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Renesas R1LV0208BSA-5SI#B1
- Part No.:
- R1LV0208BSA-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV0208BSA-5SI#B1.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:872
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Product details
Overview
R1LV0208BSA-5SI#B1 from Renesas Electronics is a 2Mb advanced low-power static RAM (256k × 8-bit) fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7V–3.6V supply with 55 ns access time, 1 µA typical standby current at 3.0V, and TTL-compatible I/O - designed for battery-backed memory systems in portable instrumentation and industrial control.
For engineers reviewing the R1LV0208BSA-5SI#B1 datasheet, R1LV0208BSA-5SI#B1 pinout, R1LV0208BSA-5SI#B1 application, or R1LV0208BSA-5SI#B1 equivalent, key selection criteria include sTSOP-32 package compatibility, dual chip select architecture (CS1#/CS2), no-refresh operation, and low-voltage data retention down to 2.0V.
Technical Context
The R1LV0208BSA-5SI#B1 implements a fully static memory array with asynchronous parallel interface, using separate address latching and column/row decoding without internal clocks or refresh circuitry. Its dual chip select (CS1# active-low, CS2 active-high) enables flexible memory expansion and bank selection in multi-chip configurations.
It supports three-state bidirectional DQ0–DQ7 I/O with OE#-controlled output enable and WE#-controlled write strobe, and features OR-tie capability via high-impedance outputs during standby or disable states. Data retention is maintained at Vcc ≥ 2.0V when either CS1# or CS2 is asserted into retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 262,144 words × 8 bits = 2 Mbit; supports byte-wide data bus interfacing without external width conversion. |
| Access time | 55 ns max; ensures compatibility with 18 MHz bus timing in microcontroller and FPGA-based systems. |
| Supply voltage | 2.7V–3.6V single supply; eliminates need for dual-rail regulators in battery-powered designs. |
| Standby current | 1 µA typical at 3.0V/25°C; enables multi-year battery life in always-on backup memory applications. |
| Data retention VCC | 2.0V min; allows reliable SRAM hold during brown-out or battery depletion down to critical threshold. |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade embedded systems without derating. |
| I/O compatibility | TTL-level inputs and outputs; interfaces directly with legacy MCU, CPLD, and ASIC families without level-shifting. |
Pinout & Package
Package: 32-pin plastic sTSOP (8 mm × 13.4 mm), JEDEC standard thin shrink small outline package with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling capacitor required within 5 mm for noise immunity. |
| Vss (GND) | Ground reference | Signal and power ground return; must be connected to low-impedance PCB plane. |
| A0–A17 | Address inputs | 18-bit address bus supporting full 256k-word addressing; A11–A17 used for row decode, A0–A10 for column. |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit common data bus; high-impedance state enabled by OE# high or chip deselection. |
| CS1# | Chip select 1 | Active-low primary enable; must be low with CS2 high for read/write; controls retention when held ≥ Vcc−0.2V. |
| CS2 | Chip select 2 | Active-high secondary enable; used for bank selection and data retention trigger (0V ≤ CS2 ≤ 0.2V). |
| WE# | Write enable | Active-low write strobe; initiates write on falling edge concurrent with valid address and CS1#/CS2. |
| OE# | Output enable | Active-low output driver control; prevents bus contention when high or during chip deselect. |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates timing controller overhead and guarantees deterministic access latency in real-time systems. |
| Dual chip select (CS1#/CS2) | Enables seamless memory expansion across multiple R1LV0208BSA devices without external logic. |
| OR-tie capable outputs | Allows direct wire-OR connection of multiple DQ buses for shared-memory or fault-tolerant architectures. |
| Low-voltage data retention | Maintains stored data at Vcc as low as 2.0V, supporting extended backup during main power loss. |
| TTL-compatible I/O | Direct interface with 3.3V and 5V logic families without level translators or pull-up resistors. |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
Use Scenario: Continuous ECG waveform buffering with battery backup during AC power interruption. IC Role / Device Role / Timing Role: Nonvolatile data buffer holding up to 256k samples of 8-bit sensor data with zero refresh overhead. Use Value: 1 µA standby current extends CR2032 battery life beyond 3 years; 2.0V retention threshold ensures data integrity during brown-out. | Use Scenario: Real-time logging of machine status and sensor readings in factory automation controllers. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data capture synchronized to PLC scan cycle. Use Value: 55 ns access time meets sub-100 ns bus timing requirements of ARM Cortex-M7-based controllers; –40°C to +85°C rating ensures field stability. |
| Smart Meter Firmware Cache | Avionics Power-Up Configuration Store |
Use Scenario: Storing decrypted firmware segments during secure boot sequence in utility smart meters. IC Role / Device Role / Timing Role: Fast-access temporary storage for code blocks loaded from flash before execution. Use Value: TTL-compatible I/O simplifies interface to metering SoC; no-refresh operation avoids timing jitter in cryptographic routines. | Use Scenario: Holding aircraft subsystem configuration parameters during cold-start initialization. IC Role / Device Role / Timing Role: Critical configuration register bank accessed immediately after power-on reset. Use Value: sTSOP-32 footprint fits constrained avionics PCB space; guaranteed operation at –40°C enables arctic deployment readiness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256k × 16), 10 ns access, 3.3V only, SOJ-44 package | Higher bandwidth but wider bus and larger footprint; requires PCB redesign and data path adaptation. | Select if system demands >256k × 8 throughput and can accommodate 44-pin SOJ layout. |
| AS6C4008-55ZIN | 2.7–5.5V supply range, 55 ns access, 32-pin SOP (not sTSOP), 2 µA standby current | Broader voltage tolerance but higher leakage; SOP thermal and mechanical profile differs from sTSOP. | Prefer for mixed-voltage legacy systems where 5V tolerance is required and board space allows SOP height. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV0208BSA-5SI#B1 offers optimal balance of ultra-low standby current (1 µA), industry-standard sTSOP-32 footprint, and guaranteed 2.0V data retention - making it uniquely suited for space-constrained, battery-critical industrial and medical applications.
