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Renesas R1LV0208BSA-5SI#S0
- Part No.:
- R1LV0208BSA-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV0208BSA-5SI#S0.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:2,948
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Product details
Overview
R1LV0208BSA-5SI#S0 from Renesas Electronics is a 2Mb advanced low-power static RAM (256k × 8-bit), fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7V–3.6V supply with 55 ns access time, 1 µA typical standby current at 3.0V, and TTL-compatible I/O - designed for battery-backed memory systems in portable instrumentation and industrial control.
For engineers reviewing the R1LV0208BSA-5SI#S0 datasheet, R1LV0208BSA-5SI#S0 pinout, R1LV0208BSA-5SI#S0 application, or R1LV0208BSA-5SI#S0 equivalent, key selection criteria include low-voltage data retention down to 2.0V, dual chip select architecture (CS1#/CS2) for seamless memory expansion, and sTSOP-32 packaging compatible with space-constrained PCB layouts.
Technical Context
The R1LV0208BSA-5SI#S0 implements a fully asynchronous SRAM architecture with no clocks or refresh required, relying on static latch-based memory cells and dual-level chip select decoding (CS1# active-low, CS2 active-high) to enable hierarchical memory mapping. Its address buffer, column/row decoders, and sense/write amplifiers are optimized for low-voltage operation across –40°C to +85°C.
It supports three-state bidirectional DQ0–DQ7 I/O with OR-tie capability and uses OE# to prevent bus contention during read cycles. Standby entry is triggered by either CS1# high or CS2 low, enabling flexible power management in multi-chip configurations without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 262,144 × 8-bit (2 Mb); supports byte-wide data transfers without external demultiplexing |
| Supply voltage | 2.7V–3.6V; enables direct interface with 3.3V logic and compatibility with Li-ion battery discharge profiles |
| Access time | 55 ns max; guarantees timing margin for 18 MHz burst-free CPU interfaces in embedded controllers |
| Standby current | 1 µA typical at 3.0V/25°C; reduces battery drain in always-on backup mode for real-time clock subsystems |
| Data retention VCC | 2.0V min; maintains stored data during brown-out or battery swap without external capacitor hold-up |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade deployment in motor drives and remote sensors |
| Package | 32-pin sTSOP (8 mm × 13.4 mm); surface-mount compatible with automated assembly and thermal relief pads |
Pinout & Package
Package: 32-pin plastic sTSOP (8 mm × 13.4 mm), JEDEC MO-153 compliant, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply input | Primary 2.7–3.6V supply rail; requires local 100 nF ceramic decoupling adjacent to pin |
| Vss (GND) | Ground reference | Digital ground return for all I/O and core logic; must be connected to low-impedance PCB plane |
| A0–A17 | Address inputs | 18-bit address bus supporting full 256k-word addressing; A11–A17 used for row decode, A0–A10 for column |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit common data bus with three-state output drivers; supports OR-tie for shared-bus memory expansion |
| CS1# | Chip select 1 (active low) | Primary enable signal; device enters standby when high, regardless of CS2 state |
| CS2 | Chip select 2 (active high) | Secondary enable; combined with CS1# to define active window; controls data retention mode when low |
| WE# | Write enable (active low) | Initiates write cycle when CS1# low and CS2 high; latches DQ data on falling edge |
| OE# | Output enable (active low) | Controls DQ bus direction; prevents contention during read cycles when multiple devices share data lines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing-critical controller firmware for battery-backed storage |
| Dual chip select (CS1#/CS2) | Enables hierarchical memory banking - e.g., CS2 selects bank, CS1# selects device within bank - reducing address decoder complexity |
| TTL-compatible I/O | Direct interface with legacy 3.3V microcontrollers and FPGAs without level-shifting circuitry |
| Low-voltage data retention | Maintains valid data at VCC = 2.0V, supporting >10-year backup with coin-cell batteries in metering applications |
| OR-tie capable outputs | Allows parallel connection of multiple R1LV0208BSA-5SI#S0 devices on same DQ bus without external diodes or resistors |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
|
Use Scenario: Stores real-time ECG waveform buffers and calibration coefficients during battery-powered operation with periodic flash offload. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical runtime data between power cycles; retains content during 2.0–3.6V brown-out events. Use Value: Eliminates need for external EEPROM write-cycle delay and wear leveling, reducing BOM count and firmware complexity. |
Use Scenario: Captures sensor readings and alarm history in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data acquisition; operates continuously across –40°C to +85°C ambient range. Use Value: 55 ns access time supports deterministic scan-cycle execution under RTOS scheduling without memory wait states. |
| Smart Energy Meter | Automotive Diagnostic Tool |
|
Use Scenario: Holds tamper logs, tariff tables, and cryptographic keys in ANSI C12.19-compliant utility meters with lithium backup. IC Role / Device Role / Timing Role: Secure, low-leakage memory block isolated during main power loss; CS2-controlled retention mode minimizes leakage to ≤10 µA at 85°C. Use Value: Meets IEC 62056-21 long-term data integrity requirements without supercapacitor support. |
