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Renesas R1LV0208BSA-5SI#B0
- Part No.:
- R1LV0208BSA-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV0208BSA-5SI#B0.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,784
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Product details
Overview
R1LV0208BSA-5SI#B0 from Renesas Electronics is a 2Mb low-power static RAM organized as 262,144 × 8-bit, operating from a single 2.7–3.6V supply, with 55 ns access time and -40°C to +85°C industrial temperature range, packaged in 32-pin sTSOP. It serves as non-volatile data buffer or working memory in battery-backed systems requiring zero refresh, TTL-compatible interfacing, and ultra-low standby current.
For engineers reviewing the R1LV0208BSA-5SI#B0 datasheet, R1LV0208BSA-5SI#B0 pinout, R1LV0208BSA-5SI#B0 application, or R1LV0208BSA-5SI#B0 equivalent, key selection criteria include its 1 µA typical standby current at 3.0V, dual chip select architecture (CS1#, CS2) for seamless memory expansion, three-state I/O with OR-tie capability, and guaranteed data retention down to 2.0V Vcc.
Technical Context
The R1LV0208BSA-5SI#B0 implements a fully static CMOS memory array with no internal clocks or refresh circuitry, relying on external address latching and control timing. Its dual chip select (CS1#, CS2) enables hierarchical memory mapping-CS1# selects the device while CS2 gates internal buffers, allowing flexible bank enable/disable without bus contention.
Read and write operations are controlled by independent OE# and WE# signals with defined setup/hold and transition-to-output timing windows. The device supports common I/O with three-state outputs, enabling direct connection to shared data buses without external transceivers, and features TTL-compatible voltage thresholds across its full 2.7–3.6V supply range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 262,144 × 8-bit (2 Mb); provides byte-wide data path suitable for 8-bit microcontrollers and legacy peripherals. |
| Access time | 55 ns max; ensures compatibility with 18 MHz bus timing in industrial embedded controllers. |
| Supply voltage | 2.7–3.6 V; supports single-supply operation in battery-powered or mixed-voltage systems without level shifters. |
| Standby current | 10 µA max at +85°C; enables multi-year data retention in coin-cell–backed applications. |
| Data retention VCC | 2.0 V min; guarantees SRAM contents survive brown-out events down to 2.0V without external backup. |
| Operating temperature | -40°C to +85°C; qualified for industrial-grade deployment in automotive infotainment head units and factory automation PLCs. |
| I/O interface | TTL-compatible inputs/outputs; eliminates need for voltage translation when interfacing with legacy 5V-tolerant logic or 3.3V microcontrollers. |
Pinout & Package
Package: 32-pin plastic sTSOP (8 mm × 13.4 mm, normal-bend type, PTSA0032KB-A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling capacitor required within 10 mm for stable read/write margins. |
| Vss | Ground | Digital ground reference; must be connected to system ground plane with low-inductance path. |
| A0–A17 | Address input | 18-bit address bus supporting full 256k-word decoding; A11–A17 used for row selection, A0–A10 for column. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state output control; high-impedance when OE# = VIH or CS1# = VIH/CS2 = VIL. |
| CS1# | Chip select 1 | Active-low primary enable; device selected only when CS1# = VIL AND CS2 = VIH; controls memory array activation. |
| CS2 | Chip select 2 | Active-high secondary enable; gates address, WE#, OE#, and DQ buffers; enables data retention mode when ≤ 0.2V. |
| WE# | Write enable | Active-low write strobe; initiates write cycle when CS1# = VIL, CS2 = VIH, and WE# transitions low. |
| OE# | Output enable | Active-low output control; prevents bus contention by forcing DQ pins to high-impedance when deasserted. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing-critical software routines; reduces MCU firmware complexity. |
| Dual chip select (CS1#, CS2) | Enables hierarchical memory banking and selective power gating-CS2 = VIL places device in ultra-low-current data retention mode. |
| Common I/O with three-state outputs | Supports direct connection to multiplexed data buses; OR-tie capability allows parallel connection of multiple devices without external logic. |
| 1 µA typical standby current at 3.0V | Extends battery life in always-on monitoring nodes; measured at +25°C with CS1# = VIH or CS2 = VIL. |
| 2.0V minimum data retention voltage | Preserves memory contents during deep brown-out; validated under bias at -40°C to +85°C with CS1# or CS2 controlling retention mode. |
Applications
| Industrial PLC Data Buffer | Automotive Infotainment Cache |
|---|---|
|
Use Scenario: Real-time logging of sensor inputs and control state in programmable logic controllers deployed in factory environments. IC Role / Device Role / Timing Role: Byte-accessible SRAM providing fast, deterministic read/write latency for cyclic data acquisition without CPU intervention. Use Value: 55 ns access time ensures sub-microsecond response to fieldbus interrupts; -40°C to +85°C rating guarantees reliability in unconditioned control cabinets. |
Use Scenario: Temporary storage of decoded audio frames and UI assets in automotive head units during boot and navigation rendering. IC Role / Device Role / Timing Role: Low-power working memory holding transient media buffers between DSP and display subsystems. Use Value: 10 µA max standby current at +85°C minimizes thermal load in sealed enclosures; TTL compatibility avoids level-shifter components. |
| Medical Diagnostic Instrument RAM | Smart Meter Firmware Scratchpad |
