state outputs, and data retention down to 2.0V - all critical for reliable low-power embedded memory design.
Technical Context
This SRAM implements a fully static, asynchronous architecture with no internal clocks or refresh circuitry. Its memory array is organized as 128k words × 8 bits, decoded via dedicated row/column decoders and sense/write amplifiers, supporting true random access with address setup and hold times of 0 ns.
Operation relies on active-low CS1#, active-high CS2, WE#, and OE# controls - enabling flexible memory expansion and bus sharing. Data retention mode is triggered either by pulling CS2 ≤ 0.2V or asserting CS1# ≥ Vcc−0.2V while holding CS2 within valid logic bounds, drawing only 10 µA max at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mb (131,072 × 8-bit) - supports byte-wide data paths without external multiplexing |
| Access Time | 70 ns - guarantees deterministic read latency for real-time control loops |
| Supply Voltage | 2.7–3.6 V - compatible with 3.3V systems and brown-out tolerant down to 2.0V for data retention |
| Standby Current | 10 µA max at +85°C - enables multi-year battery backup in always-on monitoring devices |
| Operating Temperature | -40°C to +85°C - qualified for industrial-grade deployment without derating |
| I/O Interface | TTL-compatible inputs/outputs - interoperable with legacy microcontrollers and FPGAs without level shifters |
| Package | 32-pin SOP (525-mil, PRSP0032DA-A) - standard footprint for through-hole or surface-mount assembly |
Pinout & Package
Package: 32-pin plastic SOP (525-mil width), JEDEC-standard PRSP0032DA-A footprint, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 128k-word decoding; A16 is MSB |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state output control via OE# and chip selects |
| CS1#, CS2 | Chip select | Two independent enables: CS1# active-low, CS2 active-high - enables bank selection and OR-tie expansion |
| WE#, OE# | Control inputs | WE# initiates write cycles; OE# gates output drivers to prevent bus contention during reads |
| Vcc, Vss | Power/Ground | Single 2.7–3.6V supply; no separate I/O or core voltage rails required |
| NC | No connection | Pin 1 (SOP top-left) is unconnected - must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing constraints - simplifies firmware and reduces CPU load |
| Common data I/O bus | Reduces PCB trace count and connector pin count versus separate DQ-in/DQ-out architectures |
| OR-tie capability | Multiple R1LV0108ESP-7SI#S0 devices can share a single data bus using open-drain-style wired-OR with pull-up resistors |
| Low-voltage data retention | Maintains stored data at Vcc ≥ 2.0V - extends usable battery life in backup power scenarios |
| TTL-compatible signaling | Direct interface with 3.3V and 5V logic families without translation - lowers BOM cost and design complexity |
Applications
| Portable Medical Monitors | Industrial PLC Data Loggers |
|---|---|
Use Scenario: Continuous ECG waveform buffering in handheld patient monitors with coin-cell backup. IC Role / Device Role / Timing Role: Primary non-volatile data buffer storing real-time sensor samples during main power loss. Use Value: 10 µA max standby current at +85°C enables >5-year battery shelf life; 70 ns access supports 14 kHz sampling without DMA stalls. | Use Scenario: Cyclic logging of sensor readings and alarm events in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Local high-speed scratchpad memory for timestamped event records prior to SD card write. Use Value: Dual chip select (CS1#/CS2) allows seamless expansion to 2MB using identical parts; no refresh eliminates jitter in deterministic scan cycles. |
| Automotive Infotainment Head Units | Smart Energy Meters |
Use Scenario: Storing UI state and recent navigation history during ignition-off periods. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving volatile configuration across cold starts. Use Value: Data retention down to 2.0V ensures integrity during vehicle battery sag; -40°C to +85°C rating covers under-hood thermal extremes. | Use Scenario: Tamper-resistant metering data cache retaining kWh totals during AC power interruption. IC Role / Device Role / Timing Role: Secure, low-leakage memory holding billing-critical values until mains power resumes. Use Value: 1 µA typical standby current at 3.0V minimizes primary battery drain; TTL compatibility avoids level-shifter components in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128ELL-70ZSXIT | 70 ns access, 32-pin TSOP-II, 2.7–5.5V supply - wider voltage range but higher standby current (25 µA typ.) | Preferred where board space favors TSOP over SOP; less suitable for ultra-low-power battery backup | Select when existing layout uses TSOP-II footprint or system requires 5V tolerance |
| IS61LV25616AL-70TQLI | 256K × 16-bit organization, 70 ns, 44-pin TSOP - double density and wider bus, but incompatible pinout and package | Used in higher-bandwidth applications needing 16-bit parallel access; not drop-in replaceable | Choose only for new designs requiring 16-bit data path or >1Mb capacity |
Compared with CY62128ELL-70ZSXIT and IS61LV25616AL-70TQLI, the R1LV0108ESP-7SI#S0 offers the lowest standby current and SOP package compatibility, making it optimal for space-constrained, battery-sensitive industrial and portable systems where byte-wide access suffices.