Use Scenario: Buffers OBD-II protocol responses and vehicle configuration data in handheld diagnostic scanners powered by USB or internal Li-Po. IC Role / Device Role / Timing Role: Fast-access working memory for protocol stack processing; TTL I/O ensures compatibility with legacy CAN transceivers and UART peripherals. Use Value: 1 µA standby current extends scanner runtime beyond 12 hours on single charge, meeting SAE J2534 duty-cycle targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV25616AL-10TLI | 256K × 16-bit (512 Kb), 10 ns access, 3.3V only, 44-pin TSOP-II | Wider data bus but larger footprint; higher speed unsuitable for cost-sensitive metering where 55 ns suffices | Select when 16-bit bus alignment or sub-10 ns latency is required; not drop-in due to pin count and width mismatch |
| Cypress CY62128EV30LL-45ZSXIT | 128K × 8-bit (1 Mb), 45 ns access, 2.2–3.6V, 32-pin SOIC | Lower density and slower retention voltage (2.2V min); through-hole package incompatible with high-density SMT layouts | Consider for legacy board redesigns requiring SOIC; insufficient capacity for 256k-word firmware overlays in new designs |
Compared with IS61LV25616AL-10TLI and CY62128EV30LL-45ZSXIT, the R1LV0208BSA-5SI#S0 delivers optimal balance of 2 Mb density, 55 ns timing, 2.0V data retention, and sTSOP-32 footprint - making it the preferred choice for next-generation portable and industrial SRAM applications where space, battery life, and reliability are co-constrained.
Availability
R1LV0208BSA-5SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and smart energy meters requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.
Supply support for R1LV0208BSA-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV0208BSA-5SI#S0 belongs to Renesas's Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications demanding high reliability and extended data retention without refresh circuitry.
FAQ
What is the minimum supply voltage for data retention in R1LV0208BSA-5SI#S0?
The R1LV0208BSA-5SI#S0 maintains stored data at VCC as low as 2.0V, verified per the Low Vcc Data Retention Characteristics table (Page 11). This applies under two conditions: either CS2 ≤ 0.2V or CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V. At 25°C, data retention current is typically 1 µA, rising to 10 µA at 85°C.
Does R1LV0208BSA-5SI#S0 require an external clock or refresh signal?
No, the R1LV0208BSA-5SI#S0 is a fully asynchronous static RAM and requires no clock, refresh, or periodic access to retain data. Its internal latch-based memory cells maintain state indefinitely as long as VCC remains within specification and appropriate chip select conditions are met - a key advantage over DRAM or pseudo-SRAM in battery-critical systems.
Can multiple R1LV0208BSA-5SI#S0 devices share the same DQ bus?
Yes, the R1LV0208BSA-5SI#S0 features three-state outputs with OR-tie capability, allowing multiple units to drive a common DQ0–DQ7 bus without external diodes or resistors. Proper sequencing of CS1#, CS2, and OE# ensures only one device drives the bus at any time, preventing contention during read operations.
What is the meaning of "sTSOP" in the R1LV0208BSA-5SI#S0 package designation?
sTSOP stands for thin shrink small outline package - a 32-pin, gull-wing surface-mount package measuring 8 mm × 13.4 mm with 0.5 mm lead pitch. It offers lower profile and improved thermal performance versus standard TSOP, and is JEDEC MO-153 compliant. The R1LV0208BSA-5SI#S0 uses this package for high-density PCB layouts in portable equipment.
How does chip select logic work in R1LV0208BSA-5SI#S0?
The R1LV0208BSA-5SI#S0 uses dual chip select signals: CS1# (active low) and CS2 (active high). The device is enabled only when CS1# = L and CS2 = H. If CS1# = H or CS2 = L, the device enters standby mode with DQ in high-impedance state. This dual-signal scheme allows flexible memory banking and eliminates false-enable risks from noise on a single select line.
R1LV0208BSA-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
R1LV0208BSA-5SI#S0 FAQ
1.How can I place an order for R1LV0208BSA-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0208BSA-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0208BSA-5SI#S0 reliable?
The price and inventory of R1LV0208BSA-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0208BSA-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0208BSA-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0208BSA-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0208BSA-5SI#S0?
R1LV0208BSA-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0208BSA-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0208BSA-5SI#S0?
For technical support, including R1LV0208BSA-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0208BSA-5SI#S0 requirements.
6.How does Aetrix verify that R1LV0208BSA-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0208BSA-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0208BSA-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0208BSA-5SI#S0?
All R1LV0208BSA-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0208BSA-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0208BSA-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0208BSA-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0208BSA-5SI#S0 Tags
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