Renesas R1LV0208BSA-5SI#S1

Overview

R1LV0208BSA-5SI#S1 from Renesas Electronics is a 2Mb low-power static RAM organized as 262,144 × 8-bit, fabricated in 0.15 µm CMOS/TFT technology, operating from a single 2.7–3.6 V supply with 55 ns access time and 1 µA typical standby current at 3.0 V, used in battery-backed memory systems requiring no refresh and TTL-compatible interfacing.

For engineers reviewing the R1LV0208BSA-5SI#S1 datasheet, R1LV0208BSA-5SI#S1 pinout, R1LV0208BSA-5SI#S1 application, or R1LV0208BSA-5SI#S1 equivalent, key selection criteria include sTSOP-32 package compatibility, dual chip select architecture (CS1#/CS2), data retention down to 2.0 V, and OR-tie capable three-state outputs for bus sharing.

Technical Context

The R1LV0208BSA-5SI#S1 implements a fully static memory array with no internal clocks or refresh circuitry, relying on asynchronous address decoding and edge-triggered write control via WE#. Its dual chip select (CS1# active-low, CS2 active-high) enables flexible memory expansion and bank selection without external logic.

It supports true read/write random access with separate OE#-controlled output enable and WE#-controlled write strobe, delivering tAA = 55 ns address access time and tOE = 30 ns output enable delay under industrial temperature range (−40°C to +85°C) and 2.7–3.6 V supply.

Key Specifications

Pinout & Package

Package: 32-pin plastic sTSOP (8 mm × 13.4 mm), RoHS-compliant, surface-mount, JEDEC standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV0208BSA-5SI#S1 offers unique sTSOP-32 mechanical compatibility, lowest standby current (1 µA), and dual-voltage data retention (2.0–3.6 V), making it optimal for space-constrained, battery-sensitive industrial and automotive memory buffers.

Availability

R1LV0208BSA-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics event logging requiring stable component supply across extended product lifecycles.

Supply support for R1LV0208BSA-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0208BSA series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications where zero-refresh operation, wide supply tolerance, and industrial temperature reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the R1LV0208BSA-5SI#S1?

The R1LV0208BSA-5SI#S1 does not operate on a clock signal - it is an asynchronous static RAM. Its performance is defined by access timing parameters, not frequency. With a 55 ns access time (tAA), it supports effective burst read/write rates up to approximately 18.2 MHz in ideal conditions, but actual throughput depends on system-level bus protocol and controller timing margins. The R1LV0208BSA-5SI#S1 requires no clock input or synchronization logic.

Does the R1LV0208BSA-5SI#S1 support battery backup operation?

Yes, the R1LV0208BSA-5SI#S1 supports true battery backup operation. It retains data down to VCC = 2.0 V and draws only 1 µA typical standby current at 3.0 V/25°C. When CS2 is held low (≤0.2 V) or CS1# is held high (≥VCC−0.2 V), the device enters data retention mode with ICCDR ≤10 µA at +85°C, enabling years of operation on coin-cell batteries in applications like RTC memory and configuration storage.

What is the difference between CS1# and CS2 in the R1LV0208BSA-5SI#S1?

In the R1LV0208BSA-5SI#S1, CS1# is an active-low chip select and CS2 is an active-high chip select. Both must be asserted simultaneously (CS1# = L, CS2 = H) for normal read/write operations. CS2 also controls internal buffer enable and determines data retention mode: low CS2 selects CS2-controlled retention, while high CS2 with high CS1# enables CS1#-controlled retention. This dual-select architecture simplifies memory banking and reduces external decoding logic.

Is the R1LV0208BSA-5SI#S1 pin-compatible with other 32-pin SRAMs?

The R1LV0208BSA-5SI#S1 uses a standard 32-pin sTSOP footprint (8 mm × 13.4 mm) with JEDEC-defined pinout, but pin compatibility is not guaranteed with other manufacturers' SRAMs due to differences in signal assignment (e.g., some use CE#/OE#/WE# in alternate order). While mechanical fit may be identical, electrical behavior and timing differ - always verify signal mapping and AC characteristics before substitution. The R1LV0208BSA-5SI#S1 pinout is documented in Renesas datasheet R10DS0272EJ0101.

What are the recommended decoupling practices for the R1LV0208BSA-5SI#S1?

Place a 0.1 µF ceramic capacitor between Vcc and Vss as close as possible to the R1LV0208BSA-5SI#S1 pins, ideally within 5 mm. For systems with high switching noise or long PCB traces, add a bulk 4.7 µF tantalum or polymer capacitor near the power entry point. Ensure low-inductance ground routing and avoid splitting the ground plane beneath the sTSOP footprint. These practices stabilize the 2.7–3.6 V supply during fast transitions and prevent read/write corruption in the R1LV0208BSA-5SI#S1.