Availability
R1LV0208BSA-5SI#B1 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and smart meter firmware caches requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for R1LV0208BSA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV0208BSA series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for low-voltage, low-power, and battery-backed memory applications where reliability, simplicity, and long-term data retention are critical.
FAQ
What is the minimum supply voltage required to retain data in R1LV0208BSA-5SI#B1?
The R1LV0208BSA-5SI#B1 maintains stored data at Vcc as low as 2.0V when placed in data retention mode via CS1# ≥ Vcc−0.2V or CS2 ≤ 0.2V. This specification is verified across the full −40°C to +85°C temperature range and enables robust operation during brown-out conditions. The R1LV0208BSA-5SI#B1 does not require external capacitors or auxiliary circuitry to sustain retention at this voltage threshold.
Does R1LV0208BSA-5SI#B1 require a clock signal or periodic refresh cycles?
No, the R1LV0208BSA-5SI#B1 is a fully static RAM and operates asynchronously with no internal clock or refresh circuitry. All operations - read, write, and standby - are controlled solely by address, CS1#, CS2, WE#, and OE# signals. This eliminates timing jitter, reduces system complexity, and ensures deterministic latency, which is essential for real-time embedded applications using the R1LV0208BSA-5SI#B1.
What package type and dimensions does R1LV0208BSA-5SI#B1 use?
The R1LV0208BSA-5SI#B1 is housed in a 32-pin plastic sTSOP (thin shrink small outline package) measuring 8.0 mm × 13.4 mm with 0.5 mm lead pitch. It complies with JEDEC MO-153 standards and is compatible with standard reflow soldering profiles. The R1LV0208BSA-5SI#B1's sTSOP footprint provides superior thermal performance and board density compared to legacy SOJ or ZIP packages.
Can R1LV0208BSA-5SI#B1 be used in a 5V system environment?
The R1LV0208BSA-5SI#B1 is specified for 2.7V–3.6V operation only and is not rated for 5V supply or I/O tolerance. Applying 5V to Vcc or any input pin exceeds absolute maximum ratings and may cause permanent damage. For 5V systems, level translation or selection of a 5V-tolerant SRAM such as AS6C4008-55ZIN is required - the R1LV0208BSA-5SI#B1 must be used exclusively within its defined 3.3V domain.
How does the dual chip select (CS1# and CS2) function in R1LV0208BSA-5SI#B1?
In the R1LV0208BSA-5SI#B1, CS1# (active-low) and CS2 (active-high) operate together to enable memory access: both must be asserted (CS1# = L, CS2 = H) for read/write. CS2 also controls data retention mode when driven to 0V–0.2V, while CS1# enables retention when held ≥ Vcc−0.2V. This dual-select architecture allows flexible bank selection and low-power state management without external logic - a core feature of the R1LV0208BSA-5SI#B1 design.
R1LV0208BSA-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0208BSA-5SI#B1 FAQ
1.How can I place an order for R1LV0208BSA-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0208BSA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0208BSA-5SI#B1 reliable?
The price and inventory of R1LV0208BSA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0208BSA-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV0208BSA-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0208BSA-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0208BSA-5SI#B1?
R1LV0208BSA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0208BSA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0208BSA-5SI#B1?
For technical support, including R1LV0208BSA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0208BSA-5SI#B1 requirements.
6.How does Aetrix verify that R1LV0208BSA-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV0208BSA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0208BSA-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV0208BSA-5SI#B1?
All R1LV0208BSA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0208BSA-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0208BSA-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV0208BSA-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0208BSA-5SI#B1 Tags
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