Availability
R1LV0108ESP-7SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, automotive infotainment head units, and smart energy meters requiring stable component supply across extended product lifecycles.
Supply support for R1LV0108ESP-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0108E Series was designed specifically for low-power, battery-operated memory applications demanding simplicity, reliability, and long-term data retention - targeting portable instrumentation, industrial control, and automotive subsystems.
FAQ
What is the maximum operating frequency supported by the R1LV0108ESP-7SI#S0?
The R1LV0108ESP-7SI#S0 is an asynchronous SRAM with no clock input, so it does not have an operating frequency specification. Instead, its speed is defined by access time: 70 ns maximum address-to-data valid delay under industrial temperature and 2.7–3.6V conditions. This corresponds to a theoretical maximum sustained read/write cycle rate of ~14.3 MHz in ideal conditions, though actual throughput depends on system-level timing margins and bus protocol overhead. The R1LV0108ESP-7SI#S0 datasheet confirms tRC = 70 ns for the -7S variant.
Does the R1LV0108ESP-7SI#S0 require external refresh circuitry?
No, the R1LV0108ESP-7SI#S0 is a true static RAM and requires no external refresh circuitry or periodic access to retain data. Its CMOS latch-based memory cells maintain state indefinitely as long as power is applied and control signals meet timing specifications. This eliminates refresh-related firmware complexity, timing uncertainty, and power spikes - a key advantage over DRAM. The R1LV0108ESP-7SI#S0 datasheet explicitly states "No clocks, No refresh" in its features list.
Can the R1LV0108ESP-7SI#S0 be used in a 5V system?
No, the R1LV0108ESP-7SI#S0 is rated for 2.7V to 3.6V supply only and is not 5V-tolerant. Applying 5V to Vcc exceeds the absolute maximum rating of +4.6V and will cause permanent damage. Input voltages must also stay within VIH ≤ Vcc+0.3V and VIL ≥ –0.3V. For 5V systems, level translation or a different SRAM family (e.g., Cypress CY62128EL) is required. The R1LV0108ESP-7SI#S0 datasheet specifies Vcc = 2.7–3.6V in DC Operating Conditions (page 7).
What is the purpose of the NC pin on the R1LV0108ESP-7SI#S0?
The NC (No Connection) pin on the R1LV0108ESP-7SI#S0 is Pin 1 in the 32-pin SOP package and serves no internal function. It must remain electrically unconnected - neither tied to Vcc, Vss, nor any signal. Improper connection may compromise device reliability or violate internal isolation. The R1LV0108ESP-7SI#S0 pin arrangement diagram (page 3) and pin description table (page 4) both identify Pin 1 as NC, and the datasheet cautions against applying signals to NC pins.
How does data retention work on the R1LV0108ESP-7SI#S0 during low-voltage conditions?
The R1LV0108ESP-7SI#S0 retains data at Vcc as low as 2.0V using two selectable modes: (1) pull CS2 ≤ 0.2V, or (2) assert CS1# ≥ Vcc−0.2V while keeping CS2 within valid logic bounds. In either mode, standby current drops to ≤10 µA at +85°C, preserving memory contents without external backup capacitors. The R1LV0108ESP-7SI#S0 datasheet defines VDR = 2.0V min and ICCDR = 10 µA max in the Low Vcc Data Retention Characteristics table (page 14).
R1LV0108ESP-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1LV0108ESP-7SI#S0 FAQ
1.How can I place an order for R1LV0108ESP-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0108ESP-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0108ESP-7SI#S0 reliable?
The price and inventory of R1LV0108ESP-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0108ESP-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0108ESP-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0108ESP-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0108ESP-7SI#S0?
R1LV0108ESP-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0108ESP-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0108ESP-7SI#S0?
For technical support, including R1LV0108ESP-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0108ESP-7SI#S0 requirements.
6.How does Aetrix verify that R1LV0108ESP-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0108ESP-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0108ESP-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0108ESP-7SI#S0?
All R1LV0108ESP-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0108ESP-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0108ESP-7SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0108ESP-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0108ESP-7SI#S0 Tags
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