|
Use Scenario: Storing calibration coefficients and real-time waveform samples in portable ECG monitors powered by lithium primary cells. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining critical patient data during power cycling or low-battery shutdown. Use Value: 2.0V data retention threshold ensures integrity through 3.0V → 2.2V battery sag; 32-pin sTSOP footprint fits space-constrained handheld PCBs. |
Use Scenario: Holding firmware update staging data and tamper-log entries in ANSI C12.22-compliant electricity meters with 10+ year service life. IC Role / Device Role / Timing Role: Non-refreshing memory for secure, deterministic write operations during meter firmware upgrades. Use Value: Dual CS architecture isolates memory during partial rewrites; 1 µA typical standby current extends 10-year battery life beyond IEC 62056 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit organization, 10 ns access, 3.3V only, 44-pin TSOP-II | Higher density and speed but wider data bus and incompatible pinout; requires PCB redesign | Select only if 16-bit data path and faster timing are mandatory and layout revision is feasible. |
| AS6C4008-55ZIN | 512K × 8-bit, 55 ns access, 2.7–3.6V, 32-pin sTSOP, 2 µA standby at +85°C | Near-identical package and timing, but higher density and slightly higher standby current | Drop-in replacement for capacity upgrade paths where 4 Mb is needed and 2 µA standby is acceptable. |
Compared with IS61LV25616AL-10TLI, the R1LV0208BSA-5SI#B0 offers lower power and pin-compatible 8-bit interfacing; compared with AS6C4008-55ZIN, it delivers tighter standby current spec (10 µA vs. 2 µA max) at identical speed and footprint-critical for long-life battery systems.
Availability
R1LV0208BSA-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive infotainment caching, medical diagnostic instrument RAM, smart meter firmware scratchpad, and battery-backed real-time logging requiring stable component supply over extended production lifecycles.
Supply support for R1LV0208BSA-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The R1LV0208BSA-5SI#B0 belongs to Renesas' Advanced LPSRAM product line, designed specifically for ultra-low-power, battery-operated, and battery-backup memory applications where zero refresh, wide supply tolerance, and industrial temperature resilience are mandatory.
FAQ
What is the maximum access time specification for R1LV0208BSA-5SI#B0?
The R1LV0208BSA-5SI#B0 has a maximum access time of 55 ns, measured from address valid to valid data output under standard test conditions (Vcc = 2.7–3.6 V, Ta = –40°C to +85°C). This value is guaranteed across the full industrial temperature range and applies to both read and write cycle timing parameters including tAA, tACS1, and tACS2.
Does R1LV0208BSA-5SI#B0 require a refresh clock or periodic memory maintenance?
No, the R1LV0208BSA-5SI#B0 is a true static RAM and requires no refresh clock or periodic memory maintenance. Its fully static CMOS design retains data indefinitely as long as power is applied and control signals meet timing specifications-eliminating refresh overhead in microcontroller firmware and simplifying system design.
What is the minimum supply voltage at which R1LV0208BSA-5SI#B0 retains stored data?
The R1LV0208BSA-5SI#B0 guarantees data retention down to 2.0 V Vcc, verified under bias at temperatures from –40°C to +85°C. Data retention mode is activated either by pulling CS2 ≤ 0.2 V or by driving CS1# ≥ Vcc – 0.2 V while maintaining CS2 ≥ Vcc – 0.2 V or ≤ 0.2 V, per the low-Vcc retention waveform specifications.
Can R1LV0208BSA-5SI#B0 be used in a 5V system environment?
The R1LV0208BSA-5SI#B0 is not 5V-tolerant: its absolute maximum Vcc is +4.6 V, and input high voltage (VIH) is specified as 2.0 V minimum up to Vcc + 0.3 V. Direct connection to 5V logic violates VIH/VIL thresholds and risks damage. Interface requires level translation or use with 3.3V-compatible controllers only.
What packaging format is used for R1LV0208BSA-5SI#B0, and what is its footprint?
The R1LV0208BSA-5SI#B0 is supplied in a 32-pin plastic sTSOP (thin shrink small outline package) with dimensions 8 mm × 13.4 mm and normal-bend leads (package code PTSA0032KB-A). Its lead pitch is 0.5 mm, and it uses JEDEC-standard sTSOP pinout compatible with automated SMT placement and reflow processes.
R1LV0208BSA-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0208BSA-5SI#B0 FAQ
1.How can I place an order for R1LV0208BSA-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0208BSA-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0208BSA-5SI#B0 reliable?
The price and inventory of R1LV0208BSA-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0208BSA-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0208BSA-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0208BSA-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0208BSA-5SI#B0?
R1LV0208BSA-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0208BSA-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0208BSA-5SI#B0?
For technical support, including R1LV0208BSA-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0208BSA-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0208BSA-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0208BSA-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0208BSA-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0208BSA-5SI#B0?
All R1LV0208BSA-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0208BSA-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0208BSA-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0208BSA-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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